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1. 发明授权

US5326985A Bipolar doped semiconductor structure and method for making 失效
标题翻译：双极掺杂半导体结构及其制造方法
公开(公告)号：US5326985A
公开(公告)日：1994-07-05
申请号：US951994
申请日：1992-09-28
申请人： Herbert Goronkin , Jun Shen , Saied N. Tehrani
发明人： Herbert Goronkin , Jun Shen , Saied N. Tehrani
IPC分类号： H01L29/778 , H01L29/161 , H01L29/205
CPC分类号： H01L29/7783
摘要： A semiconductor structure that provides both N-type and P-type doping from a single dopant source is provided. A first doping region (13) comprising a first material composition includes holes and electrons in a doping energy level (E.sub.D)- A first undoped spacer region (12) comprising the first material composition covers the doping region (13). An undoped channel (11,14) comprising a second material composition covers the first spacer region (12) and a second undoped spacer region (12) comprising the first material composition covers the undoped channel (11,14). The first material composition has a wider bandgap than the second material composition and the doping energy level (E.sub.D) is selected to provide electrons to the undoped channel (11,14) when the second material composition has a conduction band minimum less than the doping energy level (E.sub.D) and to provide holes to the first undoped channel (11,14) when the second material composition has a valence band maximum greater than the doping energy level (E.sub.D).
摘要翻译：提供了从单个掺杂剂源提供N型和P型掺杂的半导体结构。包括第一材料组合物的第一掺杂区域（13）包括掺杂能级（ED）的空穴和电子 - 包含第一材料组合物的第一未掺杂间隔区域（12）覆盖掺杂区域（13）。包括第二材料组合物的未掺杂通道（11,14）覆盖第一间隔区域（12），并且包括第一材料组合物的第二未掺杂间隔区域（12）覆盖未掺杂沟道（11,14）。第一材料组合物具有比第二材料组成更宽的带隙，并且当第二材料组合物具有小于掺杂能量的导带最小值时，选择掺杂能级（ED）以向未掺杂沟道（11,14）提供电子（ED），并且当第二材料组合物具有大于掺杂能级（ED）的价带最大值时，向第一未掺杂通道（11,14）提供孔。

2. 发明授权

US5349214A Complementary heterojunction device 失效
标题翻译：互补异质结装置
公开(公告)号：US5349214A
公开(公告)日：1994-09-20
申请号：US119554
申请日：1993-09-13
申请人： Saied N. Tehrani , X. Theodore Zhu , Herbert Goronkin , Jun Shen
发明人： Saied N. Tehrani , X. Theodore Zhu , Herbert Goronkin , Jun Shen
IPC分类号： H01L29/80 , H01L27/06 , H01L27/092 , H01L27/095 , H01L27/088 , H01L27/105 , H01L31/06
CPC分类号： H01L27/0605 , H01L27/092 , Y10S148/015 , Y10S148/072 , Y10S148/16
摘要： A heterojunction device including a first semiconductive layer on a substrate, a barrier layer on the first layer, a second semiconductive layer on the barrier layer and a multi-layer cap, on the second semiconductive layer. First and second gates positioned on layers of the cap to define first and second transistors, with the cap layers being selected and etched to pin the Fermi level in a first transistor conduction channel in the second semiconductive layer such that the number of carriers in the first conduction channel are substantially less than the number of carriers in surrounding portions of the second semiconductive layer and the Fermi level in a second transistor conduction channel in the first semiconductive layer such that the number of carriers in the second conduction channel are substantially less than the number of carriers in surrounding portions of the first semiconductive layer.
摘要翻译：一种异质结装置，在第二半导体层上包括衬底上的第一半导体层，第一层上的阻挡层，阻挡层上的第二半导体层和多层帽。位于盖的层上的第一和第二栅极限定第一和第二晶体管，其中盖层被选择和蚀刻以在第二半导体层中的第一晶体管导通通道中引导费米能级，使得第一和第二晶体管中的载流子数目传导通道基本上小于第一半导体层中的第二半导体层的周围部分中的载流子数量和第二晶体管传导通道中的费米能级数，使得第二导电通道中的载流子数目基本上小于数量在第一半导体层的周围部分的载体。

3. 发明授权

US5294809A Resonant tunneling diode with reduced valley current 失效
标题翻译：谐振隧道二极管具有减小的谷电流
公开(公告)号：US5294809A
公开(公告)日：1994-03-15
申请号：US65338
申请日：1993-05-24
申请人： Herbert Goronkin , Saied N. Tehrani , Jun Shen , Xiaodong T. Zhu
发明人： Herbert Goronkin , Saied N. Tehrani , Jun Shen , Xiaodong T. Zhu
IPC分类号： H01L29/88
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/882
摘要： A resonant tunneling diode having a quantum well sandwiched between first and second tunnel barrier layers and the quantum well and tunnel barrier layers sandwiched between an injection layer and a collector layer. The improvement includes a relatively thin layer of semiconductor material sandwiched between either the first tunnel barrier layer and the injection layer or the first tunnel barrier layer and the quantum well. The thin semiconductor layer has a valence band with an energy level lower than the valence band of the first tunnel barrier layer so as to prevent minority carriers from travelling toward the injection layer.
摘要翻译：一种谐振隧道二极管，其具有夹在第一和第二隧道势垒层之间的量子阱以及夹在注入层和集电极层之间的量子阱和隧道势垒层。该改进包括夹在第一隧道势垒层和注入层之间的相对薄的半导体材料层或第一隧道势垒层和量子阱。薄半导体层具有能级低于第一隧道势垒层的价带的价带，以防止少数载流子朝向注入层行进。

4. 发明授权

US5477169A Logic circuit with negative differential resistance device 失效
标题翻译：具有负差分电阻器件的逻辑电路
公开(公告)号：US5477169A
公开(公告)日：1995-12-19
申请号：US261799
申请日：1994-06-20
申请人： Jun Shen , Herbert Goronkin , Saied N. Tehrani
发明人： Jun Shen , Herbert Goronkin , Saied N. Tehrani
IPC分类号： H01L21/822 , G11C5/14 , H01L27/04 , H01L29/06 , H01L29/66 , H01L29/86 , H01L29/88 , H03K19/094 , H03K19/0944 , H03K19/10 , H03K19/21 , G06F7/50
CPC分类号： G11C5/142 , H03K19/094 , H03K19/10 , H03K19/215
摘要： A logic circuit including a pair of FETs connected in parallel and including first and second common current terminals, each of the FETs further having a control terminal connected to receive a logic signal thereon. A negative differential resistance device affixed to one of the first and second common current terminals and having a conductance characteristic such that the device operates at a peak current when one of the FETs is turned ON and at a valley current when both of the FETs are simultaneously turned ON. A load resistance coupled to the other of the first and second common current terminals and providing an output for the logic circuit.
摘要翻译：一种逻辑电路，包括并联连接并包括第一和第二公共电流端子的一对FET，每个FET还具有连接以在其上接收逻辑信号的控制端子。固定在第一和第二公共电流端子中的一个并具有电导特性的负差分电阻器件，使得器件在FET中的一个导通时以峰值电流工作，并且当两个FET同时处于谷值电流时工作打开。负载电阻耦合到第一和第二公共电流端子中的另一个，并提供逻辑电路的输出。

5. 发明授权

US5552330A Resonant tunneling fet and methods of fabrication 失效
标题翻译：谐振隧道和制造方法
公开(公告)号：US5552330A
公开(公告)日：1996-09-03
申请号：US386171
申请日：1995-02-09
申请人： Saied N. Tehrani , Herbert Goronkin , Jun Shen , Xiaodong T. Zhu
发明人： Saied N. Tehrani , Herbert Goronkin , Jun Shen , Xiaodong T. Zhu
IPC分类号： H01L29/68 , H01L21/20 , H01L21/334 , H01L27/06 , H01L29/205 , H01L29/76 , H01L21/265 , H01L21/44
CPC分类号： B82Y30/00 , B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02466 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L27/0605 , H01L29/66939 , H01L29/7606
摘要： A resonant tunneling FET including a heterostructure FET with a channel layer having a first current contact and a control contact operatively coupled thereto and a resonant tunneling device, including a quantum well layer sandwiched between barrier layers with a resonant tunneling layer affixed to an opposite side of one barrier layer, operably affixed to the heterostructure FET to form a second current contact. The resonant tunneling FET being constructed from a material system which allows the fabrication of additional devices on the same substrate.
摘要翻译：一种谐振隧穿FET，其包括具有第一电流接触的通道层和可操作地耦合到其上的控制触点的异质结构FET，以及谐振隧穿装置，其包括夹在阻挡层之间的量子阱层，其中谐振隧穿层固定在一个阻挡层，可操作地固定到异质结构FET以形成第二电流接触。谐振隧道FET由材料系统构成，其允许在同一衬底上制造附加器件。

6. 发明授权

US5489785A Band-to-band resonant tunneling transistor 失效
标题翻译：带对带谐振隧道晶体管
公开(公告)号：US5489785A
公开(公告)日：1996-02-06
申请号：US209789
申请日：1994-03-11
申请人： Saied N. Tehrani , Jun Shen , Herbert Goronkin , Xiaodong T. Zhu
发明人： Saied N. Tehrani , Jun Shen , Herbert Goronkin , Xiaodong T. Zhu
IPC分类号： H01L29/68 , H01L29/06 , H01L29/205 , H01L29/737 , H01L27/12
CPC分类号： H01L29/7376 , B82Y10/00
摘要： A band-to-band resonant tunneling transistor including GaSb and InAs resonant tunneling layers separated by a thin barrier layer and a second InAs layer separated from the GaSb layer by another thin barrier layer. A terminal on the InAs resonant tunneling layer and a terminal on the second InAs layer. Leakage current reduction layers are positioned on the second InAs layer with a bias terminal positioned thereon. The InAs resonant tunneling layer has a plurality of quantized states which are misaligned with the ground state of the GaSb layer in a quiescent state, each of the quantized states of the InAs resonant tunneling layer are movable into alignment with the ground state of the GaSb layer to provide current flow through the transistor with the application of a specific potential to the terminal on the second InAs layer.
摘要翻译：包括GaSb和InAs谐振隧道层的带对带谐振隧穿晶体管，其由薄的阻挡层和由另一个薄的阻挡层与GaSb层分离的第二InAs层隔开。 InAs谐振隧穿层上的一个端子和第二个InAs层上的一个端子。漏电流减少层位于第二InAs层上，偏置端子位于其上。 InAs谐振隧穿层具有与处于静止状态的GaSb层的基态不对准的多个量化状态，InAs谐振隧穿层的每个量子化状态可移动地与GaSb层的基态对准以通过向第二InAs层上的端子施加特定电位来提供流过晶体管的电流。

7. 发明授权

US5427965A Method of fabricating a complementary heterojunction FET 失效
标题翻译：制造互补异质结FET的方法
公开(公告)号：US5427965A
公开(公告)日：1995-06-27
申请号：US262292
申请日：1994-06-20
申请人： Saied N. Tehrani , X. T. Zhu , Herbert Goronkin , Jun Shen
发明人： Saied N. Tehrani , X. T. Zhu , Herbert Goronkin , Jun Shen
IPC分类号： H01L29/80 , H01L27/06 , H01L27/092 , H01L27/095 , H01L21/265 , H01L21/20
CPC分类号： H01L27/0605 , H01L27/092 , Y10S148/015 , Y10S148/072 , Y10S148/16
摘要： A heterojunction device including a first semiconductive layer on a substrate, a barrier layer on the first layer, a second semiconductive layer on the barrier layer and a multi-layer cap, on the second semiconductive layer. First and second gates positioned on layers of the cap to define first and second transistors, with the cap layers being selected and etched to pin the Fermi level in a first transistor conduction channel in the second semiconductive layer such that the number of carriers in the first conduction channel are substantially less than the number of carriers in surrounding portions of the second semiconductive layer and the Fermi level in a second transistor conduction channel in the first semiconductive layer such that the number of carriers in the second conduction channel are substantially less than the number of carriers in surrounding portions of the first semiconductive layer.
摘要翻译：一种异质结装置，在第二半导体层上包括衬底上的第一半导体层，第一层上的阻挡层，阻挡层上的第二半导体层和多层帽。位于盖的层上的第一和第二栅极限定第一和第二晶体管，其中盖层被选择和蚀刻以在第二半导体层中的第一晶体管导通通道中引导费米能级，使得第一和第二晶体管中的载流子数目传导通道基本上小于第一半导体层中的第二半导体层的周围部分中的载流子数量和第二晶体管传导通道中的费米能级数，使得第二导电通道中的载流子数目基本上小于数量在第一半导体层的周围部分的载体。

8. 发明授权

US5410160A Interband tunneling field effect transistor 失效
标题翻译：带间隧道场效应晶体管
公开(公告)号：US5410160A
公开(公告)日：1995-04-25
申请号：US894963
申请日：1992-06-08
申请人： Herbert Goronkin , Jun Shen , Saied N. Tehrani , X. Theodore Zhu
发明人： Herbert Goronkin , Jun Shen , Saied N. Tehrani , X. Theodore Zhu
IPC分类号： H01L29/80 , H01L29/739 , H01L29/772 , H01L29/161 , H01L29/205 , H01L29/225
CPC分类号： H01L29/772 , H01L29/739
摘要： A field effect semiconductor device having multiple vertically stacked channels (12, 14, 16) separated by barrier layers comprising wide bandgap material (18) is provided. The channels (12, 14, 16) are formed on a wide bandgap buffer layer (11) and each channel is coupled a P-type drain region (22b). Each channel is also coupled to an N-type source region (25b). With appropriate gate bias on a gate electrode (17), quantized energy levels in the channels (12, 14, 16) are aligned providing peak current flow by electrons tunneling from the conduction band of one or more N-channels (12, 16) to the valence band of the P-channel (14).
摘要翻译：提供了具有由包括宽带隙材料（18）的阻挡层分开的多个垂直堆叠通道（12,14,16）的场效应半导体器件。通道（12,14,16）形成在宽带隙缓冲层（11）上，每个通道耦合有P型漏极区域（22b）。每个通道也耦合到N型源极区域（25b）。在栅电极（17）上具有适当的栅极偏置，通道（12,14,16）中的量化能级对齐，从一个或多个N沟道（12,16）的导带隧穿的电子提供峰值电流，到P沟道（14）的价带。

9. 发明授权

US5298441A Method of making high transconductance heterostructure field effect transistor 失效
标题翻译：制造高跨导异质结场场效应晶体管的方法
公开(公告)号：US5298441A
公开(公告)日：1994-03-29
申请号：US709741
申请日：1991-06-03
申请人： Herbert Goronkin , Jun Shen , Saied N. Tehrani , X. Theodore Zhu
发明人： Herbert Goronkin , Jun Shen , Saied N. Tehrani , X. Theodore Zhu
IPC分类号： H01L29/772 , H01L21/265
CPC分类号： H01L29/7725 , Y10S148/097
摘要： A high transconductance HFET (21) utilizes nonalloy semiconductor materials (26) to form a strained channel layer (26) that has a deep quantum well (38). The materials utilized for layers adjacent to the channel layer (26) apply strain to the channel layer (26) and create an excess of high mobility carriers in the channel layer (26). The materials also form a deep quantum well (38) that confines the high mobility carriers to the channel (26). The high mobility carriers and the high confinement provide an HFET (21) that has high transconductance, high frequency response, and sharp pinch-off characteristics.
摘要翻译：高跨导HFET（21）利用非合金半导体材料（26）形成具有深量子阱（38）的应变通道层（26）。用于与沟道层（26）相邻的层的材料对沟道层（26）施加应变，并在沟道层（26）中产生过量的高迁移率载流子。这些材料还形成将高迁移率载流子限制到通道（26）的深量子阱（38）。高迁移率载流子和高限制性提供了具有高跨导，高频响应和清晰夹断特性的HFET（21）。

10. 发明授权

US5563087A Method of fabricating InAs/GaSb/AlSb material system SRAM 失效
标题翻译：制造InAs / GaSb / AlSb材料系统SRAM的方法
公开(公告)号：US5563087A
公开(公告)日：1996-10-08
申请号：US494465
申请日：1995-06-26
申请人： Jun Shen , Saied N. Tehrani , Herbert Goronkin , Xiaodong T. Zhu
发明人： Jun Shen , Saied N. Tehrani , Herbert Goronkin , Xiaodong T. Zhu
IPC分类号： H01L21/8244 , H01L27/11 , H01L21/70 , H01L27/00
CPC分类号： B82Y30/00 , B82Y10/00 , H01L27/11 , Y10S438/979
摘要： An SRAM including first and second RITDs each formed with a heterostructure including a GaSb active layer sandwiched between AlSb barrier layers, which are sandwiched between InAs layers with each RITD having a contact connected to a first of the InAs layers. A TD including an AlSb layer sandwiched between InAS layers. A second InAs layer for each of the RITDs being integrally formed with a first InAs layer of the TD and a read/write terminal connected to a second InAs layer of the TD.
摘要翻译：一种包括第一和第二RITD的SRAM，每个RITD均形成有异质结构，该异质结构包括夹在AlSb阻挡层之间的GaSb活性层，它们夹在InAs层之间，每个RITD具有连接到第一InAs层的触点。包括夹在InAS层之间的AlSb层的TD。用于与TD的第一InAs层整体形成的每个RITD的第二InAs层和连接到TD的第二InAs层的读/写端子。

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