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    • 1. 发明授权
    • Semiconductor device manufacturing method including forming FOX with dual oxidation
    • 半导体器件制造方法,包括形成具有双重氧化的FOX
    • US06579769B2
    • 2003-06-17
    • US09726384
    • 2000-12-01
    • Hiroyuki ShimadaMasaaki HigashitaniHideo KuriharaHideki KomoriSatoshi Takahashi
    • Hiroyuki ShimadaMasaaki HigashitaniHideo KuriharaHideki KomoriSatoshi Takahashi
    • H01L21336
    • H01L21/76221
    • In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming a first window in the oxidation preventing layer, placing the semiconductor substrate in a first atmosphere in which an oxygen gas and a first amount of a chlorine gas are supplied through and then heating the semiconductor substrate at a first temperature such that a first selective oxide film is to grown by thermally oxidizing the surface of the semiconductor substrate exposed from the first window, forming a second window by patterning the oxidation preventing layer, and placing the semiconductor substrate in a second atmosphere in which the oxygen gas and a second amount, which is larger than the first amount, of the chlorine gas are supplied through and then heating the semiconductor substrate at a second temperature such that a second selective oxide film is formed and that a thickness of the first selective oxide film formed below the first window is enhanced. Accordingly, generation of projection on bird's beak of a selective oxide film can be prevented in a semiconductor device manufacturing method including a step of growing a local oxidation of silicon film.
    • 在制造半导体器件的方法中,包括在半导体衬底的表面上形成防氧化层的步骤,在氧化防止层中形成第一窗口,将半导体衬底放置在第一气氛中,其中氧气 气体和第一量的氯气通过第一温度被供应,然后在第一温度下加热半导体衬底,使得通过热氧化从第一窗口暴露的半导体衬底的表面来生长第一选择性氧化物膜,形成第二 通过图案化氧化防止层,并将半导体衬底放置在第二气氛中,在第二气氛中,将氧气和大于第一量的第二量的氯气供给到第二气氛中,然后在 第二温度使得形成第二选择性氧化物膜,并且形成第一选择性氧化物膜的厚度 增强了形成在第一窗口下方的氧化膜。 因此,在包括生长硅膜的局部氧化的步骤的半导体器件制造方法中,可以防止在选择性氧化物膜的鸟嘴上产生投影。
    • 2. 发明授权
    • Semiconductor device manufacturing method including various oxidation steps with different concentration of chlorine to form a field oxide
    • 包括具有不同浓度的氯的各种氧化步骤以形成场氧化物的半导体器件制造方法
    • US06187640B1
    • 2001-02-13
    • US09193252
    • 1998-11-17
    • Hiroyuki ShimadaMasaaki HigashitaniHideo KuriharaHideki KomoriSatoshi Takahashi
    • Hiroyuki ShimadaMasaaki HigashitaniHideo KuriharaHideki KomoriSatoshi Takahashi
    • H01L21336
    • H01L21/76221
    • In a method of manufacturing a semiconductor device, there are comprised the steps of forming an oxidation preventing layer on a surface of a semiconductor substrate, forming first window in the oxidation preventing layer, placing the semiconductor substrate in a first atmosphere in which an oxygen gas and a first amount of a chlorine gas are supplied through and then heating the semiconductor substrate at a first temperature such that a first selective oxide film is to grown by thermally oxidizing the surface of the semiconductor substrate exposed from the first window, forming a second window by patterning the oxidation preventing layer, and placing the semiconductor substrate in a second atmosphere in which the oxygen gas and a second amount, which is larger than the first amount, of the chlorine gas are supplied through and then heating the semiconductor substrate at a second temperature such that a second selective oxide film is formed and that a thickness of the first selective oxide film formed below the first window is enhanced. Accordingly, generation of projection on bird's beak of a selective oxide film can be prevented in a semiconductor device manufacturing method including a step of growing a local oxidation of silicon film.
    • 在制造半导体器件的方法中,包括在半导体衬底的表面上形成氧化防止层的步骤,在氧化防止层中形成第一窗口,将半导体衬底放置在第一气氛中,其中氧气 并且在第一温度下通过第一量的氯气供应第一量的氯气,然后在第一温度下加热第一选择性氧化物膜,以便通过热氧化从第一窗口露出的半导体衬底的表面生长第一选择性氧化物膜,形成第二窗口 通过图案化氧化防止层,并且将半导体衬底放置在第二气氛中,在第二气氛中,将氧气和大于第一量的第二量的氯气供给到第二气氛中,然后再次加热半导体衬底 温度使得形成第二选择性氧化物膜,并且第一选择性氧化物膜的厚度 在第一窗口下方形成的底片增强。 因此,在包括生长硅膜的局部氧化的步骤的半导体器件制造方法中,可以防止在选择性氧化物膜的鸟嘴上产生投影。