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    • 1. 发明授权
    • Procedure for the manufacture of bipolar transistors without epitaxy and
with fully implanted base and collector regions which are
self-positioning relative to each other
    • 用于制造没有外延的双极晶体管和相对于彼此自定位的完全注入的基极和集电极区域的方法
    • US5571731A
    • 1996-11-05
    • US215187
    • 1994-03-21
    • Hartmut Gr utzediekJoachim ScheererWolfgang WinklerMichel PierschelKarl-Ernst Ehwald
    • Hartmut Gr utzediekJoachim ScheererWolfgang WinklerMichel PierschelKarl-Ernst Ehwald
    • H01L21/331H01L29/732H01L21/265H01L21/00H01L21/30H01R21/22
    • H01L29/66272H01L29/732
    • A method of fabricating a semiconductor device. A series of layers is deposited on a semiconductor substrate of a first conductivity type to form a shielding arrangement, including an upper part and a lower part, to provide a shield against accelerated ions. This is followed by forming openings in the shielding arrangement by microlithographic processes and anisotropic etching, and then implanting ions via the openings to form one of a base area and a base-connection area of the first conductivity type. Edges of the openings are displaced by isotropic etching of the lower part of the shielding arrangement. Ions are implanted which have been accelerated to energies sufficient to penetrate the one of the base area and base-connection area and a portion of the substrate underlying the one of the base area and base-connection area to form a sub-collector and a graded collector of a second conductivity type for completely encircling and separating a base from the substrate, wherein the sub-collector is more heavily doped than the collector. The base is formed by one of (i) implanting ions between the step of forming openings and the step of implanting ions accelerated, and (ii) implanting ions after the step of implanting ions accelerated. The method further includes forming an emitter, depositing an insulating layer, forming contacts to the base, the emitter and the collector, and forming a metalization arrangement.
    • 一种制造半导体器件的方法。 一系列层沉积在第一导电类型的半导体衬底上,以形成包括上部和下部的屏蔽装置,以提供防止加速离子的屏蔽。 然后通过微光刻和各向异性蚀刻在屏蔽装置中形成开口,然后通过开口注入离子以形成第一导电类型的基极区域和基极连接区域之一。 通过对屏蔽装置的下部进行各向同性蚀刻来移动开口的边缘。 被植入的离子被加速到足以穿透基底区域和基底连接区域中的一个的能量以及基底区域和基底连接区域之一的基底的一部分以形成子收集器和分级 用于完全环绕和分离基底与基底的第二导电类型的集电极,其中子集电极比集电极更重掺杂。 基底由(i)在形成开口的步骤和注入离子加速的步骤之间注入离子,和(ii)在植入离子加速的步骤之后注入离子之一形成。 该方法还包括形成发射极,沉积绝缘层,与基底,发射极和集电极形成触点,并形成金属化装置。
    • 2. 发明授权
    • Cmos-compatible lateral dmos transistor and method for producing such a transistor
    • Cmos兼容横向晶体管及其制造方法
    • US06878995B2
    • 2005-04-12
    • US10239933
    • 2001-03-24
    • Karl-Ernst EhwaldBernd HeinemannDieter KnollWolfgang Winkler
    • Karl-Ernst EhwaldBernd HeinemannDieter KnollWolfgang Winkler
    • H01L21/336H01L29/06H01L29/10H01L29/78H01L21/335
    • H01L29/66659H01L29/0615H01L29/1033H01L29/7835
    • A CMOS-compatible DMOS transistor can be designed by virtue of a suitable layout configuration optionally for very high drain voltages or for power amplification at very high frequencies and which can be produced at a low level of additional cost in comparison with a conventional sub-μm production technology for CMOS circuits. A gate insulator of the transistor is of a unitary thickness under a control gate in the entire (active) region through which current flows. A zone of increased doping concentration (well region) which is near the surface and which determines the transistor threshold voltage is so arranged under the control gate that it occupies the entire area under the control gate which is on the active region and ends within a so-called drift space between the control gate and a highly doped drain region. The entire surface of the drift space is covered by a zone of the conductivity type of the drain region (VLDD), which is lowly doped in comparison with the highly doped drain region.
    • 可以通过适当的布局配置来设计CMOS兼容的DMOS晶体管,用于非常高的漏极电压或在非常高的频率下进行功率放大,并且可以以与常规子母线相比低的额外成本来生产CMOS兼容的DMOS晶体管 CMOS电路的生产技术。 在电流流过的整个(有源)区域中,晶体管的栅极绝缘体在控制栅极下方具有整体厚度。 靠近表面并确定晶体管阈值电压的增加的掺杂浓度(阱区)的区域被布置在控制栅极下方,其占据位于有源区上的控制栅极下方的整个区域并且结束于其中 在控制栅极和高掺杂漏极区之间的偏移漂移空间。 漂移空间的整个表面由漏区(VLDD)的导电类型的区域覆盖,其与高掺杂漏极区相比被低掺杂。
    • 7. 发明授权
    • DC motor with suppressor
    • 直流电机带抑制器
    • US07755232B2
    • 2010-07-13
    • US11574561
    • 2005-07-19
    • Wolfgang WinklerErik MaurerTobias KuechenFernando Silva
    • Wolfgang WinklerErik MaurerTobias KuechenFernando Silva
    • H02K11/00
    • H02K11/026H02K5/225H02K11/024
    • A DC motor (1), in particular for a blower device of a motor vehicle, having a pole housing (10), a plurality of contact elements (13) effecting the bonding to a collector (12), a pole housing opening (16) making it possible to feed electrical connection lines (18) through into the pole housing (10), and an interference suppressor (28, 28.1) serving to reduce and/or eliminate line-conducted electrical interference signals, in which the interference suppressor (28, 28.1) has at least one leadthrough capacitor (48), which is located in an electrical path of at least one connection line (18). The invention further relates to an electrical interference suppressor (28, 28.1) for an electrical device located in a housing, in particular for a DC motor (1) in a pole housing (10), as well as to the use of a leadthrough capacitor (48, 48.1) for interference suppression in a DC motor (1).
    • 特别是用于机动车辆的送风装置的直流电动机(1)具有极壳体(10),多个接触元件(13),其与集电器(12)结合,极壳体开口(16) )使得可以将电连接线(18)馈送到极壳体(10)中;以及干涉抑制器(28,28.1),其用于减少和/或消除线路传导的电干扰信号,其中干扰抑制器 28,28.1)具有至少一个引线穿过电容器(48),其位于至少一个连接线(18)的电路径中。 本发明还涉及一种用于位于外壳中的电气设备的电气干扰抑制器(28,28.1),特别是用于电极外壳(10)中的直流电动机(1),以及使用引线电容器 (48,48.1)用于直流电动机(1)中的干扰抑制。
    • 10. 发明申请
    • Mini fan to be fixed in a recess of a wall
    • 迷你风扇固定在墙壁的凹槽中
    • US20050271515A1
    • 2005-12-08
    • US10525118
    • 2004-06-05
    • Wolfgang WinklerNils Rapp
    • Wolfgang WinklerNils Rapp
    • F03B1/02F04D25/12F04D29/60F04D29/66H05K7/20
    • H05K7/20172F04D25/12F04D29/601F04D29/668
    • A mini-fan (126) is implemented for installation in a recess (124) of a wall (122), which wall is equipped on the periphery of the recess (124) with a plurality of retaining members (128, 129). The fan has, for air guidance, a housing (136) that, in its installed position, projects with a housing portion (127) approximately complementary to the recess (124) of the wall (122) into that recess. Arranged on the periphery of that housing portion is at least one part (138) made of an elastomeric material, with which part the fan (126) is introducible, upon its installation with the part (138) made of elastomeric material with displacement along the wall (122), into the retaining members (128, 129), in order to bring that part (138), in the installed position, at least locally into sealing contact against the wall (122).
    • 微型风扇(126)被实施用于安装在壁(122)的凹部(124)中,该壁在凹部(124)的周边上装有多个保持构件(128,129)。 风扇具有用于空气引导的壳体(136),其在其安装位置处突出有与壁(122)的凹部(124)大致互补的壳体部分(127)进入该凹部。 布置在该壳体部分的周边上的是由弹性体材料制成的至少一个部分(138),其中风扇(126)可部分地被引入其中,部件(138)由弹性体材料制成,该部件(138)沿着 壁(122)进入保持构件(128,129)中,以便将处于安装位置的部分(138)至少局部地与壁(122)密封接触。