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1. 发明申请

US20120112727A1 ELECTRIC CURRENT MEASURING DEVICE, ELECTRIC CURRENT MEASURING METHOD, AND ELECTRIC CURRENT MEASURING PROGRAM 审中-公开
标题翻译：电流测量装置，电流测量方法和电流测量程序
公开(公告)号：US20120112727A1
公开(公告)日：2012-05-10
申请号：US13383376
申请日：2010-06-09
申请人： Hayato Motohashi , Hirofumi Hirayama , Naoki Nagashima
发明人： Hayato Motohashi , Hirofumi Hirayama , Naoki Nagashima
IPC分类号： G01R19/25 , G05F3/04
CPC分类号： G01R19/25 , G01R19/0092 , G01R19/22
摘要： A current measurement device has a rectification unit rectifying an alternating-current signal, an A/D conversion unit converting an analog signal corresponding to a signal obtained by the rectification into a digital signal, an addition unit for adding digital signals corresponding to alternating-current signals during a sampling period among the digital signals obtained by the conversion, and a current value conversion unit for converting an additional value obtained by the addition by the addition unit into a current value using a current value conversion function. The sampling period is a common multiple of the periods of alternating-current signals of 50 Hz and 60 Hz, the current values of which are to be measured.
摘要翻译：电流测量装置具有对交流信号进行整流的整流单元，将与通过整流获得的信号相对应的模拟信号转换为数字信号的A / D转换单元，用于添加对应于交流的数字信号的加法单元在通过转换获得的数字信号中的采样周期期间的信号;以及电流值转换单元，用于将通过加法单元的相加获得的附加值转换为使用当前值转换功能的当前值。采样周期是50Hz和60Hz的交流信号的周期的公倍数，其当前值将被测量。

2. 发明授权

US06473564B1 Method of manufacturing thin organic film 有权
标题翻译：薄有机薄膜的制造方法
公开(公告)号：US06473564B1
公开(公告)日：2002-10-29
申请号：US09478802
申请日：2000-01-07
申请人： Naoki Nagashima , Natsuki Takahashi , Toshio Negishi
发明人： Naoki Nagashima , Natsuki Takahashi , Toshio Negishi
IPC分类号： C23C1400
CPC分类号： C23C14/22 , C23C14/12 , C23C14/243
摘要： An inactive gas is introduced into an organic material evaporation source to place a thin organic film material in the organic material evaporation source in an atmosphere having a relatively high pressure, and the temperature of the thin organic film material is increased up to a certain temperature. Then, the organic material evaporation source is evacuated to lower the pressure around the thin organic film material for thereby causing the thin organic film material to emit a vapor. Since no wasteful vapor is emitted from the thin organic film material, the thin organic film material is effectively utilized. Because the inactive gas acts as a heating medium, the temperature of the thin organic film material is increased at a high rate, and the thin organic film material is uniformly heated. When the temperature of the thin organic film material is lowered in an inactive gas atmosphere, it can be lowered at a high rate. The inactive gas is introduced directly into the organic material evaporation source by an on-off valve, the time required to evacuate the organic material evaporation source is reduced. A liquid thin organic film material may be heated by a heating medium in the organic material evaporation source, so that the liquid thin organic film material will not be heated to a temperature higher than the temperature of the heating medium, and hence will not suffer bumping due to a temperature overshooting.
摘要翻译：将惰性气体引入有机材料蒸发源中，以将有机材料薄膜材料置于具有较高压力的气氛中的有机材料蒸发源中，并将有机薄膜材料的温度升高到一定温度。然后，将有机材料蒸发源抽真空以降低薄有机膜材料周围的压力，由此使有机薄膜材料发生蒸气。由于从薄的有机薄膜材料不会产生浪费的蒸汽，因此有效地利用薄的有机薄膜材料。由于惰性气体作为加热介质，所以薄的有机薄膜材料的温度以高的速率增加，并且薄的有机薄膜材料被均匀地加热。当有机薄膜材料的温度在惰性气体气氛中降低时，可以高速降低。惰性气体通过开关阀直接引入有机材料蒸发源，减少了抽空有机材料蒸发源所需的时间。可以通过有机材料蒸发源中的加热介质来加热液体薄的有机膜材料，使得液体薄的有机膜材料不会被加热到比加热介质的温度高的温度，因此不会发生碰撞由于温度过高。

3. 发明授权

US5597739A MOS transistor and method for making the same 失效
标题翻译： MOS晶体管及其制造方法
公开(公告)号：US5597739A
公开(公告)日：1997-01-28
申请号：US636848
申请日：1996-04-23
申请人： Hirofumi Sumi , Naoki Nagashima
发明人： Hirofumi Sumi , Naoki Nagashima
IPC分类号： H01L21/762 , H01L21/02 , H01L21/336 , H01L27/12 , H01L29/45 , H01L29/78 , H01L29/786 , H01L21/265 , H01L21/20 , H01L21/302 , H01L21/44
CPC分类号： H01L29/78696 , H01L29/458 , H01L29/66772 , H01L29/78654
摘要： Transistor devices comprise a gate electrode, a channel region formed beneath the gate electrode, a source region in contact with one side of the channel region, a first conductive region formed in a semiconductor layer at the outer side of the source region and made of a metal or metal compound, a drain region formed in contact with the other side of the channel region, and a second conductive region formed in the semiconductor layer at the outer side of the drain region and consisting of a metal or a metal compound. The transistor has an SOI structure which has an improved breakdown voltage between the source region and the drain region with low sheet resistances of the source and drain regions. Methods for making the transistor devices are also described.
摘要翻译：晶体管器件包括栅极电极，形成在栅极电极下方的沟道区域，与沟道区域的一侧接触的源极区域，形成在源极区域的外侧的半导体层中的第一导电区域，金属或金属化合物，与沟道区域的另一侧接触形成的漏极区域和形成在漏极区域的外侧的半导体层中并由金属或金属化合物构成的第二导电区域。晶体管具有SOI结构，其在源极区和漏极区之间具有改善的源极和漏极区的薄片电阻的击穿电压。还描述了制造晶体管器件的方法。

4. 发明申请

US20100224168A1 CONTROL DEVICE OF DIESEL ENGINE AND METHOD OF CONTROLLING DIESEL ENGINE 有权
标题翻译：柴油发动机的控制装置和控制柴油发动机的方法
公开(公告)号：US20100224168A1
公开(公告)日：2010-09-09
申请号：US12716756
申请日：2010-03-03
申请人： Kousuke YASUHARA , Yasutaka Ishibashi , Naoki Nagashima
发明人： Kousuke YASUHARA , Yasutaka Ishibashi , Naoki Nagashima
IPC分类号： F02P5/04 , F02B3/00
CPC分类号： F02D41/34 , F02D35/027 , F02D35/028 , F02D41/403 , F02D2041/1432 , F02D2200/025 , F02P5/1521 , Y02T10/44
摘要： A control device of a diesel engine, including an acceleration detector including an acceleration sensor, the acceleration sensor being attached to an engine body that defines a combustion chamber, the acceleration detector configured to output a vibration acceleration, an integrator configured to integrate values corresponding to amplitudes of the vibration acceleration from a predetermined integration start timing that is at least before an ignition timing, a comparison unit configured to compare an integration value of the integrator with a predetermined ignition timing judgment level, and a real ignition timing judgment unit configured to judge a real ignition timing on the basis of a reach timing, at which the integration value has reached the ignition timing judgment level.
摘要翻译：一种柴油发动机的控制装置，包括：加速度检测器，包括加速度传感器，所述加速度传感器附接到限定燃烧室的发动机主体，所述加速度检测器被配置为输出振动加速度;积分器，以及来自至少在点火正时之前的预定积分开始定时的振动加速度的振幅，被配置为将积分器的积分值与预定点火正时判断水平进行比较的比较单元，以及被配置为判断基于积分值达到点火正时判定水平的到达定时的实际点火正时。

5. 发明授权

US06756299B2 Process for fabricating a semiconductor device 失效
标题翻译：制造半导体器件的工艺
公开(公告)号：US06756299B2
公开(公告)日：2004-06-29
申请号：US10285959
申请日：2002-11-01
申请人： Naoki Nagashima
发明人： Naoki Nagashima
IPC分类号： H01L214763
CPC分类号： H01L21/76835 , H01L21/76811 , H01L21/76813 , H01L21/76826 , H01L21/76829
摘要： A process for fabricating a semiconductor device, which reduces the number of steps required for forming a via hole and a wiring trench in the insulating film comprised of a low dielectric-constant insulating material, resulting in a lower cost for fabrication and a shorter turn around time, is provided. A photosensitive silazane film is exposed and developed to form a hard mask on an interlayer dielectric. The hard mask defines a wiring pattern for a wiring layer and a position of a via hole. Then, a resist film is formed on the interlayer dielectric to form a resist mask having a via hole pattern, and part of a via hole is formed using the resist mask. The interlayer dielectric is subjected to anisotropic etching using the hard mask to form a wiring trench and to allow the via hole to reach the wiring layer, and the wiring layer is exposed.
摘要翻译：一种用于制造半导体器件的方法，其减少了在由低介电常数绝缘材料构成的绝缘膜中形成通孔和布线沟槽所需的步骤数量，导致制造成本更低，转弯更短时间。将感光性硅氮烷膜曝光并显影以在层间电介质上形成硬掩模。硬掩模限定布线层的布线图案和通孔的位置。然后，在层间电介质上形成抗蚀剂膜，形成具有通孔图案的抗蚀剂掩模，并且使用抗蚀剂掩模形成通孔的一部分。使用硬掩模对层间电介质进行各向异性蚀刻，形成布线沟槽，并使通孔到达布线层，并且布线层露出。

6. 发明授权

US5824360A Method of planarizing film in semiconductor device 失效
标题翻译：在半导体器件中平面化膜的方法
公开(公告)号：US5824360A
公开(公告)日：1998-10-20
申请号：US695305
申请日：1996-08-09
申请人： Naoki Nagashima
发明人： Naoki Nagashima
IPC分类号： H01L21/76 , H01L21/304 , H01L21/306 , H01L21/3105 , H01L21/3205 , B05D5/12
CPC分类号： H01L21/31053
摘要： A method of planarizing films in a semiconductor device, which is capable of uniformly planarizing films at a good controllability in polished amounts while keeping uniformity in polishing within a wafer surface. The method includes the steps of forming a first film on at least a step portion provided on a base body, covering the step portion with a second film containing phosphorus in an amount of from 6 to 9 wt % and higher in polishing rate than the first film, and polishing the second film to expose the first film formed on the top of the step portion.
摘要翻译：一种在半导体器件中平面化膜的方法，其能够以均匀的平坦化平坦化膜的方式以良好的抛光量控制，同时保持晶片表面内的抛光均匀性。该方法包括以下步骤：在设置在基体上的至少一个台阶部分上形成第一薄膜，用第二薄膜覆盖台阶部分，该第二薄膜的抛光速率比第一薄膜的第一薄膜的含量高6至9重量％膜，并抛光第二膜以暴露形成在台阶部分顶部上的第一膜。

7. 发明授权

US5629242A Process for planarizing surface of a semiconductor device 失效
标题翻译：用于平坦化半导体器件的表面的工艺
公开(公告)号：US5629242A
公开(公告)日：1997-05-13
申请号：US372942
申请日：1995-01-17
申请人： Naoki Nagashima , Hiroshi Takahashi
发明人： Naoki Nagashima , Hiroshi Takahashi
IPC分类号： H01L21/31 , H01L21/304 , H01L21/3105 , H01L21/316 , H01L21/318 , H01L21/3205 , H01L21/76 , H01L21/762 , H01L21/768 , H01L23/522
CPC分类号： H01L21/76205 , H01L21/31051 , H01L21/31053 , H01L21/76229 , H01L21/31612 , H01L21/31625 , H01L21/3185
摘要： A layer planarizing method for a semiconductor device is provided to attain excellent controllability of a polishing amount to form a uniform and flat layer on a non-uniform wafer in polishing in a wafer surface. According to the method, a first layer is deposited over at least a top portion of a stepped portion formed on a surface of a body, the stepped portion covered with the first layer is covered with a second layer having a higher polishing rate than that of the first layer, and the second layer is polished until the first layer deposited on the top portion of the stepped portion is exposed.
摘要翻译：提供一种用于半导体器件的层平面化方法，以在晶片表面的抛光中在非均匀晶片上获得优异的抛光量的可控制性，以形成均匀且平坦的层。根据该方法，在形成于主体的表面的阶梯部的至少顶部上沉积第一层，被第一层覆盖的阶梯部覆盖有比第二层高的抛光速度的第二层第一层和第二层被抛光直到暴露在阶梯部分的顶部上的第一层。

8. 发明授权

US08766837B2 Modulator and ΔΣ-type D/A converter 有权
标题翻译：调制器和＆Dgr＆amp; S型D / A转换器
公开(公告)号：US08766837B2
公开(公告)日：2014-07-01
申请号：US13522836
申请日：2010-09-30
申请人： Tetsuya Kajita , Seita Nashimoto , Naoki Nagashima , Kouji Okuda
发明人： Tetsuya Kajita , Seita Nashimoto , Naoki Nagashima , Kouji Okuda
IPC分类号： H03M1/66
CPC分类号： H03M3/51
摘要： The disclosed device easily and precisely satisfies a requested output range, and is provided with: a ΔΣ-modulator (12) which converts a digital input signal to a pulse signal; an input comparison device (11) which compares an input value that corresponds to the digital input signal, and a pre-set threshold value; and a thinned output control unit (14) which, when the result of the comparison by the input comparison device (11) shows that the input value is less than the threshold value, reduces the output value corresponding to the input value in accordance with the size of the difference between the input value and the threshold value, and sets the output value to 0 when the input value is 0.
摘要翻译：所公开的装置容易且精确地满足请求的输出范围，并且具有：将数字输入信号转换为脉冲信号的调制器（12）; 比较与数字输入信号对应的输入值和预设阈值的输入比较装置（11）; 以及减量输出控制单元（14），当输入比较装置（11）的比较结果表明输入值小于阈值时，根据该输入值减小对应于输入值的输出值输入值与阈值之差的大小，输入值为0时将输出值设定为0。

9. 发明授权

US08418674B2 Control device of diesel engine and method of controlling diesel engine 有权
标题翻译：柴油机控制装置及柴油机控制方法
公开(公告)号：US08418674B2
公开(公告)日：2013-04-16
申请号：US12716756
申请日：2010-03-03
申请人： Kousuke Yasuhara , Yasutaka Ishibashi , Naoki Nagashima
发明人： Kousuke Yasuhara , Yasutaka Ishibashi , Naoki Nagashima
IPC分类号： F02P5/04 , F02B3/00
CPC分类号： F02D41/34 , F02D35/027 , F02D35/028 , F02D41/403 , F02D2041/1432 , F02D2200/025 , F02P5/1521 , Y02T10/44
摘要： A control device of a diesel engine, including an acceleration detector including an acceleration sensor, the acceleration sensor being attached to an engine body that defines a combustion chamber, the acceleration detector configured to output a vibration acceleration, an integrator configured to integrate values corresponding to amplitudes of the vibration acceleration from a predetermined integration start timing that is at least before an ignition timing, a comparison unit configured to compare an integration value of the integrator with a predetermined ignition timing judgment level, and a real ignition timing judgment unit configured to judge a real ignition timing on the basis of a reach timing, at which the integration value has reached the ignition timing judgment level.
摘要翻译：一种柴油发动机的控制装置，包括：加速度检测器，包括加速度传感器，所述加速度传感器附接到限定燃烧室的发动机主体，所述加速度检测器被配置为输出振动加速度;积分器，以及来自至少在点火正时之前的预定积分开始定时的振动加速度的振幅，被配置为将积分器的积分值与预定点火正时判断水平进行比较的比较单元，以及被配置为判断基于积分值达到点火正时判定水平的到达定时的实际点火正时。

10. 发明授权

US06716743B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06716743B2
公开(公告)日：2004-04-06
申请号：US10157402
申请日：2002-05-29
申请人： Naoki Nagashima
发明人： Naoki Nagashima
IPC分类号： H01L214763
CPC分类号： H01L21/7684
摘要： A method of forming wiring of a uniform film thickness using a damascene process is proposed. Tantalum nitride, copper, another copper, and another tantalum nitride, for example, all constituting conductive films of different polishing rates, are overlayed on the top layer of an insulating film in which one wiring groove and another wiring groove are formed. The film thickness of the tantalum nitride, the copper, the other copper, and the other tantalum nitride is set and formed so that the height of the surface of the tantalum nitride formed on a silicon oxide film excluding the one wiring groove matches the height of the surface of the other tantalum nitride formed on the top layer of the one wiring groove. Subsequently, polishing takes over to complete the forming process.
摘要翻译：提出了一种使用镶嵌工艺形成均匀膜厚的布线的方法。例如，所有构成不同抛光速度的导电膜的氮化钽，铜，另一种铜和另一种氮化钽覆盖在形成一个布线槽和另一布线槽的绝缘膜的顶层上。氮化钽，铜，其他铜和其他氮化钽的膜厚被设定和形成，使得在除了一个布线槽以外的氧化硅膜上形成的氮化钽的表面的高度与形成在一个布线槽的顶层上的另一个氮化钽的表面。随后，抛光接管完成成型工艺。

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