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    • 3. 发明申请
    • MANUFACTURING METHOD OF MEMS DEVICE, AND SUBSTRATE USED THEREFOR
    • MEMS器件的制造方法及其使用的衬底
    • US20130022790A1
    • 2013-01-24
    • US13609703
    • 2012-09-11
    • Hiroaki InoueTadashi NakataniSatoshi Ueda
    • Hiroaki InoueTadashi NakataniSatoshi Ueda
    • B32B3/30
    • H01H59/0009Y10T428/24521Y10T428/24562
    • A method for manufacturing a MEMS device, includes: preparing a substrate provided with a first substrate in which a cavity is formed, and a second substrate that is bonded to a side of the first substrate and includes a slit to delimit a movable portion in a position corresponding to the cavity, the second substrate, including a first surface thereof facing the first substrate, being provided with a thermally-oxidized film selectively formed on the first surface in a position corresponding to the movable portion; forming a first electrode layer on a second surface opposite to the first surface; forming a sacrifice lager on the first electrode layer and the second substrate; forming a second electrode layer on the sacrifice layer; and removing the sacrifice layer and the thermally-oxidized film after the second electrode layer is formed.
    • 一种MEMS器件的制造方法,其特征在于,包括:准备具有形成有空腔的第一基板的基板和与所述第一基板的一侧接合的第二基板,所述第二基板包括用于限定所述第一基板的可动部的狭缝 包括与第一基板相对的第一表面的第二基板设置有在与第一基板相对应的位置上选择性地形成在第一表面上的热氧化膜; 在与所述第一表面相对的第二表面上形成第一电极层; 在所述第一电极层和所述第二基板上形成牺牲物; 在牺牲层上形成第二电极层; 并且在形成第二电极层之后去除牺牲层和热氧化膜。
    • 4. 发明授权
    • Manufacturing method of MEMS device, and substrate used therefor
    • MEMS器件的制造方法及其使用的衬底
    • US08293557B2
    • 2012-10-23
    • US13012104
    • 2011-01-24
    • Hiroaki InoueTadashi NakataniSatoshi Ueda
    • Hiroaki InoueTadashi NakataniSatoshi Ueda
    • H01L21/00
    • H01H59/0009Y10T428/24521Y10T428/24562
    • A method for manufacturing a MEMS device, includes: preparing a substrate provided with a first substrate in which a cavity is formed, and a second substrate that is bonded to a side of the first substrate on which the cavity is formed and includes a slit to delimit a movable portion in a position corresponding to the cavity, the second substrate, including a first surface thereof facing the first substrate, being provided with a thermally-oxidized film selectively formed on the first surface in a position corresponding to the movable portion; forming a first electrode layer on a second surface opposite to the first surface on which the thermally-oxidized film for the movable portion is formed; forming a sacrifice layer on the first electrode layer and the second substrate; forming a second electrode layer on the sacrifice layer; and removing the sacrifice layer and the thermally-oxidized film after the second electrode layer is formed.
    • 一种MEMS器件的制造方法,包括:准备具有形成有空腔的第一基板的基板和与形成有所述空腔的所述第一基板的一侧接合的第二基板,所述第二基板具有狭缝, 在与空腔相对应的位置限定可移动部分,所述第二基板包括其面向所述第一基板的第一表面,所述第二基板具有在对应于所述可动部分的位置中选择性地形成在所述第一表面上的热氧化膜; 在形成有用于可动部分的热氧化膜的第一表面相对的第二表面上形成第一电极层; 在所述第一电极层和所述第二基板上形成牺牲层; 在牺牲层上形成第二电极层; 并且在形成第二电极层之后去除牺牲层和热氧化膜。
    • 8. 发明授权
    • Computation device and computation execution method
    • 计算设备和计算执行方法
    • US09032421B2
    • 2015-05-12
    • US13985788
    • 2011-10-21
    • Hiroaki InoueTakashi Takenaka
    • Hiroaki InoueTakashi Takenaka
    • G06F13/00G06F9/54G06F7/00
    • G06F9/542G06F7/00G06F17/30985
    • A computation device includes a data path element (300) including a function processing unit (4000) that executes a computation specified in a function using input data included in an event (1000) as an argument; and a control path element (2000) that detects the event (1000) by use of a return value (ret) of the function. The function processing unit (4000) includes a data calculation unit (4001) that executes a computation and outputs a first result (d0); and a control comparison unit (4002) that outputs, to the control path element (2000), a result of comparison between the input data and data for specifying the event (1000), as the return value (ret).
    • 计算装置包括数据路径元素(300),该数据路径元素(300)包括功能处理单元(4000),其使用包括在事件(1000)中的输入数据作为参数来执行在功能中指定的计算; 以及通过使用函数的返回值(ret)来检测事件(1000)的控制路径元素(2000)。 功能处理单元(4000)包括执行计算并输出第一结果(d0)的数据计算单元(4001)。 以及将所述输入数据和用于指定所述事件的数据(1000)的比较结果作为所述返回值(ret)输出到所述控制路径要素(2000)的控制比较部(4002)。