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    • 2. 发明授权
    • Cathode including a solid body
    • 阴极包括一个坚实的身体
    • US5592043A
    • 1997-01-07
    • US625689
    • 1996-04-03
    • Georg GartnerHans Lydtin
    • Georg GartnerHans Lydtin
    • H01J1/14H01J1/15H01J1/28
    • H01J1/14H01J1/28
    • Cathode including a solid body (4) which comprises metallic constituents (particularly W, Ni, Mg, Re, Mo, Pt) and oxidic constituents (such as particularly BaO, CaO, Al.sub.2 O.sub.3, Sc.sub.2 O.sub.3, SrO, ThO.sub.2, La.sub.2 O.sub.3).Also at low operating temperatures, high emission current densities and a long lifetime are achieved in that the structure of the constituents and the volume ratio v.sub.m of the metallic constituents relative to the overall volume of the solid body are chosen to be such that the resistivity .rho. has a value in the range of .rho..sub.0 .multidot.10.sup.-4 >.rho.>.rho..sub.m .multidot.10.sup.2, in which .rho..sub.0 and .rho..sub.m are the resistivities, defined at 20.degree. C., of the pure oxidic constituents and the pure metallic constituents, respectively.
    • 阴极包括包含金属成分(特别是W,Ni,Mg,Re,Mo,Pt)和氧化成分(特别是BaO,CaO,Al 2 O 3,Sc 2 O 3,SrO,ThO 2,La 2 O 3)的固体(4)。 同样在低工作温度下,实现了高发射电流密度和长寿命,其中组分的结构和金属组分相对于固体的总体积的体积比vm被选择为使电阻率rho 其中rho 0和rho m分别为纯氧化成分和纯金属成分在20℃下的电阻率。
    • 4. 发明授权
    • Method of manufacturing polycrystalline diamond layers
    • 多晶金刚石层的制造方法
    • US5200231A
    • 1993-04-06
    • US820029
    • 1992-01-10
    • Peter K. BachmannHans LydtinArnd Ritz
    • Peter K. BachmannHans LydtinArnd Ritz
    • C23C16/27
    • C23C16/27C23C16/279Y10T428/30
    • Method of manufacturing polycrystalline diamond layers, in which diamond crystallites are deposited by means of Chemical Vapour Deposition (CVD) on a substrate heated to a temperature ranging between 450.degree. and 1200.degree. C. from a gas phase comprising hydrogen and .ltoreq.30% of a carbon-containing gas at a pressure ranging between 10.sup.-5 and 1 bar, in which method the substrate is contacted with a gas phase having an energy content which varies in time, such that at least at the start of the deposition process the substrate is in contact with a gas phase having an energy content which is suitable for nucleating diamond crystallites in the gas phase, whereafter the substrate is contacted with a gas phase having an energy content which is increased with respect to the content at the start of the process and further diamond crystallites are formed in situ on the substrate surface nucleated with diamond crystallites formed in the gas phase.
    • 制造多晶金刚石层的方法,其中金刚石微晶通过化学气相沉积(CVD)沉积在加热到在450℃和1200℃之间的温度范围内的基底上,所述气相包含氢气和/或30% 的压力范围在10-5和1巴之间的含碳气体,其中基板与具有随时间变化的能量含量的气相接触,使得至少在沉积过程开始时 衬底与气相接触,该气相具有适于在气相中成核金刚石微晶的能量含量,之后衬底与能量含量相对于在开始时的含量增加的气相接触 工艺和进一步的金刚石微晶在基体表面上原位形成,其中金刚石微晶在气相中形成。