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    • 4. 发明授权
    • Front end interface for data receiver
    • 数据接收机的前端接口
    • US07519130B2
    • 2009-04-14
    • US10905705
    • 2005-01-18
    • Louis L. HsuMatt R. Cordrey-GaleJames S. MasonPhilip J. MurfetKarl D. SelanderMichael A. SornaHuihao Xu
    • Louis L. HsuMatt R. Cordrey-GaleJames S. MasonPhilip J. MurfetKarl D. SelanderMichael A. SornaHuihao Xu
    • H04L25/34
    • H04L25/0274H04L25/0296
    • A data receiver is provided which includes a front end interface circuit having an alternating current (AC) transmission receiving mode and a direct current (DC) transmission receiving mode. The front end interface circuit includes an offset compensation circuit operable to compensate a DC voltage offset between a pair of differential signals input to the data receiver. The front end interface circuit further includes an AC/DC selection unit operable to switch between (a) the DC transmission receiving mode, and (b) the AC transmission receiving mode, such that the data receiver is operable in (i) the DC transmission mode in which the offset compensation circuit is disabled, (ii) the DC transmission mode in which the offset compensation circuit is enabled, (iii) the AC transmission mode in which the offset compensation circuit is disabled, and (iv) the AC transmission receiving mode in which the offset compensation circuit is enabled.
    • 提供一种数据接收器,其包括具有交流(AC)发送接收模式和直流(DC)发送接收模式的前端接口电路。 前端接口电路包括偏移补偿电路,其可操作以补偿输入到数据接收器的一对差分信号之间的直流电压偏移。 前端接口电路还包括可操作以在(a)直流发送接收模式和(b)交流发送接收模式之间切换的AC / DC选择单元,使得数据接收器可操作于(i)直流传输 偏移补偿电路被禁用的模式,(ii)使能偏移补偿电路的直流传输模式,(iii)偏移补偿电路被禁用的AC传输模式,以及(iv)AC传输接收 偏移补偿电路使能的模式。
    • 7. 发明授权
    • On-chip electromigration monitoring
    • 片上电迁移监测
    • US07719302B2
    • 2010-05-18
    • US12215732
    • 2008-06-30
    • Louis L. HsuHayden C. Cranford, Jr.Oleg GluschenkovJames S. MasonMichael A. SornaChih-Chao Yang
    • Louis L. HsuHayden C. Cranford, Jr.Oleg GluschenkovJames S. MasonMichael A. SornaChih-Chao Yang
    • G01R31/02
    • G01R31/2858G01R31/2884G01R31/318533
    • A method is provided for monitoring interconnect resistance within a semiconductor chip assembly, A semiconductor chip assembly can include a semiconductor chip having contacts exposed at a surface of the semiconductor chip and a substrate having exposed terminals in conductive communication with the contacts. A plurality of monitored elements of the semiconductor chip can include conductive interconnects, each interconnecting a respective pair of nodes of the semiconductor chip through wiring within the semiconductor chip. In an example of such method, a voltage drop across each monitored element is compared with a reference voltage drop across a respective reference element on the semiconductor chip at a plurality of different times during a lifetime of the semiconductor chip assembly. In that way, it can be detected when a resistance of such monitored element is over threshold. Based on a result of such comparison, a decision can be made whether to indicate an action condition.
    • 提供了一种用于监测半导体芯片组件内的互连电阻的方法。半导体芯片组件可以包括具有在半导体芯片的表面处露出的触点的半导体芯片和具有与触点导电连通的露出端子的基板。 半导体芯片的多个受监测元件可以包括导电互连,每个导体互连通过半导体芯片内的布线互连半导体芯片的相应的一对节点。 在这种方法的示例中,在半导体芯片组件的寿命期间,跨越每个被监测元件的电压降与在半导体芯片上的相应参考元件上的参考电压降在多个不同时间进行比较。 以这种方式,当这种被监视的元件的电阻超过阈值时,可以检测它。 基于这种比较的结果,可以做出是否指示动作条件的决定。
    • 9. 发明申请
    • On-chip electromigration monitoring
    • 片上电迁移监测
    • US20080265931A1
    • 2008-10-30
    • US12215732
    • 2008-06-30
    • Louis L. HsuHayden C. CranfordOleg GluschenkovJames S. MasonMichael A. SornaChih-Chao Yang
    • Louis L. HsuHayden C. CranfordOleg GluschenkovJames S. MasonMichael A. SornaChih-Chao Yang
    • G01R31/26
    • G01R31/2858G01R31/2884G01R31/318533
    • A method is provided for monitoring interconnect resistance within a semiconductor chip assembly. A semiconductor chip assembly can include a semiconductor chip having contacts exposed at a surface of the semiconductor chip and a substrate having exposed terminals in conductive communication with the contacts. A plurality of monitored elements of the semiconductor chip can include conductive interconnects, each interconnecting a respective pair of nodes of the semiconductor chip through wiring within the semiconductor chip. In an example of such method, a voltage drop across each monitored element is compared with a reference voltage drop across a respective reference element on the semiconductor chip at a plurality of different times during a lifetime of the semiconductor chip assembly. In that way, it can be detected when a resistance of such monitored element is over threshold. Based on a result of such comparison, a decision can be made whether to indicate an action condition.
    • 提供了一种用于监测半导体芯片组件内的互连电阻的方法。 半导体芯片组件可以包括具有暴露在半导体芯片的表面处的触点的半导体芯片和具有与触点导电连通的暴露端子的基板。 半导体芯片的多个受监测元件可以包括导电互连,每个导体互连通过半导体芯片内的布线互连半导体芯片的相应的一对节点。 在这种方法的示例中,在半导体芯片组件的寿命期间,跨越每个被监测元件的电压降与在半导体芯片上的相应参考元件上的参考电压降在多个不同时间进行比较。 以这种方式,当这种被监视的元件的电阻超过阈值时,可以检测它。 基于这种比较的结果,可以做出是否指示动作条件的决定。
    • 10. 发明授权
    • On-chip electromigration monitoring system
    • 片上电迁移监控系统
    • US07394273B2
    • 2008-07-01
    • US11306985
    • 2006-01-18
    • Louis L. HsuHayden C. Cranford, Jr.Oleg GluschenkovJames S. MasonMichael A. SornaChih-Chao Yang
    • Louis L. HsuHayden C. Cranford, Jr.Oleg GluschenkovJames S. MasonMichael A. SornaChih-Chao Yang
    • G01R31/02
    • G01R31/2858G01R31/2884G01R31/318533
    • A packaged semiconductor chip is provided which includes a semiconductor chip and a package element. The semiconductor chip includes a plurality of semiconductor devices and a plurality of conductive features disposed at an exterior face of the semiconductor chip. The package element has a plurality of external features conductively connected to the plurality of conductive features of the semiconductor chip. The semiconductor chip includes a monitored element including a conductive interconnect that conductively interconnects a first node of the semiconductor chip to a second node of the semiconductor chip. A detection circuit in the semiconductor chip is operable to compare a variable voltage drop across the monitored element with a reference voltage drop across a reference element on the chip at a plurality of different times during a lifetime of the packaged semiconductor chip so as to detect when the resistance of the monitored element is over threshold.
    • 提供一种封装的半导体芯片,其包括半导体芯片和封装元件。 半导体芯片包括多个半导体器件和设置在半导体芯片的外表面处的多个导电特征。 封装元件具有导电连接到半导体芯片的多个导电特征的多个外部特征。 半导体芯片包括被监视的元件,该元件包括将半导体芯片的第一节点与半导体芯片的第二节点导电互连的导电互连。 半导体芯片中的检测电路可操作以在封装的半导体芯片的寿命期间的多个不同时间将所监视的元件上的可变电压降与芯片上的参考元件上的参考电压降进行比较,以便检测何时 被监测元件的电阻超过阈值。