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    • 1. 发明授权
    • Array substrate for organic electroluminescent display device and method of fabricating the same
    • 有机电致发光显示装置用阵列基板及其制造方法
    • US08883579B2
    • 2014-11-11
    • US13285489
    • 2011-10-31
    • Hee-Dong ChoiJin-Chae JeonSeung-Joon JeonHoe-Yong Kim
    • Hee-Dong ChoiJin-Chae JeonSeung-Joon JeonHoe-Yong Kim
    • H01L27/12H01L27/32
    • H01L27/1255H01L27/1288H01L27/3223H01L27/3265
    • A method of fabricating an array substrate for an organic electroluminescent display device includes forming a semiconductor layer, a semiconductor dummy pattern, a first storage electrode and a first gate insulating layer on a substrate; forming a second gate insulating layer on the semiconductor layer and the first storage electrode; forming a gate electrode and a second storage electrode on the second gate insulating layer; forming ohmic contact layers by doping impurities into both sides of the semiconductor layer; forming an inter insulating layer on the gate electrode and the second storage electrode; forming source and drain electrodes and a third storage electrode on the inter insulating layer; forming a passivation layer on the source and drain electrodes and the third storage electrode; forming a first electrode and a fourth storage electrode on the passivation layer; and forming a spacer and a bank on the first electrode.
    • 一种制造有机电致发光显示装置用阵列基板的方法包括在基板上形成半导体层,半导体虚设图形,第一存储电极和第一栅极绝缘层; 在所述半导体层和所述第一存储电极上形成第二栅极绝缘层; 在所述第二栅极绝缘层上形成栅电极和第二存储电极; 通过将杂质掺杂到半导体层的两侧来形成欧姆接触层; 在栅电极和第二存储电极上形成绝缘层; 在绝缘层上形成源电极和漏电极和第三存储电极; 在源电极和漏电极和第三存储电极上形成钝化层; 在钝化层上形成第一电极和第四存储电极; 以及在所述第一电极上形成间隔物和堤岸。
    • 4. 发明授权
    • Display device and method of manufacturing the same
    • 显示装置及其制造方法
    • US08030106B2
    • 2011-10-04
    • US12497101
    • 2009-07-02
    • Hee-Dong ChoiSeong-Moh Seo
    • Hee-Dong ChoiSeong-Moh Seo
    • H01L21/84
    • H01L27/124H01L27/1288H01L29/4908H01L29/66765
    • A method of manufacturing a display device includes forming a gate electrode on a substrate, a gate insulating layer on the gate electrode, and an active layer on the gate insulating layer, the gate electrode made of extrinsic polycrystalline silicon, the active layer made of intrinsic polycrystalline silicon; forming an etch stopper on the active layer; forming source and drain electrodes spaced apart from each other on the etch stopper; forming an ohmic contact layer each between a side of the active layer and the source electrode and between an opposing side of the active layer and the drain electrode; forming a gate line connected to the gate electrode; and forming a data line crossing the gate line.
    • 一种制造显示装置的方法包括:在基板上形成栅电极,在栅电极上形成栅极绝缘层,在栅极绝缘层上形成有源层,由外部多晶硅制成的栅电极,由内在的 多晶硅; 在所述有源层上形成蚀刻停止层; 在蚀刻停止器上形成彼此间隔开的源极和漏极; 在所述有源层的一侧和所述源极之间以及所述有源层和所述漏电极的相对侧之间形成欧姆接触层; 形成连接到栅电极的栅极线; 并形成跨越栅极线的数据线。
    • 6. 发明授权
    • Array substrate for display device
    • 阵列基板用于显示装置
    • US08785257B2
    • 2014-07-22
    • US12829705
    • 2010-07-02
    • Hee-Dong ChoiHye-Young ChoiDoo-Seok Yang
    • Hee-Dong ChoiHye-Young ChoiDoo-Seok Yang
    • H01L21/00H01L27/12H01L29/786
    • H01L27/1214H01L27/12H01L27/124H01L29/78648
    • Disclosed is array substrate including a pixel region having a switching region, a driving region and a storage region. A switching TFT in the switching region includes a first gate electrode, a first gate insulating layer, a switching active layer on the first gate insulating layer, a switching source electrode on a first switching ohmic contact layer, and a switching drain electrode on a second switching ohmic contact layer; a driving TFT in the driving region is connected to the switching TFT and includes a first gate electrode, a second gate insulating layer, a driving active layer on the second gate insulating layer, a driving source electrode on a first driving ohmic contact layer, and a driving drain electrode on a second driving ohmic contact layer; wherein at least one of the switching and driving TFTs further includes a second gate electrode over the switching or driving active layers.
    • 公开了包括具有开关区域,驱动区域和存储区域的像素区域的阵列基板。 开关区域中的开关TFT包括第一栅极电极,第一栅极绝缘层,第一栅极绝缘层上的开关有源层,第一开关欧姆接触层上的开关源电极和第二栅极绝缘层上的开关漏极电极 开关欧姆接触层; 驱动区域中的驱动TFT连接到开关TFT,并且包括第一栅极电极,第二栅极绝缘层,第二栅极绝缘层上的驱动有源层,第一驱动欧姆接触层上的驱动源极,以及 在第二驱动欧姆接触层上的驱动漏电极; 其中所述开关和驱动TFT中的至少一个还包括位于所述开关或驱动有源层上的第二栅电极。
    • 7. 发明申请
    • ARRAY SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME
    • 用于显示装置的阵列基板及其制造方法
    • US20110114962A1
    • 2011-05-19
    • US12795430
    • 2010-06-07
    • Hee-Dong ChoiSeong-Moh Seo
    • Hee-Dong ChoiSeong-Moh Seo
    • H01L33/16H01L21/336
    • H01L27/1288H01L27/1214H01L27/1274
    • An array substrate for a display device includes a gate electrode on a substrate; a gate insulating layer on the gate electrode and having the same plane area and the same plane shape as the gate electrode; an active layer on the gate insulating layer and exposing an edge of the gate insulating layer; an interlayer insulating layer on the active layer and including first and second active contact holes, the first and second active contact holes respectively exposing both sides of the active layers; first and second ohmic contact layers contacting the active layer through the first and second active contact holes, respectively; a source electrode on the first ohmic contact layer; a drain electrode on the second ohmic contact layer; a data line on the interlayer insulating layer and connected to the source electrode; a first passivation layer on the source electrode, the drain electrode and the data line, the first passivation layer, the interlayer insulating layer and the gate insulating layer have a first gate contact hole exposing a portion of the gate electrode; a gate line on the first passivation layer and contacting the gate electrode through the first gate contact hole, the gate line crossing the data line; a second passivation layer on the gate line and having a drain contact hole exposing the drain electrode; and a pixel electrode on the second passivation layer and contacting the drain electrode through the contact hole.
    • 用于显示装置的阵列基板包括在基板上的栅电极; 栅电极上的栅极绝缘层,并且具有与栅电极相同的平面面积和相同的平面形状; 栅极绝缘层上的有源层,并露出栅极绝缘层的边缘; 所述有源层上的层间绝缘层包括第一和第二有源接触孔,所述第一和第二有源接触孔分别暴露有源层的两侧; 第一和第二欧姆接触层分别通过第一和第二有源接触孔与有源层接触; 在第一欧姆接触层上的源电极; 第二欧姆接触层上的漏电极; 在层间绝缘层上的与源电极连接的数据线; 源电极,漏电极和数据线上的第一钝化层,第一钝化层,层间绝缘层和栅极绝缘层具有暴露栅电极的一部分的第一栅极接触孔; 在第一钝化层上的栅极线,并通过第一栅极接触孔与栅电极接触,栅极线与数据线交叉; 栅极线上的第二钝化层,并具有暴露漏电极的漏极接触孔; 以及在所述第二钝化层上的像素电极,并且通过所述接触孔与所述漏电极接触。
    • 9. 发明申请
    • Method of fabricating array substrate
    • 阵列基板的制作方法
    • US20100291741A1
    • 2010-11-18
    • US12591501
    • 2009-11-20
    • Hee-Dong ChoiSang-Gul LeeSeong-Moh SeoJun-Min LeeByung-Chui Ahn
    • Hee-Dong ChoiSang-Gul LeeSeong-Moh SeoJun-Min LeeByung-Chui Ahn
    • H01L21/336
    • H01L27/1274H01L27/1214H01L27/1288H01L29/4908
    • A method of fabricating an array substrate includes sequentially forming a first metal layer, a first inorganic insulating layer and an intrinsic amorphous silicon layer on a substrate, the first metal layer including a first metallic material layer and a second metallic material layer; crystallizing the intrinsic amorphous silicon; forming a gate electrode, a gate line, a gate insulating layer and an active layer; forming an interlayer insulating layer including first and second contact holes respectively exposing both sides of the active layer; forming first and second ohmic contact patterns respectively contacting the both sides of the active layers, a source electrode, a drain electrode, and a data line connecting the source electrode; forming a passivation layer on the source electrode, the drain electrode; and forming a pixel electrode on the passivation layer and contacting the drain electrode.
    • 制造阵列基板的方法包括在基板上依次形成第一金属层,第一无机绝缘层和本征非晶硅层,所述第一金属层包括第一金属材料层和第二金属材料层; 结晶本征非晶硅; 形成栅电极,栅极线,栅绝缘层和有源层; 形成包括分别暴露有源层的两侧的第一和第二接触孔的层间绝缘层; 形成分别接触有源层的两侧的第一和第二欧姆接触图案,源电极,漏电极和连接源电极的数据线; 在源极上形成钝化层,漏电极; 以及在所述钝化层上形成像素电极并与所述漏电极接触。