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    • 3. 发明授权
    • Method of manufacturing a semiconductor laser device
    • 制造半导体激光器件的方法
    • US5394425A
    • 1995-02-28
    • US201342
    • 1994-02-24
    • Hideki FukunagaNobuaki UekiHiromi OtomaHideo Nakayama
    • Hideki FukunagaNobuaki UekiHiromi OtomaHideo Nakayama
    • H01S5/00H01S5/20H01S5/22H01S5/223H01S3/19
    • H01S5/22H01S5/20H01S5/2059H01S5/2226H01S5/223
    • The method applies to manufacture of a semiconductor laser device which comprises a semiconductor substrate and a plurality of semiconductor layers piled sequentially one on top of another on the semiconductor substrate, the semiconductor layers including at least a first clad layer; an active layer interposed between a pair of optical waveguide layers, and a second clad layer. In the present manufacturing method, a first impurity diffusion source film is applied on top of the semiconductor layers, an insulation film is applied on top of the first impurity diffusion source film, two layers consisting of the first impurity diffusion source film and insulation film are removed respectively into a stripe shape except for the areas of the semiconductor layers in which impurities are to be diffused, a diffusion protect film to be etched selectively with respect to the insulation film is formed on the surfaces of the semiconductor layers and two layers, an impurity is thermally diffused from the first impurity diffusion source film, a diffusion protect film is etched selectively with respect to the insulation film, and a second impurity is diffused with the insulation film as a mask.
    • 该方法适用于半导体激光器件的制造,该半导体激光器件包括半导体衬底和在半导体衬底上依次堆叠在一起的多个半导体层,半导体层至少包括第一覆盖层; 介于一对光波导层之间的有源层和第二覆层。 在本制造方法中,将第一杂质扩散源膜施加在半导体层的顶部,在第一杂质扩散源膜的顶部施加绝缘膜,由第一杂质扩散源膜和绝缘膜构成的两层 除去杂质要扩散的半导体层的区域以外的条纹状,在半导体层和两层的表面上形成相对于绝缘膜选择性地蚀刻的扩散保护膜, 杂质从第一杂质扩散源膜热扩散,相对于绝缘膜选择性地蚀刻扩散保护膜,第二杂质以绝缘膜作为掩模扩散。
    • 5. 发明授权
    • Semiconductor laser device
    • 半导体激光器件
    • US5491709A
    • 1996-02-13
    • US106700
    • 1993-08-16
    • Yasuji SekoHiromi OtomaNobuaki UekiHideki FukunagaHideo NakayamaKiichi UeyanagiYasuhiro Shiraki
    • Yasuji SekoHiromi OtomaNobuaki UekiHideki FukunagaHideo NakayamaKiichi UeyanagiYasuhiro Shiraki
    • H01S5/00H01S5/042H01S5/20H01S5/32H01S5/323H01S5/34H01S5/343H01S3/19
    • B82Y20/00H01S5/32325H01S5/34326H01S5/2009H01S5/3211H01S5/3406H01S5/3407
    • In a semiconductor laser device according to the invention, a clad layer includes first clad layers, each of which has a greater band gap than an active layer and has a thickness of 0.003 to 0.3 .mu.m, and second clad layers each of which has a lower refractive index than the active layer, and the first clad layers are disposed nearer to the active layer than the second clad layers, respectively. In this structure, the first clad layers confine carriers in the active layer while the second clad layers confine the light in the active layer. Since each of the first clad layers is formed of a thin film, the carriers are hard to move outwardly from the active layer due to the tunnel phenomenon thereof and, even if the lattice constant thereof is slightly different, the first clad layer can be lattice matched to a substrate. For this reason, the materials of the second clad layers can be selected without taking into consideration the size of the band gap thereof. This makes it possible to reduce the oscillation threshold value current density of the laser as well as to improve the temperature characteristic of the laser.
    • 在根据本发明的半导体激光器件中,包覆层包括第一覆盖层,其每一个具有比有源层更大的带隙,并且具有0.003至0.3μm的厚度,以及第二覆盖层具有 比有源层​​低的折射率,并且第一包层分别设置成比第二包层更靠近有源层。 在该结构中,第一覆盖层将载流子限制在有源层中,而第二覆盖层将光限制在有源层中。 由于每个第一包层由薄膜形成,所以载流子由于其隧道现象而难以从有源层向外移动,并且即使其晶格常数稍微不同,第一覆层可以是晶格 与底物匹配。 为此,可以选择第二包层的材料而不考虑其带隙的尺寸。 这使得可以减小激光器的振荡阈值电流密度以及提高激光器的温度特性。