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1. 发明授权

US06835348B2 Method and device for producing open type polymide moldings, and base material for reflective bodies in lighting equipment 失效
标题翻译：用于制造开式聚酰亚胺模制品的方法和装置，以及用于照明设备中的反射体的基材
公开(公告)号：US06835348B2
公开(公告)日：2004-12-28
申请号：US09926143
申请日：2001-09-10
申请人： Haruhiko Hirosue , Shigeo Shibata , Hideaki Machida
发明人： Haruhiko Hirosue , Shigeo Shibata , Hideaki Machida
IPC分类号： B29C4302
CPC分类号： F21V7/22 , B29C35/04 , B29C35/045 , B29C49/00 , B29C51/002 , B29C51/04 , B29C51/10 , B29C51/365 , B29C51/421 , B29C51/424 , B29C51/428 , B29C51/44 , B29C2049/0089 , B29C2791/006 , B29C2791/007 , B29C2793/009 , B29K2079/08 , B29K2105/258 , B29K2995/0017 , B29L2011/0083 , B29L2031/747 , B29L2031/7472 , B29L2031/7542 , F21S41/37 , F21V7/10 , Y10T428/31721
摘要： A polyimide film F is brought into an intimate contact with a molding die 3 having a concave molding surface 3a so as to tightly close the open end thereof, and the polyimide film F is bent to deform only by the pressure difference of gas while being heated in a contactless manner. Molding is conducted by applying depressurization for a space 8 on the side of the molding die 3 relative to the polyimide film F while pressurizing the space 9 on the opposite side for the pressure difference at least in the final stage of the bending deformation so as to be in intimate contact with the concave molding surface 3a.
摘要翻译：聚酰亚胺薄膜F与具有凹形模制表面3a的模制模具3紧密接触，以紧紧地关闭其开口端，并且聚酰亚胺薄膜F仅在加热时仅通过气体压力差而变形以非接触的方式。至少在弯曲变形的最后阶段，通过对成型模具3的相对于聚酰亚胺膜F侧的空间8进行减压，同时对相反侧的空间9施加压差，进行成型，从而与凹形模制表面3a紧密接触。

2. 发明申请

US20060068103A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060068103A1
公开(公告)日：2006-03-30
申请号：US11214738
申请日：2005-08-31
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： C23C16/00
CPC分类号： H01L21/28556 , C23C16/18 , C23C16/34 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a biscyclopentadienyltungsten dihydride, a bismethylcyclopentadienyltungsten dihydride, a bisethylcyclopentadienyltungsten dihydride, and a bisisopropylcyclopentadienyltungsten dihydride.
摘要翻译：提供了能够使用不含卤素的原料的技术，其具有对半导体元件造成不良影响的高可能性，从而容易地形成纯度高的钨膜（硅化钨膜或氮化钨膜）低温。提供了一种用于形成钨膜，硅化钨膜或碳酸钨酸盐膜的成膜材料，其中所述膜的W源是一种或多种选自双环戊二烯基二氢钨，二甲基环戊二烯基二氢化钨，双乙基环戊二烯基二氢化钨和双异丙基环戊二烯基二氢化钨。

3. 发明申请

US20060068101A1 Film forming method 审中-公开
标题翻译：成膜方法
公开(公告)号：US20060068101A1
公开(公告)日：2006-03-30
申请号：US11141615
申请日：2005-06-01
申请人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
发明人： Hideaki Machida , Yoshio Ohshita , Atsushi Ogura , Masato Ishikawa
IPC分类号： C23C16/00
CPC分类号： H01L21/28556 , C23C16/18 , C23C16/34 , C23C16/42
摘要： A technique is provided that is capable of employing raw materials having no halogen, which has a high possibility of exerting a bad influence upon semiconductor elements, thereby to easily form tungsten films (tungsten silicide films or tungsten nitride films) of which purity is high at a low temperature. A film forming material for forming tungsten films, tungsten silicide films, or tungasten nitride films is provided, wherein a W source of said film is one or more chemical compounds selected from the group consisting of a hexadimethylaminoditungsten, a hexaethylmethylaminoditungsten, and a hexadiethylaminoditungsten.
摘要翻译：提供了能够使用不含卤素的原料的技术，其具有对半导体元件造成不良影响的高可能性，从而容易地形成纯度高的钨膜（硅化钨膜或氮化钨膜）低温。提供了一种用于形成钨膜，硅化钨膜或钨酸钠膜的成膜材料，其中所述膜的W源是一种或多种选自六甲基二氨基二钨，六乙基甲基氨基二钨和六
乙基氨基二钨的化合物。

4. 发明申请

US20090191338A1 Film-Deposition Apparatus and Film-Deposition Method 审中-公开
标题翻译：薄膜沉积装置和薄膜沉积方法
公开(公告)号：US20090191338A1
公开(公告)日：2009-07-30
申请号：US12226217
申请日：2007-04-18
申请人： Kenji Matsumoto , Hiroshi Sato , Tatsuya Ohira , Hideaki Machida , Masato Ishikawa
发明人： Kenji Matsumoto , Hiroshi Sato , Tatsuya Ohira , Hideaki Machida , Masato Ishikawa
IPC分类号： C23C16/06 , C23C16/54
CPC分类号： C23C16/18 , C23C16/4482 , H01L21/28556 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A film-deposition apparatus and a film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method are provided. The film-deposition apparatus for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition apparatus comprises: a process vessel capable of being evacuated; a table on which the object to be processed can be placed, the table being disposed in the process vessel; and a source-gas supply part connected to the process vessel, the source-gas supply part being configured to supply, into the process vessel, a source gas including an organic metal material containing manganese or a metal complex material containing manganese. The film-deposition method for forming a manganese film on a surface of an object to be processed by a CVD method (Chemical Vapor Deposition method), the film-deposition method comprises the steps of: placing an object to be processed in an inside of a process vessel capable of being evacuated; and forming a manganese film on a surface of the object to be processed in the process vessel by the CVD method with the use of a source gas including an organic metal material containing manganese or a metal complex material containing manganese.
摘要翻译：提供了一种通过CVD方法在待处理物体的表面上形成锰膜的成膜装置和膜沉积方法。用于通过CVD法（化学气相沉积法）在待处理物体的表面上形成锰膜的成膜装置，所述成膜装置包括：能够被抽真空的处理容器; 可以放置待处理对象的工作台，该工作台设置在处理容器中; 以及连接到处理容器的源气供给部，所述源气供给部构成为向所述处理容器供给包含含有锰的有机金属材料或含有锰的金属络合物的源气体。通过CVD法（化学气相沉积法）在待处理物体的表面上形成锰膜的成膜方法，成膜方法包括以下步骤：将待处理物体放置在能够被抽真空的处理容器; 以及使用包含含有锰的有机金属材料或含有锰的金属络合物的源气体，通过CVD法在处理容器中的被处理物的表面上形成锰膜。

5. 发明授权

US06492031B1 Reflector substrate for illumination device and reflector for illumination device 失效
标题翻译：用于照明装置的反射器基板和用于照明装置的反射器
公开(公告)号：US06492031B1
公开(公告)日：2002-12-10
申请号：US09658183
申请日：2000-09-08
申请人： Hideki Moriyama , Uhara Kenji , Hideaki Machida
发明人： Hideki Moriyama , Uhara Kenji , Hideaki Machida
IPC分类号： B32B1508
CPC分类号： F21V7/22 , C08G73/10 , C08G73/1042 , C08G73/1053 , F21S41/37 , Y10T428/31681 , Y10T428/31721
摘要： A reflector substrate (1) adapted for use in illumination device (8) comprises an a molded aromatic polyimide film wherein the film has a glass transition temperature from 210 to 290° C. and said polyimide film has structural units of general formula (I) and (II): wherein R1 is selected from the group consisting of: wherein R2 is selected from the group consisting of: and said polyimide film has the molar ratio X:Y from 100:0 to 20:80.
摘要翻译：适用于照明装置（8）的反射器基板（1）包括模制的芳族聚酰亚胺膜，其中所述膜具有210至290℃的玻璃化转变温度，并且所述聚酰亚胺膜具有通式（I）的结构单元，和（II）：其中R 1选自：其中R 2选自：所述聚酰亚胺膜的摩尔比X:Y为100:0至20:80。

6. 发明授权

US5663391A Manufacturing process for producing a .beta. copper diketone complex 失效
标题翻译：生产β-铜二酮络合物的制备方法
公开(公告)号：US5663391A
公开(公告)日：1997-09-02
申请号：US611654
申请日：1996-03-06
申请人： Hideaki Machida , Hiroshi Kokubun
发明人： Hideaki Machida , Hiroshi Kokubun
IPC分类号： C07F1/08 , C07F1/00 , C23C16/18 , H01L21/285 , C07F19/00
CPC分类号： C07F1/005
摘要： A process for producing a .beta. copper diketone complex which consists of the steps: (a) mixing and reacting Cu.sub.2 O, 1,1,1,5,5,5-Hexafluoro-2, 4-pentanedione, and an additional cuprous L, an electronic donator; and (b) dehydrating the crude material, which is performed at the same time and/or right after the reaction in step (a).
摘要翻译：一种制备β-铜二酮络合物的方法，其由以下步骤组成：（a）将Cu 2 O，1,1,1,5,5,5-六氟-2,4-戊二酮和另外的亚铜L混合并反应，电子捐赠者和（b）在步骤（a）中同时和/或反应之后进行的粗物质脱水。

7. 发明授权

US07022606B2 Underlayer film for copper, and a semiconductor device including the underlayer film 失效
标题翻译：用于铜的底层膜和包括下层膜的半导体器件
公开(公告)号：US07022606B2
公开(公告)日：2006-04-04
申请号：US10732798
申请日：2003-12-11
申请人： Noboru Mikami , Hideaki Machida
发明人： Noboru Mikami , Hideaki Machida
IPC分类号： H01L21/44
CPC分类号： H01L21/76841 , C23C16/0272 , C23C16/18 , H01L21/28556
摘要： An underlayer film-forming material for copper, a method for forming the underlayer, an underlayer film for copper, and a semiconductor device including a substrate, the underlayer and copper wiring film, which prevents copper diffusion as well as provides superior adhesion to a copper wiring film, even if the film is thinner than conventional barrier metals. The underlayer film-forming material for copper is formed from a compound represented by a (R1R2)P—(R)n—Si(X1X2X3), wherein at least one of X1, X2, and X3 represents a hydrolysable group; each of R1 and R2 represents an alkyl group; R represents a divalent linear organic group which is selected from an alkylene group, an aromatic ring, and an alkylene group including an aromatic ring; and n is an integer from 1 to 6.
摘要翻译：铜的下层成膜材料，底层的形成方法，铜的下层膜以及包含衬底，底层和铜布线膜的半导体器件，其防止铜扩散以及提供对铜的优异的粘附性布线膜，即使该膜比常规屏障金属更薄。用于铜的下层膜形成材料由以下化合物形成：由（R 1 R 2）2 - （R）N - Si（X 1 X 2 X 3 X 3），其中X 1，X 2，X 3，X 3中的至少一个， 2，X 3表示可水解基团; R 1和R 2中的每一个代表烷基; R表示选自亚烷基，芳香环和包含芳环的亚烷基的二价线性有机基团; n为1〜6的整数。

8. 发明申请

US20050059243A1 Film forming material, film forming method, and silicide film 有权
标题翻译：成膜材料，成膜方法和硅化物膜
公开(公告)号：US20050059243A1
公开(公告)日：2005-03-17
申请号：US10895871
申请日：2004-07-22
申请人： Hideaki Machida , Yoshio Ohshita , Masato Ishikawa , Takeshi Kada
发明人： Hideaki Machida , Yoshio Ohshita , Masato Ishikawa , Takeshi Kada
IPC分类号： C23C16/42 , H01L21/28 , H01L21/285 , H01L21/44
CPC分类号： H01L21/28518 , C23C16/42
摘要： A technique is provided of forming silicide films usable for next-generation transistors through a CVD process. In the technique of forming a silicide film formed of Ni and Si, where one or more chemical compounds represented with the following general formula [I] are used as an Ni source: General Formula [I] where R1, R2, R3, R4, R5, R6, R7, R8, R9, or R10 is H or a hydrocarbon group.
摘要翻译：提供了通过CVD工艺形成可用于下一代晶体管的硅化物薄膜的技术。在形成由Ni和Si形成的硅化物膜的技术中，其中使用由以下通式[I]表示的一种或多种化合物作为Ni源：通式[I]其中R1，R2，R3，R4， R5，R6，R7，R8，R9或R10是H或烃基。

9. 发明授权

US5468894A Method of manufacturing FSi(OR).sub.3 失效
标题翻译：制造FSi（OR）的方法3
公开(公告)号：US5468894A
公开(公告)日：1995-11-21
申请号：US215568
申请日：1994-03-22
申请人： Ryuichi Yamaguchi , Koichi Kiso , Kiyoshi Tazuke , Hideaki Machida , Katsuhiro Mihirogi , Yukichi Takamatsu
发明人： Ryuichi Yamaguchi , Koichi Kiso , Kiyoshi Tazuke , Hideaki Machida , Katsuhiro Mihirogi , Yukichi Takamatsu
IPC分类号： C07F7/02 , C07F7/08
CPC分类号： C07F7/025
摘要： By reacting Si(OR).sub.4 with HF, FSi (OR).sub.3 of high purity can be obtained easily and economically.
摘要翻译：通过使Si（OR）4与HF反应，可以容易且经济地获得高纯度的FSi（OR）3。

10. 发明申请

US20090130326A1 FILM FORMING MATERIAL AND METHOD OF FILM FORMING 审中-公开
标题翻译：电影成膜材料及成膜方法
公开(公告)号：US20090130326A1
公开(公告)日：2009-05-21
申请号：US11813622
申请日：2006-01-10
申请人： Hideaki Machida , Ikuyo Muramoto , Young Hua Xu
发明人： Hideaki Machida , Ikuyo Muramoto , Young Hua Xu
IPC分类号： C23C4/04 , C07F7/08 , B05D3/02 , C23C16/00
CPC分类号： C23C16/401 , H01L21/02126 , H01L21/02214 , H01L21/02274 , H01L21/31633
摘要： An interlayer insulating film enabling an enhancement in a signal processing speed to be obtained, of which a dielectric constant is 2.2 or less. There is provided a method of forming a film on a substrate in accordance with a chemical vapor deposition process, comprising: the feeding step of feeding (c-C5H9)2Si(OCH3)2 by inert gas bubbling; and the deposition step of causing any of decomposition product resulting from decomposition of the (c-C5H9)2Si(OCH3)2 fed in the above feeding step to deposit on the substrate.
摘要翻译：能够提高其介电常数为2.2以下的信号处理速度的层间绝缘膜。提供了根据化学气相沉积方法在基板上形成膜的方法，包括：通过惰性气体鼓泡进料（c-C 5 H 9）2 Si（OCH 3）2的进料步骤; 以及使在上述进料步骤中进料的（c-C 5 H 9）2 Si（OCH 3）2分解产生的分解产物的沉积步骤沉积在基材上的沉积步骤。

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