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1. 发明授权

US5726464A Light emitting device using porous semi-conductor material 失效
标题翻译：使用多孔半导体材料的发光器件
公开(公告)号：US5726464A
公开(公告)日：1998-03-10
申请号：US670150
申请日：1996-06-27
申请人： Hideya Kumomi , Takao Yonehara
发明人： Hideya Kumomi , Takao Yonehara
IPC分类号： H01L21/20 , H01L21/76 , H01L33/34 , H01L33/40 , H01L33/42 , H05B33/10 , H05B33/12 , H05B33/22 , H01L33/00
CPC分类号： H01L33/40 , H01L33/346
摘要： A light emitting device comprises a luminous region comprising a luminous porous material comprising a crystalline semiconductor, and a non-porous region adjacent to the luminous region, wherein a conductive type between the regions is different at an interface between the luminous region and the non-porous region, and the crystal structure between the regions is continuous.
摘要翻译：发光器件包括包含结晶半导体的发光多孔材料和与发光区域相邻的无孔区域的发光区域，其中在发光区域和非发光区域之间的界面处，区域之间的导电类型不同，多孔区域，区域之间的晶体结构是连续的。

2. 发明授权

US5970361A Process for producing semiconductor device having porous regions 失效
标题翻译：具有多孔区域的半导体器件的制造方法
公开(公告)号：US5970361A
公开(公告)日：1999-10-19
申请号：US846501
申请日：1997-04-28
申请人： Hideya Kumomi , Takao Yonehara , Nobuhiko Sato
发明人： Hideya Kumomi , Takao Yonehara , Nobuhiko Sato
IPC分类号： H01L21/02 , G01N27/00 , H01L21/306 , H01L27/12 , H01L33/06 , H01L33/08 , H01L33/12 , H01L33/30 , H01L33/34 , H01L33/42 , H01L21/76
CPC分类号： H01L33/346 , G01N27/12 , H01L21/306 , Y10S438/96
摘要： Disclosed are a semiconductor device having a porous member as an active region, the porous member comprising a plurality of porous regions having different structures or compositions; and a process for producing a semiconductor device, comprising a step of modifying partially a non-porous substrate, and a subsequent step of making the substrate porous.
摘要翻译：公开了一种具有多孔构件作为活性区域的半导体器件，多孔构件包括具有不同结构或组成的多个多孔区域; 以及制造半导体器件的方法，包括部分地修饰无孔基底的步骤，以及使基底多孔的后续步骤。

3. 发明授权

US5290712A Process for forming crystalline semiconductor film 失效
标题翻译：形成晶体半导体膜的工艺
公开(公告)号：US5290712A
公开(公告)日：1994-03-01
申请号：US790083
申请日：1991-11-13
申请人： Nobuhiko Sato , Takao Yonehara , Hideya Kumomi
发明人： Nobuhiko Sato , Takao Yonehara , Hideya Kumomi
IPC分类号： H01L21/20
CPC分类号： H01L21/2022
摘要： A process for forming a crystalline semiconductor film by crystallization through solid phase growth of an amorphous semiconductor film on a base material comprises implanting ions of an element constituting the amorphous semiconductor film into the amorphous semiconductor film except a fine region therein, then heat-treating the amorphous semiconductor film at a temperature not higher than the melting point of the amorphous semiconductor film, thereby generating a crystal nucleus in the fine region, and making a crystal grow at the crystal nucleus as growth point.
摘要翻译：通过在基材上的非晶半导体膜的固相生长结晶化而形成结晶半导体膜的方法包括将构成非晶半导体膜的元素的离子注入除了其中的微细区域之外的非晶半导体膜中，然后热处理非晶半导体膜的温度不高于非晶半导体膜的熔点，从而在微细区域中产生晶核，并使晶体在晶核上生长为生长点。

4. 发明授权

US5723348A Method of making a light-emitting device 失效
标题翻译：制造发光装置的方法
公开(公告)号：US5723348A
公开(公告)日：1998-03-03
申请号：US598623
申请日：1996-02-12
申请人： Hideya Kumomi , Takao Yonehara
发明人： Hideya Kumomi , Takao Yonehara
IPC分类号： H01L27/15 , H01L33/34 , H01L21/265 , H01L21/00 , H01L21/203 , H01L21/205
CPC分类号： H01L33/343 , H01L27/15 , Y10S148/077
摘要： A light-emitting device, in which a film obtained by ion-implanting ions that can become a semiconductor material into an oxide film forms at least a part of a light-emitting layer.
摘要翻译：通过将可以成为半导体材料的离子离子注入氧化膜而获得的膜形成至少一部分发光层的发光器件。

5. 发明申请

US20110256654A1 DOUBLE-SIDED REUSABLE TEMPLATE FOR FABRICATION OF SEMICONDUCTOR SUBSTRATES FOR PHOTOVOLTAIC CELL AND MICROELECTRONICS DEVICE MANUFACTURING 有权
标题翻译：用于制造用于光电晶体和微电子器件制造的半导体衬底的双面可重复模板
公开(公告)号：US20110256654A1
公开(公告)日：2011-10-20
申请号：US13026239
申请日：2011-02-12
申请人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D Kamian , Jay Ashjaee , Takao Yonehara
发明人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D Kamian , Jay Ashjaee , Takao Yonehara
IPC分类号： H01L21/20 , C23C16/00 , C25D21/12 , H01L31/18
CPC分类号： H01L21/20 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.
摘要翻译：本公开提供了从可再使用的半导体模板的两侧制造TFSS的制造方法和装置设计，从而有效地增加了基板制造的吞吐量并降低了基板的制造成本。对于给定数量的模板重用周期，这种方法还将每个制造的衬底（TFSS）的平均起始模板成本降低约2倍。

6. 发明授权

US07943488B2 Transfer method of functional region, LED array, LED printer head, and LED printer 有权
标题翻译：功能区转移方式，LED阵列，LED打印头，LED打印机
公开(公告)号：US07943488B2
公开(公告)日：2011-05-17
申请号：US12611761
申请日：2009-11-03
申请人： Takao Yonehara
发明人： Takao Yonehara
IPC分类号： H01L21/52 , H01L21/00
CPC分类号： H01L27/153 , B41J2/45 , H01L33/0079
摘要： A method includes placing a first bonding layer on at least one of a first functional region bonded on a release layer with a light releasable adhesive layer on a first substrate, and a transfer region on a second substrate; bonding the first functional region to the second substrate by the first bonding layer; irradiating the release layer with light with a light blocking member being provided to separate the first substrate from the first functional region at the release layer; placing a second bonding layer on at least one of a second functional region on the first substrate, and a transfer region on the release layer or a transfer region on a third substrate; bonding the second functional region to the second substrate or the third substrate by the second bonding layer; and separating the first substrate from the second functional region at the release layer.
摘要翻译：一种方法包括将第一结合层放置在第一基板上的第一功能区域和第二基板上的转印区域上，所述第一功能区域与剥离层上的第一功能区域和第一基板上的可光剥离的粘合剂层接合; 通过第一接合层将第一功能区域接合到第二基板; 用提供遮光部件的光照射剥离层，以在剥离层处将第一基板与第一功能区域分离; 在第一基板上的第二功能区域和剥离层上的转印区域或第三基板上的转印区域中的至少一个上放置第二粘合层; 通过第二接合层将第二功能区域接合到第二基板或第三基板; 以及在所述释放层处将所述第一基底与所述第二功能区分离。

7. 发明授权

US07829362B2 Field-effect transistor, sensor using it, and production method thereof 有权
标题翻译：场效应晶体管，使用它的传感器及其制造方法
公开(公告)号：US07829362B2
公开(公告)日：2010-11-09
申请号：US11945838
申请日：2007-11-27
申请人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Yohei Ishida , Tohru Den
发明人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Yohei Ishida , Tohru Den
IPC分类号： H01L21/336
CPC分类号： G01N27/4146 , Y10S438/96 , Y10T436/11 , Y10T436/114165
摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要翻译：通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜氧化物，其具有垂直于衬底的孔。

8. 发明申请

US20100159678A1 GERMANIUM SUBSTRATE-TYPE MATERIALS AND APPROACH THEREFOR 有权
标题翻译：锗基材料及其方法
公开(公告)号：US20100159678A1
公开(公告)日：2010-06-24
申请号：US12719796
申请日：2010-03-08
申请人： Ammar Munir Nayfeh , Chi On Chui , Krishna C. Saraswat , Takao Yonehara
发明人： Ammar Munir Nayfeh , Chi On Chui , Krishna C. Saraswat , Takao Yonehara
IPC分类号： H01L21/20
CPC分类号： H01L29/518 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/02587 , H01L21/0262 , H01L21/2807 , H01L21/28255 , H01L29/16 , H01L29/165 , H01L29/513 , H01L29/66575 , H01L29/94
摘要： Germanium circuit-type structures are facilitated. In one example embodiment, a multi-step growth and anneal process is implemented to grow Germanium (Ge) containing material, such as heteroepitaxial-Germanium, on a substrate including Silicon (Si) or Silicon-containing material. In certain applications, defects are generally confined near a Silicon/Germanium interface, with defect threading to an upper surface of the Germanium containing material generally being inhibited. These approaches are applicable to a variety of devices including Germanium MOS capacitors, pMOSFETs and optoelectronic devices.
摘要翻译：锗电路型结构方便。在一个示例实施例中，实施多步生长和退火工艺以在包括硅（Si）或含硅材料的衬底上生长含锗（Ge）的材料，例如异质外延锗。在某些应用中，缺陷通常被限制在硅/锗界面附近，通常阻止含锗材料的上表面的缺陷穿线。这些方法适用于包括锗MOS电容器，pMOSFET和光电器件在内的各种器件。

9. 发明申请

US20080076201A1 FIELD-EFFECT TRANSISTOR, SENSOR USING IT, AND PRODUCTION METHOD THEREOF 有权
标题翻译：现场效应晶体管，使用它的传感器及其生产方法
公开(公告)号：US20080076201A1
公开(公告)日：2008-03-27
申请号：US11945838
申请日：2007-11-27
申请人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Youhei Ishida , Tohru Den
发明人： Kazuhiko Fukutani , Takao Yonehara , Hirokatsu Miyata , Youhei Ishida , Tohru Den
IPC分类号： H01L21/00
CPC分类号： G01N27/4146 , Y10S438/96 , Y10T436/11 , Y10T436/114165
摘要： A sensor which has high measuring sensitivity and is excellent in response is provided by forming a porous film in a sensitive section of a field-effect transistor. It comprises a porous body, which is formed on a sensitive section (here, a gate insulating film) of the field-effect transistor and has cylindrical pores which are formed almost perpendicularly to a substrate, and the field-effect transistor. It uses as a porous film a porous film which is made of a semiconductor material whose main component (except oxygen) is silicon, germanium, or a composite of silicon and germanium, or a porous film made of an insulation material whose main component is silicon oxide, which has pores perpendicular to the substrate.
摘要翻译：通过在场效应晶体管的敏感部分中形成多孔膜来提供具有高测量灵敏度和响应性优异的传感器。它包括形成在场效应晶体管的敏感部分（这里是栅极绝缘膜）上并具有几乎垂直于基板形成的圆柱形孔的多孔体和场效应晶体管。作为多孔膜，使用由主要成分（氧除外）为硅，锗或硅与锗的复合体的半导体材料制成的多孔膜，或由主要成分为硅的绝缘材料构成的多孔膜氧化物，其具有垂直于衬底的孔。

10. 发明申请

US20070285666A1 Device and Method for Acquiring Information on Objective Substance to Be Detected By Detecting a Change of Wavelength Characteristics on the Optical Transmittance 失效
标题翻译：通过检测光学透射率波长特性变化来获得要检测的物质信息的装置和方法
公开(公告)号：US20070285666A1
公开(公告)日：2007-12-13
申请号：US11659717
申请日：2005-09-14
申请人： Norihiko Utsunomiya , Mitsuro Sugita , Satoru Nishiuma , Takao Yonehara
发明人： Norihiko Utsunomiya , Mitsuro Sugita , Satoru Nishiuma , Takao Yonehara
IPC分类号： G01N21/00
CPC分类号： G01N21/554 , G01N21/648 , G01N2021/258 , G01N2201/0635 , G01N2201/0636
摘要： An information-acquiring device for acquiring information on an objective substance to be detected, which is provided with a sensing element that has a surface capable of fixing the objective substance to be detected thereon, and makes applied light change its wavelength characteristics in response to the fixed state of the objective substance to be detected onto the surface, a light source, and light-receiving means for receiving light emitted from the light source through the sensing element, has the light-receiving means and the light source arranged on the same substrate so that the light which has been emitted from the light source and has been transmitted through the sensing element can be led to the light-receiving means, and has means for varying the wavelength regions of each light incident on each of a plurality of the light-receiving means installed in an optical path from the light source to the light-receiving means.
摘要翻译：一种信息获取装置，用于获取关于待检测的物质的信息，该信息获取装置设置有具有能够固定待检测的物体的表面的感测元件，并且使得施加的光响应于该检测元件的波长特性而改变其要检测的目标物质的固定状态，光源和用于接收通过感测元件从光源发射的光的光接收装置，其中光接收装置和光源布置在同一基板上使得已经从光源发射并已经透射通过感测元件的光可以被引导到光接收装置，并且具有用于改变入射到多个光中的每一个的每个光的波长区域的装置 - 接收装置安装在从光源到光接收装置的光路中。

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