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    • 6. 发明申请
    • HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT
    • 高效多孔半导体制造设备
    • US20110030610A1
    • 2011-02-10
    • US12774667
    • 2010-05-05
    • George D. KamianSomnath NagSubbu TamilmaniMehrdad M. MoslehiKarl-Josef KramerTakao Yonehara
    • George D. KamianSomnath NagSubbu TamilmaniMehrdad M. MoslehiKarl-Josef KramerTakao Yonehara
    • C25F3/12C25F7/00C30B19/08C30B23/06C30B25/10
    • C25D11/32C25D11/005C25D17/001C25D17/06C25F3/12C25F7/00H01L31/1892Y02E10/50
    • This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
    • 本公开使得能够高生产率地制造基于半导体的分离层(由单层或多层多孔半导体(例如多孔硅,包括单孔隙率或多孔度层构成),光反射器(由多层/多孔多孔半导体 孔隙度多孔半导体如多孔硅),用于防反射涂层的多孔半导体(例如多孔硅)的形成,钝化层和多结的多带隙太阳能电池(例如,通过形成可变带隙 晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器)。 其他应用包括制造用于脱模和MEMS器件制造,膜形成和浅沟槽隔离(STI)多孔硅的MEMS分离和牺牲层(使用具有最佳孔隙率并随后氧化的多孔硅形成)。 此外,本公开可应用于光伏,MEMS(包括传感器和致动器)的独立或集成半导体微电子,半导体微电子芯片和光电子学的一般领域。
    • 7. 发明授权
    • High-productivity porous semiconductor manufacturing equipment
    • 高效多孔半导体制造设备
    • US08999058B2
    • 2015-04-07
    • US12774667
    • 2010-05-05
    • George D. KamianSomnath NagSubbu TamilmaniMehrdad M. MoslehiKarl-Josef KramerTakao Yonehara
    • George D. KamianSomnath NagSubbu TamilmaniMehrdad M. MoslehiKarl-Josef KramerTakao Yonehara
    • C30B1/10C25D11/32H01L31/18C25D17/00C25D17/06C25D11/00
    • C25D11/32C25D11/005C25D17/001C25D17/06C25F3/12C25F7/00H01L31/1892Y02E10/50
    • This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
    • 本公开使得能够高生产率地制造基于半导体的分离层(由单层或多层多孔半导体(例如多孔硅,包括单孔隙率或多孔度层构成),光反射器(由多层/多孔多孔半导体 孔隙度多孔半导体如多孔硅),用于防反射涂层的多孔半导体(例如多孔硅)的形成,钝化层和多结的多带隙太阳能电池(例如,通过形成可变带隙 晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器)。 其他应用包括制造用于脱模和MEMS器件制造,膜形成和浅沟槽隔离(STI)多孔硅的MEMS分离和牺牲层(使用具有最佳孔隙率并随后氧化的多孔硅形成)。 此外,本公开可应用于光伏,MEMS(包括传感器和致动器)的独立或集成半导体微电子,半导体微电子芯片和光电子学的一般领域。