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1. 发明授权

US07217669B2 Method of forming a metal oxide film 失效
标题翻译：形成金属氧化物膜的方法
公开(公告)号：US07217669B2
公开(公告)日：2007-05-15
申请号：US10888838
申请日：2004-07-12
申请人： Han-mei Choi , Sung-tae Kim , Young-wook Park , Young-sun Kim , Ki-chul Kim , In-sung Park
发明人： Han-mei Choi , Sung-tae Kim , Young-wook Park , Young-sun Kim , Ki-chul Kim , In-sung Park
IPC分类号： H01L21/31
CPC分类号： H01L21/02356 , C23C16/405 , C23C16/452 , C23C16/56 , H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/31604
摘要： A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.
摘要翻译：在含氧活性蒸气气氛下形成由金属氧化物构成的电介质膜的方法。在形成电介质膜的方法中，使用金属有机前体和O 2 O 2气体在半导体衬底上形成金属氧化物膜，同时半导体衬底在含有氧的活性气氛下暴露，然后在半导体衬底在含有氧气的活性蒸气下暴露的同时对金属氧化物膜进行退火。退火可以在与形成金属氧化物相同或基本上相同的温度下形成金属氧化物膜，和/或至少一种不同的压力，氧浓度或氧气流速的情况下进行，如金属氧化物形成。

2. 发明授权

US06800570B2 Method of forming a metal oxide film 失效
公开(公告)号：US06800570B2
公开(公告)日：2004-10-05
申请号：US10131473
申请日：2002-04-25
申请人： Han-mei Choi , Sung-tae Kim , Young-wook Park , Young-sun Kim , Ki-chul Kim , In-sung Park
发明人： Han-mei Choi , Sung-tae Kim , Young-wook Park , Young-sun Kim , Ki-chul Kim , In-sung Park
IPC分类号： H01L2131
CPC分类号： H01L21/02356 , C23C16/405 , C23C16/452 , C23C16/56 , H01L21/02183 , H01L21/02271 , H01L21/02337 , H01L21/0234 , H01L21/02348 , H01L21/31604
摘要： A method of forming a dielectric film composed of metal oxide under an atmosphere of activated vapor containing oxygen. In the method of forming the dielectric film, a metal oxide film is formed on a semiconductor substrate using a metal organic precursor and O2 gas while the semiconductor substrate is exposed under activated vapor atmosphere containing oxygen, and then, the metal oxide film is annealed while the semiconductor substrate is exposed under activated vapor containing oxygen. The annealing may take place in situ with the formation of the metal oxide film, at the same or substantially the same temperature as the metal oxide forming, and/or at at least one of a different pressure, oxygen concentration, or oxygen flow rate as the metal oxide forming.

3. 发明授权

US06426308B1 Methods for forming films having high dielectric constants 失效
标题翻译：用于形成具有高介电常数的膜的方法
公开(公告)号：US06426308B1
公开(公告)日：2002-07-30
申请号：US09209196
申请日：1998-12-10
申请人： Young-wook Park , Moon-yong Lee , Kyung-hun Kim , In-sung Park
发明人： Young-wook Park , Moon-yong Lee , Kyung-hun Kim , In-sung Park
IPC分类号： H01L2131
CPC分类号： C23C16/56 , C23C16/405 , C23C16/46 , H01L21/31604 , H01L21/31691 , H01L28/40 , H01L28/55
摘要： A method form forming a dielectric film on a substrate includes the steps of placing the substrate in a process chamber wherein said substrate is isolated from an external environment, depositing the dielectric film on the substrate in the process chamber, and annealing the dielectric film in said process chamber. In particular, the dielectric film can be formed from Ta2O5. Systems for forming the dielectric film are also disclosed.
摘要翻译：在衬底上形成电介质膜的方法形式包括以下步骤：将衬底放置在处理室中，其中所述衬底与外部环境隔离，将电介质膜沉积在处理室中的衬底上，并将所述电介质膜退火处理室。特别地，电介质膜可以由Ta 2 O 5形成。还公开了用于形成电介质膜的系统。

4. 发明授权

US5939131A Methods for forming capacitors including rapid thermal oxidation 失效
标题翻译：形成电容器的方法包括快速热氧化
公开(公告)号：US5939131A
公开(公告)日：1999-08-17
申请号：US874614
申请日：1997-06-13
申请人： Kyung-hoon Kim , Kab-jin Nam , In-sung Park , Young-wook Park
发明人： Kyung-hoon Kim , Kab-jin Nam , In-sung Park , Young-wook Park
IPC分类号： H01L27/04 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/108 , B05P5/12
CPC分类号： H01L28/40 , H01L21/31604
摘要： A method for forming a microelectronic capacitor includes the steps of forming a first conductive layer on a substrate and forming an oxide reducing layer on the first conductive layer opposite the substrate wherein the oxide reducing layer reduces oxidation of the first conductive layer. An oxide layer is formed on the oxide reducing layer opposite the substrate, and a dielectric layer is formed on the oxide layer opposite the substrate wherein the dielectric layer has a dielectric constant that is higher than a dielectric constant of the oxide reducing layer, and higher than a dielectric constant of the oxide layer. In addition, a second conductive layer is formed on the dielectric layer opposite the substrate. Related structures are also discussed.
摘要翻译：一种形成微电子电容器的方法包括以下步骤：在衬底上形成第一导电层，并在与衬底相对的第一导电层上形成氧化物还原层，其中氧化物还原层减少第一导电层的氧化。在与衬底相对的氧化物还原层上形成氧化物层，并且在与衬底相对的氧化物层上形成介电层，其中介电层的介电常数高于氧化物还原层的介电常数，并且更高比氧化物层的介电常数大。此外，在与衬底相对的电介质层上形成第二导电层。还讨论了相关结构。

5. 发明授权

US5910218A Systems for forming films having high dielectric constants 失效
标题翻译：用于形成具有高介电常数的膜的系统
公开(公告)号：US5910218A
公开(公告)日：1999-06-08
申请号：US707904
申请日：1996-09-12
申请人： Young-wook Park , Moon-yong Lee , Kyung-hun Kim , In-sung Park
发明人： Young-wook Park , Moon-yong Lee , Kyung-hun Kim , In-sung Park
IPC分类号： C23C16/48 , C23C16/40 , C23C16/46 , C23C16/56 , H01L21/02 , H01L21/285 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , C23C16/00
CPC分类号： C23C16/56 , C23C16/405 , C23C16/46 , H01L21/31604 , H01L21/31691 , H01L28/40 , H01L28/55
摘要： A method form forming a dielectric film on a substrate includes the steps of placing the substrate in a process chamber wherein said substrate is isolated from an external environment, depositing the dielectric film on the substrate in the process chamber, and annealing the dielectric film in said process chamber. In particular, the dielectric film can be formed from Ta.sub.2 O.sub.5. Systems for forming the dielectric film are also disclosed.
摘要翻译：在衬底上形成电介质膜的方法形式包括以下步骤：将衬底放置在处理室中，其中所述衬底与外部环境隔离，将电介质膜沉积在处理室中的衬底上，并将所述电介质膜退火处理室。特别地，电介质膜可以由Ta 2 O 5形成。还公开了用于形成电介质膜的系统。

6. 发明授权

US06680251B2 Methods of chemical vapor depositing ruthenium by varying chemical vapor deposition parameters 有权
标题翻译：通过改变化学气相沉积参数化学气相沉积钌的方法
公开(公告)号：US06680251B2
公开(公告)日：2004-01-20
申请号：US10080000
申请日：2002-02-21
申请人： Seok-jun Won , Cha-young Yoo , Sung-tae Kim , Young-wook Park , Yun-jung Lee , Soon-yeon Park
发明人： Seok-jun Won , Cha-young Yoo , Sung-tae Kim , Young-wook Park , Yun-jung Lee , Soon-yeon Park
IPC分类号： H01L2144
CPC分类号： H01L21/28556 , C23C16/0272 , C23C16/40 , H01L21/28568 , H01L28/55 , H01L28/60
摘要： A layer is formed by chemical vapor depositing a seeding layer of ruthenium oxide on a substrate at a chemical vapor deposition flow rate ratio of a ruthenium source to oxygen gas. A main layer of ruthenium is chemical vapor deposited on the seeding layer by increasing the chemical vapor deposition flow rate ratio of the ruthenium source to the oxygen gas.
摘要翻译：通过以钌源与氧气的化学气相沉积流速比在化学气相沉积基底上的氧化钌晶面层形成层。钌的主层通过提高钌源与氧气的化学气相沉积流速比化学气相沉积在接种层上。

7. 发明授权

US6117692A Calibrated methods of forming hemispherical grained silicon layers 失效
标题翻译：形成半球形硅层的校准方法
公开(公告)号：US6117692A
公开(公告)日：2000-09-12
申请号：US7879
申请日：1998-01-14
申请人： Young-sun Kim , Young-wook Park
发明人： Young-sun Kim , Young-wook Park
IPC分类号： H01L21/02 , G01R31/26
CPC分类号： H01L28/84
摘要： A method of forming a silicon layer includes the step of calibrating the heater temperature so that a predetermined temperature is maintained when a microelectronic substrate is subsequently heated despite a number of processing runs previously performed. This calibrating step includes loading a test substrate into the reaction chamber, subjecting the test substrate to the predetermined reaction recipe wherein the test substrate is heated according to the predetermined recipe, measuring the temperature of the substrate, and removing the test substrate from the reaction chamber. The heater temperature is then adjusted according to the measured temperature of the test substrate. A microelectronic substrate is then loaded into the reaction chamber, and a hemispherical grained silicon seed layer is formed on the microelectronic substrate according to the predetermined recipe. The hemispherical grained silicon seed layer is annealed to form a hemispherical grained silicon layer according to the predetermined recipe.
摘要翻译：形成硅层的方法包括校准加热器温度的步骤，使得当微电子基板随后被加热而保持预定温度，而不管先前执行了多个处理运行。该校准步骤包括将测试基板装载到反应室中，使测试基板经受预定的反应配方，其中根据预定配方加热测试基板，测量基板的温度，并将测试基板从反应室。然后根据测试基板的测量温度调节加热器温度。然后将微电子衬底加载到反应室中，并根据预定的配方在微电子衬底上形成半球状晶粒硅籽晶层。根据预定的配方，将半球形晶粒硅层退火以形成半球形的硅层。

8. 发明授权

US06194263B1 Methods for forming capacitor structures including etching pits 失效
标题翻译：用于形成包括蚀刻坑的电容器结构的方法
公开(公告)号：US06194263B1
公开(公告)日：2001-02-27
申请号：US08729232
申请日：1996-10-09
申请人： Young-sun Kim , Young-wook Park
发明人： Young-sun Kim , Young-wook Park
IPC分类号： H01L218242
CPC分类号： H01L28/84 , H01L27/10852 , H01L28/90
摘要： A method for forming an electrode structure includes the steps of forming a conductive electrode on the microelectronic substrate, forming HSG-silicon seeds on the surface of the conductive electrode, and etching the conductive electrode using the HSG-silicon seeds as a mask so that pits are formed between the HSG-silicon seeds. In addition, the HSG-silicon seeds on the conductive electrode can be grown to form enlarged HSG-silicon bumps on the conductive electrode further increasing the surface area thereof. Related structures are also discussed.
摘要翻译：一种形成电极结构的方法包括以下步骤：在微电子衬底上形成导电电极，在导电电极的表面上形成HSG-硅晶种，并使用HSG-硅晶种作为掩模蚀刻导电电极，使得凹坑形成在HSG-硅种子之间。此外，导电电极上的HSG-硅晶种可以生长以在导电电极上形成扩大的HSG-硅凸块，进一步增加其表面积。还讨论了相关结构。

9. 发明授权

US6004858A Methods of forming hemispherical grained silicon (HSG-Si) capacitor structures including protective layers 失效
标题翻译：形成包括保护层的半球形硅（HSG-Si）电容器结构的方法
公开(公告)号：US6004858A
公开(公告)日：1999-12-21
申请号：US988858
申请日：1997-12-11
申请人： Se-jin Shim , Young-sun Kim , Cha-young Yoo , Young-wook Park
发明人： Se-jin Shim , Young-sun Kim , Cha-young Yoo , Young-wook Park
IPC分类号： H01L21/02 , H01L21/20
CPC分类号： H01L28/84
摘要： A method of forming a capacitor structure includes the steps of forming a conductive layer on a microelectronic substrate, and forming a first hemispherical grained silicon layer on the conductive layer opposite the substrate. A protective layer is formed on the hemispherical grained silicon layer. The protective layer, the first hemispherical grained silicon layer, and the conductive layer are then patterned so that portions of the microelectronic substrate are exposed adjacent the patterned conductive layer. A second hemispherical grained silicon layer is formed on the surface of the protective layer opposite the first hemispherical grained silicon layer, on sidewalls of the patterned conductive layer, and on the exposed portions of the microelectronic substrate. Portions of the second hemispherical grained silicon layer are removed from the exposed portions of the microelectronic substrate, and the patterned protective layer is then removed.
摘要翻译：一种形成电容器结构的方法包括以下步骤：在微电子衬底上形成导电层，并在与衬底相对的导电层上形成第一半球晶粒硅层。在半球状粒状硅层上形成保护层。然后对保护层，第一半球形晶粒硅层和导电层进行构图，使得微电子衬底的部分暴露在图案化导电层附近。在保护层的与第一半球状粒状硅层相对的表面上，在图案化的导电层的侧壁上，以及微电子衬底的露出部分上形成第二半球状粒状硅层。从微电子衬底的暴露部分去除第二半球形硅层的一部分，然后去除图案化的保护层。

10. 发明授权

US6087226A Methods of forming capacitors including electrodes with hemispherical grained silicon layers on sidewalls thereof and related structures 失效
标题翻译：形成电容器的方法，其包括在其侧壁上具有半球形硅层的电极和相关结构
公开(公告)号：US6087226A
公开(公告)日：2000-07-11
申请号：US48501
申请日：1998-03-26
申请人： Young-sun Kim , Se-jin Shim , Cha-young Yoo , Young-wook Park
发明人： Young-sun Kim , Se-jin Shim , Cha-young Yoo , Young-wook Park
IPC分类号： H01L21/02 , H01L21/8242 , H01L21/8234
CPC分类号： H01L28/82 , H01L27/10852 , H01L28/84 , H01L28/90
摘要： A method of forming an integrated circuit device includes forming a conductive layer on an integrated circuit substrate, and forming a buffer layer on the conductive layer opposite the integrated circuit substrate. The buffer layer and the conductive layer are patterned to provide a mesa structure including the patterned buffer and conductive layers. A conductive spacer is formed along a sidewall of the mesa structure, and a hemispherical grained silicon layer is formed on the conductive spacer opposite the sidewall of the mesa structure. The patterned buffer layer is then removed after the step of forming the hemispherical grained silicon layer. Related structures are also discussed.
摘要翻译：形成集成电路器件的方法包括在集成电路衬底上形成导电层，并在与集成电路衬底相对的导电层上形成缓冲层。将缓冲层和导电层图案化以提供包括图案化缓冲层和导电层的台面结构。沿着台面结构的侧壁形成导电间隔物，并且在与台面结构的侧壁相对的导电间隔物上形成半球状的硅层。然后在形成半球形颗粒硅层的步骤之后去除图案化的缓冲层。还讨论了相关结构。

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