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    • 3. 发明授权
    • Phase grating focus monitor using overlay technique
    • 相位光栅聚焦监测器使用覆盖技术
    • US06710853B1
    • 2004-03-23
    • US09944795
    • 2001-08-31
    • Bruno La FontaineJongwook KyeHarry Levinson
    • Bruno La FontaineJongwook KyeHarry Levinson
    • G03B2752
    • G03F7/70633G03F7/70641
    • An optical tool includes a tool body that is transparent to light. Pluralities of parallel opaque lines on the body form a first outline in the shape of the square, and a second outline in the shape of a square which is centrally located relative to and within the first-mentioned square. Each pair of adjacent parallel lines has therebetween a first region that allows transmission of light therethrough without changing phase thereof, and a second region alongside the first region that allows transmission of light therethrough while shifting the phase thereof by 90°. The phase shifting and non-phase shifting regions are positioned so that the images of the outlines provided by a lens on an object shit in position a substantial amount as the distance between the lens and the object is changed.
    • 光学工具包括对光透明的工具主体。 身体上多条平行的不透明线条形成了正方形形状的第一轮廓,并且以相对于第一个提及的正方形中心定位的正方形形状的第二轮廓。 每对相邻的平行线之间具有允许透过其而不改变其相位的第一区域,以及沿着第一区域的第二区域,其允许透过光而使其相位偏移90°。 定位相移和非相移区域,使得当物体上的透镜提供的轮廓的图像在透镜和物体之间的距离改变时大量地位置处于位置。
    • 5. 发明授权
    • Mark protection with transparent film
    • 标记保护透明膜
    • US06207966B1
    • 2001-03-27
    • US09205010
    • 1998-12-04
    • Khanh B. NguyenHarry LevinsonRichard D. EdwardsStuart BrownPaul W. Ackmann
    • Khanh B. NguyenHarry LevinsonRichard D. EdwardsStuart BrownPaul W. Ackmann
    • G01B1100
    • G03F9/7076H01L23/544H01L2223/54426H01L2223/54453H01L2924/0002H01L2924/00
    • An alignment mark protection structure (95) is disclosed which is used to ensure an integrity of an alignment scheme for a substrate (50) which is to be subjected to lithographic processing. The alignment mark protection structure (95) comprises the substrate (50) and an alignment mark (52) associated with the substrate (50). The alignment mark (52) reflects an alignment light (208) which is then used to determine an optimum alignment between the substrate (50) and a lithographic mask (214). A cap (100) overlies the alignment mark (52) and is substantially transparent with respect to the alignment light (208). The cap (100) protects the underlying alignment mark (52) from lithographic process-induced damage during processing and thus reduces alignment light noise, thereby improving the alignment between a mask (214) and the substrate (50) and minimizing the registration error associated with overlying layers formed on the substrate (50).
    • 公开了一种对准标记保护结构(95),其用于确保待经受光刻处理的基板(50)的对准方案的完整性。 对准标记保护结构(95)包括衬底(50)和与衬底(50)相关联的对准标记(52)。 对准标记(52)反射对准光(208),然后将对准光(208)用于确定基板(50)和光刻掩模(214)之间的最佳对准。 盖(100)覆盖对准标记(52),并且相对于对准光(208)基本上是透明的。 盖(100)在处理期间保护下面的对准标记(52)免受光刻处理引起的损坏,从而减少对准光噪声,从而改善掩模(214)和基板(50)之间的对准并使与之相关联的注册误差最小化 其中覆盖层形成在基底(50)上。
    • 8. 发明授权
    • Phase-shift-moiré focus monitor
    • 相移莫尔焦点监视器
    • US06535280B1
    • 2003-03-18
    • US09944794
    • 2001-08-31
    • Bruno La FontaineJongwook KyeHarry Levinson
    • Bruno La FontaineJongwook KyeHarry Levinson
    • G01J100
    • G03F9/7026G03F9/7049
    • An optical monitor includes a body having a first plurality of parallel, substantially opaque, spaced apart lines thereon, and the second plurality of parallel, substantially opaque, spaced apart lines thereon, with a relatively small angle between the first and second pluralities of lines. A an image of the lines of the first plurality thereof is provided on the semiconductor body, upon relative movement of the monitor toward and away from the semiconductor body, the line images move relative to the semiconductor body. The images of the lines of the second plurality thereof provided on the semiconductor body move in a different manner upon relative movement if the monitor toward and away from the semiconductor body: The moiré fringe formed on the semiconductor body from images of the first and second plurality of lines during such movement is analyzed in order to achieve proper focus of the image on the semiconductor body.
    • 光学监视器包括主体,其上具有第一多个平行的,基本上不透明的间隔开的线,以及其上的第二多个平行,基本上不透明的间隔开的线,在第一和第二多条线之间具有相对小的角度。 当半导体本体上的第一多个的线的图像被设置在半导体本体上时,当监视器朝向和远离半导体主体相对运动时,线图像相对于半导体本体移动。 如果监视器朝向和离开半导体主体,则设置在半导体主体上的第二多个的线的图像在相对移动时以不同的方式移动。从第一和第二多个图像的图像形成在半导体主体上的莫尔条纹 分析这种移动期间的线,以便在半导体本体上实现图像的适当聚焦。
    • 10. 发明授权
    • Extreme ultraviolet lithography reflective mask
    • 极紫外光刻反光罩
    • US6159643A
    • 2000-12-12
    • US258959
    • 1999-03-01
    • Harry LevinsonKhanh B. Nguyen
    • Harry LevinsonKhanh B. Nguyen
    • G03F1/00G03F1/24G03F1/60G03F9/00
    • B82Y40/00B82Y10/00G03F1/24G03F1/60
    • A reflective lithography mask (12) includes a pattern-producing portion (200) and a substrate (300) supporting the pattern-producing portion on its top surface. The pattern-producing portion has reflective regions and non-reflective regions corresponding to a desired circuit pattern. The substrate (300) comprises a top layer (306) having a top surface with an optical flatness in the range of at least a quarter-wavelength and a bottom layer (304) having a coefficient of thermal expansion less than about 1.0 ppm/.degree. C. The reflective mask (12) is used in a lithography method to delineate a latent image of a desired circuit pattern (preferably having design rules of 0.18 .mu.m and less) onto a wafer (14) by illuminating the mask (12) with radiation (preferably having a wavelength of 3 nm to 50 nm) so as to reflect radiation from the reflective regions of the mask onto the wafer (14).
    • 反射光刻掩模(12)包括在其顶表面上支撑图案产生部分的图案产生部分(200)和基底(300)。 图案产生部分具有对应于期望的电路图案的反射区域和非反射区域。 衬底(300)包括顶层(306),其具有在至少四分之一波长的范围内的光学平坦度的顶表面和具有小于约1.0ppm /℃的热膨胀系数的底层(304) 反射掩模(12)以光刻方法用于通过用掩模(12)照射掩模(12)将所需电路图案的潜像(优选具有0.18μm及更小的设计规则)描绘到晶片(14)上。 辐射(优选具有3nm至50nm的波长),以便将来自掩模的反射区域的辐射反射到晶片(14)上。