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1. 发明申请

US20060030161A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060030161A1
公开(公告)日：2006-02-09
申请号：US11117341
申请日：2005-04-29
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa , Takeshi Kada
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa , Takeshi Kada
IPC分类号： H01L21/31
CPC分类号： H01L21/28518 , C23C16/42 , H01L21/28556
摘要： A technique capable of forming an NiSi film having excellent characteristics, which TiSi2 or CoSi2 produced thus far is not able to assume, without damaging a substrate is provided. A film forming material for forming a nickel silicide film or a Nickel film is provided, wherein an Ni source of said film is Ni(PF3)4.
摘要翻译：提供了能够形成具有优异特性的NiSi膜的技术，其中迄今为止产生的TiSi 2 N 2或CoSi 2 N不能假设，而不损坏基底。提供了一种用于形成硅化镍膜或镍膜的成膜材料，其中所述膜的Ni源是Ni（PF 3 3）4。

2. 发明申请

US20050059243A1 Film forming material, film forming method, and silicide film 有权
标题翻译：成膜材料，成膜方法和硅化物膜
公开(公告)号：US20050059243A1
公开(公告)日：2005-03-17
申请号：US10895871
申请日：2004-07-22
申请人： Hideaki Machida , Yoshio Ohshita , Masato Ishikawa , Takeshi Kada
发明人： Hideaki Machida , Yoshio Ohshita , Masato Ishikawa , Takeshi Kada
IPC分类号： C23C16/42 , H01L21/28 , H01L21/285 , H01L21/44
CPC分类号： H01L21/28518 , C23C16/42
摘要： A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: General Formula [I] where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10 is H or a hydrocarbon group.
摘要翻译：提供了通过CVD工艺形成可用于下一代晶体管的硅化物薄膜的技术。在形成由Ni和Si形成的硅化物膜的技术中，其中使用由以下通式[I]表示的一种或多种化合物作为Ni源：通式[I]其中R1，R2，R3，R4， R5，R6，R7，R8，R9或R10是H或烃基。

3. 发明授权

US07045457B2 Film forming material, film forming method, and silicide film 有权
标题翻译：成膜材料，成膜方法和硅化物膜
公开(公告)号：US07045457B2
公开(公告)日：2006-05-16
申请号：US10895871
申请日：2004-07-22
申请人： Hideaki Machida , Yoshio Ohshita , Masato Ishikawa , Takeshi Kada
发明人： Hideaki Machida , Yoshio Ohshita , Masato Ishikawa , Takeshi Kada
IPC分类号： H01L21/4763
CPC分类号： H01L21/28518 , C23C16/42
摘要： A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10 is H or a hydrocarbon group.
摘要翻译：提供了通过CVD工艺形成可用于下一代晶体管的硅化物薄膜的技术。在形成由Ni和Si形成的硅化物膜的技术中，其中使用由以下通式[I]表示的一种或多种化合物作为Ni源：其中R 1，R 2 R 2，R 3，R 4，R 5，R 6，R N， R 7，R 9或R 10是H或烃基。

4. 发明申请

US20050048799A1 Film forming material, film forming method, and film 审中-公开
标题翻译：成膜材料，成膜方法和膜
公开(公告)号：US20050048799A1
公开(公告)日：2005-03-03
申请号：US10895827
申请日：2004-07-22
申请人： Hideaki Machida , Takeshi Kada , Masato Ishikawa , Yoshio Ohshita
发明人： Hideaki Machida , Takeshi Kada , Masato Ishikawa , Yoshio Ohshita
IPC分类号： C23C16/42 , C23C16/40 , C23C16/46 , H01L21/28 , H01L21/314 , H01L21/316 , H01L29/51 , H01L21/22 , H01L21/336 , H01L21/38 , H01L21/469 , H01L21/8242
CPC分类号： H01L21/28194 , C23C16/401 , H01L21/02148 , H01L21/02216 , H01L21/02271 , H01L21/3142 , H01L21/31612 , H01L21/31645 , H01L29/517 , H01L29/518
摘要： A technique is provided of creating high-purity amorphous gate oxides film through a CVD process. In the technique of creating Hf—Si oxide films through the chemical vapor deposition process, Si(OR)4 and Hf(NR′R″)4 are used.
摘要翻译：提供了通过CVD工艺产生高纯度非晶态栅氧化物膜的技术。在通过化学气相沉积工艺制造Hf-Si氧化物膜的技术中，使用Si（OR）4和Hf（NR'R“）4。

5. 发明申请

US20060068103A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060068103A1
公开(公告)日：2006-03-30
申请号：US11214738
申请日：2005-08-31
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： C23C16/00
CPC分类号： H01L21/28556 , C23C16/18 , C23C16/34 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienyltungsten dihydride, a bismethylcyclopentadienyltungsten dihydride, a bisethylcyclopentadienyltungsten dihydride, and a bisisopropylcyclopentadienyltungsten dihydride.
摘要翻译：提供了能够使用不含卤素的原料的技术，其具有对半导体元件造成不良影响的高可能性，从而容易地形成纯度高的钨膜（硅化钨膜或氮化钨膜）低温。提供了一种用于形成钨膜，硅化钨膜或碳酸钨酸盐膜的成膜材料，其中所述膜的W源是一种或多种选自双环戊二烯基二氢钨，二甲基环戊二烯基二氢化钨，双乙基环戊二烯基二氢化钨和双异丙基环戊二烯基二氢化钨。

6. 发明申请

US20060068101A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060068101A1
公开(公告)日：2006-03-30
申请号：US11141615
申请日：2005-06-01
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： C23C16/00
CPC分类号： H01L21/28556 , C23C16/18 , C23C16/34 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminoditungsten, a hexaethylmethylaminoditungsten, and a hexadiethylaminoditungsten.
摘要翻译：提供了能够使用不含卤素的原料的技术，其具有对半导体元件造成不良影响的高可能性，从而容易地形成纯度高的钨膜（硅化钨膜或氮化钨膜）低温。提供了一种用于形成钨膜，硅化钨膜或钨酸钠膜的成膜材料，其中所述膜的W源是一种或多种选自六甲基二氨基二钨，六乙基甲基氨基二钨和六
乙基氨基二钨的化合物。

7. 发明授权

US07312140B2 Film forming method 有权
标题翻译：成膜方法
公开(公告)号：US07312140B2
公开(公告)日：2007-12-25
申请号：US11141314
申请日：2005-06-01
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： H01L21/44
CPC分类号： C23C16/18 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature.A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.
摘要翻译：提供了能够使用不具有卤素的原料的技术，其可能对半导体元件施加不良影响，从而容易地形成纯度高的钼膜（硅化钼膜或氮化钼膜）低温。提供了一种用于形成钼膜，硅化钼膜或碳酸钨膜的成膜材料，其中所述膜的Mo源是选自六甲基二甲基氨基钼，六乙基甲基氨基二钼和六
乙基氨基二钼的一种或多种化学化合物。

8. 发明申请

US20060067230A1 Film forming method 有权
标题翻译：成膜方法
公开(公告)号：US20060067230A1
公开(公告)日：2006-03-30
申请号：US11141314
申请日：2005-06-01
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： H04J1/16
CPC分类号： C23C16/18 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungasten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminodimolybdenum, a hexaethylmethylaminodimolybdenum, and a hexadiethylaminodimolybdenum.
摘要翻译：提供了能够使用不具有卤素的原料的技术，其可能对半导体元件施加不良影响，从而容易地形成纯度高的钼膜（硅化钼膜或氮化钼膜）低温。提供了一种用于形成钼膜，硅化钼膜或碳酸钨膜的成膜材料，其中所述膜的Mo源是选自六甲基二甲基氨基钼，六乙基甲基氨基二钼和六
乙基氨基二钼的一种或多种化学化合物。

9. 发明申请

US20060068100A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060068100A1
公开(公告)日：2006-03-30
申请号：US11141002
申请日：2005-06-01
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： C23C16/00
CPC分类号： C23C16/18 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form molybdenum films (molybdenum silicide films or molybdenum nitride films) of which purity is high at a low temperature. A film forming material for forming molybdenum films, molybdenum silicide films, or tungsten nitride films is provided, wherein a Mo source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienylmolybdenum dihydride, a bismethylcyclopentadienylmolybdenum dihydride, a bisethylcyclopentadienylmolybdenum dihydride, and a bisisopropylcyclopentadienylmolybdenum dihydride.
摘要翻译：提供了能够使用不具有卤素的原料的技术，其可能对半导体元件施加不良影响，从而容易地形成纯度高的钼膜（硅化钼膜或氮化钼膜）低温。提供了用于形成钼膜，硅化钼膜或氮化钨膜的成膜材料，其中所述膜的Mo源是一种或多种选自二环戊二烯基二氢钼，二甲基环戊二烯基钼二氢化物，双乙基环戊二烯基钼二氢化物，和二异丙基环戊二烯基二钼酸二甲酯。

10. 发明申请

US20060029734A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060029734A1
公开(公告)日：2006-02-09
申请号：US11117399
申请日：2005-04-29
申请人： Hideaki Machida , Takeshi Kada , Masato Ishikawa , Naoto Noda
发明人： Hideaki Machida , Takeshi Kada , Masato Ishikawa , Naoto Noda
IPC分类号： C23C16/00
CPC分类号： C23C16/50 , C23C16/401 , C23C16/44
摘要： A high-quality insulating film is provided, of which a dielectric constant is lower than that of the conventional SiO2, and in which no leak current exceeding 10−8 A/cm2 occurs at the time of a voltage of 20 V. A material for forming a film with a chemical vapor deposition process contains one or more chemical compounds selected from the group belonging to the following [I], and one or more chemical compounds selected from the group belonging to the following [II]: HSi(OCH3)3, H2Si(OCH3)2, and HSi(CH3) (OCH3)2 [I] (CH2═CH)Si(OCH3)3, (CH2═CH)Si(OC2H5)3, (CH2═CH)Si(CH3)(OCH3)2, (CH2═CH)Si(CH3)(OC2H5)2, (CH2=CH)Si(CH3)2(OCH3), and (CH2=CH)Si(CH3)2(OC2H5) [II]
摘要翻译：提供了一种高质量的绝缘膜，其介电常数低于常规SiO 2的绝缘膜，其中没有超过10 -8 A / cm 2的电压发生在电压为20V的时候。用化学气相沉积工艺形成膜的材料含有一种或多种选自以下[I]的化合物，和一种或多种选自属于以下[II]的化合物：<？in-line-formula description =“In-line formula”end =“lead”？> HSi（OCH 3） H 3（CH 3）3，H 2 Si（OCH 3）2，和HSi（CH 3）（OCH 3）2 在线公式描述=“在线公式”end =“tail”？> <？（CH 2）-CH 2 Si（OCH 3 3）3（CH 2）3（CH 2）（CH 2 CH 2）3 Si（OC 2 H 5）3，（CH 3） CH 2 CH（CH 3）3（OCH 3）（OCH 3）

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