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1. 发明申请

US20120048180A1 FILM-FORMING MANUFACTURING APPARATUS AND METHOD 审中-公开
标题翻译：电影制作装置和方法
公开(公告)号：US20120048180A1
公开(公告)日：2012-03-01
申请号：US13196309
申请日：2011-08-02
申请人： Hideki Ito , Toshiro Tsumori , Kunihiko Suzuki
发明人： Hideki Ito , Toshiro Tsumori , Kunihiko Suzuki
IPC分类号： C30B25/10 , C23C16/46
CPC分类号： C23C16/325 , C23C16/455 , C23C16/45519 , C23C16/45557 , C23C16/458 , C23C16/46 , C30B25/10
摘要： It is an object of the present invention to provide a film-forming apparatus and a film-forming method that can prolong the lifetime of heaters used under high temperature conditions in an epitaxial growth technique. An inert gas discharge portion supplies an inert gas into the space containing the heater, gas is then discharged through the gas discharge portion without influence on the semiconductor substrate during film formation. It is therefore possible to prevent the reaction gas entering into the space containing the high-temperature heaters. This makes it possible to prevent a reaction between hydrogen gas contained in the reaction gas and SiC constituting the heaters. Therefore, it is possible to prevent carbon used as a base material of the heaters from being exposed due to the decomposition of SiC and then reacting with hydrogen gas. This makes it possible to prolong the lifetime of the heaters.
摘要翻译：本发明的目的是提供一种能够延长在外延生长技术中在高温条件下使用的加热器的寿命的成膜装置和成膜方法。惰性气体排出部分将惰性气体供入包含加热器的空间中，然后气体在成膜期间通过气体排出部分排出，而不影响半导体基板。因此，可以防止反应气体进入含有高温加热器的空间。这使得可以防止反应气体中所含的氢气与构成加热器的SiC反应。因此，可以防止由于SiC的分解而使用作为加热器的基材的碳然后与氢气反应。这使得可以延长加热器的寿命。

2. 发明申请

US20110265710A1 FILM FORMING APPARATUS AND METHOD 审中-公开
标题翻译：电影形成装置和方法
公开(公告)号：US20110265710A1
公开(公告)日：2011-11-03
申请号：US13096349
申请日：2011-04-28
申请人： Kunihiko Suzuki , Shinichi Mitani , Toshiro Tsumori
发明人： Kunihiko Suzuki , Shinichi Mitani , Toshiro Tsumori
IPC分类号： C30B23/06
CPC分类号： C30B29/36 , C23C16/45519 , C23C16/46 , C23C16/52 , C30B25/16
摘要： A film-forming apparatus includes a chamber in which a substrate is to be placed, a reaction gas supply portion that supplies a reaction gas into the chamber, a heater that heats the substrate, a radiation thermometer that is provided outside the chamber to measure the temperature of the substrate by receiving radiant light from the substrate, and a tubular member that protects an optical path of radiant light between the substrate and the radiation thermometer. An inert gas is supplied from an inert gas supply portion to the tubular member. The tubular member preferably has an inner peripheral surface and an outer peripheral surface made of a material having a lower emissivity than the inner peripheral surface.
摘要翻译：一种成膜设备包括：一个其中放置一个基底的腔室;一个反应气体供应部分，其将反应气体提供到该腔室;一个加热器，加热该基底;一个放射温度计，通过从衬底接收辐射光，衬底的温度以及保护衬底和辐射温度计之间的辐射光的光路的管状构件。从惰性气体供给部向管状部件供给惰性气体。管状构件优选具有由比内周面更低的发射率的材料制成的内周面和外周面。

3. 发明授权

US09139933B2 Semiconductor substrate manufacturing apparatus 有权
标题翻译：半导体基板制造装置
公开(公告)号：US09139933B2
公开(公告)日：2015-09-22
申请号：US13187904
申请日：2011-07-21
申请人： Toshiro Tsumori , Shinichi Mitani , Kunihiko Suzuki
发明人： Toshiro Tsumori , Shinichi Mitani , Kunihiko Suzuki
IPC分类号： C23C16/22 , C23C16/32 , C23C16/46 , C23C16/52 , C23F1/00 , H01L21/306 , C30B25/12 , C23C14/02 , C23C16/02 , C23C16/44 , C30B29/36 , C30B33/12
CPC分类号： C30B25/12 , C23C14/021 , C23C16/0227 , C23C16/22 , C23C16/32 , C23C16/325 , C23C16/4405 , C23C16/46 , C30B29/36 , C30B33/12
摘要： According to this embodiment, a semiconductor substrate manufacturing apparatus for epitaxial growth in which gases are supplied to a wafer placed on a susceptor and in which a heater is provided on the back surface of the susceptor. As a result of this epitaxial growth, SiC film is deposited onto the susceptor in the film-forming chamber. The susceptor is then moved into a separate chamber and the SiC film deposited on the susceptor during the epitaxial process is removed. After removal of SiC film, regeneration of the SiC film of the susceptor occurs. This semiconductor substrate manufacturing apparatus makes it possible to remove film deposited on a susceptor during epitaxial growth that would otherwise limit manufacturing yield.
摘要翻译：根据本实施方式，将用于外延生长的半导体衬底制造装置供给到放置在基座上的晶片，并且在基座的背面设置有加热器。作为这种外延生长的结果，SiC膜沉积在成膜室中的基座上。然后将基座移动到单独的室中，并且在外延过程中沉积在基座上的SiC膜被去除。在去除SiC膜之后，发生感受器的SiC膜的再生。该半导体衬底制造装置使得可以在外延生长期间去除沉积在基座上的膜，否则会限制制造成品率。

4. 发明授权

US5208133A Photosensitive resin composition 失效
标题翻译：感光树脂组合物
公开(公告)号：US5208133A
公开(公告)日：1993-05-04
申请号：US700469
申请日：1991-05-15
申请人： Toshiro Tsumori
发明人： Toshiro Tsumori
IPC分类号： G03F7/004 , G03F7/038 , H01L21/027 , H01L21/30
CPC分类号： G03F7/0045 , G03F7/038 , Y10S430/146
摘要： A photosensitive resin composition, which is a mixture of a base resin, an acid cross-linking agent and a photoreactive acid catalyst generator, is disclosed. The photoreactive acid catalyst generator contains tetrakis-1,2,4,5-(polyhalomethyl)benzene or tris(polyhalomethyl)benzene. The composition is a so-called three-component chemically amplified photoresist. When irradiated with an excimer laser light, the photoreactive acid generator is decomposed to yield a Lewis acid catalyst, while also yielding radicals, the photoreactive acid generator acting itself as an acid-linking auxiliary to improve the sensitivity of the photosensitive resin composition significantly. It becomes possible in this manner to form a fine resist pattern with superior resolution in the excimer laser lithography. On the other hand, the sensitivity dependency of the base resin or light transmittance may be lowered to increase the degree of freedom in material selection and designing.
摘要翻译：公开了作为基础树脂，酸性交联剂和光反应性催化剂发生剂的混合物的感光性树脂组合物。光反应性酸催化剂发生器含有四 - 1,2,4,5-（多卤甲基）苯或三（多卤甲基）苯。该组合物是所谓的三组分化学放大光致抗蚀剂。当用准分子激光照射时，光反应性酸发生剂分解产生路易斯酸催化剂，同时也产生自由基，光反应酸发生器作为酸连接助剂，显着提高感光性树脂组合物的敏感性。以这种方式可以在准分子激光光刻中形成具有优异分辨率的精细抗蚀剂图案。另一方面，可以降低基础树脂的灵敏度依赖性或透光率，从而提高材料选择和设计的自由度。

5. 发明授权

US4113582A Method of adjusting a fused salt electrolytic bath 失效
标题翻译：调整熔盐电解槽的方法
公开(公告)号：US4113582A
公开(公告)日：1978-09-12
申请号：US802487
申请日：1977-06-01
申请人： Shin-ichi Tokumoto , Eiji Tanaka , Tatsuo Kikuchi , Kenji Ogisu , Toshiro Tsumori
发明人： Shin-ichi Tokumoto , Eiji Tanaka , Tatsuo Kikuchi , Kenji Ogisu , Toshiro Tsumori
IPC分类号： C25C3/26 , C25C3/00 , C25C3/28 , C25D3/66
CPC分类号： C25C3/28 , C25C3/00 , C25D3/66
摘要： A high valency salt, such as TiCl.sub.4 is reduced to a lower valency salt, such as TiCl.sub.2 and/or TiCl.sub.3 within a fused salt electrolytic bath via electrolysis so that an improved electrodeposition of a desired metal or alloy, such as Ti, occurs, from such adjusted bath. The process generally comprises adding a higher valency salt of a desired metal or alloy to a fused salt electrolytic bath, reducing the higher valency salt on a cathode electrode to a lower valency salt, removing the so-produced lower valency salt from the electrode surface and maintaining a predetermined amount of the lower valency salt within the electrolytic bath. Electrodeposition of a desired metal or alloy may then take place from such electrolytic bath containing a so-adjusted amount of the lower valency salt.
摘要翻译：通过电解将高价盐如TiCl 4还原成熔融盐电解槽内的较低价态的盐，例如TiCl 2和/或TiCl 3，以便发生所需金属或合金如Ti的电沉积，从这样调整浴。该方法通常包括向熔融盐电解浴中加入所需金属或合金的较高价盐，将阴极上的较高价盐还原成低价盐，从电极表面除去如此制备的较低价盐，在电解浴中保持预定量的较低价盐。然后可以从含有如此调节量的较低价盐的电解浴中进行所需金属或合金的电沉积。

6. 发明授权

US5593799A Exposure mask 失效
标题翻译：曝光面膜
公开(公告)号：US5593799A
公开(公告)日：1997-01-14
申请号：US603943
申请日：1990-10-26
申请人： Toshiro Tsumori , Hideo Shimizu
发明人： Toshiro Tsumori , Hideo Shimizu
IPC分类号： G03F1/30 , G03F1/68 , H01L21/027 , H01L21/30 , G03F9/00
CPC分类号： G03F1/26 , G03F1/30
摘要： An exposure mask having phase shifting films of a predetermined thickness composed of a material transparent to the wavelength of exposure light and formed on a substrate transparent to such wavelength for causing a desired phase shift, wherein the phase shifting films are so patterned as to principally have arrangement of repeated patterns. Relative to the rule width L of the repeated patterns projected onto a work member to be exposed, a pattern having a rule width of 2 L/m is formed, in which m (.ltoreq.1) is a size reduction magnification in the use of a reduced-size projection exposer. The exposure mask is adapted for use in producing a diffraction grating as well. The mask is easily manufacturable without the necessity of any intricate process such as a positioned exposure, hence minimizing the number of required steps in manufacture while achieving a further fine work with an enhanced resolution higher than the known value.
摘要翻译：一种具有预定厚度的相移膜的曝光掩模，由相对于曝光光的波长透明的材料构成，并形成在对这种波长透明的基板上，用于引起所需的相移，其中相移膜被图案化以主要具有安排重复模式。相对于投影到要曝光的工件上的重复图案的规则宽度L，形成规则宽度为2L / m的图案，其中m（<= 1）是使用中的尺寸减小倍率的小尺寸投影曝光机。曝光掩模也适用于制作衍射光栅。掩模可以容易地制造，而不需要诸如定位曝光的复杂工艺，因此在制造中最小化所需步骤的数量，同时以更高的分辨率获得更高的精度，同时提高分辨率。

7. 发明授权

US5324623A Microlens forming method 失效
标题翻译：微透镜成型方法
公开(公告)号：US5324623A
公开(公告)日：1994-06-28
申请号：US892985
申请日：1992-06-03
申请人： Toshiro Tsumori
发明人： Toshiro Tsumori
IPC分类号： H01L27/14 , G02B3/00 , G03F7/00
CPC分类号： G02B3/0018 , G03F7/0005 , G03F7/001
摘要： A method of forming a microlens made of a thermoplastic resin on a solid-state imaging device, including the steps of forming a resist pattern having an opening as a microlens forming portion on the solid-state imaging device; filling the opening with the thermoplastic resin; removing the resist pattern; and thermally deforming the thermoplastic resin on the opening. Accordingly, a microlens having a desired shape can be formed with a fine lens pattern of 0.5 .mu.m or less uniformly and highly accurately.
摘要翻译：一种在固态成像装置上形成由热塑性树脂制成的微透镜的方法，包括以下步骤：在固态成像装置上形成具有作为微透镜形成部分的开口的抗蚀剂图案; 用热塑性树脂填充开口; 去除抗蚀剂图案; 并将热塑性树脂热变形在开口上。因此，能够以0.5μm以下的精细透镜图案均匀且高精度地形成具有期望形状的微透镜。

8. 发明授权

US4082628A Method of adjusting the hardness of a titanium metal 失效
标题翻译：调整钛金属硬度的方法
公开(公告)号：US4082628A
公开(公告)日：1978-04-04
申请号：US690058
申请日：1976-05-26
申请人： Shin-ichi Tokumoto , Eiji Tanaka , Tatsuo Kikuchi , Kenji Ogisu , Toshiro Tsumori
发明人： Shin-ichi Tokumoto , Eiji Tanaka , Tatsuo Kikuchi , Kenji Ogisu , Toshiro Tsumori
IPC分类号： C25D3/66 , C25C3/26 , C25C3/28
CPC分类号： C25C3/28
摘要： In the electrodeposition of titanium metal from an electrolyte containing one or more dissolved or fused titanium chlorides and other dissolved or fused chloride salts, such as, MgCl.sub.2,CaCl.sub.2,NaCl, and the like; the hardness of the electrodeposited titanium is adjusted by adding to the electrolyte one or more oxides, such as titanium oxide and oxides of alkaline and alkaline-earth metals, and/or one or more fluorides of alkaline and alkaline-earth metals.
摘要翻译：调整钛金属硬度的方法在由含有一种或多种溶解或熔融的氯化钛和其它溶解或熔融氯化物盐（例如MgCl 2，CaCl 2，NaCl等）的电解质的电解沉积钛金属中，硬度通过向电解质中添加一种或多种氧化物，如碱金属和碱土金属的氧化物和氧化物，和/或一种或多种碱金属和碱土金属的氟化物来调节电沉积钛。

9. 发明授权

US4113581A Electrodeposition process 失效
标题翻译：电沉积工艺
公开(公告)号：US4113581A
公开(公告)日：1978-09-12
申请号：US801640
申请日：1977-05-31
申请人： Shin-Ichi Tokumoto , Eiji Tanaka , Tatsuo Kikuchi , Kenji Ogisu , Toshiro Tsumori
发明人： Shin-Ichi Tokumoto , Eiji Tanaka , Tatsuo Kikuchi , Kenji Ogisu , Toshiro Tsumori
IPC分类号： C25D15/02 , C25C3/00 , C25C3/28 , C25C5/04 , C25D3/66
CPC分类号： C25C5/04 , C25D3/66
摘要： An electroposition process wherein solid metallic particles are produced in a fused salt electrolytic bath and dispersed therein to electrodeposit a metal or alloy thereof on a cathode so that the surface of the deposit is maintained smooth and flat. In order to produce particles of a desired metal or alloy, an auxiliary electrolytic means may be provided within an electrolytic cell so that such particles are generated in situ within the fused bath of such cell.
摘要翻译：一种电镀方法，其中固体金属颗粒在熔盐电解浴中产生并分散在其中以将金属或其合金电沉积在阴极上，使得沉积物的表面保持平滑和平坦。为了产生期望的金属或合金的颗粒，可以在电解池内提供辅助电解装置，使得这种颗粒在该电池的熔池内就地产生。

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