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1. 发明申请

US20060030161A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060030161A1
公开(公告)日：2006-02-09
申请号：US11117341
申请日：2005-04-29
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa , Takeshi Kada
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa , Takeshi Kada
IPC分类号： H01L21/31
CPC分类号： H01L21/28518 , C23C16/42 , H01L21/28556
摘要： A technique capable of forming an NiSi film having excellent characteristics, which TiSi2 or CoSi2 produced thus far is not able to assume, without damaging a substrate is provided. A film forming material for forming a nickel silicide film or a Nickel film is provided, wherein an Ni source of said film is Ni(PF3)4.
摘要翻译：提供了能够形成具有优异特性的NiSi膜的技术，其中迄今为止产生的TiSi 2 N 2或CoSi 2 N不能假设，而不损坏基底。提供了一种用于形成硅化镍膜或镍膜的成膜材料，其中所述膜的Ni源是Ni（PF 3 3）4。

2. 发明申请

US20060068100A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060068100A1
公开(公告)日：2006-03-30
申请号：US11141002
申请日：2005-06-01
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： C23C16/00
CPC分类号： C23C16/18 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungsten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienylmolybdenum dihydride, a bismethylcyclopentadienylmolybdenum dihydride, a bisethylcyclopentadienylmolybdenum dihydride, and a bisisopropylcyclopentadienylmolybdenum dihydride.
摘要翻译：提供了能够使用不具有卤素的原料的技术，其可能对半导体元件施加不良影响，从而容易地形成纯度高的钼膜（硅化钼膜或氮化钼膜）低温。提供了用于形成钼膜，硅化钼膜或氮化钨膜的成膜材料，其中所述膜的Mo源是一种或多种选自二环戊二烯基二氢钼，二甲基环戊二烯基钼二氢化物，双乙基环戊二烯基钼二氢化物，和二异丙基环戊二烯基二钼酸二甲酯。

3. 发明申请

US20060068103A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060068103A1
公开(公告)日：2006-03-30
申请号：US11214738
申请日：2005-08-31
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： C23C16/00
CPC分类号： H01L21/28556 , C23C16/18 , C23C16/34 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienyltungsten dihydride, a bismethylcyclopentadienyltungsten dihydride, a bisethylcyclopentadienyltungsten dihydride, and a bisisopropylcyclopentadienyltungsten dihydride.
摘要翻译：提供了能够使用不含卤素的原料的技术，其具有对半导体元件造成不良影响的高可能性，从而容易地形成纯度高的钨膜（硅化钨膜或氮化钨膜）低温。提供了一种用于形成钨膜，硅化钨膜或碳酸钨酸盐膜的成膜材料，其中所述膜的W源是一种或多种选自双环戊二烯基二氢钨，二甲基环戊二烯基二氢化钨，双乙基环戊二烯基二氢化钨和双异丙基环戊二烯基二氢化钨。

4. 发明申请

US20060068101A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060068101A1
公开(公告)日：2006-03-30
申请号：US11141615
申请日：2005-06-01
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： C23C16/00
CPC分类号： H01L21/28556 , C23C16/18 , C23C16/34 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminoditungsten, a hexaethylmethylaminoditungsten, and a hexadiethylaminoditungsten.
摘要翻译：提供了能够使用不含卤素的原料的技术，其具有对半导体元件造成不良影响的高可能性，从而容易地形成纯度高的钨膜（硅化钨膜或氮化钨膜）低温。提供了一种用于形成钨膜，硅化钨膜或钨酸钠膜的成膜材料，其中所述膜的W源是一种或多种选自六甲基二氨基二钨，六乙基甲基氨基二钨和六
乙基氨基二钨的化合物。

5. 发明授权

US07312140B2 Film forming method 有权
标题翻译：成膜方法
公开(公告)号：US07312140B2
公开(公告)日：2007-12-25
申请号：US11141314
申请日：2005-06-01
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature.A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.
摘要翻译：提供了能够使用不具有卤素的原料的技术，其可能对半导体元件施加不良影响，从而容易地形成纯度高的钼膜（硅化钼膜或氮化钼膜）低温。提供了一种用于形成钼膜，硅化钼膜或碳酸钨膜的成膜材料，其中所述膜的Mo源是选自六甲基二甲基氨基钼，六乙基甲基氨基二钼和六
乙基氨基二钼的一种或多种化学化合物。

6. 发明申请

US20060067230A1 Film forming method 有权
标题翻译：成膜方法
公开(公告)号：US20060067230A1
公开(公告)日：2006-03-30
申请号：US11141314
申请日：2005-06-01
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： H04J1/16
CPC分类号： C23C16/18 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.
摘要翻译：提供了能够使用不具有卤素的原料的技术，其可能对半导体元件施加不良影响，从而容易地形成纯度高的钼膜（硅化钼膜或氮化钼膜）低温。提供了一种用于形成钼膜，硅化钼膜或碳酸钨膜的成膜材料，其中所述膜的Mo源是选自六甲基二甲基氨基钼，六乙基甲基氨基二钼和六
乙基氨基二钼的一种或多种化学化合物。

7. 发明授权

US07612416B2 Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same 有权
标题翻译：具有位于层间绝缘膜下方的导电部分的半导体器件及其制造方法
公开(公告)号：US07612416B2
公开(公告)日：2009-11-03
申请号：US10575631
申请日：2004-09-29
申请人： Kiyoshi Takeuchi , Koichi Terashima , Hitoshi Wakabayashi , Shigeharu Yamagami , Atsushi Ogura , Masayasu Tanaka , Masahiro Nomura , Koichi Takeda , Toru Tatsumi , Koji Watanabe
发明人： Kiyoshi Takeuchi , Koichi Terashima , Hitoshi Wakabayashi , Shigeharu Yamagami , Atsushi Ogura , Masayasu Tanaka , Masahiro Nomura , Koichi Takeda , Toru Tatsumi , Koji Watanabe
IPC分类号： H01L27/01
CPC分类号： H01L29/785 , H01L21/845 , H01L27/092 , H01L27/1211 , H01L29/41791 , H01L29/42392 , H01L29/665 , H01L29/66628 , H01L29/66795 , H01L29/7854 , H01L2029/7858 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device comprising: a MIS type field effect transistor which comprises a semiconductor raised portion protruding from a substrate plane, a gate electrode extending over the semiconductor raised portion from the top onto the opposite side faces of the semiconductor raised portion, a gate insulation film existing between the gate electrode and the semiconductor raised portion, and source and drain regions provided in the semiconductor raised portion; an interlayer insulating film provided on a substrate including the transistor; and a buried conductor interconnect that is formed by filling in a trench formed in the interlayer insulating film with a conductor, wherein the buried conductor interconnect connects one of the source and drain regions of the semiconductor raised portion and another conductive portion below the interlayer insulating film.
摘要翻译：一种半导体器件，包括：MIS型场效应晶体管，其包括从衬底平面突出的半导体凸起部分，从半导体凸起部分顶部延伸到半导体凸起部分的相对侧面上的栅电极，栅极绝缘膜存在于栅极电极和半导体凸起部分之间，以及设置在半导体凸起部分中的源极和漏极区域; 设置在包括晶体管的基板上的层间绝缘膜; 以及通过用导体填充形成在所述层间绝缘膜中的沟槽而形成的掩埋导体互连，其中所述掩埋导体布线连接所述半导体凸起部分的所述源极和漏极区域中的一个以及所述层间绝缘膜下方的另一个导电部分。

8. 发明授权

US06933569B2 SOI MOSFET 失效
公开(公告)号：US06933569B2
公开(公告)日：2005-08-23
申请号：US10668349
申请日：2003-09-24
申请人： Risho Koh , Shigeharu Yamagami , Jong-wook Lee , Hitoshi Wakabayashi , Yukishige Saito , Atsushi Ogura , Mitsuru Narihiro , Kohichi Arai , Hisashi Takemura , Tohru Mogami , Toyoji Yamamoto , Yukinori Ochiai
发明人： Risho Koh , Shigeharu Yamagami , Jong-wook Lee , Hitoshi Wakabayashi , Yukishige Saito , Atsushi Ogura , Mitsuru Narihiro , Kohichi Arai , Hisashi Takemura , Tohru Mogami , Toyoji Yamamoto , Yukinori Ochiai
IPC分类号： H01L21/76 , H01L21/336 , H01L21/8238 , H01L21/84 , H01L27/01 , H01L27/08 , H01L27/092 , H01L27/12 , H01L29/786 , H01L21/01
CPC分类号： H01L29/66772 , H01L21/84 , H01L27/1203 , H01L29/78609 , H01L29/78615 , H01L29/78621
摘要： A semiconductor device includes a semiconductor layer formed on an insulator, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film and extending in a first direction, source/drain regions formed in the semiconductor layer on both sides of the gate electrode, a body contact region in the semiconductor layer, a partial isolating region in which a field insulating film thicker than the gate insulating film intervenes between the semiconductor layer and an extending portion of the gate electrode, and a full isolating region in which the semiconductor layer on the insulator is removed. The full isolating region is formed to be in contact with at least a part of a side parallel to the first direction of the source/drain regions.
摘要翻译：半导体器件包括形成在绝缘体上的半导体层，形成在半导体层上的栅极绝缘膜，形成在栅极绝缘膜上并沿第一方向延伸的栅电极，在两侧的半导体层中形成的源/漏区所述半导体层中的主体接触区域，其中比所述栅极绝缘膜更厚的场绝缘膜介于所述半导体层和所述栅电极的延伸部分之间的部分隔离区域，以及完全隔离区域去除绝缘体上的半导体层。完全隔离区域形成为与平行于源极/漏极区域的第一方向的一侧的至少一部分接触。

9. 发明授权

US06919563B2 Defect evaluation apparatus utilizing positrons 失效
标题翻译：利用正电子的缺陷评估装置
公开(公告)号：US06919563B2
公开(公告)日：2005-07-19
申请号：US10649664
申请日：2003-08-28
申请人： Akira Uedono , Atsushi Ogura
发明人： Akira Uedono , Atsushi Ogura
IPC分类号： G01N23/225 , G01N23/00 , G01Q30/08 , G01T1/172 , G21K1/00 , G21K1/10 , G21K5/04 , H01J37/26
CPC分类号： G01T1/172
摘要： Disclosed is a defect evaluation apparatus comprising a source section having a source for generating positrons and a moderator for decelerating the positrons, a sample holding section for holding a sample to be measured, a transfer section for transferring the positrons from the source section to the sample holding section, and detection means for detecting γ rays emitted from the sample being measured, characterized in that the apparatus further comprises heating means for heating the moderator in a position where there is a possibility of the source being thermally damaged if there is no protection means mentioned below in the source section, and protection means for protecting the source from the heating means and heated moderator when the moderator is being heated using the heating means.
摘要翻译：公开了一种缺陷评估装置，包括：源部分，具有用于产生正电子的源和用于使正电子减速的调节剂;用于保持待测样品的样品保持部分;用于将正电子从源部分转移到样品的转移部分; 保持部，以及检测装置，用于检测被测试样品发射的γ射线，其特征在于，所述装置还包括加热装置，用于在没有保护装置的情况下，在可能发生源受热损坏的位置加热调节剂以及保护装置，用于当使用加热装置加热调节剂时，保护来自加热装置和加热的慢化剂的源。

10. 发明申请

US20070187682A1 Semiconductor device having fin-type effect transistor 审中-公开
标题翻译：具有鳍式效应晶体管的半导体器件
公开(公告)号：US20070187682A1
公开(公告)日：2007-08-16
申请号：US10569451
申请日：2004-08-27
申请人： Kiyoshi Takeuchi , Koji Watanabe , Koichi Terashima , Atsushi Ogura , Toru Tatsumi , Koichi Takeda , Masahiro Nomura , Masayasu Tanaka , Shigeharu Yamagami , Hitoshi Wakabayashi
发明人： Kiyoshi Takeuchi , Koji Watanabe , Koichi Terashima , Atsushi Ogura , Toru Tatsumi , Koichi Takeda , Masahiro Nomura , Masayasu Tanaka , Shigeharu Yamagami , Hitoshi Wakabayashi
IPC分类号： H01L29/04
CPC分类号： H01L29/785 , H01L21/823807 , H01L21/823821 , H01L21/823828 , H01L21/82385 , H01L27/092 , H01L27/0924 , H01L29/045 , H01L29/42392 , H01L29/66795 , H01L29/7854
摘要： There is provided a semiconductor device comprising an n-type and a p-type field effect transistors, meeting the conditions that in terms of a crystal orientation of the protruding semiconductor region constituting the n-type field effect transistor, its plane parallel to the substrate is substantially a {100} plane and its side surface is a {100} plane substantially orthogonal to the {100} plane, and that in terms of a crystal orientation of the protruding semiconductor region constituting the p-type field effect transistor, its plane parallel to the substrate is substantially a {100} plane and its side surface is a {110} plane substantially orthogonal to the {100} plane.
摘要翻译：提供一种包括n型和p型场效应晶体管的半导体器件，满足以下条件：就组成n型场效应晶体管的突出半导体区域的晶体取向而言，其平行于衬底的平面基本上是{100}面，其侧面是与{100}面大致正交的{100}面，就构成p型场效应晶体管的突出半导体区域的晶体取向而言，其平面与基板平行的基本上是{100}平面，其侧面是与{100}平面基本正交的{110}平面。

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