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1. 发明授权

US07694243B2 Avoiding device stressing 失效
标题翻译：避免设备强调
公开(公告)号：US07694243B2
公开(公告)日：2010-04-06
申请号：US11964894
申请日：2007-12-27
申请人： Hibourahima Camara , Louis C. Hsu , James D. Rockrohr , Karl D. Selander , Huihao Xu , Steven J. Zier
发明人： Hibourahima Camara , Louis C. Hsu , James D. Rockrohr , Karl D. Selander , Huihao Xu , Steven J. Zier
IPC分类号： G06F17/50
CPC分类号： H03K19/00315
摘要： A system for protecting a weak device operating in micro-electronic circuit and a design structure including the system embodied in a machine readable medium are disclosed. The system includes a high voltage power supply from high voltage overstressing prevents the weak device from failing during power-up, power-down, and when a low voltage power supply in a multiple power supply system is absent. The system further includes a low voltage power supply detection circuit configured to detect circuit power-up, circuit power-down, and when the low voltage power supply is absent, and generate a control signal upon detection. The system further includes a controlled current mirror device configured to provide a trickle current to maintain a conduction channel in the weak device in response to the control signal received from the low voltage power supply detection circuit during circuit power-up, circuit power-down, and when the low voltage power supply is absent.
摘要翻译：公开了一种用于保护在微电子电路中操作的弱设备的系统和包括体现在机器可读介质中的系统的设计结构。该系统包括来自高压过应力的高压电源，防止弱电装置在上电，掉电期间以及当多电源系统中的低电压电源不存在时发生故障。该系统还包括：低电压电源检测电路，被配置为检测电路上电，电路断电以及当低电压电源不存在时，并在检测时产生控制信号。该系统还包括被配置为提供涓流电流的受控电流镜装置，以响应于在电路加电，电路断电期间从低电压电源检测电路接收的控制信号来保持弱装置中的导通通道，并且当低电压电源不存在时。

2. 发明申请

US20090172614A1 AVOIDING DEVICE STRESSING 失效
标题翻译：避免设备压力
公开(公告)号：US20090172614A1
公开(公告)日：2009-07-02
申请号：US11964894
申请日：2007-12-27
申请人： Hibourahima Camara , Louis C. Hsu , James D. Rockrohr , Karl D. Selander , Huihao Xu , Steven J. Zier
发明人： Hibourahima Camara , Louis C. Hsu , James D. Rockrohr , Karl D. Selander , Huihao Xu , Steven J. Zier
IPC分类号： G06F17/50
CPC分类号： H03K19/00315
摘要： A system for protecting a weak device operating in micro-electronic circuit and a design structure including the system embodied in a machine readable medium are disclosed. The system includes a high voltage power supply from high voltage overstressing prevents the weak device from failing during power-up, power-down, and when a low voltage power supply in a multiple power supply system is absent. The system further includes a low voltage power supply detection circuit configured to detect circuit power-up, circuit power-down, and when the low voltage power supply is absent, and generate a control signal upon detection. The system further includes a controlled current mirror device configured to provide a trickle current to maintain a conduction channel in the weak device in response to the control signal received from the low voltage power supply detection circuit during circuit power-up, circuit power-down, and when the low voltage power supply is absent.
摘要翻译：公开了一种用于保护在微电子电路中操作的弱设备的系统和包括体现在机器可读介质中的系统的设计结构。该系统包括来自高压过应力的高压电源，防止弱电装置在上电，掉电期间以及当多电源系统中的低电压电源不存在时发生故障。该系统还包括：低电压电源检测电路，被配置为检测电路上电，电路断电以及当低电压电源不存在时，并在检测时产生控制信号。该系统还包括被配置为提供涓流电流的受控电流镜装置，以响应于在电路加电，电路断电期间从低电压电源检测电路接收的控制信号来保持弱装置中的导通通道，并且当低电压电源不存在时。

3. 发明授权

US07332956B2 Method to avoid device stressing 有权
标题翻译：避免设备应力的方法
公开(公告)号：US07332956B2
公开(公告)日：2008-02-19
申请号：US11163688
申请日：2005-10-27
申请人： Hibourahima Camara , Louis C. Hsu , James D. Rockrohr , Karl D. Selander , Huihao Xu , Steven J. Zier
发明人： Hibourahima Camara , Louis C. Hsu , James D. Rockrohr , Karl D. Selander , Huihao Xu , Steven J. Zier
IPC分类号： G05F1/10
CPC分类号： H03K17/223 , G05F3/262 , G11C5/144 , G11C5/145 , G11C7/20 , H03K17/08
摘要： A system for protecting a weak device operating in micro-electronic circuit that includes a high voltage power supply from high voltage over stressing prevents the weak device from failing during power-up, power-down, and when a low voltage power supply in a multiple power supply system is absent. The system includes a low voltage power supply detection circuit configured to detect circuit power-up, circuit power-down, and when the low voltage power supply is absent, and generate a control signal upon detection. The system further includes a controlled current mirror device configured to provide a trickle current to maintain a conduction channel in the weak device in response to the control signal received from the low voltage power supply detection circuit during circuit power-up, circuit power-down, and when the low voltage power supply is absent.
摘要翻译：用于保护在微电子电路中操作的弱电装置的系统包括来自高电压过应力的高压电源，防止弱电装置在上电，断电期间发生故障，并且当多个电源中的低电压电源供电系统不存在。该系统包括低电压电源检测电路，其被配置为检测电路上电，电路掉电以及当低电压电源不存在时，并且在检测时产生控制信号。该系统还包括被配置为提供涓流电流的受控电流镜装置，以响应于在电路加电，电路断电期间从低电压电源检测电路接收的控制信号来保持弱装置中的导通通道，并且当低电压电源不存在时。

4. 发明授权

US07409019B2 High Speed Multi-Mode Receiver with adaptive receiver equalization and controllable transmitter pre-distortion 有权
标题翻译：具有自适应接收机均衡和可控发射机预失真的高速多模式接收机
公开(公告)号：US07409019B2
公开(公告)日：2008-08-05
申请号：US10711713
申请日：2004-09-30
申请人： Louis C. Hsu , Brian L. Ji , James S. Mason , Karl D. Selander , Michael A. Sorna , Steven J. Zier
发明人： Louis C. Hsu , Brian L. Ji , James S. Mason , Karl D. Selander , Michael A. Sorna , Steven J. Zier
IPC分类号： H04L27/08
CPC分类号： H04L25/085 , H03F1/3241 , H04L25/0278 , H04L25/0292 , H04L25/03343 , H04L25/061 , H04L2025/0349 , H04L2025/03566 , H04L2025/03617 , H04L2025/03808
摘要： A data receiver is provided which is operable to receive a signal controllably pre-distorted and transmitted by a transmitter, to generate information for adjusting the pre-distortion applied to the signal transmitted by the transmitter, and to transmit the information to the transmitter. The receiver is further operable to perform adaptive equalization to receive the signal transmitted by the transmitter.
摘要翻译：提供了一种数据接收器，其可操作以接收由发射机可控地预失真和发送的信号，以产生用于调整应用于由发射机发送的信号的预失真的信息，并将该信息发送到发射机。接收机还可操作以执行自适应均衡以接收由发射机发送的信号。

5. 发明授权

US07660350B2 High-speed multi-mode receiver 失效
标题翻译：高速多模接收机
公开(公告)号：US07660350B2
公开(公告)日：2010-02-09
申请号：US12218272
申请日：2008-07-14
申请人： Louis C. Hsu , Brian L. Ji , James S. Mason , Karl D. Selander , Michael A. Soma , Steven J. Zier
发明人： Louis C. Hsu , Brian L. Ji , James S. Mason , Karl D. Selander , Michael A. Soma , Steven J. Zier
IPC分类号： H04B3/46
CPC分类号： H04L25/085 , H03F1/3241 , H04L25/0278 , H04L25/0292 , H04L25/03343 , H04L25/061 , H04L2025/0349 , H04L2025/03566 , H04L2025/03617 , H04L2025/03808
摘要： A data receiver is provided which is operable to receive a signal controllably pre-distorted and transmitted by a transmitter, to generate information for adjusting the pre-distortion applied to the signal transmitted by the transmitter, and to transmit the information to the transmitter. The receiver is further operable to perform adaptive equalization to receive the signal transmitted by the transmitter.
摘要翻译：提供了一种数据接收器，其可操作以接收由发射机可控地预失真和发送的信号，以产生用于调整应用于由发射机发送的信号的预失真的信息，并将该信息发送到发射机。接收机还可操作以执行自适应均衡以接收由发射机发送的信号。

6. 发明申请

US20080298520A1 High-speed multi-mode receiver 失效
标题翻译：高速多模接收机
公开(公告)号：US20080298520A1
公开(公告)日：2008-12-04
申请号：US12218272
申请日：2008-07-14
申请人： Louis C. Hsu , Brian L. Ji , James S. Mason , Karl D. Selander , Michael A. Soma , Steven J. Zier
发明人： Louis C. Hsu , Brian L. Ji , James S. Mason , Karl D. Selander , Michael A. Soma , Steven J. Zier
IPC分类号： H04L27/08
CPC分类号： H04L25/085 , H03F1/3241 , H04L25/0278 , H04L25/0292 , H04L25/03343 , H04L25/061 , H04L2025/0349 , H04L2025/03566 , H04L2025/03617 , H04L2025/03808
摘要： A data receiver is provided which is operable to receive a signal controllably pre-distorted and transmitted by a transmitter, to generate information for adjusting the pre-distortion applied to the signal transmitted by the transmitter, and to transmit the information to the transmitter. The receiver is further operable to perform adaptive equalization to receive the signal transmitted by the transmitter.
摘要翻译：提供了一种数据接收器，其可操作以接收由发射机可控地预失真和发送的信号，以产生用于调整应用于由发射机发送的信号的预失真的信息，并将该信息发送到发射机。接收机还可操作以执行自适应均衡以接收由发射机发送的信号。

7. 发明授权

US08471296B2 FinFET fuse with enhanced current crowding 失效
标题翻译： FinFET熔断器具有增强的电流拥挤
公开(公告)号：US08471296B2
公开(公告)日：2013-06-25
申请号：US13011215
申请日：2011-01-21
申请人： Kangguo Cheng , Louis C. Hsu , William R. Tonti , Chih-Chao Yang
发明人： Kangguo Cheng , Louis C. Hsu , William R. Tonti , Chih-Chao Yang
IPC分类号： H01L23/52 , H01L21/326
CPC分类号： H01L23/5256 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A method forms an eFuse structure that has a pair of adjacent semiconducting fins projecting from the planar surface of a substrate (in a direction perpendicular to the planar surface). The fins have planar sidewalls (perpendicular to the planar surface of the substrate) and planar tops (parallel to the planar surface of the substrate). The tops are positioned at distal ends of the fins relative to the substrate. An insulating layer covers the tops and the sidewalls of the fins and covers an intervening substrate portion of the planar surface of the substrate located between the fins. A metal layer covers the insulating layer. A pair of conductive contacts are connected to the metal layer at locations where the metal layer is adjacent the top of the fins.
摘要翻译：一种方法形成eFuse结构，其具有从衬底的平面（垂直于平面的方向）突出的一对相邻半导体翅片。散热片具有平面侧壁（垂直于基板的平面）和平面顶部（平行于基板的平面）。顶部相对于基底定位在翅片的远端。绝缘层覆盖翅片的顶部和侧壁，并且覆盖位于翅片之间的衬底的平面表面的中间衬底部分。金属层覆盖绝缘层。在金属层邻近翅片顶部的位置处，一对导电触头连接到金属层。

8. 发明授权

US08159042B2 Adopting feature of buried electrically conductive layer in dielectrics for electrical anti-fuse application 有权
标题翻译：采用埋入导电层的特征，用于电抗保险丝应用的电介质
公开(公告)号：US08159042B2
公开(公告)日：2012-04-17
申请号：US12144229
申请日：2008-06-23
申请人： Chih-Chao Yang , Lawrence A. Clevenger , Timothy J. Dalton , Nicholas C. Fuller , Louis C. Hsu
发明人： Chih-Chao Yang , Lawrence A. Clevenger , Timothy J. Dalton , Nicholas C. Fuller , Louis C. Hsu
IPC分类号： H01L23/52
CPC分类号： H01L23/5252 , H01L21/76843 , H01L21/76844 , H01L2924/0002 , H01L2924/00
摘要： An anti-fuse structure that included a buried electrically conductive, e.g., metallic layer as an anti-fuse material as well as a method of forming such an anti-fuse structure are provided. According to the present invention, the inventive anti-fuse structure comprises regions of leaky dielectric between interconnects. The resistance between these original interconnects starts decreasing when two adjacent interconnects are biased and causes a time-dependent dielectric breakdown, TDDB, phenomenon to occur. Decreasing of the resistance between adjacent interconnects can also be expedited via increasing the local temperature.
摘要翻译：提供了一种抗熔丝结构，其包括掩埋的导电的，例如作为反熔丝材料的金属层以及形成这种抗熔丝结构的方法。根据本发明，本发明的抗熔丝结构包括互连之间的漏电介质区域。当两个相邻的互连被偏置时，这些原始互连之间的电阻开始减小，并且引起时间依赖介质击穿TDDB现象。也可以通过增加局部温度来加速相邻互连之间的电阻的降低。

9. 发明授权

US08076190B2 Sea-of-fins structure on a semiconductor substrate and method of fabrication 有权
标题翻译：半导体衬底上的海鳍结构和制造方法
公开(公告)号：US08076190B2
公开(公告)日：2011-12-13
申请号：US12535007
申请日：2009-08-04
申请人： Howard H. Chen , Louis C. Hsu , Jack A. Mandelman , Chun-Yung Sung
发明人： Howard H. Chen , Louis C. Hsu , Jack A. Mandelman , Chun-Yung Sung
IPC分类号： H01L21/336 , H01L21/8234
CPC分类号： H01L21/823437 , H01L21/823412 , H01L21/823431 , H01L27/1211 , H01L29/66795 , H01L29/66803 , H01L29/785 , Y10S977/734 , Y10S977/742 , Y10S977/749 , Y10S977/815 , Y10S977/955
摘要： A semiconductor device and a method of fabricating a semiconductor device is disclosed, the method comprises including: forming etching an oxide layer to form a pattern of parallel oxide bars on a substrate; forming nitride spacers on side walls of the parallel oxide bars, with gaps remaining between adjacent nitride spacers; forming silicon pillars in the gaps; removing the nitride spacers to form a plurality of fin bodies; forming an isolation region in between each of the fin bodies; and coating the plurality of fin bodies, the nitride spacers, and the isolation regions with a protective film.
摘要翻译：公开了半导体器件和制造半导体器件的方法，该方法包括：形成蚀刻氧化物层以在衬底上形成平行氧化物条的图案; 在平行氧化物条的侧壁上形成氮化物间隔物，间隙保留在相邻的氮化物间隔物之间; 在间隙中形成硅柱; 去除氮化物间隔件以形成多个翅片体; 在每个翅片体之间形成隔离区域; 并用保护膜涂覆多个翅片体，氮化物间隔物和隔离区域。

10. 发明申请

US20110201199A1 LASER ANNEALING FOR 3-D CHIP INTEGRATION 有权
标题翻译：激光退火三维芯片整合
公开(公告)号：US20110201199A1
公开(公告)日：2011-08-18
申请号：US13093798
申请日：2011-04-25
申请人： Howard H. Chen , Louis C. Hsu , Lawrence S. Mok , J. Campbell Scott
发明人： Howard H. Chen , Louis C. Hsu , Lawrence S. Mok , J. Campbell Scott
IPC分类号： H01L21/268
CPC分类号： H01L21/324 , H01L21/268 , H01L24/01 , H01L25/0657 , H01L27/0688 , H01L2225/06513 , H01L2225/06541 , H01L2924/14 , H01L2924/00
摘要： A laser annealing method for annealing a stacked semiconductor structure having at least two stacked layers is disclosed. A laser beam is focused on a lower layer of the stacked layers. The laser beam is then scanned to anneal features in the lower layer. The laser beam is then focused on an upper layer of the stacked layers, and the laser beam is scanned to anneal features in the upper layer. The laser has a wavelength of less than one micrometer. The beam size, depth of focus, energy dosage, and scan speed of the laser beam are programmable. Features in the lower layer are offset from features in the upper layer such that these features do not overlap along a plane parallel to a path of the laser beam. Each of the stacked layers includes active devices, such as transistors. Also, the first and second layers may be annealed simultaneously.
摘要翻译：公开了一种用于退火具有至少两个堆叠层的层叠半导体结构的激光退火方法。激光束聚焦在堆叠层的下层。然后扫描激光束以退火下层中的特征。然后将激光束聚焦在堆叠层的上层上，并且激光束被扫描以退火上层中的特征。激光器的波长小于1微米。激光束的光束尺寸，焦深，能量投射和扫描速度是可编程的。较低层中的特征偏离上层中的特征，使得这些特征不沿着与激光束的路径平行的平面重叠。堆叠层中的每一个包括诸如晶体管的有源器件。此外，第一层和第二层可以同时退火。

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