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1. 发明授权

US5427965A Method of fabricating a complementary heterojunction FET 失效
标题翻译：制造互补异质结FET的方法
公开(公告)号：US5427965A
公开(公告)日：1995-06-27
申请号：US262292
申请日：1994-06-20
申请人： Saied N. Tehrani , X. T. Zhu , Herbert Goronkin , Jun Shen
发明人： Saied N. Tehrani , X. T. Zhu , Herbert Goronkin , Jun Shen
IPC分类号： H01L29/80 , H01L27/06 , H01L27/092 , H01L27/095 , H01L21/265 , H01L21/20
CPC分类号： H01L27/0605 , H01L27/092 , Y10S148/015 , Y10S148/072 , Y10S148/16
摘要： A heterojunction device including a first semiconductive layer on a substrate, a barrier layer on the first layer, a second semiconductive layer on the barrier layer and a multi-layer cap, on the second semiconductive layer. First and second gates positioned on layers of the cap to define first and second transistors, with the cap layers being selected and etched to pin the Fermi level in a first transistor conduction channel in the second semiconductive layer such that the number of carriers in the first conduction channel are substantially less than the number of carriers in surrounding portions of the second semiconductive layer and the Fermi level in a second transistor conduction channel in the first semiconductive layer such that the number of carriers in the second conduction channel are substantially less than the number of carriers in surrounding portions of the first semiconductive layer.
摘要翻译：一种异质结装置，在第二半导体层上包括衬底上的第一半导体层，第一层上的阻挡层，阻挡层上的第二半导体层和多层帽。位于盖的层上的第一和第二栅极限定第一和第二晶体管，其中盖层被选择和蚀刻以在第二半导体层中的第一晶体管导通通道中引导费米能级，使得第一和第二晶体管中的载流子数目传导通道基本上小于第一半导体层中的第二半导体层的周围部分中的载流子数量和第二晶体管传导通道中的费米能级数，使得第二导电通道中的载流子数目基本上小于数量在第一半导体层的周围部分的载体。

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