专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06486511B1 Solid state RF switch with high cutoff frequency 有权
标题翻译：具有高截止频率的固态RF开关
公开(公告)号：US06486511B1
公开(公告)日：2002-11-26
申请号：US09942824
申请日：2001-08-30
申请人： Harvey C. Nathanson , Philip C. Smith , R. Chris Clarke , David M. Krafcsik , Lawrence E. Dickens
发明人： Harvey C. Nathanson , Philip C. Smith , R. Chris Clarke , David M. Krafcsik , Lawrence E. Dickens
IPC分类号： H01L2974
CPC分类号： H01L29/66666 , H01L29/435 , H01L29/7827
摘要： A solid state microwave switch having a plurality of adjacent parallel fingers covered with an oxide layer. One end of a finger is an N+ source region while the other end is an N+ drain region, with a current conducting N region between them. The oxide layer is covered with a gate layer to which a gate signal is applied for control of current between the N+ regions through the N region. The gate layer is highly resistive and has a sheet resistance on the order of millions of ohms per square. The length from the source to drain region is around 2 &mgr;m, and the fingers are spaced with a pitch of around 1 &mgr;m.
摘要翻译：一种固态微波开关，具有被氧化物层覆盖的多个相邻的平行指状物。手指的一端是N +源极区域，而另一端是N +漏极区域，它们之间具有导电的N区域。氧化物层被施加栅极信号的栅极层覆盖，以控制通过N区域的N +区域之间的电流。栅极层是高电阻性的，并且具有数百万欧姆/平方的数量级的薄层电阻。从源极到漏极区域的长度约为2μm，并且指状物以约1um的间距间隔开。

2. 发明授权

US5412421A Motion compensated sensor 失效
标题翻译：运动补偿传感器
公开(公告)号：US5412421A
公开(公告)日：1995-05-02
申请号：US122134
申请日：1993-09-15
申请人： Robert A. Hale , Harvey C. Nathanson
发明人： Robert A. Hale , Harvey C. Nathanson
IPC分类号： G01S3/04 , H04N5/232 , H04N7/18
CPC分类号： H04N5/23258 , G01S3/043 , H04N5/23248 , H04N5/23287 , H04N7/18
摘要： A sensor produces signals corresponding to positions of objects within a field of view over time. A motion detector is provided for determining movement of the sensor. Signals from the sensor and the detector go to a processing unit which causes an appropriate modification of the signal received from the sensor to compensate for the movement.
摘要翻译：传感器随着时间的推移产生与视场内的对象位置对应的信号。提供运动检测器以确定传感器的运动。来自传感器和检测器的信号进入处理单元，该处理单元对从传感器接收的信号进行适当的修改以补偿运动。

3. 发明授权

US5355095A Broadband microwave integrated circuit amplifier with capacitive neutralization 失效
标题翻译：宽带微波集成电路放大器采用电容中和
公开(公告)号：US5355095A
公开(公告)日：1994-10-11
申请号：US838971
申请日：1992-02-21
申请人： Harvey C. Nathanson , Richard J. Ravas
发明人： Harvey C. Nathanson , Richard J. Ravas
IPC分类号： H03F3/18 , H03F3/26
CPC分类号： H03F3/265
摘要： Push-pull complimentary MOSFET devices are formed in a thin active layer between the top surface of a high resistivity silicon wafer and a insulating layer implanted below the top surface. Each MOSFET is composed of a plurality of cells each having a source, a gate, and a drain region extending fully through the active layer. Grooves extending through the wafer are lined with vias which connect the source regions with a floating ground plane on the bottom of the wafer. The gates of all the cells are connected by a gate bus on the top surface. Air bridges spanning the gates and the source vias connect the drain conductors of each cell. Neutralizing capacitors connected between an input and an opposite output of the push-pull complimentary MOSFET devices match the parasitic capacitances of the devices and provide wide bandwidth amplification with roll off well into the GHz range without the need for tuning inductors.
摘要翻译：推挽互补MOSFET器件形成在高电阻率硅晶片的顶表面和植入在顶表面下方的绝缘层之间的薄的有源层中。每个MOSFET由多个单元组成，每个单元具有完全延伸穿过有源层的源极，栅极和漏极区域。延伸穿过晶片的沟槽衬有通孔，其将源区域与晶片底部上的浮动接地平面连接。所有电池的栅极通过顶部表面上的栅极总线连接。跨过门和源通孔的空气桥连接每个电池的漏极导体。连接在推挽互补MOSFET器件的输入端和反相输出端之间的中和电容器与器件的寄生电容相匹配，并提供宽带宽放大，无需调谐电感器即可滚动到GHz范围内。

4. 发明授权

US08018053B2 Heat transfer device 有权
标题翻译：传热装置
公开(公告)号：US08018053B2
公开(公告)日：2011-09-13
申请号：US12023831
申请日：2008-01-31
申请人： Harvey C. Nathanson , Robert M. Young , Joseph T. Smith , Robert S. Howell , Archer S. Mitchell
发明人： Harvey C. Nathanson , Robert M. Young , Joseph T. Smith , Robert S. Howell , Archer S. Mitchell
IPC分类号： H01L23/34 , H01L35/00
CPC分类号： H01L35/00 , H01L23/34 , H01L2924/0002 , H01L2924/00
摘要： One example discloses a heat transfer device that can comprise a semiconductor material having a first region and a second region. The first region and the second region are doped to propel a charged carrier from the first region to the second region. The heat transfer device can also comprise an array of pointed tips thermoelectrically communicating with the second region. A heat sink faces the array, and a vacuum tunneling region is formed between the pointed tips and the heat sink. The heat transfer device further can further comprise a power source for biasing the heat sink with respect to the first region. The first region defines an N-type semiconductor material and the second region defines a P-type semiconductor material.
摘要翻译：一个实例公开了一种传热装置，其可以包括具有第一区域和第二区域的半导体材料。第一区域和第二区域被掺杂以将带电载体从第一区域推动到第二区域。传热装置还可以包括与第二区域热电连通的尖端的阵列。散热器面向阵列，并且在尖端和散热器之间形成真空隧道区域。传热装置还可以进一步包括用于相对于第一区域偏置散热器的电源。第一区域限定N型半导体材料，第二区域限定P型半导体材料。

5. 发明授权

US07119942B2 Side spring micro-mirror 失效
标题翻译：侧弹微镜
公开(公告)号：US07119942B2
公开(公告)日：2006-10-10
申请号：US10879040
申请日：2004-06-30
申请人： Harvey C. Nathanson , Robert S. Howell , Garrett A. Storaska , John B. Goodell , Stephen D. Vancampen
发明人： Harvey C. Nathanson , Robert S. Howell , Garrett A. Storaska , John B. Goodell , Stephen D. Vancampen
IPC分类号： G02B26/00
CPC分类号： G02B26/0841
摘要： A micro-electrical mechanical system (MEMS) mirror assembly including an array of micro-mirrors formed on a substrate and having springs on one side and which angularly tilt between ON and OFF states in response to an electrostatic force generated by a voltage applied to an electrode located on the substrate. At least one, but preferably two springs in the form of two thin strips of metal attach to post(s) at the side edge of the mirror and act as springs which provide a restoring force when the mirror is tilted between an OFF state which occurs when the mirror is flat relative to the substrate with no voltage applied, and in the ON state when the mirror is tilted when a voltage is applied.
摘要翻译：一种微电机械系统（MEMS）反射镜组件，包括形成在基板上的微反射镜阵列，并且在一侧具有弹簧，并且响应于施加到一个电压的电压产生的静电力而在ON和OFF状态之间成角度地倾斜电极位于基板上。至少一个，但最好是两个金属条带形式的两个弹簧，在镜子的侧边缘附着到柱上，并且当弹簧在镜子在发生的关闭状态之间倾斜时提供恢复力当反射镜相对于没有施加电压的基板是平坦的，并且当施加电压时镜子倾斜时处于导通状态。

6. 发明授权

US5896105A Distributed phased array antenna system 失效
标题翻译：分布式相控阵天线系统
公开(公告)号：US5896105A
公开(公告)日：1999-04-20
申请号：US880703
申请日：1997-06-23
申请人： John H. Murphy , Laurence E. Kline , Harvey C. Nathanson , Harry V. Winsor
发明人： John H. Murphy , Laurence E. Kline , Harvey C. Nathanson , Harry V. Winsor
IPC分类号： G01S5/00 , G01S5/14 , G01S19/48 , H01Q21/00 , H01Q21/22 , H04B7/185
CPC分类号： G01S19/36 , G01S19/015 , H01Q21/0025 , H01Q21/22 , G01S5/0027
摘要： An array of individual and autonomous modules are deployed in a region to be surveilled. Each module, contained in an air dropable bomblet, includes a GPS system for determining the exact location of the deployed module. The module also includes an rf receiver and transmitter, as well as an atomic clock circuit for providing highly precise time and clocking signals, with operation of the module circuitry being governed by a control computer. The computers of the modules are individually programmed such that the modules of the array collectively operate as a distributed phased array antenna system, but without any hardwired interconnection between the modules. In another embodiment a single receiver is utilized and the apparatus operates on the frequency set of the GPS system.
摘要翻译：一组独立模块和自主模块部署在要监视的区域中。包含在可空气弹射炸弹中的每个模块包括用于确定所部署的模块的确切位置的GPS系统。该模块还包括rf接收器和发射器，以及用于提供高度精确的时间和时钟信号的原子钟电路，模块电路的操作由控制计算机控制。模块的计算机被单独编程，使得阵列的模块集中地用作分布式相控阵天线系统，但是在模块之间没有任何硬连线互连。在另一个实施例中，使用单个接收机，并且该设备在GPS系统的频率集上进行操作。

7. 发明授权

US5061930A Multi-mode missile seeker system 失效
标题翻译：多模式导弹探测系统
公开(公告)号：US5061930A
公开(公告)日：1991-10-29
申请号：US536924
申请日：1990-06-12
申请人： Harvey C. Nathanson , Thomas E. Underwood
发明人： Harvey C. Nathanson , Thomas E. Underwood
IPC分类号： F41G7/22
CPC分类号： F41G7/2246 , F41G7/224 , F41G7/2286
摘要： A broad band multimode seeker system for a missile includes a wide band phased array transmitter/receiver unit incorporating a wafer scale phased array device with a bandwidth of about 2 GHz to 35 GHz. A multimode intermediate frequency unit selectively generates radar and jamming waveforms and measures parameters of reflected radar and external emissions of RF energy. A guidance processor manages the front end assets for selective active or semiactive radar searching and tracking, and simultaneous searching for, tracking of, homing on, and applying a selection of electronic countermeasures to, multiple defensive radars. Confirmation of an assigned target is made through correlation of received RF signals with libraries of expected defensive system parameters and high resolution target profiles and preloaded target geographical coordinates.
摘要翻译：用于导弹的宽带多模探头系统包括宽带相控阵发射器/接收器单元，其包括具有约2GHz至35GHz的带宽的晶片级相控阵列器件。多模中频单元选择性地产生雷达和干扰波形，并测量反射雷达的参数和RF能量的外部发射。引导处理器管理用于选择性主动或半主动雷达搜索和跟踪的前端资产，以及多个防御雷达的同时搜索，跟踪，归位和应用选择的电子对策。通过将接收到的RF信号与预期的防御系统参数和高分辨率目标轮廓和预加载的目标地理坐标的库进行相关来确定分配的目标。

8. 发明授权

US4823136A Transmit-receive means for phased-array active antenna system using rf redundancy 失效
标题翻译：发射接收装置，用于使用rf冗余的相控阵有源天线系统
公开(公告)号：US4823136A
公开(公告)日：1989-04-18
申请号：US13490
申请日：1987-02-11
申请人： Harvey C. Nathanson , Michael C. Driver , Michael W. Cresswell , Ronald G. Freitag , Donald K. Alexander , Daniel F. Yaw
发明人： Harvey C. Nathanson , Michael C. Driver , Michael W. Cresswell , Ronald G. Freitag , Donald K. Alexander , Daniel F. Yaw
IPC分类号： G01S7/03 , H01Q3/26 , H01Q21/00 , H01Q23/00
CPC分类号： H01Q21/0025 , G01S7/032 , H01Q3/26
摘要： An improved phased-array active antenna transmit-receive means utilizing a multiplicity of individual transmit-receive cells positioned in an array format upon a common wafer of semiconductor material. Each transmit-receive cell, comprises a multiplicity of redundant, integrated circuit, electronic devices implanted upon the common semiconductor substrate. The transmit-receive cells utilize novel mitered mechanical switches to permanently interconnect individual electronic devices into either transmit or receive circuits during the fabrication and test of the transmit-receive cells. Radio frequency and direct current input and output vias formed from a novel metal evaportion technique connect the devices upon the surface of the common semiconductor wafer to underlying, insulated direct current distribution circuits and a radio frequency manifold. This array of improved phased-array active antenna transmit-receive means comprised of transmit-receive cells sharing common central processing means, logic control and heat dissipation means results in a significant reduction in the size and weight of the standard phased-array active antenna system. This significant reduction in antenna system size and weight is very important in broad band electronic countermeasure systems or narrow band phased array active antenna radar systems as used in advanced tactical fighters, or space applications.
摘要翻译：一种改进的相控阵有源天线发射 - 接收装置，利用位于半导体材料的公共晶片上的阵列格式的多个单独的发射 - 接收单元。每个发射 - 接收单元包括多个冗余的集成电路，注入到公共半导体衬底上的电子器件。发射接收蜂窝小区利用新颖的倾斜机械开关，在发射接收小区的制造和测试期间，将各个电子设备永久地互连到发射或接收电路中。由新型金属蒸发技术形成的射频和直流输入和输出通孔将公共半导体晶片的表面上的器件连接到下面的绝缘直流分配电路和射频歧管。由共享公共中央处理装置，逻辑控制和散热装置的发射 - 接收单元组成的改进的相控阵有源天线发射 - 接收装置阵列导致标准相控阵有源天线系统的尺寸和重量的显着降低。天线系统尺寸和重量的显着降低对于在高级战术战机或空间应用中使用的宽带电子对抗系统或窄带相控阵有源天线雷达系统是非常重要的。

9. 发明授权

US4769883A Method for tuning a microwave integrated circuit 失效
标题翻译：微波集成电路调谐方法
公开(公告)号：US4769883A
公开(公告)日：1988-09-13
申请号：US472529
申请日：1983-03-07
申请人： Harvey C. Nathanson , James G. Oakes , Varley L. Wrick , Michael C. Driver , Joseph C. Kotvas
发明人： Harvey C. Nathanson , James G. Oakes , Varley L. Wrick , Michael C. Driver , Joseph C. Kotvas
IPC分类号： G01R31/28 , H01L21/48 , H01L23/538 , H01L23/66 , H05K1/00 , H05K1/02 , H01G7/00 , G01R23/00 , H01F7/06 , H01P3/08 , H05K3/00
CPC分类号： H01L23/66 , G01R31/2822 , H01L21/485 , H01L23/5382 , H01L2224/45015 , H01L2224/45144 , H01L2224/49175 , H01L24/45 , H01L24/49 , H01L2924/00014 , H01L2924/01014 , H01L2924/01079 , H01L2924/12042 , H01L2924/14 , H01L2924/19041 , H01L2924/30107 , H01L2924/3011 , H05K1/0237 , H05K1/0286 , Y10T29/435 , Y10T29/49004 , Y10T29/4902 , Y10T29/49082 , Y10T29/49124 , Y10T29/49156
摘要： A method of tuning a microwave integrated circuit by trimming desired film-type circuit patterns included therein by a cold-pressure bonding technique is disclosed. More specifically, intercoupled circuit patterns are formed on a semi-insulating substrate with some circuit patterns having impedance characteristics of a desired nominal value. Each circuit pattern may comprise a plurality of conductive paths of malleable metal. Gaps are provided at appropriately chosen places in the conductive paths of predetermined circuit patterns. Selected ones of the gaps of the conductive paths are bridged to adjust the impedance characteristics of the associated predetermined circuit pattern by wiping with a probe the malleable metal of the conductive path at one end of the gap, across the gap to make contact with the malleable metal of the conductive path at the other end of the gap. The method further includes steps for in-situ testing of the integrated circuit by energizing the microwave integrated circuit to effect operation thereof; testing selected parameters of the energized microwave integrated circuit for determining the operational response thereof; and performing the step of bridging selected gaps of the energized microwave integrated circuit with a probe of insulating material to adjust the impedance characteristics thereof to render a desired measure response therefrom as determined by the testing step.
摘要翻译：公开了一种通过利用冷压接技术修整所需的薄膜型电路图案来调谐微波集成电路的方法。更具体地说，在具有阻抗特性为期望标称值的一些电路图案的半绝缘衬底上形成相互联系的电路图案。每个电路图案可以包括多个可延展金属的导电路径。在预定电路图案的导电路径中的适当选择的位置提供间隙。桥接导电路径的间隙中的选定的间隙以通过用探针擦拭间隙的一端处的导电路径的可延展金属跨越间隙以与可延展的接触来调节相关联的预定电路图案的阻抗特性导电路径的金属在间隙的另一端。该方法还包括通过激励微波集成电路来实现集成电路的操作来现场测试集成电路的步骤; 测试通电微波集成电路的选定参数，以确定其运行响应; 以及通过绝缘材料的探针执行桥接所述通电的微波集成电路的选定间隙的步骤，以调整其阻抗特性，以便通过测试步骤确定所需的测量响应。

10. 发明授权

US07795647B2 Curled semiconductor transistor 失效
标题翻译：卷曲半导体晶体管
公开(公告)号：US07795647B2
公开(公告)日：2010-09-14
申请号：US11727955
申请日：2007-03-29
申请人： Garrett A. Storaska , Robert S. Howell , Harvey C. Nathanson , Francis William Hopwood
发明人： Garrett A. Storaska , Robert S. Howell , Harvey C. Nathanson , Francis William Hopwood
IPC分类号： H01L29/76
CPC分类号： H01L21/84 , H01L27/1203 , H01L29/0657 , H01L29/78603 , H01L29/78696
摘要： A curled transistor comprises a coiled semiconductor substrate having a plurality of concentrically curled layers. Source and drain regions are configured on a portion of the coiled semiconductor substrate, and a gate dielectric is positioned between the source and drain regions. A first set of metallic contacts electrically couple to the source region on the coiled semiconductor substrate and a second set of metallic contacts electrically couple to the drain region on the coiled semiconductor substrate.
摘要翻译：卷曲晶体管包括具有多个同心卷曲层的螺旋半导体衬底。源极和漏极区域被配置在线圈化的半导体衬底的一部分上，并且栅极电介质位于源极和漏极区域之间。第一组金属触点电耦合到卷绕的半导体衬底上的源极区域，以及第二组金属触点，电耦合到线圈化的半导体衬底上的漏极区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式