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1. 发明授权

US08802574B2 Methods of making jogged layout routings double patterning compliant 有权
标题翻译：制作慢跑布局布线的方法双重图案化
公开(公告)号：US08802574B2
公开(公告)日：2014-08-12
申请号：US13418895
申请日：2012-03-13
申请人： Lei Yuan , Jongwook Kye
发明人： Lei Yuan , Jongwook Kye
IPC分类号： H01L21/302
CPC分类号： H01L21/0274 , G03F1/70
摘要： One illustrative method disclosed herein involves creating an overall target pattern that includes an odd-jogged feature with a crossover region that connects first and second line portions, wherein the crossover region has a first dimension in a first direction that is greater than a second dimension that is transverse to the first direction, decomposing the overall target pattern into a first sub-target pattern and a second sub-target pattern, wherein each of the sub-target patterns comprise a line portion and a first portion of the crossover region, and generating first and second sets of mask data corresponding to the first and second sub-target patterns, respectively.
摘要翻译：本文公开的一种说明性方法包括创建包括具有连接第一和第二线部分的交叉区域的奇点运动特征的整体目标图案，其中，交叉区域具有大于第二尺寸的第一方向上的第一尺寸，横向于第一方向，将总体目标图案分解为第一子目标图案和第二子目标图案，其中每个子目标图案包括线路部分和交叉区域的第一部分，并且产生分别对应于第一和第二子目标图案的第一和第二组掩模数据。

2. 发明授权

US08361335B2 Methods for fabricating semiconductor devices 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08361335B2
公开(公告)日：2013-01-29
申请号：US12480232
申请日：2009-06-08
申请人： Yunfei Deng , Jongwook Kye
发明人： Yunfei Deng , Jongwook Kye
IPC分类号： B44C1/22 , H01L21/302
CPC分类号： G03F1/00 , G03B27/42 , G03F7/2024 , H01L21/0273
摘要： Methods are provided for fabricating a semiconductor device. One method comprises providing a first pattern having a first polygon, the first polygon having a first tonality and having a first side and a second side, the first side adjacent to a second polygon having a second tonality, and the second side adjacent to a third polygon having the second tonality, and forming a second pattern by reversing the tonality of the first pattern. The method further comprises forming a third pattern from the second pattern by converting the second polygon from the first tonality to the second tonality forming a fourth pattern from the second pattern by converting the third polygon from the first tonality to the second tonality forming a fifth pattern by reversing the tonality of the third pattern, and forming a sixth pattern by reversing the tonality of the fourth pattern.
摘要翻译：提供了制造半导体器件的方法。一种方法包括提供具有第一多边形的第一图案，所述第一多边形具有第一音调并且具有第一侧和第二侧，所述第一侧邻近于具有第二音调的第二多边形，并且所述第二侧相邻于第三多边形具有第二色调的多边形，并且通过反转第一图案的色调来形成第二图案。该方法还包括通过从第二图案将第二多边形从第一图案转换成第二色调而将第二多边形从第一色调转换成第二色调以从第二图案转换成第二色调，从第二图案形成第三图案，通过颠倒第三图案的音调，并通过反转第四图案的音调形成第六图案。

3. 发明授权

US08153351B2 Methods for performing photolithography using BARCs having graded optical properties 有权
标题翻译：使用具有渐变光学特性的BARC进行光刻的方法
公开(公告)号：US08153351B2
公开(公告)日：2012-04-10
申请号：US12255514
申请日：2008-10-21
申请人： Thomas I. Wallow , Jongwook Kye
发明人： Thomas I. Wallow , Jongwook Kye
IPC分类号： G03F7/09 , G03F7/11
CPC分类号： G03F7/091
摘要： Photolithography methods using BARCs having graded optical properties are provided. In an exemplary embodiment, a photolithography method comprises the steps of depositing a BARC overlying a material to be patterned, the BARC having a refractive index and an absorbance. The BARC is modified such that, after the step of modifying, values of the refractive index and the absorbance are graded from first values at a first surface of the BARC to second values at a second surface of the BARC. The step of modifying is performed after the step of depositing.
摘要翻译：提供了使用具有渐变光学特性的BARC的光刻方法。在示例性实施例中，光刻方法包括沉积覆盖待图案化材料的BARC，BARC具有折射率和吸光度的步骤。修改BARC使得在修改步骤之后，折射率和吸光度的值从BARC的第一表面处的第一值到BARC的第二表面处的第二值分级。在存放步骤之后执行修改步骤。

4. 发明申请

US20090040483A1 MULTIPLE EXPOSURE TECHNIQUE USING OPC TO CORRECT DISTORTION 有权
标题翻译：使用OPC纠正错误的多次曝光技术
公开(公告)号：US20090040483A1
公开(公告)日：2009-02-12
申请号：US11834979
申请日：2007-08-07
申请人： Yunfei Deng , Jongwook Kye , Ryoung-han Kim
发明人： Yunfei Deng , Jongwook Kye , Ryoung-han Kim
IPC分类号： G03B27/42 , G03B27/68
CPC分类号： G03B27/42
摘要： Accurate ultrafine patterns are formed using a multiple exposure technique comprising implementing an OPC procedure to form an exposure reticle to compensate for distortion of an overlying resist pattern caused by an underlying resist pattern. Embodiments include forming a first resist pattern in a first resist layer over a target layer using a first exposure reticle, forming a second exposure reticle by an OPC technique to compensate for distortion of a second resist pattern caused by the underlying first resist pattern, depositing a second resist layer on the first resist pattern, forming the second resist pattern in the second resist layer using the second exposure reticle, the first and second resist patterns constituting a final resist mask, and forming a pattern in the target layer using the final resist mask.
摘要翻译：使用多重曝光技术形成精确的超细纹图案，该技术包括实施OPC程序以形成曝光掩模版，以补偿由下面的抗蚀剂图案引起的上覆抗蚀剂图案的变形。实施例包括使用第一曝光掩模在目标层上在第一抗蚀剂层中形成第一抗蚀剂图案，通过OPC技术形成第二曝光掩模版，以补偿由下面的第一抗蚀剂图案引起的第二抗蚀剂图案的变形，在第一抗蚀剂图案上的第二抗蚀剂层，使用第二曝光掩模在第二抗蚀剂层中形成第二抗蚀剂图案，第一和第二抗蚀剂图案构成最终抗蚀剂掩模，并且使用最终抗蚀剂掩模在目标层中形成图案。

5. 发明申请

US20080171446A1 METHOD OF FORMING SEMICONDUCTOR DEVICE 有权
标题翻译：形成半导体器件的方法
公开(公告)号：US20080171446A1
公开(公告)日：2008-07-17
申请号：US11623031
申请日：2007-01-12
申请人： Ryoung-han Kim , Thomas Ingolf Wallow , Harry Jay Levinson , Jongwook Kye , Alden R. Acheta
发明人： Ryoung-han Kim , Thomas Ingolf Wallow , Harry Jay Levinson , Jongwook Kye , Alden R. Acheta
IPC分类号： H01L21/31
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/0338
摘要： A method for forming a semiconductor device is provided including processing a wafer having a target material; forming a first pattern over the target material; forming a protection layer over the first pattern; and forming a second pattern, over the target material and not over the protection layer, without an etching step between the forming the first pattern and the forming the second pattern.
摘要翻译：提供一种形成半导体器件的方法，包括处理具有目标材料的晶片; 在目标材料上形成第一图案; 在所述第一图案上形成保护层; 并且在形成第一图案和形成第二图案之间没有蚀刻步骤的情况下，在目标材料上形成第二图案而不是在保护层上方。

6. 发明授权

US06906777B1 Pellicle for a lithographic lens 有权
标题翻译：光刻胶片的薄膜
公开(公告)号：US06906777B1
公开(公告)日：2005-06-14
申请号：US10790412
申请日：2004-03-01
申请人： Jongwook Kye , Carl P. Babcock , Christopher F. Lyons
发明人： Jongwook Kye , Carl P. Babcock , Christopher F. Lyons
IPC分类号： G03F7/20 , G03B27/32 , G03B27/52 , G03B27/54
CPC分类号： G03F7/70983 , G03F7/70833 , G03F7/70916
摘要： A method and apparatus for preventing contamination in a lithographic apparatus including a projection system, including providing the lithographic apparatus including the projection system for imaging an irradiated portion of a mask onto a target portion of a substrate and placing a pellicle over a surface of the projection system to inhibit contamination of the surface.
摘要翻译：一种用于防止在包括投影系统的光刻设备中的污染的方法和设备，包括提供包括投影系统的光刻设备，用于将掩模的照射部分成像到基板的目标部分上，并将防护薄膜组件放置在突出部分的表面上系统抑制表面的污染。

7. 发明申请

US20050122497A1 Immersion lithographic process using a conforming immersion medium 失效
标题翻译：浸渍光刻工艺使用一致的浸渍介质
公开(公告)号：US20050122497A1
公开(公告)日：2005-06-09
申请号：US10726413
申请日：2003-12-03
申请人： Christopher Lyons , Carl Babcock , Jongwook Kye
发明人： Christopher Lyons , Carl Babcock , Jongwook Kye
IPC分类号： G03F7/20 , G03B27/42
CPC分类号： G03F7/70341
摘要： A method of making a device using a lithographic system having a lens from which an exposure pattern is emitted. A conforming immersion medium can be positioned between a photo resist layer and the lens. The photo resist layer, which can be disposed over a wafer, and the lens can be brought into intimate contact with the conforming immersion medium. The photo resist can then be exposed with the exposure pattern so that the exposure pattern traverses the conforming immersion medium.
摘要翻译：一种制造使用具有透镜的光刻系统的装置的方法，曝光图案从该透镜发射。适配浸没介质可以位于光致抗蚀剂层和透镜之间。可以设置在晶片上的光致抗蚀剂层，并且透镜可以与合适的浸渍介质紧密接触。然后可以用曝光图案曝光光致抗蚀剂，使得曝光图案穿过合适的浸渍介质。

8. 发明授权

US06556286B1 Inspection system for the pupil of a lithographic tool 有权
标题翻译：光刻工具瞳孔检查系统
公开(公告)号：US06556286B1
公开(公告)日：2003-04-29
申请号：US09845789
申请日：2001-04-30
申请人： Bruno M. La Fontaine , Harry J. Levinson , Jongwook Kye
发明人： Bruno M. La Fontaine , Harry J. Levinson , Jongwook Kye
IPC分类号： G01B900
CPC分类号： G03F7/706
摘要： An inspection tool or inspection system can be utilized to determine whether the appropriate pattern is on a reticle. The reticle can be associated with EUV lithographic tools. The system utilizes an at least two wavelengths of light. The light is directed to the reticle at the at least two wavelengths of light.
摘要翻译：可以使用检查工具或检查系统来确定适当的图案是否在掩模版上。掩模版可以与EUV光刻工具相关联。该系统利用至少两个波长的光。光在至少两个波长的光下被引导到光罩。

9. 发明授权

US06399401B1 Test structures for electrical linewidth measurement and processes for their formation 失效
标题翻译：电线宽测量的测试结构及其形成过程
公开(公告)号：US06399401B1
公开(公告)日：2002-06-04
申请号：US09912186
申请日：2001-07-24
申请人： Jongwook Kye , Harry Levinson
发明人： Jongwook Kye , Harry Levinson
IPC分类号： G01R3126
CPC分类号： H01L22/34 , H01L2924/0002 , Y10S977/88 , Y10S977/887 , H01L2924/00
摘要： In a method of determining a linewidth of a polysilicon line formed by a lithographic process, a polysilicon layer is formed on a substrate. A line is patterned from said polysilicon layer using said lithographic process and a Van der Pauw structure is patterned from said polysilicon layer. N2 is then implanted into the polysilicon line and the polysilicon Van der Pauw structure to form a depletion barrier. A P-type dopant is the implanted into the polysilicon line and the polysilicon Van der Pauw structure and the dopant is activated. A sheet resistivity of the Van der Pauw structure is determined, and the linewidth of the polysilicon line is then determined by electrical linewidth measurement using the sheet resistivity of the Van der Pauw structure as the sheet resistivity of the polysilicon line. A related test structure is also disclosed.
摘要翻译：在确定通过光刻工艺形成的多晶硅线的线宽的方法中，在衬底上形成多晶硅层。使用所述光刻工艺从所述多晶硅层图案化线，并且从所述多晶硅层构图范德波瓦结构。然后将N 2注入到多晶硅线和多晶硅Van der Pauw结构中以形成耗尽势垒。 P型掺杂剂被注入到多晶硅线中，并且多晶硅Van der Pauw结构和掺杂剂被激活。确定Van der Pauw结构的薄层电阻率，然后通过使用Van der Pauw结构的薄层电阻率作为多晶硅线的薄层电阻率的电线宽测量来确定多晶硅线的线宽。还公开了相关的测试结构。

10. 发明授权

US08889561B2 Double sidewall image transfer process 有权
标题翻译：双侧壁图像传输过程
公开(公告)号：US08889561B2
公开(公告)日：2014-11-18
申请号：US13709541
申请日：2012-12-10
申请人： Youngtag Woo , Jongwook Kye , Dinesh Somasekhar
发明人： Youngtag Woo , Jongwook Kye , Dinesh Somasekhar
IPC分类号： H01L21/308 , H01L21/8238 , H01L27/11 , H01L27/088
CPC分类号： H01L27/1108 , H01L21/3086 , H01L21/3088 , H01L21/823431 , H01L21/823821 , H01L27/0886 , H01L27/11
摘要： Methodology enabling a generation of fins having a variable fin pitch less than 40 nm, and the resulting device are disclosed. Embodiments include: forming a hardmask on a substrate; providing first and second mandrels on the hardmask; providing a first spacer on each side of each of the first and second mandrels; removing the first and second mandrels; providing, after removal of the first and second mandrels, a second spacer on each side of each of the first spacers; and removing the first spacers.
摘要翻译：公开了能够产生具有可变翅片间距小于40nm的翅片的方法，并且所得到的装置被公开。实施例包括：在基板上形成硬掩模; 在硬掩模上提供第一和第二心轴; 在每个第一和第二心轴的每一侧上提供第一间隔件; 去除第一和第二心轴; 在移除所述第一和第二心轴之后，在每个所述第一间隔件的每一侧上提供第二间隔件; 并移除第一间隔物。

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