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1. 发明授权

US06933569B2 SOI MOSFET 失效
公开(公告)号：US06933569B2
公开(公告)日：2005-08-23
申请号：US10668349
申请日：2003-09-24
申请人： Risho Koh , Shigeharu Yamagami , Jong-wook Lee , Hitoshi Wakabayashi , Yukishige Saito , Atsushi Ogura , Mitsuru Narihiro , Kohichi Arai , Hisashi Takemura , Tohru Mogami , Toyoji Yamamoto , Yukinori Ochiai
发明人： Risho Koh , Shigeharu Yamagami , Jong-wook Lee , Hitoshi Wakabayashi , Yukishige Saito , Atsushi Ogura , Mitsuru Narihiro , Kohichi Arai , Hisashi Takemura , Tohru Mogami , Toyoji Yamamoto , Yukinori Ochiai
IPC分类号： H01L21/76 , H01L21/336 , H01L21/8238 , H01L21/84 , H01L27/01 , H01L27/08 , H01L27/092 , H01L27/12 , H01L29/786 , H01L21/01
CPC分类号： H01L29/66772 , H01L21/84 , H01L27/1203 , H01L29/78609 , H01L29/78615 , H01L29/78621
摘要： A semiconductor device includes a semiconductor layer formed on an insulator, a gate insulating film formed on the semiconductor layer, a gate electrode formed on the gate insulating film and extending in a first direction, source/drain regions formed in the semiconductor layer on both sides of the gate electrode, a body contact region in the semiconductor layer, a partial isolating region in which a field insulating film thicker than the gate insulating film intervenes between the semiconductor layer and an extending portion of the gate electrode, and a full isolating region in which the semiconductor layer on the insulator is removed. The full isolating region is formed to be in contact with at least a part of a side parallel to the first direction of the source/drain regions.
摘要翻译：半导体器件包括形成在绝缘体上的半导体层，形成在半导体层上的栅极绝缘膜，形成在栅极绝缘膜上并沿第一方向延伸的栅电极，在两侧的半导体层中形成的源/漏区所述半导体层中的主体接触区域，其中比所述栅极绝缘膜更厚的场绝缘膜介于所述半导体层和所述栅电极的延伸部分之间的部分隔离区域，以及完全隔离区域去除绝缘体上的半导体层。完全隔离区域形成为与平行于源极/漏极区域的第一方向的一侧的至少一部分接触。

2. 发明授权

US6147390A Solid-state imaging device with film of low hydrogen permeability including openings 失效
标题翻译：具有低透过率的薄膜的固态成像装置包括开口
公开(公告)号：US6147390A
公开(公告)日：2000-11-14
申请号：US52306
申请日：1998-03-31
申请人： Takashi Nakano , Kohichi Arai , Nobukazu Teranishi , Nobuhiko Mutoh
发明人： Takashi Nakano , Kohichi Arai , Nobukazu Teranishi , Nobuhiko Mutoh
IPC分类号： H01L27/14 , H01L27/148 , H01L31/10 , H01L31/18 , H01L32/0216
CPC分类号： H01L31/186 , H01L27/14806 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either directly or with an insulating film interposed therebetween. The intermediate-refractive-index film has a refractive index lower than the semiconductor substrate and a low hydrogen permeability. A thin film is disposed on an entrance surface of the intermediate-refractive-index film and having refractive index lower than the intermediate-refractive-index film, the thin film being permeable to hydrogen. The intermediate-refractive-index film serves as a reflection-resistant film. Reflections of incident light applied through the thin film and the reflection-resistant film to the sensor of the semiconductor substrate are suppressed. The intermediate-refractive-index film has a hole defined therein for passage of hydrogen therethrough upon hydrogen alloying. After the thin film is formed on the surface of the intermediate-refractive-index film, hydrogen passes through the hole in the intermediate-refractive-index film to reach the surface of the semiconductor substrate near the sensor upon hydrogen alloying.
摘要翻译：半导体基板具有设置在其入射面上的表面层中的传感器，用于接收入射光，并且中间折射率膜直接设置在半导体衬底的整个入射面上，或者设置在绝缘膜之间。中间折射率膜的折射率低于半导体衬底，并且具有低的透氢性。薄膜设置在中折射率膜的入射面上，折射率低于中折射率膜，该薄膜可透过氢气。中等折射率膜用作抗反射膜。抑制通过薄膜和抗反射膜施加到半导体基板的传感器的入射光的反射。中间折射率膜在氢合金化时具有限定在其中的氢气通过的孔。在中间折射率膜的表面上形成薄膜之后，氢通过中间折射率膜的孔，在氢合金化之后到达传感器附近的半导体衬底的表面。

3. 发明授权

US06379993B1 Solid-state imaging device with a film of low hydrogen permeability and a method of manufacturing same 失效
标题翻译：具有低透氢性的薄膜的固态成像装置及其制造方法
公开(公告)号：US06379993B1
公开(公告)日：2002-04-30
申请号：US09666505
申请日：2000-09-20
申请人： Takashi Nakano , Kohichi Arai , Nobukazu Teranishi , Nobuhiko Mutoh
发明人： Takashi Nakano , Kohichi Arai , Nobukazu Teranishi , Nobuhiko Mutoh
IPC分类号： H01L21339
CPC分类号： H01L31/186 , H01L27/14806 , H01L31/1804 , H01L31/182 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A semiconductor substrate has a sensor disposed in a surface layer on an entrance surface thereof for receiving incident light, and an intermediate-refractive-index film is disposed on the entire entrance surface of the semiconductor substrate either directly or with an insulating film interposed therebetween. The intermediate-refractive-index film has a refractive index lower than the semiconductor substrate and a low hydrogen permeability thin film is disposed on an entrance surface of the intermediate-refractive-index film and having refractive index lower than the intermediate-refractive-index film the thin film being permeable to hydrogen. The intermediate-refractive-index film serves as a reflection-resistant film. Reflections of incident light applied through the thin film and the reflection-resistant film of the sensor of the semiconductor substrate are suppressed. The intermediate-refractive-index film has a hole defined therein for passage of hydrogen therethrough upon hydrogen alloying. After the thin film is formed on the surface of the intermediate-refractive-index film, hydrogen passes through the hole in the intermediate-refractive-index film to reach the surface of the semiconductor substrate near the sensor upon hydrogen alloying.
摘要翻译：半导体基板具有设置在其入射面上的表面层中的传感器，用于接收入射光，并且中间折射率膜直接设置在半导体衬底的整个入射面上，或者设置在绝缘膜之间。中间折射率膜的折射率低于半导体基板，低透氢性薄膜设置在中折射率膜的入射面上，折射率低于中折射率膜该薄膜可透过氢气。中等折射率膜用作抗反射膜。通过半导体衬底的传感器的薄膜和抗反射膜施加的入射光的反射被抑制。中间折射率膜在氢合金化时具有限定在其中的氢气通过的孔。在中间折射率膜的表面上形成薄膜之后，氢通过中间折射率膜的孔，在氢合金化之后到达传感器附近的半导体衬底的表面。

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