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1. 发明授权

US06178221B1 Lithography reflective mask 有权
标题翻译：光刻反光面膜
公开(公告)号：US06178221B1
公开(公告)日：2001-01-23
申请号：US09205790
申请日：1998-12-04
申请人： Harry Levinson , Khanh B. Nguyen
发明人： Harry Levinson , Khanh B. Nguyen
IPC分类号： G21K500
CPC分类号： G03F7/70283 , B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/70233
摘要： A reflective lithography mask (12) including a substrate (40); a reflective coating (42); a plurality of absorbing blocks (44) covering certain regions of the reflective coating (42) in a manner corresponding to a desired circuit pattern; and a plurality of buffer blocks (46) situated between the covered regions of the reflective coating and the absorbing blocks. The buffer blocks (46) are made of an electrically conducting material, such as carbon in graphite form; tin oxide (and materials based on this compound) and/or indium oxide (and materials based on this compound). Since the buffer material is electrically conducting, rather than insulating, the risk of electrostatic discharge damage is reduced.
摘要翻译：一种包括衬底（40）的反射光刻掩模（12）; 反射涂层（42）; 以对应于期望的电路图案的方式覆盖所述反射涂层（42）的某些区域的多个吸收块（44）; 以及位于反射涂层的被覆区域和吸收块之间的多个缓冲块（46）。缓冲块（46）由导电材料制成，例如石墨形式的碳; 氧化锡（和基于该化合物的材料）和/或氧化铟（以及基于该化合物的材料）。由于缓冲材料是导电的而不是绝缘的，所以减少了静电放电损坏的风险。

2. 发明授权

US06208747B1 Determination of scanning error in scanner by reticle rotation 失效
标题翻译：通过光罩旋转确定扫描仪中的扫描误差
公开(公告)号：US06208747B1
公开(公告)日：2001-03-27
申请号：US09203240
申请日：1998-12-01
申请人： Khanh B. Nguyen , Harry Levinson
发明人： Khanh B. Nguyen , Harry Levinson
IPC分类号： G06K900
CPC分类号： G03F7/70616 , G03F7/70358 , G03F7/70625
摘要： A method (300) of characterizing a lithographic scanning system includes the steps of printing a first pattern (302) using a reticle (220) having a first orientation with respect to the lithographic scanning system and measuring a critical dimension of the first pattern at a plurality of points (310). The method (300) further includes printing a second pattern (320) using the reticle (220) having a second orientation with respect to the lithographic scanning system different than the first orientation and measuring a critical dimension of the second pattern at the plurality of points (322). The measured critical dimension data is then used to determine a reticle critical dimension component and a non-reticle critical dimension component of the patterns at the plurality of points (324) and a scanning system critical dimension component of the patterns is then determined using the non-reticle critical dimension component data along a plurality of points corresponding to a scanning direction of the lithographic scanning system (326).
摘要翻译：表征平版印刷扫描系统的方法（300）包括以下步骤：使用相对于光刻扫描系统具有第一取向的掩模版（220）打印第一图案（302），并测量第一图案的临界尺寸多个点（310）。方法（300）还包括使用相对于不同于第一取向的光刻扫描系统具有第二取向的掩模版（220）打印第二图案（320），并且在多个点处测量第二图案的临界尺寸（322）。然后使用测量的临界尺寸数据来确定多个点（324）上的图案的标线片临界尺寸分量和非标线片临界尺寸分量，并且然后使用非 - 沿着与光刻扫描系统（326）的扫描方向相对应的多个点的重复临界尺寸分量数据。

3. 发明授权

US06207966B1 Mark protection with transparent film 有权
标题翻译：标记保护透明膜
公开(公告)号：US06207966B1
公开(公告)日：2001-03-27
申请号：US09205010
申请日：1998-12-04
申请人： Khanh B. Nguyen , Harry Levinson , Richard D. Edwards , Stuart Brown , Paul W. Ackmann
发明人： Khanh B. Nguyen , Harry Levinson , Richard D. Edwards , Stuart Brown , Paul W. Ackmann
IPC分类号： G01B1100
CPC分类号： G03F9/7076 , H01L23/544 , H01L2223/54426 , H01L2223/54453 , H01L2924/0002 , H01L2924/00
摘要： An alignment mark protection structure (95) is disclosed which is used to ensure an integrity of an alignment scheme for a substrate (50) which is to be subjected to lithographic processing. The alignment mark protection structure (95) comprises the substrate (50) and an alignment mark (52) associated with the substrate (50). The alignment mark (52) reflects an alignment light (208) which is then used to determine an optimum alignment between the substrate (50) and a lithographic mask (214). A cap (100) overlies the alignment mark (52) and is substantially transparent with respect to the alignment light (208). The cap (100) protects the underlying alignment mark (52) from lithographic process-induced damage during processing and thus reduces alignment light noise, thereby improving the alignment between a mask (214) and the substrate (50) and minimizing the registration error associated with overlying layers formed on the substrate (50).
摘要翻译：公开了一种对准标记保护结构（95），其用于确保待经受光刻处理的基板（50）的对准方案的完整性。对准标记保护结构（95）包括衬底（50）和与衬底（50）相关联的对准标记（52）。对准标记（52）反射对准光（208），然后将对准光（208）用于确定基板（50）和光刻掩模（214）之间的最佳对准。盖（100）覆盖对准标记（52），并且相对于对准光（208）基本上是透明的。盖（100）在处理期间保护下面的对准标记（52）免受光刻处理引起的损坏，从而减少对准光噪声，从而改善掩模（214）和基板（50）之间的对准并使与之相关联的注册误差最小化其中覆盖层形成在基底（50）上。

4. 发明授权

US6159643A Extreme ultraviolet lithography reflective mask 有权
标题翻译：极紫外光刻反光罩
公开(公告)号：US6159643A
公开(公告)日：2000-12-12
申请号：US258959
申请日：1999-03-01
申请人： Harry Levinson , Khanh B. Nguyen
发明人： Harry Levinson , Khanh B. Nguyen
IPC分类号： G03F1/00 , G03F1/24 , G03F1/60 , G03F9/00
CPC分类号： B82Y40/00 , B82Y10/00 , G03F1/24 , G03F1/60
摘要： A reflective lithography mask (12) includes a pattern-producing portion (200) and a substrate (300) supporting the pattern-producing portion on its top surface. The pattern-producing portion has reflective regions and non-reflective regions corresponding to a desired circuit pattern. The substrate (300) comprises a top layer (306) having a top surface with an optical flatness in the range of at least a quarter-wavelength and a bottom layer (304) having a coefficient of thermal expansion less than about 1.0 ppm/.degree. C. The reflective mask (12) is used in a lithography method to delineate a latent image of a desired circuit pattern (preferably having design rules of 0.18 .mu.m and less) onto a wafer (14) by illuminating the mask (12) with radiation (preferably having a wavelength of 3 nm to 50 nm) so as to reflect radiation from the reflective regions of the mask onto the wafer (14).
摘要翻译：反射光刻掩模（12）包括在其顶表面上支撑图案产生部分的图案产生部分（200）和基底（300）。图案产生部分具有对应于期望的电路图案的反射区域和非反射区域。衬底（300）包括顶层（306），其具有在至少四分之一波长的范围内的光学平坦度的顶表面和具有小于约1.0ppm /℃的热膨胀系数的底层（304）反射掩模（12）以光刻方法用于通过用掩模（12）照射掩模（12）将所需电路图案的潜像（优选具有0.18μm及更小的设计规则）描绘到晶片（14）上。辐射（优选具有3nm至50nm的波长），以便将来自掩模的反射区域的辐射反射到晶片（14）上。

5. 发明授权

US5985498A Method of characterizing linewidth errors in a scanning lithography system 失效
标题翻译：在扫描光刻系统中表征线宽误差的方法
公开(公告)号：US5985498A
公开(公告)日：1999-11-16
申请号：US259928
申请日：1999-03-01
申请人： Harry Levinson , Khanh B. Nguyen , Anna M. Minvielle
发明人： Harry Levinson , Khanh B. Nguyen , Anna M. Minvielle
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F7/2045
摘要： A method of characterizing linewidth errors in a lithography system 30 used to delineate a desired pattern onto an exposure site of a wafer 32. The pattern of a reticle 34 is transferred onto an exposure site 56 of a wafer 32 by projecting a slit of light extending in a slit direction y through the reticle while scanning the reticle and the wafer in a scanning direction x relative to the lens. The exposure site 56 is conceptually divided into a grid having one series of lines extending in the scan direction x and another series of lines extending in the slit direction y whereby points corresponding to perpendicular intersections of the lines may each be assigned a pair of coordinates (x,y). The linewidths of the pattern are measured for each of the points (x,y) and a linewidth error value ERROR (x,y) is generated for each of the points (x,y). An ERROR.sub.optical (y) value for each y coordinate is calculated by averaging the ERROR (x,y) values for each group of points (x,y) having a common y coordinate. In this manner, the contribution of optical aberrations to linewidth errors may be determined.
摘要翻译：用于表征光刻系统30中的线宽误差的方法，用于将期望的图案划定到晶片32的曝光位置。标线片34的图案通过突出延伸的光的狭缝转移到晶片32的曝光位置56上在相对于透镜的扫描方向x扫描掩模版和晶片的同时沿切割方向y穿过掩模版。曝光位置56在概念上被划分为具有在扫描方向x上延伸的一系列线的栅格和沿狭缝方向y延伸的另一系列线，由此可以将对应于线的垂直交点的点分配一对坐标（ x，y）。对于每个点（x，y）测量图案的线宽，并且为每个点（x，y）生成线宽误差值ERROR（x，y）。通过对具有公共y坐标的每组点（x，y）的ERROR（x，y）值进行平均来计算每个y坐标的ERRORoptical（y）值。以这种方式，可以确定光学像差对线宽误差的贡献。

6. 发明授权

US06399401B1 Test structures for electrical linewidth measurement and processes for their formation 失效
标题翻译：电线宽测量的测试结构及其形成过程
公开(公告)号：US06399401B1
公开(公告)日：2002-06-04
申请号：US09912186
申请日：2001-07-24
申请人： Jongwook Kye , Harry Levinson
发明人： Jongwook Kye , Harry Levinson
IPC分类号： G01R3126
CPC分类号： H01L22/34 , H01L2924/0002 , Y10S977/88 , Y10S977/887 , H01L2924/00
摘要： In a method of determining a linewidth of a polysilicon line formed by a lithographic process, a polysilicon layer is formed on a substrate. A line is patterned from said polysilicon layer using said lithographic process and a Van der Pauw structure is patterned from said polysilicon layer. N2 is then implanted into the polysilicon line and the polysilicon Van der Pauw structure to form a depletion barrier. A P-type dopant is the implanted into the polysilicon line and the polysilicon Van der Pauw structure and the dopant is activated. A sheet resistivity of the Van der Pauw structure is determined, and the linewidth of the polysilicon line is then determined by electrical linewidth measurement using the sheet resistivity of the Van der Pauw structure as the sheet resistivity of the polysilicon line. A related test structure is also disclosed.
摘要翻译：在确定通过光刻工艺形成的多晶硅线的线宽的方法中，在衬底上形成多晶硅层。使用所述光刻工艺从所述多晶硅层图案化线，并且从所述多晶硅层构图范德波瓦结构。然后将N 2注入到多晶硅线和多晶硅Van der Pauw结构中以形成耗尽势垒。 P型掺杂剂被注入到多晶硅线中，并且多晶硅Van der Pauw结构和掺杂剂被激活。确定Van der Pauw结构的薄层电阻率，然后通过使用Van der Pauw结构的薄层电阻率作为多晶硅线的薄层电阻率的电线宽测量来确定多晶硅线的线宽。还公开了相关的测试结构。

7. 发明授权

US08741763B2 Layout designs with via routing structures 有权
标题翻译：布局设计通过路由结构
公开(公告)号：US08741763B2
公开(公告)日：2014-06-03
申请号：US13465129
申请日：2012-05-07
申请人： Yuansheng Ma , Jongwook Kye , Harry Levinson , Hidekazu Yoshida , Mahbub Rashed
发明人： Yuansheng Ma , Jongwook Kye , Harry Levinson , Hidekazu Yoshida , Mahbub Rashed
IPC分类号： H01L21/44 , H01L23/528
CPC分类号： H01L21/76895 , H01L23/528 , H01L27/0207 , H01L27/11807 , H01L2027/11875 , H01L2924/0002 , H01L2924/00
摘要： An approach for providing layout designs with via routing structures is disclosed. Embodiments include: providing a gate structure and a diffusion contact on a substrate; providing a gate contact on the gate structure; providing a metal routing structure that does not overlie a portion of the gate contact, the diffusion contact, or a combination thereof; and providing a via routing structure over the portion and under a part of the metal routing structure to couple the gate contact, the diffusion contact, or a combination thereof to the metal routing structure.
摘要翻译：公开了一种通过路由结构提供布局设计的方法。实施例包括：在衬底上提供栅极结构和扩散接触; 在栅极结构上提供栅极接触; 提供不覆盖栅极接触部分，扩散接触部分或其组合的金属布线结构; 以及在金属布线结构的部分和一部分之下提供通孔布线结构以将栅极接触，扩散接触或其组合耦合到金属布线结构。

8. 发明授权

US07199994B1 Method and system for flattening a reticle within a lithography system 有权
标题翻译：光刻系统中的光罩平坦化的方法和系统
公开(公告)号：US07199994B1
公开(公告)日：2007-04-03
申请号：US10755731
申请日：2004-01-12
申请人： Harry Levinson , Thomas White
发明人： Harry Levinson , Thomas White
IPC分类号： H01T23/00
CPC分类号： G03F7/70783 , G03F7/70708
摘要： For clamping a reticle within a lithography system, a first area in the center of the reticle is clamped to a chuck of the lithography system at a first time point. In addition, a second area toward an outer perimeter of the reticle is clamped to the chuck at a second time point after the first time point such that the reticle is flattened against the chuck. With such flattening of the reticle, image placement error on a semiconductor substrate is minimized.
摘要翻译：为了在光刻系统内夹紧掩模版，在第一时间点将掩模版中心的第一区域夹紧到光刻系统的卡盘。此外，在第一时间点之后的第二时间点，朝向光罩的外周的第二区域被夹持到卡盘，使得光罩平坦地卡在卡盘上。通过掩模版的这种平坦化，半导体衬底上的图像放置误差被最小化。

9. 发明申请

US20050048223A1 Method and apparatus for elimination of bubbles in immersion medium in immersion lithography systems 有权
标题翻译：浸没式光刻系统中浸没介质中气泡消除的方法和装置
公开(公告)号：US20050048223A1
公开(公告)日：2005-03-03
申请号：US10653844
申请日：2003-09-02
申请人： Adam Pawloski , Amr Abdo , Gilles Amblard , Bruno LaFontaine , Ivan Lalovic , Harry Levinson , Jeffrey Schefske , Cyrus Tabery , Frank Tsai
发明人： Adam Pawloski , Amr Abdo , Gilles Amblard , Bruno LaFontaine , Ivan Lalovic , Harry Levinson , Jeffrey Schefske , Cyrus Tabery , Frank Tsai
IPC分类号： G03F7/20 , B05D3/00
CPC分类号： G03F7/70341
摘要： A method of operating an immersion lithography system, including steps of immersing at least a portion of a wafer to be exposed in an immersion medium, wherein the immersion medium comprises at least one bubble; directing an ultrasonic wave through at least a portion of the immersion medium to disrupt and/or dissipate the at least one bubble; and exposing the wafer with an exposure pattern by passing electromagnetic radiation through the immersion medium subsequent to the directing. Also disclosed is a monitoring and control system for an immersion lithography system.
摘要翻译：一种操作浸没式光刻系统的方法，包括将要曝光的晶片的至少一部分浸入浸没介质中的步骤，其中浸没介质包括至少一个气泡; 引导超声波穿过所述浸没介质的至少一部分以破坏和/或消散所述至少一个气泡; 以及在引导之后通过使电磁辐射穿过浸渍介质，以曝光图案曝光晶片。还公开了一种用于浸没式光刻系统的监视和控制系统。

10. 发明申请

US20050037269A1 Method and apparatus for monitoring and controlling imaging in immersion lithography systems 有权
标题翻译：浸没光刻系统中成像监测和控制的方法和装置
公开(公告)号：US20050037269A1
公开(公告)日：2005-02-17
申请号：US10638927
申请日：2003-08-11
申请人： Harry Levinson
发明人： Harry Levinson
IPC分类号： G03F7/20 , G01R31/26 , G01N21/55 , G03C5/00
CPC分类号： G03F7/70341
摘要： A method of monitoring an immersion lithography system in which a wafer can be immersed in a liquid immersion medium for exposure by an exposure pattern. The method detects the presence of a foreign body in the immersion medium to thereby determine if the immersion medium in a state that is acceptable for exposing the wafer with the exposure pattern. Also disclosed is a monitoring and control system for an immersion lithography system.
摘要翻译：一种监测浸没式光刻系统的方法，其中晶片可以浸在用于通过曝光图案曝光的浸液介质中。该方法检测浸没介质中异物的存在，从而确定浸没介质是否以可曝光晶片曝光的状态。还公开了一种用于浸没式光刻系统的监视和控制系统。

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