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1. 发明申请

US20060068588A1 Low-pressure deposition of ruthenium and rhenium metal layers from metal carbonyl precursors 审中-公开
标题翻译：从金属羰基前体中低压沉积钌和铼金属层
公开(公告)号：US20060068588A1
公开(公告)日：2006-03-30
申请号：US10953466
申请日：2004-09-30
申请人： Hideaki Yamasaki , Kenji Suzuki , Emmanuel Guidotti , Enrico Mosca , Gert Leusink , Yumiko Kawano , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Kenji Suzuki , Emmanuel Guidotti , Enrico Mosca , Gert Leusink , Yumiko Kawano , Fenton McFeely , Sandra Malhotra
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76846 , H01L21/76873
摘要： A method for depositing Ru and Re metal layers on substrates with high deposition rates, low particulate contamination, and good step coverage on patterned substrates is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas and a metal precursor selected from the group consisting of a ruthenium-carbonyl precursor and a rhenium-carbonyl precursor. The method further includes depositing a Ru or Re metal layer on the substrate by a thermal chemical vapor deposition process at a process chamber pressure less than about 20 mTorr.
摘要翻译：提出了一种用于在具有高沉积速率，低颗粒污染和在图案化衬底上良好的阶梯覆盖的衬底上沉积Ru和Re金属层的方法。该方法包括在处理室中提供衬底，在处理室中引入工艺气体，其中处理气体包括载气和选自羰基钌羰基前体和铼羰基前体的金属前体。该方法还包括通过热化学气相沉积工艺在小于约20mTorr的处理室压力下在衬底上沉积Ru或Re金属层。

2. 发明申请

US20060068098A1 Deposition of ruthenium metal layers in a thermal chemical vapor deposition process 审中-公开
标题翻译：在热化学气相沉积工艺中沉积钌金属层
公开(公告)号：US20060068098A1
公开(公告)日：2006-03-30
申请号：US10949803
申请日：2004-09-27
申请人： Hideaki Yamasaki , Yumiko Kawano , Gert Leusink
发明人： Hideaki Yamasaki , Yumiko Kawano , Gert Leusink
IPC分类号： C23C16/00
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76873
摘要： A method for depositing a Ru metal layer on a substrate is presented. The method includes providing a substrate in a process chamber, introducing a process gas in the process chamber in which the process gas comprises a carrier gas, a ruthenium-carbonyl precursor, and hydrogen. The method further includes depositing a Ru metal layer on the substrate by a thermal chemical vapor deposition process. In one embodiment of the invention, the ruthenium-carbonyl precursor can contain Ru3(CO)12. and the Ru metal layer can be deposited at a substrate temperature resulting in the Ru metal layer having predominantly Ru(002) crystallographic orientation.
摘要翻译：介绍了一种在衬底上沉积Ru金属层的方法。该方法包括在处理室中提供衬底，在工艺气体中引入工艺气体，其中工艺气体包括载气，羰基钌前体和氢。该方法还包括通过热化学气相沉积工艺在基底上沉积Ru金属层。在本发明的一个实施方案中，羰基钌前驱体可含有Ru 3（CO）12。并且Ru金属层可以在衬底温度下沉积，导致Ru金属层主要具有Ru（002）晶体取向。

3. 发明申请

US20060068097A1 METHOD FOR FORMING A PASSIVATED METAL LAYER 有权
标题翻译：形成钝化金属层的方法
公开(公告)号：US20060068097A1
公开(公告)日：2006-03-30
申请号：US10711717
申请日：2004-09-30
申请人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Paul Jamison
发明人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Paul Jamison
IPC分类号： C23C16/00
CPC分类号： H01L21/28556 , C23C16/16 , H01L21/28079 , H01L21/28247 , H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L29/517
摘要： A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.
摘要翻译：用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。该方法包括在处理室中提供衬底，将衬底暴露于含有铼 - 羰基前体的工艺气体，以在化学气相沉积工艺中在衬底上沉积铼金属层，以及在铼金属层上形成钝化层从而抑制铼金属表面上含铼结核的氧诱导生长。

4. 发明申请

US20050079708A1 Method of depositing metal layers from metal-carbonyl precursors 有权
标题翻译：从金属羰基前体沉积金属层的方法
公开(公告)号：US20050079708A1
公开(公告)日：2005-04-14
申请号：US10673648
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76841
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.
摘要翻译：一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12， Re 2（CO）10，Cr（CO）6和Ru 3（CO）12）。在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的基底温度和约200mTorr的室压下从包含W（CO）6前体的工艺气体中沉积W层。

5. 发明申请

US20050069632A1 Method of forming a metal layer using an intermittent precursor gas flow process 有权
公开(公告)号：US20050069632A1
公开(公告)日：2005-03-31
申请号：US10673646
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/04 , C23C16/16 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , B05D5/12 , H01L21/4763
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/16 , C23C16/4408 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

6. 发明申请

US20050227441A1 Method of forming a tantalum-containing gate electrode structure 失效
标题翻译：形成含钽栅电极结构的方法
公开(公告)号：US20050227441A1
公开(公告)日：2005-10-13
申请号：US10830804
申请日：2004-03-31
申请人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano , Gert Leusink , Fenton McFeely , John Yurkas , Vijay Narayanan
发明人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano , Gert Leusink , Fenton McFeely , John Yurkas , Vijay Narayanan
IPC分类号： H01L21/28 , H01L29/49 , H01L29/51 , H01L21/336 , C30B1/00 , H01L21/20 , H01L21/3205 , H01L21/36 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/28088 , H01L21/28194 , H01L29/4966 , H01L29/51 , H01L29/517
摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.
摘要翻译：一种用于形成含钽栅电极结构的方法，其通过在处理室中提供其上具有高k电介质层的衬底，并在热化学气相沉积工艺中通过暴露在高k电介质层上形成含钽层将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体，（CH 3）2））前体气体。在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

7. 发明申请

US20050070100A1 Low-pressure deposition of metal layers from metal-carbonyl precursors 有权
标题翻译：金属 - 羰基前驱体金属层的低压沉积
公开(公告)号：US20050070100A1
公开(公告)日：2005-03-31
申请号：US10673908
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , C23C16/44 , H01L21/285 , H01L21/44
CPC分类号： C23C16/16 , H01L21/28556
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.
摘要翻译：通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在本发明的一个实施方案中，金属羰基前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12，Re 2 （CO）10，Cr（CO）6和Ru 3（CO）12前体）。在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

8. 发明申请

US20050221002A1 Method for processing a substrate 有权
标题翻译：处理基板的方法
公开(公告)号：US20050221002A1
公开(公告)日：2005-10-06
申请号：US10814768
申请日：2004-03-31
申请人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , C23C16/458 , C23C16/00
CPC分类号： C23C16/4581 , C23C16/16
摘要： A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.
摘要翻译：一种在处理室中的陶瓷基板加热器上处理基板的方法。该方法包括在处理室中的陶瓷基板加热器上形成保护涂层，并对涂覆的基板加热器上的基板进行处理。该处理可以包括在被涂覆的陶瓷基板加热器上提供待处理的基板，通过将基板暴露于工艺气体，从处理室中移除经处理的基板，在基板上进行处理。

9. 发明授权

US07419702B2 Method for processing a substrate 有权
标题翻译：处理基板的方法
公开(公告)号：US07419702B2
公开(公告)日：2008-09-02
申请号：US10814768
申请日：2004-03-31
申请人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton R. McFeely , Sandra G. Malhotra
发明人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton R. McFeely , Sandra G. Malhotra
IPC分类号： C23C16/00 , B05D3/04
CPC分类号： C23C16/4581 , C23C16/16
摘要： A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.
摘要翻译：一种在处理室中的陶瓷基板加热器上处理基板的方法。该方法包括在处理室中的陶瓷基板加热器上形成保护涂层，并对涂覆的基板加热器上的基板进行处理。该处理可以包括在被涂覆的陶瓷基板加热器上提供待处理的基板，通过将基板暴露于工艺气体，从处理室中移除经处理的基板，在基板上进行处理。

10. 发明授权

US08029621B2 Raw material feeding device, film formation system and method for feeding gaseous raw material 有权
标题翻译：原料给料装置，成膜系统和气态原料供料方法
公开(公告)号：US08029621B2
公开(公告)日：2011-10-04
申请号：US12067714
申请日：2006-07-25
申请人： Hideaki Yamasaki , Yumiko Kawano
发明人： Hideaki Yamasaki , Yumiko Kawano
IPC分类号： C23C16/00
CPC分类号： C23C16/4481
摘要： A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side.
摘要翻译：将通过将固体原料升华形成的气态原料供给到成膜系统的原料供给装置包括：将固体原料保持在其中的原料容器，放置在容器第一侧的第一加热单元，放置在第二侧的第二加热单元，第一温度控制单元，用于进行控制第一和第二加热单元的第一过程，以使第一侧的温度高于第二侧的温度，从而使固体原料设置在第一侧的材料和第二温度控制单元，用于进行控制第一和第二加热单元的第二过程，以使第二侧的温度高于第一侧的温度，从而使设置的固体原料升华在第二边。

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