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1. 发明申请

US20120100302A1 METHOD FOR PRODUCING POLYCRYSTALLINE SILICON RODS 审中-公开
标题翻译：生产多晶硅棒的方法
公开(公告)号：US20120100302A1
公开(公告)日：2012-04-26
申请号：US13267111
申请日：2011-10-06
申请人： Laszlo FABRY , Thomas ALTMANN , Heinz KRAUS
发明人： Laszlo FABRY , Thomas ALTMANN , Heinz KRAUS
IPC分类号： B05D3/10
CPC分类号： C01B33/035
摘要： The invention relates to a method for producing polycrystalline silicon rods by deposition of silicon on at least one thin rod in a reactor, wherein, before the silicon deposition, hydrogen halide at a temperature of 400-1000° C. is introduced into the reactor containing at least one thin rod and is irradiated by means of UV light, as a result of which halogen and hydrogen radicals arise and the volatile halides that form are removed from the reactor.
摘要翻译：本发明涉及通过在反应器中的至少一个细棒上沉积硅来生产多晶硅棒的方法，其中在硅淀积之前，将400-1000℃温度下的卤化氢引入含有至少一根细杆并通过紫外光照射，结果发生卤素和氢根，形成的挥发性卤化物从反应器中除去。

2. 发明授权

US06645862B2 Double-side polishing process with reduced scratch rate and device for carrying out the process 有权
标题翻译：减少划伤率的双面抛光工艺和进行该工艺的装置
公开(公告)号：US06645862B2
公开(公告)日：2003-11-11
申请号：US09989550
申请日：2001-11-20
申请人： Guido Wenski , Johann Glas , Thomas Altmann , Gerhard Heier
发明人： Guido Wenski , Johann Glas , Thomas Altmann , Gerhard Heier
IPC分类号： H01L21302
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/08
摘要： A process for producing semiconductor wafers by double-sided polishing between two rotating, upper and lower polishing plates, which are covered with polishing cloth, while an alkaline polishing abrasive with colloidal solid fractions is being supplied, the semiconductor wafers being guided by carriers which have circumferential gear teeth and are set in rotation by complementary outer gear teeth and inner gear teeth of the polishing machine, which is distinguished by the following process steps: (a) at least one of the two sets of gear teeth of the polishing machine is at least from time to time sprayed with a liquid which substantially comprises water, (b) the alkaline polishing abrasive is fed continuously to the semiconductor wafers in a closed supply device. There is also a device which is suitable for carrying out the process.
摘要翻译：在提供具有胶体固体部分的碱性抛光磨料的同时，在被抛光布覆盖的两个旋转，上和下抛光板之间通过双面抛光来生产半导体晶片的方法，半导体晶片由具有周向齿轮齿，并由抛光机的互补外齿轮齿和内齿轮齿旋转，其特征在于以下工艺步骤：（a）抛光机的两组齿轮齿中的至少一个处于至少不时地用基本上包含水的液体喷雾，（b）碱性抛光磨料在封闭的供应装置中连续地供给到半导体晶片。还有一种适用于执行该过程的装置。

3. 发明授权

US06458688B1 Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer 有权
标题翻译：具有改善的平坦度的半导体晶片，以及用于制造半导体晶片的工艺
公开(公告)号：US06458688B1
公开(公告)日：2002-10-01
申请号：US09491649
申请日：2000-01-27
申请人： Guido Wenski , Thomas Altmann , Ernst Feuchtinger , Willibald Bernwinkler , Wolfgang Winkler , Gerhard Heier
发明人： Guido Wenski , Thomas Altmann , Ernst Feuchtinger , Willibald Bernwinkler , Wolfgang Winkler , Gerhard Heier
IPC分类号： H01L214763
CPC分类号： H01L21/02024 , B24B37/042 , B24B37/08
摘要： A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 &mgr;m and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 &mgr;m greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 &mgr;m greater than the thickness of the carrier.
摘要翻译：半导体晶片具有基于半导体晶片的前表面上的表面格栅的部分区域的前表面和后表面以及平坦度值，其具有小于或等于0.13μm的最大局部平坦度值SFQRmax和单独的SFQR 在半导体晶片的周边区域中的值与半导体晶片的中心区域的值没有显着差异。还有一种制造该半导体晶片的方法，其中半导体晶片的起始厚度比载体的厚度大20至200微米，并且半导体晶片被抛光直到半导体晶片的端部厚度为2至20μm 大于载体的厚度。

4. 发明授权

US5952545A Nucleic acid molecules encoding cytochrome P450-type proteins involved in the brassinosteroid synthesis in plants 失效
标题翻译：编码细胞色素P450型蛋白质的核酸分子参与植物油菜素类固醇合成
公开(公告)号：US5952545A
公开(公告)日：1999-09-14
申请号：US622166
申请日：1996-03-27
申请人： Csaba Koncz , Jaideep Mathur , Miklos Szekeres , Thomas Altmann
发明人： Csaba Koncz , Jaideep Mathur , Miklos Szekeres , Thomas Altmann
IPC分类号： C12N15/09 , A01H5/00 , C07K16/40 , C12N1/15 , C12N1/21 , C12N5/10 , C12N9/00 , C12N9/02 , C12N15/29 , C12N15/53 , C12N15/82 , C12Q1/68 , G01N33/15 , G01N33/50 , A01H4/00 , C12N15/00
CPC分类号： C12N9/93 , C12N15/8243 , C12N15/8298 , G01N33/5097 , G01N2500/00
摘要： The invention describes nucleic acid molecules encoding cytochrome P450-t proteins involved in the brassionosteroid synthesis in plants, transgenic plant cells and plants containing such nucleic acid molecules as well as processes for the identification of other proteins involved in brassinosteroid synthesis and processes for the identification of substances acting as brassinosteroids or as brassinosteroid inhibitors in plants.
摘要翻译：本发明描述了编码参与植物中的胸苷酸类固醇合成的细胞色素P450型蛋白质的核酸分子，含有这种核酸分子的转基因植物细胞和植物以及用于鉴定涉及油菜素类固醇合成的其它蛋白质的方法以及用于鉴定作为油菜素类固醇或作为植物油菜素类固醇抑制剂的物质。

5. 发明授权

US07631407B2 Machine tool and method for cutting machining of work pieces 有权
标题翻译：用于切削加工件的机床和方法
公开(公告)号：US07631407B2
公开(公告)日：2009-12-15
申请号：US11706008
申请日：2007-02-13
申请人： Achim Feinauer , Thomas Altmann , Pavel Blazek
发明人： Achim Feinauer , Thomas Altmann , Pavel Blazek
IPC分类号： B23Q3/157 , B23P23/02
CPC分类号： B23B3/065 , B23B3/30 , Y10T29/5109 , Y10T29/5114 , Y10T82/25 , Y10T82/2521 , Y10T409/305824 , Y10T483/165
摘要： A machine tool for cutting machining of work pieces has a tool spindle and a work piece spindle. The work piece spindle is a hollow spindle having a through hole extending through the spindle and a holding mechanism for holding a work piece at one end. The work piece held in the holding mechanism can be machined through the through hole by means of a machining tool held in the tool spindle.
摘要翻译：用于切削加工件的机床具有刀具主轴和工件主轴。工件主轴是具有延伸穿过主轴的通孔的中空主轴和用于在一端保持工件的保持机构。保持在保持机构中的工件可以通过保持在工具主轴中的加工工具通过通孔加工。

6. 发明授权

US06514424B2 Process for the double-side polishing of semiconductor wafers and carrier for carrying out the process 有权
标题翻译：用于半导体晶片和载体的双面抛光的工艺用于实施该工艺
公开(公告)号：US06514424B2
公开(公告)日：2003-02-04
申请号：US09826135
申请日：2001-04-04
申请人： Guido Wenski , Gerhard Heier , Wolfgang Winkler , Thomas Altmann
发明人： Guido Wenski , Gerhard Heier , Wolfgang Winkler , Thomas Altmann
IPC分类号： H01L2100
CPC分类号： B24B41/067 , B24B37/08 , H01L21/02024
摘要： A process for the double-side polishing of semiconductor wafers between two polishing plates which rotate in opposite directions and are covered with polishing cloth, so that at least 2 &mgr;m of semiconductor material is removed. The semiconductor wafers lay in plastic-lined cutouts in a set of a plurality of planar carriers which are made from steel and the mean thickness of which is 2 to 20 &mgr;m smaller than the mean thickness of the fully polished semiconductor wafers. The set comprises only those carriers whose difference in thickness is at most 5 &mgr;m, and each carrier belonging to the set has at least one unambiguous identification feature which assigns it to the set. An item of information contained in the identification feature is used in order for the plastic linings to be exchanged at fixed intervals and to ensure that the semiconductor wafers remain in the same order after the polishing as before the polishing. There is also a carrier which is suitable for carrying out the process.
摘要翻译：在两个抛光板之间进行双面抛光的方法，该两个抛光板以相反的方向旋转并被抛光布覆盖，以至于除去了至少2微米的半导体材料。半导体晶片放置在由钢制成的多组平面载体的一组塑料衬里的切口中，其平均厚度比完全抛光的半导体晶片的平均厚度小2至20μm。该集合仅包括厚度差为5mum以下的载波，属于该集合的每个载波具有至少一个明确的识别特征，将其分配给该集合。使用包含在识别特征中的信息项目，以便以固定的间隔更换塑料衬里，并确保半导体晶片在抛光之后保持与抛光之前相同的顺序。还有一个适用于执行该过程的载体。

7. 发明申请

US20100145625A1 DETERMINATION AND PREDICTION OF THE EXPRESSION OF TRAITS OF PLANTS FROM THE METABOLITE PROFILE AS A BIOMARKER 审中-公开
公开(公告)号：US20100145625A1
公开(公告)日：2010-06-10
申请号：US12520845
申请日：2007-12-21
申请人： Thomas Altmann , Lothar Willmitzer , Joachim Selbig , Rhonda C. Meyer , Matthias Steinfath , Jan Lisec , Oliver Fiehn
发明人： Thomas Altmann , Lothar Willmitzer , Joachim Selbig , Rhonda C. Meyer , Matthias Steinfath , Jan Lisec , Oliver Fiehn
IPC分类号： G06F19/00 , G06F15/18 , G06N5/02 , C12Q1/68 , G06F17/10
CPC分类号： G01N33/5097 , G01N30/7206
摘要： The present invention relates to a method for determining the correlation between the metabolite profiles (MPs) and the expression or potential for expression of a trait of a group of plants, and further to a method for determining or predicting the expression of a trait of a plant by taking advantage of the determined MP of said plant and a determined correlation between the MPs and the expression or potential for the expression of said trait in a group of plants.Particularly, the present invention relates to a method for determining or predicting the biomass production/growth rate of a plant by taking advantage of the determined MP of said plant and a determined correlation between the MPs and the biomass production/growth rate or the potential for biomass production/growth rate of a group of plants.The present invention also relates to a method for breeding of a plant that takes advantage of a method of determining the expression or potential for expression of a trait of said plant according to any one of the methods as disclosed, and selecting said plant on the basis of the expression or potential for expression of said trait. Furthermore, the present invention relates to a method for identifying quantitative trait loci (QTLs) for a trait or for the potential for expression of a trait of a group of plants comprising the step of identifying QTLs for metabolite combinations showing correlation with the expression or potential for expression of said trait of said group of plants.The present invention also relates to and a method for identifying a candidate gene involved in the determination of expression or potential for expression of a trait of a plant comprising the step of isolating a gene corresponding to any one of the QTLs as identified by the corresponding method of the present invention.Additionally, the present invention relates to a method of screening for a plant that exhibits a desired expression or potential for expression of a trait as well as to a method of determining whether a treatment influences the expression or potential for expression of a trait of a plant.

8. 发明申请

US20080038178A1 Method And Device For Producing High Purity Polycrystalline Silicon With A Reduced Dopant Content 有权
标题翻译：用于生产具有降低掺杂剂含量的高纯度多晶硅的方法和装置
公开(公告)号：US20080038178A1
公开(公告)日：2008-02-14
申请号：US11834135
申请日：2007-08-06
申请人： Thomas Altmann , Hans-Peter Sendlinger , Ivo Crossmann
发明人： Thomas Altmann , Hans-Peter Sendlinger , Ivo Crossmann
IPC分类号： C01B33/035
CPC分类号： C01B33/029 , C01B33/03 , C01B33/035
摘要： In the batch production of high purity polycrystalline silicon, in which a U-shaped silicon carrier body is fastened in an open deposition reactor, the deposition reactor is hermetically sealed, the U-shaped carrier body is heated electrical current, a silicon-containing reaction gas and hydrogen are introduced into the reactor through a supply line so that silicon from the reaction gas is deposited on the carrier body, the diameter of the carrier body increases and a waste gas formed is removed from the deposition reactor through a discharge line, and, after a desired diameter of the polysilicon rod is reached, deposition is terminated, the carrier body is cooled to room temperature, the reactor is opened, the carrier body is removed from the reactor and a second U-shaped silicon carrier body made of silicon is fastened in the deposition reactor, an inert gas is fed through the supply and discharge lines into the open reactor from at least the time when the reactor is opened to extract the first carrier body with deposited silicon, until at least the time when the reactor is closed in order to deposit silicon on the second carrier body.
摘要翻译：在批量生产高纯度多晶硅的过程中，U型硅载体主体紧固在开放式沉积反应器中，沉积反应器被气密密封，U形载体主体被加热电流，含硅反应气体和氢气通过供应管线被引入反应器中，使得来自反应气体的硅沉积在载体上，载体主体的直径增加，并且形成的废气通过排出管线从沉积反应器中除去，在达到多晶硅棒的期望直径之后，终止沉积，将载体主体冷却至室温，反应器打开，载体从反应器中取出，第二U形硅载体由硅制成被固定在沉积反应器中，惰性气体至少从反应器打开到外部的时候通过供给和排出管线进入开放式反应器将具有沉积硅的第一载体体直到至少反应器关闭的时间以将硅沉积在第二载体上。

9. 发明授权

US06793837B2 Process for material-removing machining of both sides of semiconductor wafers 有权
标题翻译：用于半导体晶片两侧材料去除加工的工艺
公开(公告)号：US06793837B2
公开(公告)日：2004-09-21
申请号：US10174139
申请日：2002-06-18
申请人： Guido Wenski , Thomas Altmann , Gerhard Heier , Wolfgang Winkler , Gunther Kann
发明人： Guido Wenski , Thomas Altmann , Gerhard Heier , Wolfgang Winkler , Gunther Kann
IPC分类号： B44C122
CPC分类号： H01L21/02024 , B24B17/10 , B24B37/08
摘要： A process is for material-removing machining, on both sides simultaneously, of semiconductor wafers having a front surface and a back surface, the semiconductor wafers resting in carriers which are set in rotation by means of an annular outer drive ring and an annular inner drive ring and being moved between two oppositely rotating working disks in a manner which can be described by means of in each case one path curve relative to the upper working disk and one path curve relative to the lower working disk, wherein the two path curves after six loops around the center have the appearance of still being open, and at each point have a radius of curvature which is at least as great as the radius of the inner drive ring.
摘要翻译：一种方法是在半导体晶片具有前表面和后表面的同时在两面同时进行材料去除加工，半导体晶片位于载体中，该载体通过环形外驱动环和环形内驱动在两个相对旋转的工作盘之间移动，可以通过在每种情况下通过相对于上工作盘的一个路径曲线和相对于下工作盘的一个路径曲线来描述，其中在六个之后的两个路径曲线围绕中心的环路具有仍然是开放的外观，并且在每个点处具有至少与内部驱动环的半径一样大的曲率半径。

10. 发明授权

US07927571B2 Method and device for producing high purity polycrystalline silicon with a reduced dopant content 有权
标题翻译：用于生产具有降低的掺杂剂含量的高纯度多晶硅的方法和装置
公开(公告)号：US07927571B2
公开(公告)日：2011-04-19
申请号：US11834135
申请日：2007-08-06
申请人： Thomas Altmann , Hans Peter Sendlinger , Ivo Croessmann
发明人： Thomas Altmann , Hans Peter Sendlinger , Ivo Croessmann
IPC分类号： C01B33/035 , H01L21/322 , C30B25/00 , C30B35/00
CPC分类号： C01B33/029 , C01B33/03 , C01B33/035
摘要： In the batch production of high purity polycrystalline silicon, in which a U-shaped silicon carrier body is fastened in an open deposition reactor, the deposition reactor is hermetically sealed, the U-shaped carrier body is heated electrical current, a silicon-containing reaction gas and hydrogen are introduced into the reactor through a supply line so that silicon from the reaction gas is deposited on the carrier body, the diameter of the carrier body increases and a waste gas formed is removed from the deposition reactor through a discharge line, and, after a desired diameter of the polysilicon rod is reached, deposition is terminated, the carrier body is cooled to room temperature, the reactor is opened, the carrier body is removed from the reactor and a second U-shaped silicon carrier body made of silicon is fastened in the deposition reactor, an inert gas is fed through the supply and discharge lines into the open reactor from at least the time when the reactor is opened to extract the first carrier body with deposited silicon, until at least the time when the reactor is closed in order to deposit silicon on the second carrier body.
摘要翻译：在批量生产高纯度多晶硅的过程中，U型硅载体主体紧固在开放式沉积反应器中，沉积反应器被气密密封，U形载体主体被加热电流，含硅反应气体和氢气通过供应管线被引入反应器中，使得来自反应气体的硅沉积在载体上，载体主体的直径增加，并且形成的废气通过排出管线从沉积反应器中除去，在达到多晶硅棒的期望直径之后，终止沉积，将载体主体冷却至室温，反应器打开，载体从反应器中取出，第二U形硅载体由硅制成被固定在沉积反应器中，惰性气体至少从反应器打开到外部的时候通过供给和排出管线进入开放式反应器将具有沉积硅的第一载体体直到至少反应器关闭的时间以将硅沉积在第二载体上。

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