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    • 7. 发明申请
    • FILM-FORMING MANUFACTURING APPARATUS AND METHOD
    • 电影制作装置和方法
    • US20120048180A1
    • 2012-03-01
    • US13196309
    • 2011-08-02
    • Hideki ItoToshiro TsumoriKunihiko Suzuki
    • Hideki ItoToshiro TsumoriKunihiko Suzuki
    • C30B25/10C23C16/46
    • C23C16/325C23C16/455C23C16/45519C23C16/45557C23C16/458C23C16/46C30B25/10
    • It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.
    • 本发明的目的是提供一种能够延长在外延生长技术中在高温条件下使用的加热器的寿命的成膜装置和成膜方法。 惰性气体排出部分将惰性气体供入包含加热器的空间中,然后气体在成膜期间通过气体排出部分排出,而不影响半导体基板。 因此,可以防止反应气体进入含有高温加热器的空间。 这使得可以防止反应气体中所含的氢气与构成加热器的SiC反应。 因此,可以防止由于SiC的分解而使用作为加热器的基材的碳然后与氢气反应。 这使得可以延长加热器的寿命。
    • 8. 发明授权
    • Vapor phase growth apparatus and vapor phase growth method
    • 气相生长装置和气相生长法
    • US07837794B2
    • 2010-11-23
    • US12053657
    • 2008-03-24
    • Hideki ItoShinichi Mitani
    • Hideki ItoShinichi Mitani
    • C30B21/02
    • C30B25/10C23C16/4586C30B35/00Y10S117/90Y10T117/10Y10T117/1004Y10T117/1008
    • A vapor phase growth apparatus and a vapor phase growth method improve the uniformity of film formed are provided. The vapor phase growth apparatus includes a chamber, a rotatable holder having a susceptor, an internal heater and an external heater which are arranged in the holder and heat the wafer from the bottom surface, an gas-pipe which is arranged to face the internal heater and sprays a cooling gas, and a temperature measuring unit which is arranged outside the chamber and measures the surface temperature of the wafer. In this manner, a position of a singular point of temperature which is an overheated portion generated on the wafer can be recognized. The singular point of temperature is locally cooled to make it possible to improve the uniformity of a temperature distribution in plane of the wafer.
    • 提供了一种提高膜形成均匀性的气相生长装置和气相生长方法。 气相生长装置包括:室,具有基座的可旋转保持器,内部加热器和外部加热器,其布置在保持器中并从底表面加热晶片;气体管,其布置成面对内部加热器 并喷射冷却气体,以及温度测量单元,其布置在室外并测量晶片的表面温度。 以这种方式,可以识别在晶片上产生的过热部分的单个温度点的位置。 温度的单个点被局部冷却,从而可以提高晶片的平面内的温度分布的均匀性。
    • 9. 发明授权
    • Pigment compositions, colored compositions making use of the pigment compositions, and color filters
    • 颜料组合物,使用颜料组合物的着色组合物和滤色器
    • US07828891B2
    • 2010-11-09
    • US12592009
    • 2009-11-18
    • Ryo HoshinoHideki ItoKazuhiko KanekoKazutaka AokiShotoku Takami
    • Ryo HoshinoHideki ItoKazuhiko KanekoKazutaka AokiShotoku Takami
    • C09B67/20
    • C09B67/0041C09B67/006C09B67/0086G03F7/0007
    • Pigment compositions each contain an organic pigment and at least one compound selected from compounds represented by the following formula (II), respectively: A-N═N—CH(COCH3)—CONH-E, B—N═N—CH(COCH3)—CONH-E or C—N═N—CH(COCH3)—CONH-E, wherein A represents a substituted or unsubstituted phenyl group, B represents a substituted or unsubstituted β-naphthyl group, C represents a substituted or unsubstituted α-anthraquinonyl group, D represents a particular substituted aromatic group, and E represents a substituted or unsubstituted phenyl group, with a proviso that the compounds each have at least one substituent represented by —COOM or —SO3M in which M represents a hydrogen atom, metal atom, ammonium group, organic amine group or quaternary ammonium group. Colored compositions making use of the pigment compositions and color filters making use of the colored compositions are also disclosed.
    • 颜料组合物各自含有有机颜料和选自下式(II)表示的化合物中的至少一种化合物:AN = N-CH(COCH 3)-CONH-E,B-N = N-CH(COCH 3) - CONH-E或C-N = N-CH(COCH 3)-CONH-E,其中A表示取代或未取代的苯基,B表示取代或未取代的芳基 - 萘基,C表示取代或未取代的α-蒽醌基 基团,D表示特定取代的芳族基团,E表示取代或未取代的苯基,条件是该化合物各自具有至少一个由-COOM或-SO 3 M表示的取代基,其中M表示氢原子,金属原子, 铵基,有机胺基或季铵基。 还公开了利用颜料组合物和使用着色组合物的滤色器的有色组合物。