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1. 发明授权

US06326228B1 Sensor and method of fabrication 失效
标题翻译：传感器和制造方法
公开(公告)号：US06326228B1
公开(公告)日：2001-12-04
申请号：US09086740
申请日：1998-05-29
申请人： Henry G. Hughes , Marilyn J. Stuckey , Margaret L. Kniffin , Ping-chang Lue
发明人： Henry G. Hughes , Marilyn J. Stuckey , Margaret L. Kniffin , Ping-chang Lue
IPC分类号： H01L2120
CPC分类号： G01N27/12 , G01N33/0014
摘要： A sensor (10) includes a cavity (31) formed by a substrate (11), an adhesive (21), and a filter (22). A sensing element (14) is located inside the cavity (31) while electrical contacts (17, 18) coupled to the sensing element (14) are located outside the cavity (31). The filter (22) protects the sensing element (14) from physical damage and contamination during die singulation and other assembly processes. The filter (22) also improves the chemical sensitivity, selectivity, response times, and refresh times of the sensing element (14).
摘要翻译：传感器（10）包括由基板（11）形成的空腔（31），粘合剂（21）和过滤器（22）。耦合到感测元件（14）的电触点（17,18）位于空腔（31）外部，位于空腔（31）内部的感测元件（14）。过滤器（22）保护感测元件（14）免于在模切和其它组装过程期间的物理损坏和污染。过滤器（22）还提高了感测元件（14）的化学敏感性，选择性，响应时间和刷新时间。

2. 发明授权

US5929472A Semiconductor floating gate sensor device 失效
标题翻译：半导体浮栅传感器装置
公开(公告)号：US5929472A
公开(公告)日：1999-07-27
申请号：US834965
申请日：1997-04-07
申请人： Margaret L. Kniffin
发明人： Margaret L. Kniffin
IPC分类号： G01P15/08 , H01L29/84
CPC分类号： H01L29/84 , G01P15/0802
摘要： A sensor device (40) is formed in a semiconductor substrate (41). The sensor device (40) includes a microstructure (60) that is free to move in response to a force. The microstructure (60) is overlying a floating gate structure (51) and a channel region (44). A guard ring (52) is formed around the floating gate structure (51) to retard the migration of charge onto the floating gate structure (51). This in turn stabilizes the operational performance of the sensor device (40) over time.
摘要翻译：传感器装置（40）形成在半导体衬底（41）中。传感器装置（40）包括响应于力自由移动的微结构（60）。微结构（60）覆盖浮栅结构（51）和沟道区（44）。在浮栅结构（51）周围形成保护环（52），以阻止电荷向浮栅结构（51）的迁移。这反过来又稳定了传感器装置（40）的运行性能。

3. 发明申请

US20140074418A1 METHOD AND SYSTEM FOR CALIBRATING AN INERTIAL SENSOR 审中-公开
标题翻译：用于校准传统传感器的方法和系统
公开(公告)号：US20140074418A1
公开(公告)日：2014-03-13
申请号：US13614448
申请日：2012-09-13
申请人： Yizhen Lin , Margaret L. Kniffin , Andrew C. McNeil , Richard N. Nielsen
发明人： Yizhen Lin , Margaret L. Kniffin , Andrew C. McNeil , Richard N. Nielsen
IPC分类号： G01P21/00 , G06F19/00
CPC分类号： G01P15/125 , G01C25/005 , G01P21/00
摘要： A calibration system (20) configured for communication with an inertial sensor (22) includes a signal generator (24) and processing system (26). A calibration process (60) performed using the calibration system (20) includes applying (90) an electrical stimulus (44) to the inertial sensor (22), receiving an output signal (46) from the sensor (22) produced in response to the electrical stimulus (44) and determining a sensitivity (108) of the inertial sensor (22) to the electrical stimulus (44) in response to the output signal (46) and an applied voltage of the electrical stimulus (44). A sensitivity (112) of the inertial sensor (22) to an inertial stimulus is calculated using the sensitivity (108) and a measured resonant sensitivity (114) of the inertial sensor (22), and the calculated sensitivity (112) is utilized to adjust a gain value (56) for the inertial sensor (22) to calibrate the sensor (22).
摘要翻译：配置为与惯性传感器（22）通信的校准系统（20）包括信号发生器（24）和处理系统（26）。使用校准系统（20）执行的校准过程（60）包括将（90）电刺激（44）应用于惯性传感器（22），从所述传感器（22）接收输出信号（46），响应于电刺激（44）并且响应于输出信号（46）和电刺激（44）的施加电压，确定惯性传感器（22）对电刺激（44）的灵敏度（108）。使用惯性传感器（22）的灵敏度（108）和测量的共振灵敏度（114）来计算惯性传感器（22）对于惯性激励的灵敏度（112），并且将所计算的灵敏度（112）用于调整惯性传感器（22）的增益值（56）以校准传感器（22）。

4. 发明申请

US20070288882A1 Methods and apparatus for simulating distributed effects 有权
标题翻译：用于模拟分布效应的方法和装置
公开(公告)号：US20070288882A1
公开(公告)日：2007-12-13
申请号：US11524655
申请日：2006-09-21
申请人： Margaret L. Kniffin , Dmitry S. Shipitsin , Michael J. Zunino
发明人： Margaret L. Kniffin , Dmitry S. Shipitsin , Michael J. Zunino
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G06F17/5036
摘要： In general, various embodiments of the present invention relate to systems and methods for simulating distributed effects by providing a meshing pattern (200) (e.g., a two-dimensional meshing pattern that is part of a recognition layer), applying that meshing pattern to the physical layout (100), and partitioning the physical layout into a three-dimensional netlist (300) of components derived from the unit cells defined by the meshing pattern (200), thereby modeling the parasitics within the design.
摘要翻译：通常，本发明的各种实施例涉及通过提供网格图案（200）（例如，作为识别层的一部分的二维啮合图案）来模拟分布效应的系统和方法，将该网格图案应用于物理布局（100），以及将所述物理布局分割成由所述网格图案（200）定义的单位单元导出的部件的三维网表（300），从而对所述设计内的寄生效果进行建模。

5. 发明授权

US09242851B2 MEMS device with differential vertical sense electrodes 有权
公开(公告)号：US09242851B2
公开(公告)日：2016-01-26
申请号：US13960032
申请日：2013-08-06
申请人： Aaron A. Geisberger , Margaret L. Kniffin
发明人： Aaron A. Geisberger , Margaret L. Kniffin
IPC分类号： B81B3/00 , B81C1/00 , H01L41/113 , G01P15/125 , G01C19/574 , G01P15/08
CPC分类号： B81C1/00658 , B81B3/0027 , B81B3/0078 , B81B2201/025 , B81C1/0015 , G01C19/574 , G01P15/125 , G01P2015/0831 , H01L21/76 , H01L41/113 , H01L41/1136
摘要： A MEMS device includes a first sense electrode and a first portion of a sense mass formed in a first structural layer, where the first sense electrode is fixedly coupled with the substrate and the first portion of the sense mass is suspended over the substrate. The MEMS device further includes a second sense electrode and a second portion of the sense mass formed in a second structural layer. The second sense electrode is spaced apart from the first portion of the sense mass in a direction perpendicular to a surface of the substrate, and the second portion of the sense mass is spaced apart from the first sense electrode in the same direction. A junction is formed between the first and second portions of the sense mass so that they are coupled together and move concurrently in response to an imposed force.

6. 发明授权

US07530039B2 Methods and apparatus for simulating distributed effects 有权
标题翻译：用于模拟分布效应的方法和装置
公开(公告)号：US07530039B2
公开(公告)日：2009-05-05
申请号：US11524655
申请日：2006-09-21
申请人： Margaret L. Kniffin , Dmitry S. Shipitsin , Michael J. Zunino
发明人： Margaret L. Kniffin , Dmitry S. Shipitsin , Michael J. Zunino
IPC分类号： G06F17/50
CPC分类号： G06F17/5072 , G06F17/5036
摘要： In general, various embodiments of the present invention relate to systems and methods for simulating distributed effects by providing a meshing pattern (200) (e.g., a two-dimensional meshing pattern that is part of a recognition layer), applying that meshing pattern to the physical layout (100), and partitioning the physical layout into a three-dimensional netlist (300) of components derived from the unit cells defined by the meshing pattern (200), thereby modeling the parasitics within the design.
摘要翻译：通常，本发明的各种实施例涉及通过提供网格图案（200）（例如，作为识别层的一部分的二维啮合图案）来模拟分布效应的系统和方法，将该网格图案应用于物理布局（100），以及将所述物理布局分割成由所述网格图案（200）定义的单位单元导出的部件的三维网表（300），从而对所述设计内的寄生效果进行建模。

7. 发明授权

US5818093A Semiconductor device having a movable gate 失效
标题翻译：具有可移动栅极的半导体器件
公开(公告)号：US5818093A
公开(公告)日：1998-10-06
申请号：US591875
申请日：1996-01-25
申请人： Ronald J. Gutteridge , Margaret L. Kniffin , Zuoying L. Zhang , Raymond M. Roop
发明人： Ronald J. Gutteridge , Margaret L. Kniffin , Zuoying L. Zhang , Raymond M. Roop
IPC分类号： G01P15/08 , G01P15/12 , H01L29/78 , H01L29/84 , H01L27/14 , H01L27/20 , H01L29/82
CPC分类号： G01P15/0802 , G01P15/124
摘要： A semiconductor device (8) has a movable gate (20) over a semiconductor substrate (14) having a top surface (30). Source and drain regions (16-19) are in the substrate, and a channel region (24,25) is between the source and drain regions. The gate is suspended above the source and drain regions such that the gate is movable in a plane substantially parallel to the top surface of the substrate. In one embodiment the device is an accelerometer having the gate connected to a beam (10) with an aspect ratio between 2:1 and 10:1. Also, the gate can have first and second levels (22,23) corresponding to first and second threshold voltages of the channel region.
摘要翻译：半导体器件（8）在具有顶表面（30）的半导体衬底（14）上方具有可移动栅极（20）。源区和漏区（16-19）位于衬底中，沟道区（24,25）位于源区和漏区之间。栅极悬挂在源极和漏极区域之上，使得栅极可在基本上平行于衬底的顶表面的平面中移动。在一个实施例中，该装置是加速度计，其具有连接到长宽比在2:1和10:1之间的梁（10）的栅极。此外，栅极可以具有对应于沟道区的第一和第二阈值电压的第一和第二电平（22,23）。

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