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1. 发明授权

US07067830B2 Multi-electron beam exposure method and apparatus 有权
标题翻译：多电子束曝光方法及装置
公开(公告)号：US07067830B2
公开(公告)日：2006-06-27
申请号：US10629623
申请日：2003-07-30
申请人： Haruo Yoda , Yasunari Souda , Hiroya Ohta , Yoshikiyo Yui , Shinichi Hashimoto
发明人： Haruo Yoda , Yasunari Souda , Hiroya Ohta , Yoshikiyo Yui , Shinichi Hashimoto
IPC分类号： H01J37/08
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/31764 , H01J2237/31767
摘要： The dimension of the main field as a unit region for exposure is set to an integral submultiple of the arrangement pitch of the LSI to be exposed, by the control computer 62, and the exposure data stored in the form associated with electron beams from a data generation circuit 64 is limited to one-chip data alone in units of a stripe. This data is repeatedly read out to write the stripe. Further, a storage circuit 66 is provided to store the exposure data by means of a double buffer memory unit for each electron beam. While LSI is written according to one of the buffers, the next exposure stripe data is prepared on the other buffer, thereby bringing about a substantial reduction in the required speed of the exposure data generation circuit.
摘要翻译：通过控制计算机62将作为曝光的单位区域的主场的尺寸设定为要暴露的LSI的排列间距的整数倍，并且以与来自数据的电子束相关联的形式存储的曝光数据发生电路64仅以条形为单位限于单芯片数据。该数据被重复读出以写入条带。此外，存储电路66用于通过用于每个电子束的双缓冲存储器单元来存储曝光数据。当根据缓冲器中的一个写入LSI时，在另一个缓冲器上准备下一个曝光条带数据，从而显着降低曝光数据产生电路的所需速度。

2. 发明授权

US07126140B2 Multi-electron beam exposure method and apparatus 有权
标题翻译：多电子束曝光方法及装置
公开(公告)号：US07126140B2
公开(公告)日：2006-10-24
申请号：US11213750
申请日：2005-08-30
申请人： Haruo Yoda , Yasunari Souda , Hiroya Ohta , Yoshikiyo Yui , Shinichi Hashimoto
发明人： Haruo Yoda , Yasunari Souda , Hiroya Ohta , Yoshikiyo Yui , Shinichi Hashimoto
IPC分类号： H01J37/08
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/31764 , H01J2237/31767
摘要： A multi-electron beam exposure method and apparatus, wherein electron beams are applied to a sample surface mounted on a traveling sample stage to perform repeated exposure of chip patterns. An exposure region of the sample surface is partitioned into multiple stripe regions having a width in an x-axis direction, and each of the multiple stripe regions is further partitioned into multiple main fields having a width in a y-axis direction. At least one of the widths of the main fields in the x- and y-axis directions is set to a value, and exposure pattern data for one chip based on the partitioned main fields is stored as a unit. The stored exposure pattern data is readout a number of times corresponding to the number of chips repeatedly, and each electron beam provides repeated exposure of same regions of the chips.
摘要翻译：一种多电子束曝光方法和装置，其中将电子束施加到安装在行进样品台上的样品表面，以进行芯片图案的重复曝光。将样品表面的曝光区域划分为具有x轴方向宽度的多个条纹区域，并且将多个条纹区域中的每一个进一步划分为具有y轴方向宽度的多个主场。将x轴方向和y轴方向上的主场的宽度中的至少一个设定为一个值，并且将基于分割的主场的一个芯片的曝光图案数据作为一个单元存储。存储的曝光图案数据被重复读出与芯片数量相对应的次数，并且每个电子束提供芯片的相同区域的重复曝光。

3. 发明申请

US20060017021A1 Multi-electron beam exposure method and apparatus 有权
公开(公告)号：US20060017021A1
公开(公告)日：2006-01-26
申请号：US11213750
申请日：2005-08-30
申请人： Haruo Yoda , Yasunari Souda , Hiroya Ohta , Yoshikiyo Yui , Shinichi Hashimoto
发明人： Haruo Yoda , Yasunari Souda , Hiroya Ohta , Yoshikiyo Yui , Shinichi Hashimoto
IPC分类号： G21K5/10
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3177 , H01J2237/31764 , H01J2237/31767
摘要： A multi-electron beam exposure method and apparatus, wherein electron beams are applied to a sample surface mounted on a traveling sample stage to perform repeated exposure of chip patterns. An exposure region of the sample surface is partitioned into multiple stripe regions having a width in an x-axis direction, and each of the multiple stripe regions is further partitioned into multiple main fields having a width in a y-axis direction. At least one of the widths of the main fields in the x- and y-axis directions is set to a value, and exposure pattern data for one chip based on the partitioned main fields is stored as a unit. The stored exposure pattern data is readout a number of times corresponding to the number of chips repeatedly, and each electron beam provides repeated exposure of same regions of the chips.

4. 发明授权

US06667486B2 Electron beam exposure method, electron beam exposure apparatus and device manufacturing method using the same 有权
标题翻译：电子束曝光方法，电子束曝光装置及使用其的装置制造方法
公开(公告)号：US06667486B2
公开(公告)日：2003-12-23
申请号：US10219769
申请日：2002-08-16
申请人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
发明人： Hiroya Ohta , Yasunari Sohda , Norio Saitou , Haruo Yoda , Yoshikiyo Yui , Shin'ichi Hashimoto
IPC分类号： H01J3708
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J37/304 , H01J37/3177
摘要： The present invention provides a high-precision and high-speed electron beam exposure technique which corrects the position of each beam in a multi-beam exposure method without using a deflection array and a huge and high-precision driving circuit. In an electron beam exposure method for forming a desired pattern onto a specimen by independently controlling emission and scanning of a plurality of electron beams, a deviation between a pattern formed by each of the plurality of electron beams and the desired pattern is controlled by shifting the position of pattern data of the pattern formed by each of the plurality of electron beams.
摘要翻译：本发明提供一种高精度和高速电子束曝光技术，其不使用偏转阵列和巨大且高精度的驱动电路来校正多光束曝光方法中的每个光束的位置。在通过独立地控制多个电子束的发射和扫描来形成期望图案到电子束的电子束曝光方法中，由多个电子束中的每一个形成的图案与期望的图案之间的偏差通过使由多个电子束中的每一个形成的图案的图案数据的位置。

5. 发明授权

US07608844B2 Charged particle beam drawing apparatus 有权
标题翻译：带电粒子束拉制装置
公开(公告)号：US07608844B2
公开(公告)日：2009-10-27
申请号：US11136703
申请日：2005-05-25
申请人： Yuji Inoue , Haruo Yoda , Kimiaki Ando , Yoshikiyo Yui
发明人： Yuji Inoue , Haruo Yoda , Kimiaki Ando , Yoshikiyo Yui
IPC分类号： G21K5/10
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , G21K1/08 , H01J37/3174 , H01J2237/31762
摘要： In the present invention, vector data developing unit, ends separating unit, overlap removing unit and bitmapped data generating unit are sequentially connected in order to make pipeline processing. In addition, data of each raster is orderly arranged as a unit so that each processor can process data of each raster at a time. Each processor can make the pipeline processing to fast generate data. In addition, small-scale circuits can be used to realize the system because each raster can be processed as a unit of processing. Moreover, since data is orderly arranged before being processed, multi-valued bitmapped data can be generated in the order of drawing. Therefore, the drawing operation and data generating operation can be performed in parallel without use of any large-scale storage device.
摘要翻译：在本发明中，为了进行流水线处理，顺序地连接矢量数据显影单元，端部分离单元，重叠移除单元和位图数据生成单元。此外，每个光栅的数据被有序地排列成一个单元，使得每个处理器可以一次处理每个光栅的数据。每个处理器可以使流水线处理快速生成数据。此外，可以使用小规模电路来实现系统，因为每个光栅可以作为处理单元被处理。此外，由于在处理之前数据被有序排列，所以可以按照绘制的顺序生成多值位图数据。因此，绘图操作和数据生成操作可以并行执行而不使用任何大型存储设备。

6. 发明授权

US06992307B2 Electron beam source and electron beam exposure apparatus employing the electron beam source 失效
标题翻译：采用电子束源的电子束源和电子束曝光装置
公开(公告)号：US06992307B2
公开(公告)日：2006-01-31
申请号：US10873250
申请日：2004-06-23
申请人： Yoshikiyo Yui , Hiroya Ohta
发明人： Yoshikiyo Yui , Hiroya Ohta
IPC分类号： H01J29/70 , A61N5/00 , G21G5/00
CPC分类号： H01J37/065 , H01J2237/3175
摘要： An electron gun is composed of a hemispherical cathode (1) and a second bias electrode (8) having apertures (9, 7, 11) along an optical axis of an electron beam fired from the electron gun, a first bias electrode (6) and an anode (10), arranged in that order, as well as a controller for variably controlling an electric potential applied to the first and second bias electrodes. The controller, for example, holds the sum of the electric potentials of the first and second bias electrodes relative to the cathode (1) substantially constant. Further, by adding one or more third bias electrode(s) (20) between the first and second bias electrodes (6, 8) as necessary, the intensity of the electron beam discharged from the high-intensity, high-emittance electron gun can be adjusted without affecting the current density angular distribution.
摘要翻译：电子枪由半球形阴极（1）和具有沿着从电子枪发射的电子束的光轴上的孔（9,7,11）的第二偏置电极（8）组成，第一偏置电极（6）和阳极（10），以及用于可变地控制施加到第一和第二偏置电极的电位的控制器。例如，控制器保持第一和第二偏置电极相对于阴极（1）的电位的总和基本上恒定。此外，通过根据需要在第一和第二偏置电极（6,8）之间添加一个或多个第三偏置电极（20），从高强度高发射电子枪放出的电子束的强度可以在不影响电流密度角分布的情况下进行调整。

7. 发明申请

US20050285054A1 Charged particle beam drawing apparatus 有权
标题翻译：带电粒子束拉制装置
公开(公告)号：US20050285054A1
公开(公告)日：2005-12-29
申请号：US11136703
申请日：2005-05-25
申请人： Yuji Inoue , Haruo Yoda , Kimiaki Ando , Yoshikiyo Yui
发明人： Yuji Inoue , Haruo Yoda , Kimiaki Ando , Yoshikiyo Yui
IPC分类号： H01L21/027 , G21K1/08 , G21K5/10 , H01J37/302
CPC分类号： H01J37/3026 , B82Y10/00 , B82Y40/00 , G21K1/08 , H01J37/3174 , H01J2237/31762
摘要： In the present invention, vector data developing unit, ends separating unit, overlap removing unit and bitmapped data generating unit are sequentially connected in order to make pipeline processing. In addition, data of each raster is orderly arranged as a unit so that each processor can process data of each raster at a time. Each processor can make the pipeline processing to fast generate data. In addition, small-scale circuits can be used to realize the system because each raster can be processed as a unit of processing. Moreover, since data is orderly arranged before being processed, multi-valued bitmapped data can be generated in the order of drawing. Therefore, the drawing operation and data generating operation can be performed in parallel without use of any large-scale storage device.
摘要翻译：在本发明中，为了进行流水线处理，顺序地连接矢量数据显影单元，端部分离单元，重叠移除单元和位图数据生成单元。此外，每个光栅的数据被有序地排列成一个单元，使得每个处理器可以一次处理每个光栅的数据。每个处理器可以使流水线处理快速生成数据。此外，可以使用小规模电路来实现系统，因为每个光栅可以作为处理单元被处理。此外，由于在处理之前数据被有序排列，所以可以按照绘制的顺序生成多值位图数据。因此，绘图操作和数据生成操作可以并行执行而不使用任何大型存储设备。

8. 发明授权

US06455211B1 Pattern transfer method and apparatus, and device manufacturing method 有权
标题翻译：图案转印方法和装置以及装置制造方法
公开(公告)号：US06455211B1
公开(公告)日：2002-09-24
申请号：US09243135
申请日：1999-02-03
申请人： Yoshikiyo Yui , Masato Muraki
发明人： Yoshikiyo Yui , Masato Muraki
IPC分类号： G03F900
CPC分类号： G03F9/7084 , G03F7/70425 , G03F9/7003
摘要： The joint precision of a transfer pattern is improved by correcting the relative positions between the partial transfer patterns on a transfer mask and a transfer medium. The positions of alignment marks for the partial transfer patterns on the transfer mask are measured (step 23), and the actual coordinate system of the alignment marks is calculated based on the measured positions (step 25). Parameters that represent the relative relationship between the actual coordinate system calculated in step 25 and a design coordinate system are calculated (step 26), and the transfer positions of the partial transfer patterns to the transfer medium are calculated based on the calculated parameters (step 29). After that, a mask stage and wafer stage are driven based on the transfer positions calculated in step 29 to sequentially transfer patterns by exposure (steps 34 to 40).
摘要翻译：通过校正转印掩模上的部分转印图案和转印介质之间的相对位置，改善了转印图案的联合精度。测量转印掩模上部分转印图案的对准标记的位置（步骤23），并根据测量位置计算对准标记的实际坐标系（步骤25）。计算表示在步骤25中计算的实际坐标系与设计坐标系之间的相对关系的参数（步骤26），并且基于所计算的参数计算部分转印图案到转印介质的转印位置（步骤29 ）。之后，基于步骤29中计算的传送位置驱动掩模台和晶片台，以通过曝光依次传送图案（步骤34至40）。

9. 发明授权

US4713675A Exposure apparatus 失效
标题翻译：曝光装置
公开(公告)号：US4713675A
公开(公告)日：1987-12-15
申请号：US924435
申请日：1986-10-29
申请人： Yoshikiyo Yui
发明人： Yoshikiyo Yui
IPC分类号： G03F7/20 , G03B27/72
CPC分类号： G03F7/70558
摘要： An exposure apparatus for exposing a semiconductor wafer to a pattern of the mask with light from a light source, thereby to transfer the pattern of the mask onto the wafer. The appartus includes a shutter operable for selectively passing/blocking the light from the light source to the wafer, and a control system for controlling the intensity of light emission from the light source in a manner that the intensity becomes greater at the time of exposure operation than that at the time of non-exposure operation. The shutter opening movement for effecting the exposure is initiated after the intensity of light from the light source, when it is increased by the control system, becomes substantially stable. This avoids unpreferable effects, upon exposure, of overshooting, ringing, etc. in the light from the light source, such that the amount of exposure of the wafer can be controlled accurately.
摘要翻译：一种曝光装置，用于利用来自光源的光将半导体晶片曝光到掩模图案，从而将掩模的图案转印到晶片上。该配件包括可操作用于选择性地将光从光源传递/阻挡到晶片的快门，以及用于以曝光操作时强度变大的方式控制来自光源的光发射强度的控制系统比非曝光操作时的要高。在通过控制系统增加来自光源的光强度之后，启动用于进行曝光的快门打开动作变得基本稳定。这避免了在来自光源的光中暴露于过冲，振铃等方面的不利影响，使得可以精确地控制晶片的曝光量。

10. 发明授权

US06466301B1 Transfer apparatus and transfer method 有权
标题翻译：传送装置和传送方法
公开(公告)号：US06466301B1
公开(公告)日：2002-10-15
申请号：US09487314
申请日：2000-01-19
申请人： Yoshikiyo Yui , Masato Muraki
发明人： Yoshikiyo Yui , Masato Muraki
IPC分类号： G03B2742
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/70358 , G03F9/70 , H01J37/3045 , H01J37/3174
摘要： Alignment marks of partial transfer patterns on a transfer mask are measured. On the basis of these measured alignment marks, functions for determining the positions of the alignment marks and the scale magnification in the relative scanning direction are calculated. The start and end positions of transfer of the partial transfer patterns to an object of transfer are calculated, and the scale magnification for moving a mask stage is corrected. The mask stage and a wafer stage are moved to sequentially expose the partial transfer patterns.
摘要翻译：测量转印掩模上部分转印图案的对准标记。基于这些测量的对准标记，计算用于确定对准标记的位置和相对扫描方向的刻度倍率的功能。计算将部分转印图案转印到转印对象的开始和结束位置，并且校正用于移动掩模台的标度放大率。移动掩模台和晶片台以依次暴露部分转印图案。

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