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1. 发明申请

US20100048666A1 NOVEL PHENYLACETIC ACID DERIVATIVE 有权
标题翻译：新颖的苯甲酸衍生物
公开(公告)号：US20100048666A1
公开(公告)日：2010-02-25
申请号：US12440540
申请日：2007-09-10
申请人： Hideo Kato , Osamu Nagata , Yoshiyuki Iwabuchi , Takahiro Sato , Junichiro Uda , Tutomu Inoue , Hiroshi Nakamura , Nobuhide Kawasaki , Ippei Tanaka , Naoki Kurita , Tomohiko Ishikawa
发明人： Hideo Kato , Osamu Nagata , Yoshiyuki Iwabuchi , Takahiro Sato , Junichiro Uda , Tutomu Inoue , Hiroshi Nakamura , Nobuhide Kawasaki , Ippei Tanaka , Naoki Kurita , Tomohiko Ishikawa
IPC分类号： A61K31/382 , C07D335/02 , A61K31/381 , C07D333/38 , C07D333/32 , A61P13/02 , A61P13/08 , A61P13/10 , A61P3/10 , A61P35/00
CPC分类号： C07D335/02 , C07D333/24 , C07D333/28 , C07D333/32 , C07D333/38 , C07D333/48
摘要： A compound represented by the formula (1) or a salt thereof ( represents a single bond, or a double bond; R1 represents hydrogen atom, or an alkyl group; R2 and R3 represent hydrogen atom, or an alkyl group; R4 and R5 represent hydrogen atom, hydroxy group, an alkoxyl group, a halogen atom, or a mono- or di-alkyl-substituted amino group; R6 represents hydrogen atom, cyano group, an alkoxycarbonyl group, or carboxy group; R7 represents one or two of substituents on the benzene ring (the substituents are selected from hydrogen atom, a halogen atom, nitro group, cyano group, hydroxy group, amino group, an alkyl group, and an alkoxyl group); A represents a 5-membered or 6-membered non-aromatic heterocyclic ring containing one or two contiguous sulfur atoms (the sulfur atoms may independently form oxide); W represents oxo group, hydrogen atom, an alkyl group, hydroxy group, an alkoxyl group, or a halogen atom; and X represents oxygen atom, or sulfur atom), or a salt thereof, which has a superior suppressing action against prostaglandin E2 production and is useful as an active ingredient of medicaments with reduced adverse reactions such as gastrointestinal disorders.
摘要翻译：由式（1）表示的化合物或其盐（表示单键或双键; R1表示氢原子或烷基; R2和R3表示氢原子或烷基; R4和R5表示氢原子，羟基，烷氧基，卤素原子或一或二烷基取代的氨基; R 6表示氢原子，氰基，烷氧基羰基或羧基; R 7表示一个或两个取代基在苯环上（取代基选自氢原子，卤素原子，硝基，氰基，羟基，氨基，烷基和烷氧基）; A表示5元或6元非含有一个或两个相邻硫原子的杂环（硫原子可以独立地形成氧化物）; W表示氧代基，氢原子，烷基，羟基，烷氧基或卤素原子; X表示氧原子，或硫原子）或其盐对前列腺素E2产生的抑制作用较差，并且可用作具有减少的不良反应如胃肠道疾病的药物的活性成分。

2. 发明授权

US08148421B2 Phenylacetic acid derivative 有权
标题翻译：苯乙酸衍生物
公开(公告)号：US08148421B2
公开(公告)日：2012-04-03
申请号：US12440540
申请日：2007-09-10
申请人： Hideo Kato , Osamu Nagata , Yoshiyuki Iwabuchi , Takahiro Sato , Junichiro Uda , Tutomu Inoue , Hiroshi Nakamura , Nobuhide Kawasaki , Ippei Tanaka , Naoki Kurita , Tomohiko Ishikawa
发明人： Hideo Kato , Osamu Nagata , Yoshiyuki Iwabuchi , Takahiro Sato , Junichiro Uda , Tutomu Inoue , Hiroshi Nakamura , Nobuhide Kawasaki , Ippei Tanaka , Naoki Kurita , Tomohiko Ishikawa
IPC分类号： A61K31/382 , C07D335/02
CPC分类号： C07D335/02 , C07D333/24 , C07D333/28 , C07D333/32 , C07D333/38 , C07D333/48
摘要： A compound represented by the formula (1) or a salt thereof ( represents a single bond, or a double bond; R1 represents hydrogen atom, or an alkyl group; R2 and R3 represent hydrogen atom, or an alkyl group; R4 and R5 represent hydrogen atom, hydroxy group, an alkoxyl group, a halogen atom, or a mono- or di-alkyl-substituted amino group; R6 represents hydrogen atom, cyano group, an alkoxycarbonyl group, or carboxy group; R7 represents one or two of substituents on the benzene ring (the substituents are selected from hydrogen atom, a halogen atom, nitro group, cyano group, hydroxy group, amino group, an alkyl group, and an alkoxyl group); A represents a 5-membered or 6-membered non-aromatic heterocyclic ring containing one or two contiguous sulfur atoms (the sulfur atoms may independently form oxide); W represents oxo group, hydrogen atom, an alkyl group, hydroxy group, an alkoxyl group, or a halogen atom; and X represents oxygen atom, or sulfur atom), or a salt thereof, which has a superior suppressing action against prostaglandin E2 production and is useful as an active ingredient of medicaments with reduced adverse reactions such as gastrointestinal disorders.
摘要翻译：由式（1）表示的化合物或其盐（表示单键或双键; R1表示氢原子或烷基; R2和R3表示氢原子或烷基; R4和R5表示氢原子，羟基，烷氧基，卤素原子或一或二烷基取代的氨基; R 6表示氢原子，氰基，烷氧基羰基或羧基; R 7表示一个或两个取代基在苯环上（取代基选自氢原子，卤素原子，硝基，氰基，羟基，氨基，烷基和烷氧基）; A表示5元或6元非含有一个或两个相邻硫原子的杂环（硫原子可以独立地形成氧化物）; W表示氧代基，氢原子，烷基，羟基，烷氧基或卤素原子; X表示氧原子，或硫原子）或其盐对前列腺素E2产生的抑制作用较差，并且可用作具有减少的不良反应如胃肠道疾病的药物的活性成分。

3. 发明申请

US20060189811A1 Process for producing 1,2,4-triazole compound and intermediate therefor 审中-公开
标题翻译：生产1,2,4-三唑化合物及其中间体的方法
公开(公告)号：US20060189811A1
公开(公告)日：2006-08-24
申请号：US10565678
申请日：2004-07-23
申请人： Hiroshi Nakamura , Junichiro Uda , Atsushi Ohno , Takahiro Sato
发明人： Hiroshi Nakamura , Junichiro Uda , Atsushi Ohno , Takahiro Sato
IPC分类号： C07D403/14
CPC分类号： C07D403/14
摘要： Provided is a process for producing 1,2,4-triazole compound (5), or a salt or hydrate thereof which comprises reacting compound (1) with Rc-X (2) to give compound (3), reacting compound (3) with a nitrilization agent to give compound (4), and then removing the group Rc, as shown by the reaction scheme: (Wherein Ra, Rb and Rd represent a group, Rc represents a group which can be removed by an acid) A 1,2,4-triazole compound (5) having an optionally substituted 2-cyanopyridin-4-yl group at 3-position and an optionally substituted aromatic group at 5-position which inhibits a xanthine oxidase and is useful for treatment of gout and hyperuricemia can be obtained from compound (1) in a high yield without requiring isolation of reaction products in the course of reactions.
摘要翻译：本发明提供了使化合物（1）与Rc-X（2）反应得到化合物（3），使化合物（3）与化合物（3）反应的1,2,4-三唑化合物（5）或其盐或水合物的方法，与硝化剂反应得到化合物（4），然后除去Rc基团，如反应方案所示：（其中Ra，Rb和Rd表示基团，Rc表示可被酸除去的基团）A 1 ，3位具有任选取代的2-氰基吡啶-4-基的2,4-三唑化合物（5）和5位上任意取代的芳族基团，其抑制黄嘌呤氧化酶并且可用于治疗痛风和高尿酸血症可以以高产率从化合物（1）获得，而不需要在反应过程中分离反应产物。

4. 发明申请

US20060114729A1 Non-volatile semiconductor memory device and memory system using the same 失效
公开(公告)号：US20060114729A1
公开(公告)日：2006-06-01
申请号：US11243985
申请日：2005-10-06
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G11C7/10 , G11C11/34
CPC分类号： G11C29/785 , G06F11/1008 , G06F11/1068 , G06F2201/81 , G06F2212/2022 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459 , G11C29/34 , G11C29/52
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

5. 发明授权

US06967892B2 Non-volatile semiconductor memory device and memory system using the same 失效
标题翻译：非易失性半导体存储器件和使用其的存储器系统
公开(公告)号：US06967892B2
公开(公告)日：2005-11-22
申请号：US10804094
申请日：2004-03-19
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G06F11/10 , G11C16/10 , G11C16/12 , G11C16/34 , G11C29/00 , G11C29/34 , G11C29/52 , G11C16/04
CPC分类号： G11C29/785 , G06F11/1008 , G06F11/1068 , G06F2201/81 , G06F2212/2022 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459 , G11C29/34 , G11C29/52
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite oepration, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
摘要翻译：可以缩短程序验证和擦除验证操作所需的时间。即使重复执行写入和擦除操作，也可以抑制存储单元的阈值变化。在编程和擦除操作之后，可以根据每个位线上的电位的预充电之后的所有位线同时判断操作，而不改变列地址。在数据重写过程中，通过改变数据寄存器中的数据，对数据一次正确写入的存储单元不会影响重写操作。

6. 发明授权

US5909399A Non-volatile semiconductor memory device and memory system using the same 失效
标题翻译：非易失性半导体存储器件和使用其的存储器系统
公开(公告)号：US5909399A
公开(公告)日：1999-06-01
申请号：US100330
申请日：1998-06-19
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G06F11/10 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/34 , G11C29/00 , G11C29/34 , G11C29/52 , G11C13/00
CPC分类号： G11C29/785 , G06F11/1008 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3454 , G11C29/34 , G11C29/52 , G06F11/1068 , G06F2201/81 , G06F2212/2022
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite oepration, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
摘要翻译：可以缩短程序验证和擦除验证操作所需的时间。即使重复执行写入和擦除操作，也可以抑制存储单元的阈值变化。在编程和擦除操作之后，可以根据每个位线上的电位的预充电之后的所有位线同时判断操作，而不改变列地址。在数据重写过程中，通过改变数据寄存器中的数据，对数据一次正确写入的存储单元不会影响重写操作。

7. 发明授权

US5793696A Non-volatile semiconductor memory device and memory system using the same 失效
公开(公告)号：US5793696A
公开(公告)日：1998-08-11
申请号：US826820
申请日：1997-04-08
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G06F11/10 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/34 , G11C29/00 , G11C29/34 , G11C29/52 , G11C13/00
CPC分类号： G11C29/785 , G06F11/1008 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3454 , G11C29/34 , G11C29/52 , G06F11/1068 , G06F2201/81 , G06F2212/2022
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite oepration, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.

8. 发明授权

US5615165A Non-volatile semiconductor memory device and memory system using the same 失效
标题翻译：非易失性半导体存储器件和使用其的存储器系统
公开(公告)号：US5615165A
公开(公告)日：1997-03-25
申请号：US576564
申请日：1995-12-21
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G06F11/10 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/34 , G11C29/00 , G11C29/34 , G11C29/52 , G11C13/00
CPC分类号： G11C29/785 , G06F11/1008 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3454 , G11C29/34 , G11C29/52 , G06F11/1068 , G06F2201/81 , G06F2212/2022
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
摘要翻译：可以缩短程序验证和擦除验证操作所需的时间。即使重复执行写入和擦除操作，也可以抑制存储单元的阈值变化。在编程和擦除操作之后，可以根据每个位线上的电位的预充电之后的所有位线同时判断操作，而不改变列地址。在数据重写操作中，通过改变数据寄存器中的数据，对具有一次适当写入的数据的存储单元不进行重写操作。

9. 发明授权

US07139201B2 Non-volatile semiconductor memory device and memory system using the same 失效
标题翻译：非易失性半导体存储器件和使用其的存储器系统
公开(公告)号：US07139201B2
公开(公告)日：2006-11-21
申请号：US11243985
申请日：2005-10-06
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G11C11/34
CPC分类号： G11C29/785 , G06F11/1008 , G06F11/1068 , G06F2201/81 , G06F2212/2022 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459 , G11C29/34 , G11C29/52
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite operation, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
摘要翻译：可以缩短程序验证和擦除验证操作所需的时间。即使重复执行写入和擦除操作，也可以抑制存储单元的阈值变化。在编程和擦除操作之后，可以根据每个位线上的电位的预充电之后的所有位线同时判断操作，而不改变列地址。在数据重写操作中，通过改变数据寄存器中的数据，对具有一次适当写入的数据的存储单元不进行重写操作。

10. 发明授权

US06781895B1 Non-volatile semiconductor memory device and memory system using the same 失效
标题翻译：非易失性半导体存储器件和使用其的存储器系统
公开(公告)号：US06781895B1
公开(公告)日：2004-08-24
申请号：US09722474
申请日：2000-11-28
申请人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
发明人： Tomoharu Tanaka , Masaki Momodomi , Hideo Kato , Hiroto Nakai , Yoshiyuki Tanaka , Riichiro Shirota , Seiichi Aritome , Yasuo Itoh , Yoshihisa Iwata , Hiroshi Nakamura , Hideko Odaira , Yutaka Okamoto , Masamichi Asano , Kaoru Tokushige
IPC分类号： G11C700
CPC分类号： G11C29/785 , G06F11/1008 , G06F11/1068 , G06F2201/81 , G06F2212/2022 , G11C16/10 , G11C16/12 , G11C16/24 , G11C16/3436 , G11C16/344 , G11C16/3445 , G11C16/3454 , G11C16/3459 , G11C29/34 , G11C29/52
摘要： The time required for the program verify and erase verify operations can be shortened. The change of threshold values of memory cells can be suppressed even if the write and erase operations are executed repetitively. After the program and erase operations, whether the operations were properly executed can be judged simultaneously for all bit lines basing upon a change, after the pre-charge, of the potential at each bit line, without changing the column address. In the data rewrite oepration, the rewrite operation is not effected for a memory cell with the data once properly written, by changing the data in the data register.
摘要翻译：可以缩短程序验证和擦除验证操作所需的时间。即使重复执行写入和擦除操作，也可以抑制存储单元的阈值变化。在编程和擦除操作之后，可以根据每个位线上的电位的预充电之后的所有位线同时判断操作，而不改变列地址。在数据重写过程中，通过改变数据寄存器中的数据，对数据一次正确写入的存储单元不会影响重写操作。

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