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1. 发明申请

US20060068097A1 METHOD FOR FORMING A PASSIVATED METAL LAYER 有权
标题翻译：形成钝化金属层的方法
公开(公告)号：US20060068097A1
公开(公告)日：2006-03-30
申请号：US10711717
申请日：2004-09-30
申请人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Paul Jamison
发明人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Paul Jamison
IPC分类号： C23C16/00
CPC分类号： H01L21/28556 , C23C16/16 , H01L21/28079 , H01L21/28247 , H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L29/517
摘要： A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.
摘要翻译：用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。该方法包括在处理室中提供衬底，将衬底暴露于含有铼 - 羰基前体的工艺气体，以在化学气相沉积工艺中在衬底上沉积铼金属层，以及在铼金属层上形成钝化层从而抑制铼金属表面上含铼结核的氧诱导生长。

2. 发明申请

US20050227441A1 Method of forming a tantalum-containing gate electrode structure 失效
标题翻译：形成含钽栅电极结构的方法
公开(公告)号：US20050227441A1
公开(公告)日：2005-10-13
申请号：US10830804
申请日：2004-03-31
申请人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano , Gert Leusink , Fenton McFeely , John Yurkas , Vijay Narayanan
发明人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano , Gert Leusink , Fenton McFeely , John Yurkas , Vijay Narayanan
IPC分类号： H01L21/28 , H01L29/49 , H01L29/51 , H01L21/336 , C30B1/00 , H01L21/20 , H01L21/3205 , H01L21/36 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/28088 , H01L21/28194 , H01L29/4966 , H01L29/51 , H01L29/517
摘要： A method for forming a tantalum-containing gate electrode structure by providing a substrate having a high-k dielectric layer thereon in a process chamber and forming a tantalum-containing layer on the high-k dielectric layer in a thermal chemical vapor deposition process by exposing the substrate to a process gas containing TAIMATA (Ta(N(CH3)2)3(NC(C2H5)(CH3)2)) precursor gas. In one embodiment of the invention, the tantalum-containing layer can include a TaSiN layer formed from a process gas containing TAIMATA precursor gas, a silicon containing gas, and optionally a nitrogen-containing gas. In another embodiment of the invention, a TaN layer is formed on the TaSiN layer. The TaN layer can be formed from a process gas containing TAIMATA precursor gas and optionally a nitrogen-containing gas. A computer readable medium executable by a processor to cause a processing system to perform the method and a processing system for forming a tantalum-containing gate electrode structure are also provided.
摘要翻译：一种用于形成含钽栅电极结构的方法，其通过在处理室中提供其上具有高k电介质层的衬底，并在热化学气相沉积工艺中通过暴露在高k电介质层上形成含钽层将衬底加工成含有TAIMATA（Ta（N（CH 3）2）3）（NC（C 2）2）的工艺气体，（CH 3）2））前体气体。在本发明的一个实施方案中，含钽层可以包括由含有TAIMATA前体气体，含硅气体和任选的含氮气体的工艺气体形成的TaSiN层。在本发明的另一实施例中，在TaSiN层上形成TaN层。 TaN层可以由含有TAIMATA前体气体和任选的含氮气体的工艺气体形成。还提供了可由处理器执行以使处理系统执行该方法的计算机可读介质和用于形成含钽栅电极结构的处理系统。

3. 发明申请

US20050221002A1 Method for processing a substrate 有权
标题翻译：处理基板的方法
公开(公告)号：US20050221002A1
公开(公告)日：2005-10-06
申请号：US10814768
申请日：2004-03-31
申请人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , C23C16/458 , C23C16/00
CPC分类号： C23C16/4581 , C23C16/16
摘要： A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.
摘要翻译：一种在处理室中的陶瓷基板加热器上处理基板的方法。该方法包括在处理室中的陶瓷基板加热器上形成保护涂层，并对涂覆的基板加热器上的基板进行处理。该处理可以包括在被涂覆的陶瓷基板加热器上提供待处理的基板，通过将基板暴露于工艺气体，从处理室中移除经处理的基板，在基板上进行处理。

4. 发明授权

US07189431B2 Method for forming a passivated metal layer 有权
标题翻译：形成钝化金属层的方法
公开(公告)号：US07189431B2
公开(公告)日：2007-03-13
申请号：US10711717
申请日：2004-09-30
申请人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano , Gert J. Leusink , Fenton R. McFeely , Paul Jamison
发明人： Hideaki Yamasaki , Kazuhito Nakamura , Yumiko Kawano , Gert J. Leusink , Fenton R. McFeely , Paul Jamison
IPC分类号： C23C16/16
CPC分类号： H01L21/28556 , C23C16/16 , H01L21/28079 , H01L21/28247 , H01L21/76843 , H01L21/7685 , H01L21/76856 , H01L29/517
摘要： A method for forming a passivated metal layer that preserves the properties and morphology of an underlying metal layer during subsequent exposure to oxygen-containing ambients. The method includes providing a substrate in a process chamber, exposing the substrate to a process gas containing a rhenium-carbonyl precursor to deposit a rhenium metal layer on the substrate in a chemical vapor deposition process, and forming a passivation layer on the rhenium metal layer to thereby inhibit oxygen-induced growth of rhenium-containing nodules on the rhenium metal surface.
摘要翻译：用于形成钝化金属层的方法，其在随后暴露于含氧环境期间保持下面的金属层的性质和形态。该方法包括在处理室中提供衬底，将衬底暴露于含有铼 - 羰基前体的工艺气体，以在化学气相沉积工艺中在衬底上沉积铼金属层，以及在铼金属层上形成钝化层从而抑制铼金属表面上含铼结核的氧诱导生长。

5. 发明授权

US07419702B2 Method for processing a substrate 有权
标题翻译：处理基板的方法
公开(公告)号：US07419702B2
公开(公告)日：2008-09-02
申请号：US10814768
申请日：2004-03-31
申请人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton R. McFeely , Sandra G. Malhotra
发明人： Kazuhito Nakamura , Cory Wajda , Enrico Mosca , Yumiko Kawano , Gert Leusink , Fenton R. McFeely , Sandra G. Malhotra
IPC分类号： C23C16/00 , B05D3/04
CPC分类号： C23C16/4581 , C23C16/16
摘要： A method for processing a substrate on a ceramic substrate heater in a process chamber. The method includes forming a protective coating on the ceramic substrate heater in the process chamber and processing a substrate on the coated substrate heater. The processing can include providing a substrate to be processed on the coated ceramic substrate heater, performing a process on the substrate by exposing the substrate to a process gas, and removing the processed substrate from the process chamber.
摘要翻译：一种在处理室中的陶瓷基板加热器上处理基板的方法。该方法包括在处理室中的陶瓷基板加热器上形成保护涂层，并对涂覆的基板加热器上的基板进行处理。该处理可以包括在被涂覆的陶瓷基板加热器上提供待处理的基板，通过将基板暴露于工艺气体，从处理室中移除经处理的基板，在基板上进行处理。

6. 发明申请

US20050250318A1 CVD tantalum compounds for FET gate electrodes 审中-公开
标题翻译：用于FET栅电极的CVD钽化合物
公开(公告)号：US20050250318A1
公开(公告)日：2005-11-10
申请号：US11180384
申请日：2005-07-13
申请人： Vijay Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
发明人： Vijay Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
IPC分类号： C23C16/34 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L29/10 , H01L29/49 , H01L29/772 , H01L29/78 , H01L21/3205 , H01L21/31 , H01L21/44 , H01L21/469 , H01L21/4763
CPC分类号： C23C16/34 , H01L21/28088 , H01L21/823828 , H01L29/4966 , H01L29/78
摘要： Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 mΩcm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.
摘要翻译：公开了Ta和N的化合物，潜在地包括其它元素，并且电阻率低于约20mOmegacm，并且N与Ta的元素比大于约0.9，用作场效应器件中的栅极材料。这种化合物的典型实施方案TaSiN在典型的CMOS处理温度下在含有介电层和高k电介质层的SiO 2 2上是稳定的，功函数接近n型Si的功函数。金属Ta-N化合物通过化学气相沉积方法使用烷基亚氨基三（二烷基酰氨基）Ta种，例如叔戊酰亚胺基三（二甲基酰氨基）Ta（TAIMATA））作为Ta前体沉积。沉积是共形的，允许将Ta-N金属化合物柔性引入CMOS加工流程。用TaN或TaSiN处理的器件显示出接近理想的特性。

7. 发明申请

US20050104142A1 CVD tantalum compounds for FET get electrodes 审中-公开
标题翻译：用于FET的CVD钽化合物获得电极
公开(公告)号：US20050104142A1
公开(公告)日：2005-05-19
申请号：US10712575
申请日：2003-11-13
申请人： Vijav Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
发明人： Vijav Narayanan , Fenton McFeely , Keith Milkove , John Yurkas , Matthew Copel , Paul Jamison , Roy Carruthers , Cyril Cabral , Edmund Sikorskii , Elizabeth Duch , Alessandro Callegari , Sufi Zafar , Kazuhito Nakamura
IPC分类号： C23C16/34 , H01L21/28 , H01L21/336 , H01L21/8234 , H01L21/8238 , H01L29/10 , H01L29/49 , H01L29/772 , H01L29/78 , H01L29/76
CPC分类号： C23C16/34 , H01L21/28088 , H01L21/823828 , H01L29/4966 , H01L29/78
摘要： Compounds of Ta and N, potentially including further elements, and with a resistivity below about 20 mΩcm and with the elemental ratio of N to Ta greater than about 0.9 are disclosed for use as gate materials in field effect devices. A representative embodiment of such compounds, TaSiN, is stable at typical CMOS processing temperatures on SiO2 containing dielectric layers and high-k dielectric layers, with a workfunction close to that of n-type Si. Metallic Ta—N compounds are deposited by a chemical vapor deposition method using an alkylimidotris(dialkylamido)Ta species, such as tertiaryamylimidotris(dimethylamido)Ta (TAIMATA), as Ta precursor. The deposition is conformal allowing for flexible introduction of the Ta—N metallic compounds into a CMOS processing flow. Devices processed with TaN or TaSiN show near ideal characteristics.
摘要翻译：公开了Ta和N的化合物，潜在地包括其它元素，并且电阻率低于约20mOmegacm，并且N与Ta的元素比大于约0.9，用作场效应器件中的栅极材料。这种化合物的典型实施方案TaSiN在典型的CMOS处理温度下在含有介电层和高k电介质层的SiO 2 2上是稳定的，功函数接近n型Si的功函数。金属Ta-N化合物通过化学气相沉积方法使用烷基亚氨基三（二烷基酰氨基）Ta种，例如叔戊酰亚胺基三（二甲基酰氨基）Ta（TAIMATA））作为Ta前体沉积。沉积是共形的，允许将Ta-N金属化合物柔性引入CMOS加工流程。用TaN或TaSiN处理的器件显示出接近理想的特性。

8. 发明授权

US07063871B2 CVD process capable of reducing incubation time 失效
标题翻译： CVD工艺能够减少孵化时间
公开(公告)号：US07063871B2
公开(公告)日：2006-06-20
申请号：US10617819
申请日：2003-07-14
申请人： Hideaki Yamasaki , Tatsuo Hatano , Tsukasa Matsuda , Taro Ikeda , Kazuhito Nakamura , Koumei Matsuzawa , Yumiko Kawano , Mitsuhiro Tachibana
发明人： Hideaki Yamasaki , Tatsuo Hatano , Tsukasa Matsuda , Taro Ikeda , Kazuhito Nakamura , Koumei Matsuzawa , Yumiko Kawano , Mitsuhiro Tachibana
IPC分类号： C23C16/16
CPC分类号： C23C16/16
摘要： A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.
摘要翻译：金属CVD法包括将含有羰基金属化合物的气态源材料以与金属羰基化合物具有第一分压的方式相连接的待处理基板的表面的工艺空间引入的工序（A）以及在金属羰基化合物具有第二较小分压的情况下，通过将含有羰基金属化合物的气态源材料引入到工艺空间中，在基板的表面上沉积金属膜的工序（B）。进行步骤（A），使得金属膜不会在基板上实质上沉积。

9. 发明申请

US20090197410A1 METHOD OF FORMING TASIN FILM 审中-公开
标题翻译：形成电影的方法
公开(公告)号：US20090197410A1
公开(公告)日：2009-08-06
申请号：US12306096
申请日：2007-06-21
申请人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano
发明人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano
IPC分类号： H01L21/443
CPC分类号： C23C16/34 , C23C16/52 , H01L21/28097 , H01L21/28556 , H01L29/4975 , H01L29/517
摘要： A substrate is disposed in a processing chamber. An organic Ta compound gas having Ta═N bond, a Si-containing gas and a N-containing gas are introduced into the processing chamber to form a TaSiN film on the substrate by CVD. In this film formation, at least one of a partial pressure of the Si-containing gas in the processing chamber, a total pressure in the processing chamber, a film forming temperature and a partial pressure of the N-containing gas in the processing chamber is controlled to thereby regulate Si concentration in the film. Particularly, when SiH4 gas is used as the Si-containing gas, the SiH4 gas partial pressure is determined based on the fact that the serried Si concentration in the film under giving process conditions can be expressed as a linear function involving the logarithm of the partial pressure of the SiH4 gas.
摘要翻译：衬底设置在处理室中。将具有Ta-N键的有机Ta化合物气体，含Si气体和含N气体引入到处理室中，通过CVD在衬底上形成TaSiN膜。在该膜形成中，处理室中的含Si气体的分压，处理室中的总压，成膜温度和处理室中的含N气体的分压中的至少一个为从而调节膜中的Si浓度。特别地，当使用SiH 4气体作为含Si气体时，SiH 4气体分压基于以下事实来确定：在给定工艺条件下膜中的塞状Si浓度可以表示为包括部分的对数的线性函数 SiH4气体的压力。

10. 发明申请

US20090142491A1 Method of Film Deposition and Film Deposition System 审中-公开
标题翻译：膜沉积和膜沉积系统的方法
公开(公告)号：US20090142491A1
公开(公告)日：2009-06-04
申请号：US11988298
申请日：2006-07-07
申请人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano
发明人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano
IPC分类号： C23C16/44
CPC分类号： C23C16/46 , C23C16/34 , C23C16/45531 , H01L21/28562 , H01L21/76843
摘要： The present invention is a method of film deposition that comprises a first gas-supplying step of supplying a high-melting-point organometallic material gas to a processing vessel that can be evacuated, and a second gas-supplying step of supplying, to the processing vessel, a gas consisting of one, or two or more gases selected from a nitrogen-containing gas, a silicon-containing gas, and a carbon-containing gas, wherein a thin metallic compound film composed of one, or two or more compounds selected from a high-melting-point metallic nitride, a high-melting-point metallic silicate, and a high-melting-point metallic carbide is deposited on the surface of an object to be processed, placed in the processing vessel. The first and second gas-supplying steps are alternately carried out, and in these steps, the object to be processed is held at a temperature equal to or higher than the decomposition-starting temperature of the high-melting-point organometallic material.
摘要翻译：本发明是一种薄膜沉积方法，其包括向能够抽真空的处理容器供给高熔点有机金属材料气体的第一气体供给步骤和向处理过程中供给第二气体供给步骤容器，由选自含氮气体，含硅气体和含碳气体中的一种或两种或更多种气体组成的气体，其中选择由一种或两种或更多种化合物组成的薄金属化合物膜从高熔点金属氮化物，高熔点金属硅酸盐和高熔点金属碳化物沉积在被处理物体的表面上，放置在处理容器中。交替进行第一和第二供气步骤，在这些步骤中，待处理物体保持在高熔点有机金属材料的分解 - 起始温度以上的温度。

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