专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5294809A Resonant tunneling diode with reduced valley current 失效
标题翻译：谐振隧道二极管具有减小的谷电流
公开(公告)号：US5294809A
公开(公告)日：1994-03-15
申请号：US65338
申请日：1993-05-24
申请人： Herbert Goronkin , Saied N. Tehrani , Jun Shen , Xiaodong T. Zhu
发明人： Herbert Goronkin , Saied N. Tehrani , Jun Shen , Xiaodong T. Zhu
IPC分类号： H01L29/88
CPC分类号： B82Y30/00 , B82Y10/00 , H01L29/882
摘要： A resonant tunneling diode having a quantum well sandwiched between first and second tunnel barrier layers and the quantum well and tunnel barrier layers sandwiched between an injection layer and a collector layer. The improvement includes a relatively thin layer of semiconductor material sandwiched between either the first tunnel barrier layer and the injection layer or the first tunnel barrier layer and the quantum well. The thin semiconductor layer has a valence band with an energy level lower than the valence band of the first tunnel barrier layer so as to prevent minority carriers from travelling toward the injection layer.
摘要翻译：一种谐振隧道二极管，其具有夹在第一和第二隧道势垒层之间的量子阱以及夹在注入层和集电极层之间的量子阱和隧道势垒层。该改进包括夹在第一隧道势垒层和注入层之间的相对薄的半导体材料层或第一隧道势垒层和量子阱。薄半导体层具有能级低于第一隧道势垒层的价带的价带，以防止少数载流子朝向注入层行进。

2. 发明授权

US5552330A Resonant tunneling fet and methods of fabrication 失效
标题翻译：谐振隧道和制造方法
公开(公告)号：US5552330A
公开(公告)日：1996-09-03
申请号：US386171
申请日：1995-02-09
申请人： Saied N. Tehrani , Herbert Goronkin , Jun Shen , Xiaodong T. Zhu
发明人： Saied N. Tehrani , Herbert Goronkin , Jun Shen , Xiaodong T. Zhu
IPC分类号： H01L29/68 , H01L21/20 , H01L21/334 , H01L27/06 , H01L29/205 , H01L29/76 , H01L21/265 , H01L21/44
CPC分类号： B82Y30/00 , B82Y10/00 , H01L21/02395 , H01L21/02463 , H01L21/02466 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L27/0605 , H01L29/66939 , H01L29/7606
摘要： A resonant tunneling FET including a heterostructure FET with a channel layer having a first current contact and a control contact operatively coupled thereto and a resonant tunneling device, including a quantum well layer sandwiched between barrier layers with a resonant tunneling layer affixed to an opposite side of one barrier layer, operably affixed to the heterostructure FET to form a second current contact. The resonant tunneling FET being constructed from a material system which allows the fabrication of additional devices on the same substrate.
摘要翻译：一种谐振隧穿FET，其包括具有第一电流接触的通道层和可操作地耦合到其上的控制触点的异质结构FET，以及谐振隧穿装置，其包括夹在阻挡层之间的量子阱层，其中谐振隧穿层固定在一个阻挡层，可操作地固定到异质结构FET以形成第二电流接触。谐振隧道FET由材料系统构成，其允许在同一衬底上制造附加器件。

3. 发明授权

US5489785A Band-to-band resonant tunneling transistor 失效
标题翻译：带对带谐振隧道晶体管
公开(公告)号：US5489785A
公开(公告)日：1996-02-06
申请号：US209789
申请日：1994-03-11
申请人： Saied N. Tehrani , Jun Shen , Herbert Goronkin , Xiaodong T. Zhu
发明人： Saied N. Tehrani , Jun Shen , Herbert Goronkin , Xiaodong T. Zhu
IPC分类号： H01L29/68 , H01L29/06 , H01L29/205 , H01L29/737 , H01L27/12
CPC分类号： H01L29/7376 , B82Y10/00
摘要： A band-to-band resonant tunneling transistor including GaSb and InAs resonant tunneling layers separated by a thin barrier layer and a second InAs layer separated from the GaSb layer by another thin barrier layer. A terminal on the InAs resonant tunneling layer and a terminal on the second InAs layer. Leakage current reduction layers are positioned on the second InAs layer with a bias terminal positioned thereon. The InAs resonant tunneling layer has a plurality of quantized states which are misaligned with the ground state of the GaSb layer in a quiescent state, each of the quantized states of the InAs resonant tunneling layer are movable into alignment with the ground state of the GaSb layer to provide current flow through the transistor with the application of a specific potential to the terminal on the second InAs layer.
摘要翻译：包括GaSb和InAs谐振隧道层的带对带谐振隧穿晶体管，其由薄的阻挡层和由另一个薄的阻挡层与GaSb层分离的第二InAs层隔开。 InAs谐振隧穿层上的一个端子和第二个InAs层上的一个端子。漏电流减少层位于第二InAs层上，偏置端子位于其上。 InAs谐振隧穿层具有与处于静止状态的GaSb层的基态不对准的多个量化状态，InAs谐振隧穿层的每个量子化状态可移动地与GaSb层的基态对准以通过向第二InAs层上的端子施加特定电位来提供流过晶体管的电流。

4. 发明授权

US5563087A Method of fabricating InAs/GaSb/AlSb material system SRAM 失效
标题翻译：制造InAs / GaSb / AlSb材料系统SRAM的方法
公开(公告)号：US5563087A
公开(公告)日：1996-10-08
申请号：US494465
申请日：1995-06-26
申请人： Jun Shen , Saied N. Tehrani , Herbert Goronkin , Xiaodong T. Zhu
发明人： Jun Shen , Saied N. Tehrani , Herbert Goronkin , Xiaodong T. Zhu
IPC分类号： H01L21/8244 , H01L27/11 , H01L21/70 , H01L27/00
CPC分类号： B82Y30/00 , B82Y10/00 , H01L27/11 , Y10S438/979
摘要： An SRAM including first and second RITDs each formed with a heterostructure including a GaSb active layer sandwiched between AlSb barrier layers, which are sandwiched between InAs layers with each RITD having a contact connected to a first of the InAs layers. A TD including an AlSb layer sandwiched between InAS layers. A second InAs layer for each of the RITDs being integrally formed with a first InAs layer of the TD and a read/write terminal connected to a second InAs layer of the TD.
摘要翻译：一种包括第一和第二RITD的SRAM，每个RITD均形成有异质结构，该异质结构包括夹在AlSb阻挡层之间的GaSb活性层，它们夹在InAs层之间，每个RITD具有连接到第一InAs层的触点。包括夹在InAS层之间的AlSb层的TD。用于与TD的第一InAs层整体形成的每个RITD的第二InAs层和连接到TD的第二InAs层的读/写端子。

5. 发明授权

US5414274A Quantum multifunction transistor with gated tunneling region 失效
标题翻译：量子多功能晶体管与门控隧道区
公开(公告)号：US5414274A
公开(公告)日：1995-05-09
申请号：US96387
申请日：1993-07-26
申请人： Herbert Goronkin , Saied N. Tehrani , Jun Shen , Xiaodong T. Zhu
发明人： Herbert Goronkin , Saied N. Tehrani , Jun Shen , Xiaodong T. Zhu
IPC分类号： H01L29/06 , H01L29/68 , H01L29/772 , H01L29/205 , H01L29/88
CPC分类号： H01L29/772
摘要： A quantum multifunction transistor including a plurality of conduction layers of semiconductor material with a tunnel barrier layer sandwiched therebetween. The conduction layers each being very thin to form discrete energy levels, and the material being chosen so that discrete energy levels therein are not aligned across the tunnel barrier layer in an equilibrium state. A gate coupled to a portion of one of the conduction layers for aligning, in response to a voltage applied thereto, discrete energy levels in the conduction layers across the tunnel barrier layer, whereby majority carrier current flows through the transistor. Application of a higher voltage to the gate results in minority carrier current flow through the transistor.
摘要翻译：一种量子多功能晶体管，包括多个导电层的半导体材料，其间夹有隧道势垒层。导电层各自非常薄以形成离散的能级，并且选择材料使得其中的离散能级在平衡状态下不跨越隧道势垒层对准。耦合到导电层之一的一部分的栅极，用于响应于施加到其上的电压，对准穿过隧道势垒层的导电层中的离散能级，从而多数载流子流过晶体管。向栅极施加较高的电压导致少数载流子流过晶体管。

6. 发明授权

US5920500A Magnetic random access memory having stacked memory cells and fabrication method therefor 失效
标题翻译：具有堆叠存储单元的磁性随机存取存储器及其制造方法
公开(公告)号：US5920500A
公开(公告)日：1999-07-06
申请号：US702781
申请日：1996-08-23
申请人： Saied N. Tehrani , Xiaodong T. Zhu , Eugene Chen , Herbert Goronkin
发明人： Saied N. Tehrani , Xiaodong T. Zhu , Eugene Chen , Herbert Goronkin
IPC分类号： G11C11/15 , G11C11/14 , H01L21/8246 , H01L27/105 , H01L27/22 , H01L43/08
CPC分类号： G11C11/14 , H01L27/222
摘要： A magnetic random access memory (10) has a plurality of stacked memory cells on semiconductor substrate (11), each cell basically having a portion of magnetic material (12), a word line (13), and sense line (14). Upper sense line (22) is electrically coupled to lower sense line (12) via conductor line (23) with ohmic contacts. In order to read and store states in the memory cell, lower and upper word lines (13, 18) are activated, thereby total magnetic field is applied to portion of magnetic material (11). This stacked memory structure allows magnetic random access memory (10) to integrate more memory cells on semiconductor substrate (11).
摘要翻译：磁性随机存取存储器（10）在半导体衬底（11）上具有多个堆叠的存储单元，每个单元基本上具有一部分磁性材料（12），字线（13）和感测线（14）。上感测线（22）经由导体线（23）与欧姆接触电耦合到下感测线（12）。为了读取和存储存储单元中的状态，上下文字线（13,18）被激活，从而将总磁场施加到磁性材料（11）的一部分。这种堆叠式存储器结构允许磁性随机存取存储器（10）将更多的存储器单元集成在半导体衬底（11）上。

7. 发明授权

US5978257A Multi-layer magnet tunneling junction memory cells 失效
标题翻译：多层磁铁隧道结存储单元
公开(公告)号：US5978257A
公开(公告)日：1999-11-02
申请号：US28426
申请日：1998-02-24
申请人： Xiaodong T. Zhu , Herbert Goronkin , Saied N. Tehrani
发明人： Xiaodong T. Zhu , Herbert Goronkin , Saied N. Tehrani
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , H01L21/8246
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , G11C2211/5615 , G11C2211/5616
摘要： A multi-state, multi-layer magnetic memory cell including a first conductor, a first magnetic layer contacting the first conductor, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, a second conductor contacting the second magnetic layer, and a word line adjacent, or in contact with, the cell so as to provide a magnetic field to partially switch magnetic vectors along the length of the first magnetic layer. Information is stored by passing one current through the word line and a second current through the first and second conductors sufficient to switch vectors in the first and second magnetic layers. Sensing is accomplished by passing a read current through a word line sufficient to switch one layer (and not the other) and a sense current through the cell, by way of the first and second conductors, and measuring a resistance across the cell.
摘要翻译：一种多态多层磁存储单元，包括第一导体，与第一导体接触的第一磁性层，第一磁性层上的绝缘层，绝缘层上的第二磁性层，与第二磁性体接触的第二导体层，以及与单元相邻或接触的字线，以便提供磁场以沿着第一磁性层的长度部分地切换磁矢量。通过使一条电流通过字线并通过第一和第二导体的第二电流足以切换第一和第二磁性层中的矢量来存储信息。通过使读取电流通过足以通过第一和第二导体切换一层（而不是另一层）和感测电流通过电池的读取电流，并测量电池两端的电阻来实现感测。

8. 发明授权

US5734605A Multi-layer magnetic tunneling junction memory cells 失效
标题翻译：多层磁隧道结记忆单元
公开(公告)号：US5734605A
公开(公告)日：1998-03-31
申请号：US711751
申请日：1996-09-10
申请人： Xiaodong T. Zhu , Herbert Goronkin , Saied N. Tehrani
发明人： Xiaodong T. Zhu , Herbert Goronkin , Saied N. Tehrani
IPC分类号： G11C11/15 , G11C11/16 , G11C11/56 , H01L21/8246
CPC分类号： H01L27/228 , B82Y10/00 , G11C11/15 , G11C11/16 , G11C11/5607 , H01L27/224 , G11C2211/5615 , G11C2211/5616
摘要： A multi-state, multi-layer magnetic memory cell including a first conductor, a first magnetic layer contacting the first conductor, an insulating layer on the first magnetic layer, a second magnetic layer on the insulating layer, a second conductor contacting the second magnetic layer, and a word line adjacent, or in contact with, the cell so as to provide a magnetic field to partially switch magnetic vectors along the length of the first magnetic layer. Information is stored by passing one current through the word line and a second current through the first and second conductors sufficient to switch vectors in the first and second magnetic layers. Sensing is accomplished by passing a read current through a word line sufficient to switch one layer (and not the other) and a sense current through the cell, by way of the first and second conductors, and measuring a resistance across the cell.
摘要翻译：一种多态多层磁存储单元，包括第一导体，与第一导体接触的第一磁性层，第一磁性层上的绝缘层，绝缘层上的第二磁性层，与第二磁性体接触的第二导体层，以及与单元相邻或接触的字线，以便提供磁场以沿着第一磁性层的长度部分地切换磁矢量。通过使一条电流通过字线并通过第一和第二导体的第二电流足以切换第一和第二磁性层中的矢量来存储信息。通过使读取电流通过足以通过第一和第二导体切换一层（而不是另一层）和感测电流通过电池的读取电流，并测量电池两端的电阻来实现感测。

9. 发明授权

US5326985A Bipolar doped semiconductor structure and method for making 失效
标题翻译：双极掺杂半导体结构及其制造方法
公开(公告)号：US5326985A
公开(公告)日：1994-07-05
申请号：US951994
申请日：1992-09-28
申请人： Herbert Goronkin , Jun Shen , Saied N. Tehrani
发明人： Herbert Goronkin , Jun Shen , Saied N. Tehrani
IPC分类号： H01L29/778 , H01L29/161 , H01L29/205
CPC分类号： H01L29/7783
摘要： A semiconductor structure that provides both N-type and P-type doping from a single dopant source is provided. A first doping region (13) comprising a first material composition includes holes and electrons in a doping energy level (E.sub.D)- A first undoped spacer region (12) comprising the first material composition covers the doping region (13). An undoped channel (11,14) comprising a second material composition covers the first spacer region (12) and a second undoped spacer region (12) comprising the first material composition covers the undoped channel (11,14). The first material composition has a wider bandgap than the second material composition and the doping energy level (E.sub.D) is selected to provide electrons to the undoped channel (11,14) when the second material composition has a conduction band minimum less than the doping energy level (E.sub.D) and to provide holes to the first undoped channel (11,14) when the second material composition has a valence band maximum greater than the doping energy level (E.sub.D).
摘要翻译：提供了从单个掺杂剂源提供N型和P型掺杂的半导体结构。包括第一材料组合物的第一掺杂区域（13）包括掺杂能级（ED）的空穴和电子 - 包含第一材料组合物的第一未掺杂间隔区域（12）覆盖掺杂区域（13）。包括第二材料组合物的未掺杂通道（11,14）覆盖第一间隔区域（12），并且包括第一材料组合物的第二未掺杂间隔区域（12）覆盖未掺杂沟道（11,14）。第一材料组合物具有比第二材料组成更宽的带隙，并且当第二材料组合物具有小于掺杂能量的导带最小值时，选择掺杂能级（ED）以向未掺杂沟道（11,14）提供电子（ED），并且当第二材料组合物具有大于掺杂能级（ED）的价带最大值时，向第一未掺杂通道（11,14）提供孔。

10. 发明授权

US5477169A Logic circuit with negative differential resistance device 失效
标题翻译：具有负差分电阻器件的逻辑电路
公开(公告)号：US5477169A
公开(公告)日：1995-12-19
申请号：US261799
申请日：1994-06-20
申请人： Jun Shen , Herbert Goronkin , Saied N. Tehrani
发明人： Jun Shen , Herbert Goronkin , Saied N. Tehrani
IPC分类号： H01L21/822 , G11C5/14 , H01L27/04 , H01L29/06 , H01L29/66 , H01L29/86 , H01L29/88 , H03K19/094 , H03K19/0944 , H03K19/10 , H03K19/21 , G06F7/50
CPC分类号： G11C5/142 , H03K19/094 , H03K19/10 , H03K19/215
摘要： A logic circuit including a pair of FETs connected in parallel and including first and second common current terminals, each of the FETs further having a control terminal connected to receive a logic signal thereon. A negative differential resistance device affixed to one of the first and second common current terminals and having a conductance characteristic such that the device operates at a peak current when one of the FETs is turned ON and at a valley current when both of the FETs are simultaneously turned ON. A load resistance coupled to the other of the first and second common current terminals and providing an output for the logic circuit.
摘要翻译：一种逻辑电路，包括并联连接并包括第一和第二公共电流端子的一对FET，每个FET还具有连接以在其上接收逻辑信号的控制端子。固定在第一和第二公共电流端子中的一个并具有电导特性的负差分电阻器件，使得器件在FET中的一个导通时以峰值电流工作，并且当两个FET同时处于谷值电流时工作打开。负载电阻耦合到第一和第二公共电流端子中的另一个，并提供逻辑电路的输出。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式