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1. 发明申请

US20120208374A1 AMORPHOUS CARBON DEPOSITION METHOD FOR IMPROVED STACK DEFECTIVITY 有权
标题翻译：用于改善堆积缺陷的非晶碳沉积方法
公开(公告)号：US20120208374A1
公开(公告)日：2012-08-16
申请号：US13455916
申请日：2012-04-25
申请人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
发明人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
IPC分类号： H01L21/312
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/02304 , H01L21/0332 , H01L21/0337 , H01L21/0338
摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.
摘要翻译：本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。在一个实施方案中，提供了形成复合无定形碳层的方法。该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体，在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下，并且在所述无定形碳起始层上形成块状无定形碳层，其中，用于形成大块无定形碳层的烃源气体的体积流量为稀释剂源气体流速为1：6或更大。

2. 发明申请

US20120015521A1 AMORPHOUS CARBON DEPOSITION METHOD FOR IMPROVED STACK DEFECTIVITY 有权
标题翻译：用于改善堆积缺陷的非晶碳沉积方法
公开(公告)号：US20120015521A1
公开(公告)日：2012-01-19
申请号：US13093679
申请日：2011-04-25
申请人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
发明人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
IPC分类号： H01L21/308 , H01L21/32
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/02304 , H01L21/0332 , H01L21/0337 , H01L21/0338
摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.
摘要翻译：本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体，在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体碳层。

3. 发明授权

US08349741B2 Amorphous carbon deposition method for improved stack defectivity 有权
标题翻译：无定形碳沉积方法，提高了堆叠缺陷率
公开(公告)号：US08349741B2
公开(公告)日：2013-01-08
申请号：US13455916
申请日：2012-04-25
申请人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
发明人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
IPC分类号： H01L21/308 , H01L21/32
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/02304 , H01L21/0332 , H01L21/0337 , H01L21/0338
摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less, and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater.
摘要翻译：本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。在一个实施方案中，提供了形成复合无定形碳层的方法。该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体，在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下，并且在所述无定形碳起始层上形成块状无定形碳层，其中，用于形成大块无定形碳层的烃源气体的体积流量为稀释剂源气体流速为1：6或更大。

4. 发明授权

US08227352B2 Amorphous carbon deposition method for improved stack defectivity 有权
标题翻译：无定形碳沉积方法，提高了堆叠缺陷率
公开(公告)号：US08227352B2
公开(公告)日：2012-07-24
申请号：US13093679
申请日：2011-04-25
申请人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
发明人： Hang Yu , Deenesh Padhi , Man-Ping Cai , Naomi Yoshida , Li Yan Miao , Siu F. Cheng , Shahid Shaikh , Sohyun Park , Heung Lak Park , Bok Hoen Kim
IPC分类号： H01L21/308 , H01L21/32
CPC分类号： H01L21/02115 , C23C16/26 , H01L21/02274 , H01L21/02304 , H01L21/0332 , H01L21/0337 , H01L21/0338
摘要： Embodiments described herein relate to materials and processes for patterning and etching features in a semiconductor substrate. In one embodiment, a method of forming a composite amorphous carbon layer for improved stack defectivity on a substrate is provided. The method comprises positioning a substrate in a process chamber, introducing a hydrocarbon source gas into the process chamber, introducing a diluent source gas into the process chamber, introducing a plasma-initiating gas into the process chamber, generating a plasma in the process chamber, forming an amorphous carbon initiation layer on the substrate, wherein the hydrocarbon source gas has a volumetric flow rate to diluent source gas flow rate ratio of 1:12 or less; and forming a bulk amorphous carbon layer on the amorphous carbon initiation layer, wherein a hydrocarbon source gas used to form the bulk amorphous carbon layer has a volumetric flow rate to a diluent source gas flow rate of 1:6 or greater to form the composite amorphous carbon layer.
摘要翻译：本文描述的实施例涉及用于图案化和蚀刻半导体衬底中的特征的材料和工艺。在一个实施例中，提供了形成用于提高衬底缺陷率的复合非晶碳层的方法。该方法包括将基板定位在处理室中，将烃源气体引入处理室中，将稀释源气体引入处理室，将等离子体起始气体引入处理室，在处理室中产生等离子体，在所述基板上形成无定形碳起始层，其中所述烃源气体的体积流量与稀释剂源气体流量比为1:12以下; 以及在所述无定形碳起始层上形成块状无定形碳层，其中用于形成所述块状无定形碳层的烃源气体具有以1:6或更大的稀释剂源气体流量的体积流量，以形成所述复合非晶体碳层。

5. 发明授权

US09018054B2 Metal gate structures for field effect transistors and method of fabrication 有权
标题翻译：用于场效应晶体管的金属栅极结构及其制造方法
公开(公告)号：US09018054B2
公开(公告)日：2015-04-28
申请号：US13815734
申请日：2013-03-15
申请人： Naomi Yoshida , Adam Brand
发明人： Naomi Yoshida , Adam Brand
IPC分类号： H01L21/84 , H01L29/78 , H01L21/28 , H01L29/49 , H01L29/66 , H01L29/51
CPC分类号： H01L29/785 , H01L21/28079 , H01L21/28088 , H01L21/28194 , H01L29/4958 , H01L29/4966 , H01L29/517 , H01L29/66545
摘要： The present invention relates to combinations of materials and fabrication techniques which are useful in the fabrication of filled, metal-comprising gates for use in planar and 3D Field Effect Transistor (FET) structures. The FET structures described are of the kind needed for improved performance in semiconductor device structures produced at manufacturing nodes which implement semiconductor feature sizes in the 15 nm range or lower.
摘要翻译：本发明涉及可用于制造用于平面和3D场效应晶体管（FET）结构的填充的含金属栅极的材料和制造技术的组合。描述的FET结构是在实现15nm或更低的半导体特征尺寸的制造节点处产生的半导体器件结构中改善性能所需的FET结构。

6. 发明申请

US20060150032A1 State management device, state management system, and job processing system 审中-公开
标题翻译：国家管理装置，国家管理体系和作业处理系统
公开(公告)号：US20060150032A1
公开(公告)日：2006-07-06
申请号：US10543373
申请日：2004-01-27
申请人： Kouji Furukawa , Kazuhiko Nakamura , Yasuhiko Handa , Naomi Yoshida , Jun Shinano , Jun Kaida
发明人： Kouji Furukawa , Kazuhiko Nakamura , Yasuhiko Handa , Naomi Yoshida , Jun Shinano , Jun Kaida
IPC分类号： G06F11/00
CPC分类号： G06F1/3203 , G06F1/3231 , G06F1/329 , G06F11/1461 , Y02D10/173 , Y02D10/24
摘要： There are provided a state monitoring device and a state management system which monitor a use state of a PC by a user by utilizing detecting results of the human detection sensor effectively. The state monitoring device (10) for detecting whether a user is present at an operative position of PC (20), is connected to the PC (20) on a LAN (30). The information provided for the PC (20) by the state monitoring device (10), is shared with all the PCs (20) on the LAN (30).
摘要翻译：提供了一种状态监视装置和状态管理系统，其通过有效地利用人体检测传感器的检测结果来监视用户的使用状态。用于检测用户是否存在于PC（20）的操作位置的状态监视设备（10）被连接到LAN（30）上的PC（20）。由状态监视装置（10）为PC（20）提供的信息与LAN（30）上的所有PC（20）共享。

7. 发明申请

US20060109022A1 Test structure design for reliability test 失效
公开(公告)号：US20060109022A1
公开(公告)日：2006-05-25
申请号：US10997267
申请日：2004-11-24
申请人： Naomi Yoshida , Toshiyuki Nagata
发明人： Naomi Yoshida , Toshiyuki Nagata
IPC分类号： G01R31/26
CPC分类号： H01L22/34 , G01R31/2831 , G01R31/2853 , G01R31/2856 , H01L2924/0002 , H01L2924/00
摘要： A flexible semiconductor test structure that may be incorporated into a semiconductor device is provided. The test structure may include a plurality of test pads designed to physically stress conductive lines to which they are attached during thermal cycling. By utilizing test pads with different dimensions (lengths and/or widths), the effects of thermal stress generated by a plurality of conductive lines having corresponding different dimensions may be simulated.

8. 发明授权

US06593252B1 Film deposition method and apparatus 失效
标题翻译：薄膜沉积方法和装置
公开(公告)号：US06593252B1
公开(公告)日：2003-07-15
申请号：US09830609
申请日：2001-04-30
申请人： Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
发明人： Yuichi Wada , Hiroyuki Yarita , Hisashi Aida , Naomi Yoshida
IPC分类号： H01L21469
CPC分类号： H01L21/6715 , C23C18/08
摘要： The present invention is characterized by comprising a supply means (28) for supplying an organometallic fluid, which has an organic metal as a main component and which precipitates film deposition material using a pyrolytic decomposition reaction; an application means (126) for applying the organometallic fluid that is supplied by said supply means onto a to-be-processed body; and a heating means (52) for heating to a predetermined temperature the to-be-processed body to which is applied the organometallic fluid by said application means; wherein said application means (126) is characterized by being outfitted with an application fluid containing body (100), which is capable of containing said organometallic fluid and capable of coming into contact with and separation from said to-be-processed body.
摘要翻译：本发明的特征在于包括用于供应有机金属液体的供给装置（28），所述有机金属液体以有机金属为主要成分，并使用热分解反应沉淀成膜材料; 用于将由所述供给装置供应的有机金属液体施加到待处理体上的施加装置（126）以及加热装置（52），用于将由所述施加装置施加有机金属液体的待处理体加热到预定温度; 其特征在于，所述施加装置（126）的特征在于，其配备有能够容纳所述有机金属液体并且能够与所述待处理体接触并与其分离的涂布液体（100）。

9. 发明申请

US20140264483A1 Metal gate structures for field effect transistors and method of fabrication 有权
标题翻译：用于场效应晶体管的金属栅极结构及其制造方法
公开(公告)号：US20140264483A1
公开(公告)日：2014-09-18
申请号：US13815734
申请日：2013-03-15
申请人： Naomi Yoshida , Adam Brand
发明人： Naomi Yoshida , Adam Brand
IPC分类号： H01L29/49 , H01L29/40
CPC分类号： H01L29/785 , H01L21/28079 , H01L21/28088 , H01L21/28194 , H01L29/4958 , H01L29/4966 , H01L29/517 , H01L29/66545
摘要： The present invention relates to combinations of materials and fabrication techniques which are useful in the fabrication of filled, metal-comprising gates for use in planar and 3D Field Effect Transistor (FET) structures. The FET structures described are of the kind needed for improved performance in semiconductor device structures produced at manufacturing nodes which implement semiconductor feature sizes in the 15 nm range or lower.
摘要翻译：本发明涉及可用于制造用于平面和3D场效应晶体管（FET）结构的填充的含金属栅极的材料和制造技术的组合。描述的FET结构是在实现15nm或更低的半导体特征尺寸的制造节点处产生的半导体器件结构中改善性能所需的FET结构。

10. 发明申请

US20050168593A1 System for automatically generating continuous developed still image from video image of inner wall of tubular object 失效
标题翻译：用于从管状物体的内壁的视频图像自动生成连续显影的静止图像的系统
公开(公告)号：US20050168593A1
公开(公告)日：2005-08-04
申请号：US10769375
申请日：2004-01-29
申请人： Naomichi Akizuki , Naomi Yoshida , Agus Suharno
发明人： Naomichi Akizuki , Naomi Yoshida , Agus Suharno
IPC分类号： G01N21/954 , G06T3/40 , H04N5/225 , H04N5/228
CPC分类号： G06T3/4038 , G01N21/954 , G06K9/32 , G06K2009/2045 , H04N2005/2255
摘要： An image processing system automatically generates a seamless and continuous developed still image with little distortion by creating a developed diagram in the circumferential direction of a tube from one frame of a video image of an inner wall of a tubular object photographed by a video camera while moving in the axial direction of the tubular object and stitching the developed diagrams with each other in the longitudinal direction (i.e., on a central axis) of the tube by mosaic processing.
摘要翻译：图像处理系统通过在移动中由摄像机拍摄的管状物体的内壁的视频图像的一帧中在管的圆周方向上产生显影图，自动生成几乎没有变形的无缝且连续显影的静止图像在管状物体的轴向上，并通过马赛克处理在管的纵向（即，在中心轴线上）彼此缝合显影图。

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