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1. 发明授权

US4777543A Tracking correction for a rotary head by detection of the minimum signal level 失效
标题翻译：通过检测最小信号电平对旋转磁头进行跟踪校正
公开(公告)号：US4777543A
公开(公告)日：1988-10-11
申请号：US898539
申请日：1986-08-21
申请人： Hideo Nishijima , Kaneyuki Okamoto , Katsuhiko Goto , Hiroshi Usami
发明人： Hideo Nishijima , Kaneyuki Okamoto , Katsuhiko Goto , Hiroshi Usami
IPC分类号： G11B15/467 , H04N5/7826 , G11B5/588 , G11B15/473
CPC分类号： G11B15/4675
摘要： In an automatic tracking system for a magnetic recording and reproducing apparatus wherein tracking is controlled so as to increase an amplitude of a reproduced signal which is delivered from a rotary head for reproducing a track recorded by a helical scan system, the amplitudes of the reproduced signal are detected at a plurality of points of time within one rotational cycle of the rotary head, and the tracking is controlled so as to increase a minimum value among the detected values at the plurality of points of time.
摘要翻译：在用于磁记录和再现装置的自动跟踪系统中，其中跟踪被控制以增加从用于再现由螺旋扫描系统记录的轨迹的旋转磁头传送的再现信号的幅度，再现信号的幅度在旋转头的一个旋转周期内的多个时间点被检测，并且跟踪被控制以便在多个时间点上增加检测值中的最小值。

2. 发明授权

US4613914A Auto-tracking method and apparatus of a magnetic recording/reproducing apparatus 失效
标题翻译：磁记录/重放装置的自动跟踪方法和装置
公开(公告)号：US4613914A
公开(公告)日：1986-09-23
申请号：US754908
申请日：1985-07-15
申请人： Yasunori Kobori , Hideo Nishijima , Kaneyuki Okamoto , Isao Fukushima , Katsuhiko Goto , Takashi Takahashi
发明人： Yasunori Kobori , Hideo Nishijima , Kaneyuki Okamoto , Isao Fukushima , Katsuhiko Goto , Takashi Takahashi
IPC分类号： G11B5/588 , G11B15/467 , G11B5/008
CPC分类号： G11B15/4676
摘要： An auto-tracking method and apparatus of a helical scan type magnetic recording/reproducing apparatus wherein envelope levels of reproduced signals are detected and the running phase of a magnetic tape is controlled so that the envelope level of the reproduced signal becomes maximum after detection is effected roughly and then finely, thereby allowing a video head to scan a track on the magnetic tape.
摘要翻译：一种螺旋扫描型磁记录/再现装置的自动跟踪方法和装置，其中检测到再现信号的包络电平，并且控制磁带的运行相位，使得再现信号的包络电平在检测到之后变为最大值大致然后精细，从而允许视频头扫描磁带上的轨道。

3. 发明授权

US5909523A Optical module and method of fabricating optical module 失效
标题翻译：光模块及其制造方法
公开(公告)号：US5909523A
公开(公告)日：1999-06-01
申请号：US816934
申请日：1997-03-14
申请人： Go Sakaino , Katsuhiko Goto , Toshitaka Aoyagi
发明人： Go Sakaino , Katsuhiko Goto , Toshitaka Aoyagi
IPC分类号： G02B6/42 , G02B6/30
CPC分类号： G02B6/4207 , G02B6/42 , G02B6/4204 , G02B6/4224 , H01L2224/48091
摘要： An optical module includes a substrate having an upper surface and a groove on the upper surface; an optical fiber having a core and an end facet, disposed in the groove of the substrate; an optical semiconductor device having an upper surface and a light interactive area on the upper surface optically coupled to the optical fiber; and a block having a side surface on which the optical semiconductor device is fixed and a lower surface perpendicular to the side surface. The optical semiconductor device is fixed onto the side surface of the block so that the distance from the light interactive area to the lower surface of the block is equal to the distance from the core of the optical fiber to the upper surface of the substrate; and the block is disposed on the substrate, with the lower surface contacting the upper surface of the substrate, so that the light interactive area is opposed to the end facet of the optical fiber. The core of the optical fiber and the light interactive area are accurately aligned with the surface of the substrate as a reference regardless of the thickness of the substrate, resulting in a high coupling efficiency between the optical fiber and the optical semiconductor device.
摘要翻译：光学模块包括在上表面上具有上表面和凹槽的基板; 具有芯和端面的光纤，设置在基板的槽中; 光学半导体器件，具有光学耦合到光纤的上表面上的上表面和光交互区域; 以及具有固定光半导体器件的侧表面和垂直于侧表面的下表面的块。光学半导体器件被固定在块的侧表面上，使得从光交互区域到块的下表面的距离等于从光纤的芯到衬底的上表面的距离; 并且所述块设置在所述基板上，所述下表面接触所述基板的上表面，使得所述光交互区域与所述光纤的端面相对。无论基板的厚度如何，光纤和光交互区域的核心与基板的表面精确对准，作为基准，导致光纤和光学半导体器件之间的高耦合效率。

4. 发明授权

US5124279A Integrated semiconductor laser producing light of different wavelengths at respective active regions 失效
标题翻译：集成半导体激光器在相关活动区域生成不同波长的光
公开(公告)号：US5124279A
公开(公告)日：1992-06-23
申请号：US607738
申请日：1990-11-01
申请人： Katsuhiko Goto
发明人： Katsuhiko Goto
IPC分类号： H01S5/00 , H01S5/40
CPC分类号： H01S5/4031 , H01S5/4087 , Y10S148/095 , Y10S438/902
摘要： A method of making an integrated semiconductor laser on a common substrate including at least two active regions, each active region oscillating at a respective, different wavelength, including producing a precursor laser structure by successively growing on a semiconductor substrate a first conductivity type semiconductor first cladding layer, an active layer including at least one compound semiconductor quantum well layer sandwiched between compound semiconductor quantum barrier layers, and a second conductivity type semiconductor second cladding layer, the quantum barrier layers having a larger energy band gap than and including at least one more element than the quantum well layer, annealing the precursor structure including controlling at first and second spaced apart regions the diffusion of the at least one more element from the quantum barrier layers into the quantum well layer to produce first and second spaced apart active regions in the active layer having different effective lasing energy band gaps, and forming respective electrical contacts to the first and second cladding layers on opposite sides of each of the first and second active regions.
摘要翻译：一种在共同的衬底上制造集成半导体激光器的方法，该公共衬底包括至少两个有源区域，每个有源区域以相应的不同波长振荡，包括通过在半导体衬底上依次生长第一导电型半导体第一覆层层，包括夹在化合物半导体量子势垒层和第二导电类型半导体第二包层之间的至少一个化合物半导体量子阱层的有源层，所述量子势垒层具有比包括至少一个以上元素的能带更大的能带隙所述前体结构退火包括在第一和第二间隔开的区域处控制所述至少一个以上元件从所述量子势垒层扩散到所述量子阱层中以在所述活性物质中产生第一和第二间隔开的有源区域层具有不同的效果 e激光能带隙，并且在第一和第二有源区域中的每一个的相对侧上的第一和第二覆层形成相应的电触点。

5. 发明申请

US20070243075A1 Carrying system and processing equipment 有权
标题翻译：搬运系统及加工设备
公开(公告)号：US20070243075A1
公开(公告)日：2007-10-18
申请号：US11783562
申请日：2007-04-10
申请人： Akio Hirose , Katsuhiko Goto
发明人： Akio Hirose , Katsuhiko Goto
IPC分类号： F04B49/00
CPC分类号： F04B49/08 , B05B13/0221 , B05B13/0242 , B05B13/0431 , B25J9/0096
摘要： A carrying system includes first and second carrying machines each of which includes a holding unit, a base and a linkage having pivotally joined first and second links. The holding unit can be moved, by turning the second link relative to the first link which is turned relative to the base, along a substantially arc carrying route extending round the pedestal between a loading position and a processing position. The arc carrying route is closer to the pedestal with respect to an imaginary circle having its center on the pedestal and a radius corresponding to the distance between the pedestal and either of the loading position and the processing position.
摘要翻译：承载系统包括第一和第二搬运机器，每个承载机器包括保持单元，基座和具有枢转连接的第一和第二连杆的连杆。可以通过相对于相对于基座转动的第一连杆转动第二连杆，沿着在装载位置和处理位置之间的基座延伸的基本上圆弧的运送路线来移动保持单元。电弧携带路径相对于其在基座上的中心的假想圆更靠近基座，并且与基座与装载位置和处理位置中的任一个之间的距离相对应。

6. 发明授权

US5991322A Semiconductor optical device 失效
标题翻译：半导体光学器件
公开(公告)号：US5991322A
公开(公告)日：1999-11-23
申请号：US505761
申请日：1995-07-21
申请人： Tohru Takiguchi , Katsuhiko Goto , Hirotaka Kizuki
发明人： Tohru Takiguchi , Katsuhiko Goto , Hirotaka Kizuki
IPC分类号： H01L33/06 , H01L33/10 , H01L33/14 , H01L33/16 , H01L33/20 , H01L33/30 , H01L33/36 , H01S5/00 , H01S5/026 , H01S5/042 , H01S5/0625 , H01S5/12 , H01S5/20 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/0265 , H01S5/06256 , H01S5/12 , H01S5/1231 , H01S5/2077 , H01S5/2081 , H01S5/2086 , H01S5/2272 , H01S5/2275 , H01S5/3428 , H01S5/34306 , H01S5/34313
摘要： A semiconductor optical device includes a first semiconductor layer, and a diffraction grating disposed on the first semiconductor layer. The diffraction grating includes portions of a superlattice layer grown on the first semiconductor layer and including alternatingly arranged second semiconductor layers of a semiconductor material in which mass transport hardly occurs during growth of other semiconductor layers and third semiconductor layers of a semiconductor material different from the material of the second semiconductor layers. The device includes a fourth semiconductor layer burying the diffraction grating. In this structure, since the second semiconductor layers are included in the diffraction grating, the shape of the diffraction grating is maintained during the vapor phase deposition of the fourth semiconductor layer. Therefore, the thickness, amplitude, and pitch of the diffraction grating that determine the optical coupling constant are controlled with high precision.
摘要翻译：半导体光学器件包括第一半导体层和设置在第一半导体层上的衍射光栅。衍射光栅包括在第一半导体层上生长的超晶格层的部分，并且包括交替布置的半导体材料的第二半导体层，其中在其它半导体层和不同于材料的半导体材料的第三半导体层的生长期间几乎不发生质量传输的第二半导体层。该器件包括埋入衍射光栅的第四半导体层。在这种结构中，由于第二半导体层包括在衍射光栅中，所以在第四半导体层的气相沉积期间维持衍射光栅的形状。因此，确定光耦合常数的衍射光栅的厚度，振幅和间距以高精度被控制。

7. 发明授权

US5684823A Method of fabricating a diffraction grating and a distributed feedback semiconductor laser incorporating the diffraction grating 失效
$Method of fabricating a diffraction grating and a distributed feedback semiconductor laser incorporating the diffraction grating$
标题翻译：制造衍射光栅的方法和结合衍射光栅的分布式反馈半导体激光器
公开(公告)号：US5684823A
公开(公告)日：1997-11-04
申请号：US611579
申请日：1996-03-07
申请人： Katsuhiko Goto , Yutaka Mihashi
发明人： Katsuhiko Goto , Yutaka Mihashi
IPC分类号： H01S5/00 , H01L21/20 , H01S5/12 , H01S5/227 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02494 , H01L21/02543 , H01L21/02546 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01S5/12 , H01S5/1228 , H01S5/341 , H01S5/1225 , H01S5/124 , H01S5/1243 , H01S5/2272 , Y10S438/962
摘要： A quantum wire structure includes a substrate of a first semiconductor having a surface and a first band gap energy; a layer of a second semiconductor having a second band gap energy and including second semiconductor elements disposed on the surface of the substrate spaced apart in a pattern at an interval of no more than 100 nm, each second semiconductor element having a trapezoidal cross-section transverse to the surface of the substrate and including an upper surface generally parallel to the surface of the semiconductor substrate and sloped surfaces oriented so that a third semiconductor does not grow on the sloped surfaces; a layer of a third semiconductor having a third band gap energy smaller than the first and second band gap energies disposed on the upper surfaces of the second semiconductor elements and on the surface of the substrate between adjacent second semiconductor elements but not on the sloped surfaces; and a layer of a fourth semiconductor having a fourth band gap energy larger than the third band gap energy disposed on and burying the layers of the second and third semiconductors.
摘要翻译：量子线结构包括具有表面和第一带隙能量的第一半导体的衬底; 具有第二带隙能量的第二半导体层，并且包括以不大于100nm的间隔以图案间隔开的布置在所述衬底的表面上的第二半导体元件，每个第二半导体元件具有梯形横截面横截面并且包括大致平行于半导体衬底的表面的上表面和倾斜表面，使得第三半导体不在倾斜表面上生长; 第三半导体层，其具有比设置在第二半导体元件的上表面上的第一和第二带隙能量小的第三带隙能量，并且在相邻的第二半导体元件之间的衬底的表面上，而不是在倾斜表面上; 以及具有比第三带隙能量大的第四带隙能量的第四半导体层，其布置在第二和第三半导体的层上并被掩埋。

8. 发明授权

US4788161A Method of producing an end surface light emission type semiconductor device 失效
标题翻译：制造端面发光型半导体器件的方法
公开(公告)号：US4788161A
公开(公告)日：1988-11-29
申请号：US130547
申请日：1987-12-09
申请人： Katsuhiko Goto , Shogo Takahashi , Etsuji Omura
发明人： Katsuhiko Goto , Shogo Takahashi , Etsuji Omura
IPC分类号： H01L33/20 , H01L33/58 , H01L21/306
CPC分类号： H01L33/20
摘要： A method of producing an end surface light emmision type semiconductor device comprising: a process of producing a lower cladding layer, an active layer, and an upper cladding layer on a semiconductor substrate; a process of forming a stripe groove of a predetermined depth reaching the lower cladding layer at a predetermined position of the wafer to produce an output end surface; a process of depositing photosensitive material in the groove; a process of producing a required number of lenses from the photosensitive material; and a process of dividing the wafer into a plurality of lens-appended end surface light emission type semiconductor devices.
摘要翻译：一种制造端面光发射型半导体器件的方法，包括：在半导体衬底上制造下包层，有源层和上包层的工艺; 在晶片的预定位置处形成到达下包层的预定深度的条纹沟槽以产生输出端面的工艺; 将感光材料沉积在凹槽中的工艺; 从感光材料制造所需数量的透镜的过程; 以及将晶片分割成多个透镜附加端面发光型半导体器件的处理。

9. 发明授权

US5671242A Strained quantum well structure 失效
标题翻译：应变量子阱结构
公开(公告)号：US5671242A
公开(公告)日：1997-09-23
申请号：US515909
申请日：1995-08-16
申请人： Tohru Takiguchi , Katsuhiko Goto
发明人： Tohru Takiguchi , Katsuhiko Goto
IPC分类号： H01L21/20 , G02F1/017 , H01S5/00 , H01S5/026 , H01S5/227 , H01S5/34 , H01S5/343 , H01S3/19 , H01L29/06
CPC分类号： B82Y20/00 , G02F1/01708 , H01S5/0265 , H01S5/34 , G02F2001/01766 , H01S5/2272 , H01S5/2275 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313 , H01S5/3434
摘要： A semiconductor device includes a substrate having a lattice constant and a stress compensation strained quantum well layer including compressively strained layers having a lattice constant larger than the lattice constant of the substrate and tensively strained layers having a lattice constant smaller than the lattice constant of the substrate which are alternatingly laminated on the substrate, wherein the average strain of the stress compensation strained quantum well layer is a positive quantity. Therefore, the critical thickness of the strained quantum well layer is increased so that the degree of freedom in designing the strained quantum well layer is increased, resulting in a semiconductor device with improved characteristics.
摘要翻译：半导体器件包括具有晶格常数的衬底和应力补偿应变量子阱层，其包括具有大于衬底的晶格常数的晶格常数的压缩应变层和具有小于衬底的晶格常数的晶格常数的紧张应变层其交替层压在基板上，其中应力补偿应变量子阱层的平均应变为正量。因此，应变量子阱层的临界厚度增加，使得应变量子阱层的设计自由度增加，导致具有改进特性的半导体器件。

10. 发明授权

US5544188A Semiconductor laser device having a high emission efficiency and a large modulation bandwidth 失效
标题翻译：具有高发光效率和大调制带宽的半导体激光器件
公开(公告)号：US5544188A
公开(公告)日：1996-08-06
申请号：US348191
申请日：1994-11-28
申请人： Tohru Takiguchi , Katsuhiko Goto
发明人： Tohru Takiguchi , Katsuhiko Goto
IPC分类号： H01S5/00 , H01S5/06 , H01S5/34 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/34 , H01S2301/04 , H01S5/3407 , H01S5/3415 , H01S5/3416
摘要： A semiconductor laser device includes an active layer having a multiquantum well (MQW) structure including well layers and barrier layers, each well layer being disposed between a pair of barrier layers. In this structure, the barrier layers have respective band gap energies that gradually decrease from a largest value in a central part of the MQW structure toward interfaces of the MQW structure with other layers of the laser and the well layers have respective band gap energies that gradually increase from a smallest value in the central part of the MQW structure toward the interfaces. A semiconductor laser device that produces uniform charge carrier injection, has a high thermal electron emission efficiency, and a broad modulation bandwidth is realized.
摘要翻译：半导体激光器件包括具有包括阱层和阻挡层的多量子阱（MQW）结构的有源层，每个阱层设置在一对势垒层之间。在这种结构中，势垒层具有从MQW结构的中心部分的最大值朝向MQW结构与激光的其它层的界面逐渐减小的带隙能量，并且阱层具有逐渐的各自的带隙能量从MQW结构的中心部分的最小值向接口增加。产生均匀的电荷载流子注入的半导体激光器件具有高的热电子发射效率，并且实现了宽的调制带宽。

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