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1. 发明专利

JP2003289924A Fixing apparatus of 'parasol' 审中-公开
标题翻译： “PARASOL”固定装置
公开(公告)号：JP2003289924A
公开(公告)日：2003-10-14
申请号：JP2002137808
申请日：2002-04-04
申请人： Kenichi Hara , 健一原
发明人： HARA KENICHI
IPC分类号： A45B17/00 , A45B25/22
摘要： PROBLEM TO BE SOLVED: To provide a fixing apparatus for fixing a 'parasol' used on the beach is summer which is often flown away on a windy day, etc., to the ground so that the parasol is not flown away.
SOLUTION: The rod (4) of the parasol is put through a metal fitting (1), which is fixed by fastening thumb screws (2). At the lower part of the metal fitting (1), a plastic plate (3) is rotated and fitted. The tip of the rod in the center of the parasol to which the fixing apparatus like this is fitted is buried in sand.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供一种用于固定在沙滩上使用的“遮阳伞”的定影装置，它是经常在大风天等地飞向地面的夏天，使得遮阳伞不会流出。
解决方案：将阳伞的杆（4）穿过金属配件（1），通过紧固翼形螺钉（2）固定。在金属配件（1）的下部，旋转并安装塑料板（3）。在这种固定装置安装的阳伞的中心的杆的尖端被埋在沙子中。版权所有（C）2004，JPO

2. 发明申请

US20130295751A1 THIN FILM FORMING DEVICE FOR SOLAR CELL AND THIN FILM FORMING METHOD 审中-公开
标题翻译：用于太阳能电池和薄膜形成方法的薄膜形成装置
公开(公告)号：US20130295751A1
公开(公告)日：2013-11-07
申请号：US13978942
申请日：2012-01-13
申请人： Takamasa Kato , Masaki Narushima , Kenichi Hara
发明人： Takamasa Kato , Masaki Narushima , Kenichi Hara
IPC分类号： H01L21/02
CPC分类号： H01L21/02617 , C23C24/02 , H01L21/02543 , H01L21/02546 , H01L21/02557 , H01L21/02562 , H01L21/02568 , H01L21/02601 , H01L21/02628 , H01L31/0322 , H01L31/0326 , H01L31/03923 , H01L31/03925 , H01L31/18 , H01L31/1828 , H01L31/20 , Y02E10/541 , Y02E10/543
摘要： This thin film forming method for a solar cell forms a thin film that contains a plurality of elements on the surface of an object to be processed. A raw material solution that contains the elements is dispersed in a processing space and microparticles by an electric field, and the microparticles that are dispersed form a thin film that adheres to the surface of the object to be processed. Thus, a thin film for a solar cell element with preferable crystallinity can be formed even in an atmosphere at atmospheric pressure.
摘要翻译：该太阳能电池薄膜形成方法形成在被处理物的表面上含有多个元素的薄膜。含有这些元素的原料溶液通过电场分散在处理空间和微粒中，并且分散的微粒形成粘附到待处理物体的表面的薄膜。因此，即使在大气压的气氛中也可以形成具有优选结晶性的太阳能电池元件用薄膜。

3. 发明申请

US20130217225A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20130217225A1
公开(公告)日：2013-08-22
申请号：US13819431
申请日：2011-07-29
申请人： Takashi Hayakawa , Kenichi Hara , Takashi Tanaka
发明人： Takashi Hayakawa , Kenichi Hara , Takashi Tanaka
IPC分类号： H01L21/306
CPC分类号： H01L21/30604 , H01L21/288 , H01L21/31053 , H01L21/32134 , H01L21/32135 , H01L21/32136 , H01L21/32139 , H01L21/7682 , H01L21/76852 , H01L21/76885 , H01L21/76897 , H01L23/5222 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A method comprising the steps of: forming a copper film (101) on a Cu barrier film (100); forming a mask material (102) on the copper film (101); anisotropically etching the copper film (101) until the Cu barrier film (100) is exposed, using the mask material (102) as a mask; and removing the mask material (102) and subsequently forming a plating film (104) that contains a substance for suppressing copper diffusion on the anisotropically etched copper film (101), using an electroless plating method that utilizes a selective deposition in which catalytic action occurs with respect to the copper film (101) but not the Cu barrier film (100).
摘要翻译：一种方法，包括以下步骤：在Cu阻挡膜（100）上形成铜膜（101）; 在所述铜膜（101）上形成掩模材料（102）; 使用掩模材料（102）作为掩模，各向异性地蚀刻铜膜（101）直到Cu阻挡膜（100）露出; 并且使用利用选择性沉积的化学镀方法，除去掩模材料（102）并随后在各向异性蚀刻的铜膜（101）上形成含有抑制铜扩散的物质的镀膜（104）相对于铜膜（101）而不是铜阻挡膜（100）。

4. 发明申请

US20130203260A1 ETCHING METHOD AND ETCHING APPARATUS 审中-公开
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US20130203260A1
公开(公告)日：2013-08-08
申请号：US13819382
申请日：2011-07-29
申请人： Kenichi Hara , Takashi Hayakawa
发明人： Kenichi Hara , Takashi Hayakawa
IPC分类号： H01L21/768 , H01L21/67
CPC分类号： H01L21/76886 , C23F4/00 , H01J37/3053 , H01J2237/0817 , H01J2237/334 , H01L21/32136 , H01L21/67069 , H01L23/53228 , H01L2924/0002 , H01L2924/00
摘要： This etching method comprises a step for forming an organic compound gas (22) atmosphere around a copper film (101) that has a mask material (102) formed on the surface thereof and a step for using the mask material (102) as a mask on the copper film (101), irradiating with oxygen ions (6), and performing anisotropic etching of the copper film (101) in the organic compound gas (22) atmosphere.
摘要翻译：该蚀刻方法包括在其表面形成有掩模材料（102）的铜膜（101）周围形成有机化合物气体（22）气氛的步骤和使用掩模材料（102）作为掩模的步骤在铜膜（101）上照射氧离子（6），并对有机化合物气体（22）气氛中的铜膜（101）进行各向异性蚀刻。

5. 发明申请

US20080226826A1 Substrate Processing Method and Substrate Processing Apparatus 审中-公开
标题翻译：基板加工方法及基板加工装置
公开(公告)号：US20080226826A1
公开(公告)日：2008-09-18
申请号：US12091197
申请日：2007-06-22
申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
发明人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
IPC分类号： B05D3/10 , B05C11/08
CPC分类号： H01L21/76849 , C23C18/1689 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/67051 , H01L21/6723 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line.
摘要翻译：基板处理方法包括将CoWB的无电镀施加到形成在晶片W上的Cu互连线上，然后在副产物沉淀在靶基板或晶片上之后，通过使用目标基板或晶片上的清洗液进行后清洗处理通过无电镀形成的CoWB膜的表面覆盖Cu互连线。

6. 发明授权

US4320378A Oxygen sensor 失效
标题翻译：氧传感器
公开(公告)号：US4320378A
公开(公告)日：1982-03-16
申请号：US194248
申请日：1980-03-18
申请人： Harutaka Taniguchi , Kenichi Hara , Hideo Shiraishi , Shinji Kiyofuji
发明人： Harutaka Taniguchi , Kenichi Hara , Hideo Shiraishi , Shinji Kiyofuji
IPC分类号： G01N27/12 , G01N27/403 , G01N27/407 , H01L7/00
CPC分类号： G01N27/4071 , G01N27/4077
摘要： Into a metal tube (24) provided with vent-holes (32) is inserted an oxygen sensor element (10) which comprises a ceramic round rod coated with a porous thick membrane of transition-metal oxide, divided electrode thick membranes (14) and a protective layer therefor, thereby to obtain an oxygen sensor. One electrode of the oxygen sensor element is connected to the metal tube and the opposite electrode is connected to a connecting lead wire (64, 66) electrically insulated from the tube, so that the oxygen sensor is rich in toughness against the mechanical oscillation and impact. The sensor may suitably be used to detect the oxygen content in the waste gas of automobiles.
摘要翻译：在设置有通气孔（32）的金属管（24）中插入氧传感器元件（10），该氧传感器元件（10）包括涂覆有过渡金属氧化物的多孔厚膜的陶瓷圆棒，分隔电极厚膜（14）和其保护层，从而获得氧传感器。氧传感器元件的一个电极连接到金属管，并且相对电极连接到与管电绝缘的连接引线（64,66），使得氧传感器具有相对于机械振荡和冲击的韧性。传感器可适当地用于检测汽车废气中的氧气含量。

7. 发明申请

US20110318925A1 SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS 审中-公开
标题翻译：基板加工方法和基板加工装置
公开(公告)号：US20110318925A1
公开(公告)日：2011-12-29
申请号：US13227012
申请日：2011-09-07
申请人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
发明人： Takashi Tanaka , Kenichi Hara , Mitsuaki Iwashita
IPC分类号： H01L21/28
CPC分类号： H01L21/76849 , C23C18/1689 , C23C18/1834 , C23C18/50 , H01L21/288 , H01L21/67051 , H01L21/6723 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A substrate processing method includes applying electroless plating of CoWB onto a Cu interconnection line formed on a wafer W, and then performing a post-cleaning process by use of a cleaning liquid on the target substrate or wafer before a by-product is precipitated on the surface of the CoWB film formed by the electroless plating to cover the Cu interconnection line.
摘要翻译：基板处理方法包括将CoWB的无电镀施加到形成在晶片W上的Cu互连线上，然后在副产物沉淀在目标基板或晶片上之后，通过使用目标基板或晶片上的清洗液进行后清洗处理通过无电镀形成的CoWB膜的表面覆盖Cu互连线。

8. 发明申请

US20110265718A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD 有权
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：US20110265718A1
公开(公告)日：2011-11-03
申请号：US13180702
申请日：2011-07-12
申请人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
发明人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
IPC分类号： B05B13/04 , H01L21/00 , B05C11/10
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译：在基板的表面上形成具有均匀膜厚的镀膜。半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

9. 发明申请

US20090253258A1 SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD 有权
标题翻译：半导体制造设备和半导体制造方法
公开(公告)号：US20090253258A1
公开(公告)日：2009-10-08
申请号：US12405644
申请日：2009-03-17
申请人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
发明人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
IPC分类号： H01L21/283 , B05B13/02
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译：在基板的表面上形成具有均匀膜厚的镀膜。半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

10. 发明申请

US20070134431A1 Electroless plating apparatus and electroless plating method 审中-公开
标题翻译：无电镀设备和化学镀方法
公开(公告)号：US20070134431A1
公开(公告)日：2007-06-14
申请号：US11606930
申请日：2006-12-01
申请人： Kenichi Hara , Takayuki Toshima , Mitsuaki Iwashita , Takehiko Orii
发明人： Kenichi Hara , Takayuki Toshima , Mitsuaki Iwashita , Takehiko Orii
IPC分类号： B05D5/12 , B05D1/18 , B05C5/00
CPC分类号： H01L21/68728 , C23C18/1619 , C23C18/1628 , H01L21/6715 , H01L21/6723
摘要： An electroless plating apparatus performs electroless plating on a wiring portion with a plating solution using a reducer having low reduction power. The electroless plating apparatus includes a support member with a conductive portion, which supports a substrate; a plating-solution feeding mechanism which feeds the plating solution to a top surface of the substrate supported by the support member; a metal member which is provided at the support member in such a way as to be contactable to the plating solution and dissolves into the plating solution when in contact therewith to thereby generate electrons; and an electron supply passage which supplies the electrons generated by the dissolved metal member to the wiring portion on the substrate via the conductive portion of the support member.
摘要翻译：无电解电镀装置使用具有低还原能力的还原剂在具有电镀液的布线部分上进行无电镀。无电解电镀装置包括：支撑构件，其具有导电部分，其支撑基板; 电镀液供给机构，其将所述电镀液供给到由所述支撑部件支撑的所述基板的上表面; 金属构件，其设置在所述支撑构件上，以便能够与所述电镀液接触，并且在与所述电镀液接触时溶解到所述电镀液中，从而产生电子; 以及电子供给路径，其经由所述溶解金属构件产生的电子经由所述支撑构件的导电部向所述基板上的配线部供给。

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