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    • 3. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US5491709A
    • 1996-02-13
    • US106700
    • 1993-08-16
    • Yasuji SekoHiromi OtomaNobuaki UekiHideki FukunagaHideo NakayamaKiichi UeyanagiYasuhiro Shiraki
    • Yasuji SekoHiromi OtomaNobuaki UekiHideki FukunagaHideo NakayamaKiichi UeyanagiYasuhiro Shiraki
    • H01S5/00H01S5/042H01S5/20H01S5/32H01S5/323H01S5/34H01S5/343H01S3/19
    • B82Y20/00H01S5/32325H01S5/34326H01S5/2009H01S5/3211H01S5/3406H01S5/3407
    • In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof. This makes it possible to reduce the oscillation threshold value current density of the laser as well as to improve the temperature characteristic of the laser.
    • 在根据本发明的半导体激光器件中,包覆层包括第一覆盖层,其每一个具有比有源层更大的带隙,并且具有0.003至0.3μm的厚度,以及第二覆盖层具有 比有源层​​低的折射率,并且第一包层分别设置成比第二包层更靠近有源层。 在该结构中,第一覆盖层将载流子限制在有源层中,而第二覆盖层将光限制在有源层中。 由于每个第一包层由薄膜形成,所以载流子由于其隧道现象而难以从有源层向外移动,并且即使其晶格常数稍微不同,第一覆层可以是晶格 与底物匹配。 为此,可以选择第二包层的材料而不考虑其带隙的尺寸。 这使得可以减小激光器的振荡阈值电流密度以及提高激光器的温度特性。
    • 5. 发明授权
    • Method of manufacturing a semiconductor laser device
    • 制造半导体激光器件的方法
    • US5394425A
    • 1995-02-28
    • US201342
    • 1994-02-24
    • Hideki FukunagaNobuaki UekiHiromi OtomaHideo Nakayama
    • Hideki FukunagaNobuaki UekiHiromi OtomaHideo Nakayama
    • H01S5/00H01S5/20H01S5/22H01S5/223H01S3/19
    • H01S5/22H01S5/20H01S5/2059H01S5/2226H01S5/223
    • The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including at least a first clad layer; an active layer interposed between a pair of optical waveguide layers, and a second clad layer. In the present manufacturing method, a first impurity diffusion source film is applied on top of the semiconductor layers, an insulation film is applied on top of the first impurity diffusion source film, two layers consisting of the first impurity diffusion source film and insulation film are removed respectively into a stripe shape except for the areas of the semiconductor layers in which impurities are to be diffused, a diffusion protect film to be etched selectively with respect to the insulation film is formed on the surfaces of the semiconductor layers and two layers, an impurity is thermally diffused from the first impurity diffusion source film, a diffusion protect film is etched selectively with respect to the insulation film, and a second impurity is diffused with the insulation film as a mask.
    • 该方法适用于半导体激光器件的制造,该半导体激光器件包括半导体衬底和在半导体衬底上依次堆叠在一起的多个半导体层,半导体层至少包括第一覆盖层; 介于一对光波导层之间的有源层和第二覆层。 在本制造方法中,将第一杂质扩散源膜施加在半导体层的顶部,在第一杂质扩散源膜的顶部施加绝缘膜,由第一杂质扩散源膜和绝缘膜构成的两层 除去杂质要扩散的半导体层的区域以外的条纹状,在半导体层和两层的表面上形成相对于绝缘膜选择性地蚀刻的扩散保护膜, 杂质从第一杂质扩散源膜热扩散,相对于绝缘膜选择性地蚀刻扩散保护膜,第二杂质以绝缘膜作为掩模扩散。
    • 9. 发明授权
    • Surface emitting semiconductor laser
    • 表面发射半导体激光器
    • US06650683B2
    • 2003-11-18
    • US10228217
    • 2002-08-27
    • Nobuaki UekiAkira SakamotoMasahiro YoshikawaHideo NakayamaHiromi Otoma
    • Nobuaki UekiAkira SakamotoMasahiro YoshikawaHideo NakayamaHiromi Otoma
    • H01S5183
    • H01S5/18394H01S5/0421H01S5/0425H01S5/18311H01S5/18338H01S5/18388H01S2301/166H01S2301/18
    • The present invention provides a surface emitting semiconductor laser, comprising: a semiconductor substrate having sequentially layered thereon a lower multi-layer mirror, an active layer region, and an upper multi-layer mirror that, together with the lower multi-layer mirror, contributes to the formation of a cavity; an upper electrode disposed on an upper layer of the upper multi-layer mirror and provided with an aperture that forms an emission region of a laser beam generated at the active layer region; and a current confinement portion disposed between the upper electrode and the lower multi-layer mirror and provided with an aperture that forms a current path; wherein an aperture diameter of the upper electrode and an aperture diameter of the current confinement portion are determined such that a difference between an optical loss of the cavity in a higher-order lateral mode of the laser beam and an optical loss of the cavity in a fundamental lateral mode of the laser beam becomes a value in the vicinity of a maximum value, and the higher-order lateral mode is suppressed, and at least one of the aperture formed in the upper electrode and the aperture of the current confinement portion is formed into a two-fold symmetrical configuration having long and short axes with respect to arbitrary two axial directions orthogonal to each other in a plane.
    • 本发明提供一种表面发射半导体激光器,包括:半导体衬底,其上依次层叠有下层多层反射镜,有源层区域和上层多层反射镜,其与下层多层反射镜一起贡献 形成一个空腔; 上电极,其设置在所述上​​多层反射镜的上层上,并且设置有形成在所述有源层区域处产生的激光束的发射区域的孔; 以及电流限制部分,其设置在所述上​​电极和所述下多层反射镜之间,并且设置有形成电流路径的孔; 其中确定上限电极的孔径和电流限制部分的孔径直径,使得激光束的高阶横向模式中的空腔的光学损耗与腔室的光损耗之差 激光束的基本横向模式变为最大值附近的值,并且抑制高阶横向模式,并且形成在上电极中形成的孔和电流限制部的孔中的至少一个 成为具有相对于平面中彼此正交的任意两个轴向方向的长轴和短轴的双重对称构型。
    • 10. 发明授权
    • Surface emitting semiconductor laser
    • 表面发射半导体激光器
    • US06529541B1
    • 2003-03-04
    • US09714980
    • 2000-11-20
    • Nobuaki UekiAkira SakamotoMasahiro YoshikawaHideo NakayamaHiromi Otoma
    • Nobuaki UekiAkira SakamotoMasahiro YoshikawaHideo NakayamaHiromi Otoma
    • H01S5183
    • H01S5/18394H01S5/0425H01S5/18311H01S5/18355H01S5/18375H01S5/18377H01S5/18388H01S2301/166
    • A surface emitting semiconductor laser that is easy to manufacture and has a high-intensity fundamental lateral mode optical output power. The surface emitting semiconductor laser has a semiconductor substrate on which are sequentially laminated a lower n-type DBR layer, an active layer region, an upper p-type DBR layer, a p-side electrode that is an upper layer of the upper n-type DBR layer and functions as an upper electrode provided with an aperture that forms an emission region for a laser beam, and a current confinement portion formed by oxidization. On the basis of the reflectance of a cavity in a region corresponding to the p-side electrode, a metal aperture diameter (Wmetal) of the aperture and a diameter (Woxide) of the current confinement portion are determined such that the difference between an optical loss of a cavity in a higher-order lateral mode of a laser beam and an optical loss of a cavity in a fundamental lateral mode of a laser beam becomes larger.
    • 一种易于制造且具有高强度基本横向模式光输出功率的表面发射半导体激光器。 表面发射半导体激光器具有半导体衬底,其上依次层叠下n型DBR层,有源层区域,上p型DBR层,作为上层n型DBR层的上层的p侧电极, 型的DBR层,并且作为设置有形成激光束的发射区域的孔的上电极和通过氧化形成的电流限制部分起作用。 基于对应于p侧电极的区域中的空腔的反射率,确定孔的金属孔直径(Wmetal)和电流限制部分的直径(Woxide),使得光学 在激光束的高阶横向模式中的腔的损失和激光束的基本横向模式中的空腔的光学损耗变大。