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    • 2. 发明授权
    • Apparatus for transporting card-like information recording medium
    • 用于传送卡状信息记录介质的装置
    • US4950877A
    • 1990-08-21
    • US152811
    • 1988-02-05
    • Hideo KuriharaHitoshi Kurihara
    • Hideo KuriharaHitoshi Kurihara
    • G06K13/06G06K13/08G11B19/00
    • G06K13/0893G06K13/08
    • An apparatus for transporting, cleaning or performing recording and/or reproducing of information from a card-like medium is disclosed. The recording medium includes an information recording area and a non-recording area. The transporting apparatus includes a receiving transport device and a discharging transport device. The receiving transport device transports the recording medium into and within the apparatus. The discharging transport device discharges the card-like information recording medium outside the apparatus and includes transporting the recording medium and stopping the recording medium such that the information recording area remains within the apparatus. The apparatus for cleaning the recording medium includes a cleaning device for cleaning the recording medium, a moving device for moving the recording medium relative to the cleaning device and a receiving device for receiving the recording medium in the apparatus. A discharging device transports the recording medium and stops the medium so that the information recording area remains within the apparatus. The apparatus for recording information on and/or reproducing information from the recording medium includes a head unit for performing the recording and/or reproducing of information. A moving device moves the recording medium relative to the head unit and a receiving device receives the recording medium in the apparatus. The recording medium is discharged by a discharging device, so that the information recording area remains within the apparatus.
    • 公开了一种用于从卡状介质传送,清洁或执行信息的记录和/或再现的装置。 记录介质包括信息记录区和非记录区。 输送装置包括接收输送装置和排出输送装置。 接收传送设备将记录介质传送到设备内部和内部。 放电输送装置将卡片状信息记录介质放出设备外部,并且包括传送记录介质并停止记录介质,使得信息记录区域保持在设备内。 用于清洁记录介质的设备包括用于清洁记录介质的清洁装置,用于相对于清洁装置移动记录介质的移动装置和用于在设备中接收记录介质的接收装置。 放电装置传送记录介质并停止介质,使得信息记录区域保持在设备内。 用于在记录介质上记录和/或再现信息的设备包括用于执行信息的记录和/或再现的头单元。 移动装置相对于头单元移动记录介质,并且接收装置在设备中接收记录介质。 记录介质通过排出装置排出,使得信息记录区域保持在装置内。
    • 4. 发明授权
    • Semiconductor device manufacturing method including forming FOX with dual oxidation
    • 半导体器件制造方法,包括形成具有双重氧化的FOX
    • US06579769B2
    • 2003-06-17
    • US09726384
    • 2000-12-01
    • Hiroyuki ShimadaMasaaki HigashitaniHideo KuriharaHideki KomoriSatoshi Takahashi
    • Hiroyuki ShimadaMasaaki HigashitaniHideo KuriharaHideki KomoriSatoshi Takahashi
    • H01L21336
    • H01L21/76221
    • In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming a first window in the oxidation preventing layer, placing the semiconductor substrate in a first atmosphere in which an oxygen gas and a first amount of a chlorine gas are supplied through and then heating the semiconductor substrate at a first temperature such that a first selective oxide film is to grown by thermally oxidizing the surface of the semiconductor substrate exposed from the first window, forming a second window by patterning the oxidation preventing layer, and placing the semiconductor substrate in a second atmosphere in which the oxygen gas and a second amount, which is larger than the first amount, of the chlorine gas are supplied through and then heating the semiconductor substrate at a second temperature such that a second selective oxide film is formed and that a thickness of the first selective oxide film formed below the first window is enhanced. Accordingly, generation of projection on bird's beak of a selective oxide film can be prevented in a semiconductor device manufacturing method including a step of growing a local oxidation of silicon film.
    • 在制造半导体器件的方法中,包括在半导体衬底的表面上形成防氧化层的步骤,在氧化防止层中形成第一窗口,将半导体衬底放置在第一气氛中,其中氧气 气体和第一量的氯气通过第一温度被供应,然后在第一温度下加热半导体衬底,使得通过热氧化从第一窗口暴露的半导体衬底的表面来生长第一选择性氧化物膜,形成第二 通过图案化氧化防止层,并将半导体衬底放置在第二气氛中,在第二气氛中,将氧气和大于第一量的第二量的氯气供给到第二气氛中,然后在 第二温度使得形成第二选择性氧化物膜,并且形成第一选择性氧化物膜的厚度 增强了形成在第一窗口下方的氧化膜。 因此,在包括生长硅膜的局部氧化的步骤的半导体器件制造方法中,可以防止在选择性氧化物膜的鸟嘴上产生投影。