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1. 发明授权

US07800935B2 Resistance change memory device 有权
标题翻译：电阻变化记忆装置
公开(公告)号：US07800935B2
公开(公告)日：2010-09-21
申请号：US12252675
申请日：2008-10-16
申请人： Hiroshi Maejima , Katsuaki Isobe , Naoya Tokiwa , Satoru Takase , Yasuyuki Fukuda , Hideo Mukai , Tsuneo Inaba
发明人： Hiroshi Maejima , Katsuaki Isobe , Naoya Tokiwa , Satoru Takase , Yasuyuki Fukuda , Hideo Mukai , Tsuneo Inaba
IPC分类号： G11C11/00
CPC分类号： G11C13/0009 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C13/0064 , G11C13/0069 , G11C2211/5642 , G11C2213/11 , G11C2213/34 , G11C2213/56 , G11C2213/72
摘要： A resistance change memory device including memory cells arranged, the memory cell having a stable state with a high resistance value and storing in a non-volatile manner such multi-level data that at least three resistance values, R0, R1 and R2 (R0 ΔR2.
摘要翻译：一种包括存储单元的电阻变化存储器件，所述存储器单元具有具有高电阻值的稳定状态并且以非易失性方式存储这样的多电平数据：至少三个电阻值R0，R1和R2（R0 < R1 ＆Dgr; R2的关系。

2. 发明申请

US20090237979A1 SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY SYSTEM 有权
标题翻译：半导体存储器件和半导体存储器系统
公开(公告)号：US20090237979A1
公开(公告)日：2009-09-24
申请号：US12408232
申请日：2009-03-20
申请人： Hideo Mukai , Hiroshi Maejima , Satoru Takase , Naoya Tokiwa , Katsuaki Isobe
发明人： Hideo Mukai , Hiroshi Maejima , Satoru Takase , Naoya Tokiwa , Katsuaki Isobe
IPC分类号： G11C11/00 , G11C7/22
CPC分类号： G11C8/10 , G11C7/18 , G11C7/22 , G11C8/08 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0023 , G11C13/0028 , G11C13/0069 , G11C2013/0076 , G11C2207/2263 , G11C2211/5647 , G11C2213/31 , G11C2213/56 , G11C2213/72
摘要： A semiconduct or memory device comprises a memory cell array including a plurality of memory cells arranged at intersections of word lines and bit lines; a read/write circuit operative to execute data read/write to the memory cell; and an operational circuit operative to compare certain length data read out by the read/write circuit from plural ones of the memory cells with certain length data to be written in the plural memory cells to make a decision, and create a flag representing the decision result. The read/write circuit inverts each bit in the certain length data to be written in the memory cells in accordance with the flag, and writes only rewrite-intended data of the certain length data and the flag. The read/write circuit reads the certain length data together with the flag corresponding thereto, and inverts each bit in the certain length data in accordance with the flag.
摘要翻译：半导体或存储器件包括存储单元阵列，其包括布置在字线和位线的交点处的多个存储单元; 读/写电路，用于执行对存储器单元的数据读/写; 以及操作电路，用于将来自多个存储器单元的读/写电路读出的某些长度数据与要写入多个存储器单元的一定长度数据进行比较，并作出决定，并创建表示决定结果的标志。读/写电路根据该标志反转要写入存储单元的一定长度数据中的每个位，并且仅写入特定长度数据和标志的重写预期数据。读/写电路读取与其对应的标志一定的长度数据，并根据该标志反转一定长度数据中的每一位。

3. 发明授权

US07876626B2 Semiconductor memory device and semiconductor memory system 有权
标题翻译：半导体存储器件和半导体存储器系统
公开(公告)号：US07876626B2
公开(公告)日：2011-01-25
申请号：US12408232
申请日：2009-03-20
申请人： Hideo Mukai , Hiroshi Maejima , Satoru Takase , Naoya Tokiwa , Katsuaki Isobe
发明人： Hideo Mukai , Hiroshi Maejima , Satoru Takase , Naoya Tokiwa , Katsuaki Isobe
IPC分类号： G11C7/00
CPC分类号： G11C8/10 , G11C7/18 , G11C7/22 , G11C8/08 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0023 , G11C13/0028 , G11C13/0069 , G11C2013/0076 , G11C2207/2263 , G11C2211/5647 , G11C2213/31 , G11C2213/56 , G11C2213/72
摘要： A semiconductor memory device comprises a memory cell array including a plurality of memory cells arranged at intersections of word lines and bit lines; a read/write circuit operative to execute data read/write to the memory cell; and an operational circuit operative to compare certain length data read out by the read/write circuit from plural ones of the memory cells with certain length data to be written in the plural memory cells to make a decision, and create a flag representing the decision result. The read/write circuit inverts each bit in the certain length data to be written in the memory cells in accordance with the flag, and writes only rewrite-intended data of the certain length data and the flag. The read/write circuit reads the certain length data together with the flag corresponding thereto, and inverts each bit in the certain length data in accordance with the flag.
摘要翻译：半导体存储器件包括存储单元阵列，其包括布置在字线和位线的交点处的多个存储单元; 读/写电路，用于执行对存储器单元的数据读/写; 以及操作电路，用于将来自多个存储器单元的读/写电路读出的某些长度数据与要写入多个存储器单元的一定长度数据进行比较，并作出决定，并创建表示决定结果的标志。读/写电路根据该标志反转要写入存储单元的一定长度数据中的每个位，并且仅写入特定长度数据和标志的重写预期数据。读/写电路读取与其对应的标志一定的长度数据，并根据该标志反转一定长度数据中的每一位。

4. 发明申请

US20090109728A1 RESISTANCE CHANGE MEMORY DEVICE 有权
标题翻译：电阻变化存储器件
公开(公告)号：US20090109728A1
公开(公告)日：2009-04-30
申请号：US12252675
申请日：2008-10-16
申请人： Hiroshi MAEJIMA , Katsuaki Isobe , Naoya Tokiwa , Satoru Takase , Yasuyuki Fukuda , Hideo Mukai , Tsuneo Inaba
发明人： Hiroshi MAEJIMA , Katsuaki Isobe , Naoya Tokiwa , Satoru Takase , Yasuyuki Fukuda , Hideo Mukai , Tsuneo Inaba
IPC分类号： G11C11/00 , G11C11/416
CPC分类号： G11C13/0009 , G11C11/56 , G11C11/5678 , G11C13/0004 , G11C13/004 , G11C13/0064 , G11C13/0069 , G11C2211/5642 , G11C2213/11 , G11C2213/34 , G11C2213/56 , G11C2213/72
摘要： A resistance change memory device including memory cells arranged, the memory cell having a stable state with a high resistance value and storing in a non-volatile manner such multi-level data that at least three resistance values, R0, R1 and R2 (R0 ΔR2.
摘要翻译：一种包括存储单元的电阻变化存储器件，所述存储器单元具有具有高电阻值的稳定状态并且以非易失性方式存储这样的多电平数据：至少三个电阻值R0，R1和R2（R0 < R1 DeltaR2的关系。

5. 发明申请

US20090219750A1 NONVOLATILE MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME 审中-公开
标题翻译：非易失性存储器件及其控制方法
公开(公告)号：US20090219750A1
公开(公告)日：2009-09-03
申请号：US12394487
申请日：2009-02-27
申请人： Naoya TOKIWA , Hiroshi Maejima , Hideo Mukai
发明人： Naoya TOKIWA , Hiroshi Maejima , Hideo Mukai
IPC分类号： G11C11/00 , G11C7/00 , G11C8/00
CPC分类号： G11C17/12 , G11C5/02 , G11C8/08 , G11C8/14 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0023 , G11C13/0028 , G11C13/0061 , G11C13/0069 , G11C2013/0092 , G11C2213/31 , G11C2213/56 , G11C2213/71 , G11C2213/72
摘要： A nonvolatile memory device comprises a memory cell array including first and second mutually crossing lines and electrically erasable programmable memory cells arranged at intersections of the first and second lines, each memory cell containing a variable resistive element; a line selector circuit operative to decode an address signal to select the first and second lines; and a control circuit operative to execute control on at least one of data erase, write and read for the memory cell connected between the first and second lines selected at the line selector circuit. The control circuit executes control based on one parameter selected among a plurality of parameters. The line selector circuit specifies the parameter based on a first address portion in the address signal and selects the first and second lines based on a second address portion in the address signal.
摘要翻译：非易失性存储器件包括存储单元阵列，其包括第一和第二相交线以及布置在第一和第二线的交点处的电可擦除可编程存储单元，每个存储单元包含可变电阻元件; 行选择器电路，用于解码地址信号以选择第一和第二行; 以及控制电路，用于对连接在线选择器电路中选择的第一和第二线之间的存储单元的数据擦除，写入和读取中的至少一个执行控制。控制电路基于从多个参数中选择的一个参数来执行控制。线选择器电路基于地址信号中的第一地址部分来指定参数，并且基于地址信号中的第二地址部分选择第一和第二行。

6. 发明申请

US20120201070A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND DATA WRITING METHOD THEREFOR 有权
标题翻译：非易失性半导体存储器件及其数据写入方法
公开(公告)号：US20120201070A1
公开(公告)日：2012-08-09
申请号：US13415953
申请日：2012-03-09
申请人： Hiroshi Maejima , Katsuaki Isobe , Hideo Mukai
发明人： Hiroshi Maejima , Katsuaki Isobe , Hideo Mukai
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C7/00 , G11C13/0004 , G11C13/0011 , G11C13/0064 , G11C13/0069 , G11C2013/009 , G11C2213/31 , G11C2213/56 , G11C2213/71 , G11C2213/72
摘要： A nonvolatile semiconductor storage device includes first and second intersecting wires; a electrically rewritable memory cell disposed at each intersection of the first second wires, including a variable resistor for memorizing a resistance value as data in a nonvolatile manner and a rectifying device are connected in series; and a control circuit which applies a voltage necessary for writing of data to the first and second wires. The control circuit precharges a non-selected second wire to a standby voltage larger than a reference voltage prior to programming a variable resistor connected to selected first and second wires by supplying the reference voltage to a non-selected first wire and the selected second wire, applying to the selected first wire a program voltage for programming of the selected variable resistor and applying to the non-selected second wire a control voltage which prevents the rectifying device from turning ON.
摘要翻译：非易失性半导体存储装置包括第一和第二相交线; 在第一第二导线的交点设置有包含用于将电阻值作为数据非易失性地存储的可变电阻器和整流装置的电可重写存储单元串联连接; 以及控制电路，其向第一和第二导线施加写入数据所需的电压。在通过将参考电压提供给未选择的第一线和所选择的第二线之前，控制电路将未选择的第二线预充电至大于参考电压的待机电压，然后再对连接到所选择的第一和第二线的可变电阻进行编程，向所选择的第一线施加用于对所选择的可变电阻器进行编程的编程电压，并向未选择的第二线施加防止整流装置导通的控制电压。

7. 发明申请

US20090207647A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND DATA WRITING METHOD THEREFOR 有权
标题翻译：非易失性半导体存储器件及其数据写入方法
公开(公告)号：US20090207647A1
公开(公告)日：2009-08-20
申请号：US12370111
申请日：2009-02-12
申请人： Hiroshi MAEJIMA , Katsuaki Isobe , Hideo Mukai
发明人： Hiroshi MAEJIMA , Katsuaki Isobe , Hideo Mukai
IPC分类号： G11C11/00 , G11C7/00 , G11C11/416
CPC分类号： G11C13/0007 , G11C7/00 , G11C13/0004 , G11C13/0011 , G11C13/0064 , G11C13/0069 , G11C2013/009 , G11C2213/31 , G11C2213/56 , G11C2213/71 , G11C2213/72
摘要： A nonvolatile semiconductor storage device comprises: a first wire and a second wire intersecting each other; a memory cell which is disposed at each intersection of the first wire and the second wire and electrically rewritable and in which a variable resistor for memorizing a resistance value as data in a nonvolatile manner and a rectifying device are connected in series; and a control circuit which applies a voltage necessary for writing of data to the first and second wires. The control circuit precharges a non-selected second wire up to a standby voltage larger than a reference voltage prior to a set operation for programming only a variable resistor connected to selected first and second wires by supplying the reference voltage to a non-selected first wire and the selected second wire, applying a program voltage necessary for programming of the selected variable resistor based on the reference voltage to the selected first wire and applying a control voltage which prevents the rectifying device from turning ON based on the program voltage to the non-selected second wire.
摘要翻译：非易失性半导体存储装置包括：第一线和彼此交叉的第二线; 存储单元，其配置在所述第一配线和所述第二配线的各交叉点并且是电可重写的，并且其中存储用作非易失性数据的电阻值的可变电阻器和整流装置串联连接; 以及控制电路，其向第一和第二导线施加写入数据所需的电压。控制电路在设置操作之前将未选择的第二线预充电到大于参考电压的待机电压，以仅通过将参考电压提供给未选择的第一线来仅编程连接到所选择的第一和第二线的可变电阻器和所选择的第二线路，基于参考电压将所选择的可变电阻器编程所需的编程电压施加到所选择的第一线路，并施加防止整流装置导通的控制电压，选择第二根线。

8. 发明授权

US08315110B2 Nonvolatile semiconductor memory device 有权
公开(公告)号：US08315110B2
公开(公告)日：2012-11-20
申请号：US13315967
申请日：2011-12-09
申请人： Hideo Mukai , Hiroshi Maejima , Katsuaki Isobe
发明人： Hideo Mukai , Hiroshi Maejima , Katsuaki Isobe
IPC分类号： G11C7/10
摘要： A nonvolatile-semiconductor-memory-device including a cell array having a plurality of MATs (unit-cell-array) disposed in a matrix, the MATs each include a plurality of first lines, a plurality of second lines crossing the first lines, and memory cells being connected between the first and second lines. The device further includes a first and second drive circuit selecting the first and second lines connected to the memory cells of each MAT that are accessed, and driving the selected first and second lines to write or read data. The memory cells form a page by being connected to each first line selected from the MATs. The device also includes a data latch latching the write or the read data in units of pages, where the first and second drive circuit drive the first and second lines multiple times to write or read data for one page in and out of the cell array.

9. 发明授权

US08089818B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08089818B2
公开(公告)日：2012-01-03
申请号：US12580795
申请日：2009-10-16
申请人： Hideo Mukai , Hiroshi Maejima , Katsuaki Isobe
发明人： Hideo Mukai , Hiroshi Maejima , Katsuaki Isobe
IPC分类号： G11C7/10
CPC分类号： G11C8/14 , G11C7/18 , G11C8/12 , G11C13/0004 , G11C13/0007 , G11C13/0011 , G11C13/0028 , G11C2213/31 , G11C2213/72
摘要： A nonvolatile-semiconductor-memory-device including a cell array having a plurality of MATs (unit-cell-array) disposed in a matrix, the MATs each include a plurality of first lines, a plurality of second lines crossing the first lines, and memory cells being connected between the first and second lines. The device further includes a first and second drive circuit selecting the first and second lines connected to the memory cells of each MAT that are accessed, and driving the selected first and second lines to write or read data. The memory cells form a page by being connected to each first line selected from the MATs. The device also includes a data latch latching the write or the read data in units of pages, where the first and second drive circuit drive the first and second lines multiple times to write or read data for one page in and out of the cell array.
摘要翻译：一种非易失性半导体存储器件，包括具有以矩阵形式设置的多个MAT（单位阵列）的单元阵列，所述MAT各包括多条第一线，与第一线交叉的多条第二线，以及存储单元连接在第一和第二线之间。该装置还包括第一和第二驱动电路，选择连接到每个MAT的存储器单元的第一和第二线，所述存储器单元被访问，并且驱动所选择的第一和第二行来写入或读取数据。存储单元通过连接到从MAT中选择的每个第一行形成页面。该设备还包括以页为单位锁存写入或读取数据的数据锁存器，其中第一和第二驱动电路多次驱动第一和第二行以写入或读取单元阵列中的一页的数据。

10. 发明申请

US20110128775A1 NONVOLATILE SEMICONDUCTOR STORAGE DEVICE AND DATA WRITING METHOD THEREFOR 有权
标题翻译：非易失性半导体存储器件及其数据写入方法
公开(公告)号：US20110128775A1
公开(公告)日：2011-06-02
申请号：US13024926
申请日：2011-02-10
申请人： Hiroshi MAEJIMA , Katsuaki Isobe , Hideo Mukai
发明人： Hiroshi MAEJIMA , Katsuaki Isobe , Hideo Mukai
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C7/00 , G11C13/0004 , G11C13/0011 , G11C13/0064 , G11C13/0069 , G11C2013/009 , G11C2213/31 , G11C2213/56 , G11C2213/71 , G11C2213/72
摘要： A nonvolatile semiconductor storage device comprises: a first wire and a second wire intersecting each other; a memory cell which is disposed at each intersection of the first wire and the second wire and electrically rewritable and in which a variable resistor for memorizing a resistance value as data in a nonvolatile manner and a rectifying device are connected in series; and a control circuit which applies a voltage necessary for writing of data to the first and second wires. The control circuit precharges a non-selected second wire up to a standby voltage larger than a reference voltage prior to a set operation for programming only a variable resistor connected to selected first and second wires by supplying the reference voltage to a non-selected first wire and the selected second wire, applying a program voltage necessary for programming of the selected variable resistor based on the reference voltage to the selected first wire and applying a control voltage which prevents the rectifying device from turning ON based on the program voltage to the non-selected second wire.
摘要翻译：非易失性半导体存储装置包括：第一线和彼此交叉的第二线; 存储单元，其配置在所述第一配线和所述第二配线的各交叉点并且是电可重写的，并且其中存储用作非易失性数据的电阻值的可变电阻器和整流装置串联连接; 以及控制电路，其向第一和第二导线施加写入数据所需的电压。控制电路在设置操作之前将未选择的第二线预充电到大于参考电压的待机电压，以仅通过将参考电压提供给未选择的第一线来仅编程连接到所选择的第一和第二线的可变电阻器和所选择的第二线路，基于参考电压将所选择的可变电阻器编程所需的编程电压施加到所选择的第一线路，并施加防止整流装置导通的控制电压，选择第二根线。

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