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1. 发明授权

US07192530B2 Method of manufacturing distributed analog phase shifter using etched ferroelectric thin film 失效
标题翻译：使用蚀刻铁电薄膜制造分布式模拟移相器的方法
公开(公告)号：US07192530B2
公开(公告)日：2007-03-20
申请号：US10796628
申请日：2004-03-08
申请人： Han Cheol Ryu , Seungeon Moon , Min Hwan Kwak , Su Jae Lee , Sang Seok Lee , Young Tae Kim
发明人： Han Cheol Ryu , Seungeon Moon , Min Hwan Kwak , Su Jae Lee , Sang Seok Lee , Young Tae Kim
IPC分类号： H01P1/18
CPC分类号： H01P1/181
摘要： Provided are a distributed analog phase shifter and a method of manufacturing the same, which reduce a change in a characteristic impedance while changing a phase velocity with respect to an applied voltage. In the distributed analog phase shifter, a coplanar waveguide (CPW) is formed in a line form on a substrate. A plurality of ferroelectric capacitors is periodically loaded to the CPW. The ferroelectric capacitors include a ferroelectric film in a pattern form and defines the ferroelectric film affected by the applied voltage within an area of the ferroelectric capacitors. Accordingly, the change in the phase velocity with respect to the applied voltage is maintained without the change of the CPW characteristic and a return loss characteristic and a total insertion loss are improved since a total dielectric loss of the ferroelectric film is decreased.
摘要翻译：提供了一种分布式模拟移相器及其制造方法，其在相对于施加电压改变相位速度的同时减小特性阻抗的变化。在分布式模拟移相器中，共面波导（CPW）以线形式形成在基板上。多个铁电电容器被周期性地加载到CPW。铁电电容器包括图案形式的铁电体膜，并且限定受强电介质电容器的区域内的施加电压影响的铁电体膜。因此，由于铁电体膜的总介电损耗降低，所以相对于施加电压的相位速度的变化保持不变，CPW特性的变化，回波损耗特性和总插入损耗得到改善。

2. 发明申请

US20050040915A1 Distributed analog phase shifter using etched ferroelectric thin film and method of manufacturing the same 失效
标题翻译：使用蚀刻铁电薄膜的分布式模拟移相器及其制造方法
公开(公告)号：US20050040915A1
公开(公告)日：2005-02-24
申请号：US10796628
申请日：2004-03-08
申请人： Han Ryu , Seungeon Moon , Min Hwan Kwak , Su Jae Lee , Sang Seok Lee , Young Tae Kim
发明人： Han Ryu , Seungeon Moon , Min Hwan Kwak , Su Jae Lee , Sang Seok Lee , Young Tae Kim
IPC分类号： H01Q21/00 , H01P1/18
CPC分类号： H01P1/181
摘要： Provided are a distributed analog phase shifter and a method of manufacturing the same, which reduce a change in a characteristic impedance while changing a phase velocity with respect to an applied voltage. In the distributed analog phase shifter, a coplanar waveguide (CPW) is formed in a line form on a substrate. A plurality of ferroelectric capacitors is periodically loaded to the CPW. The ferroelectric capacitors include a ferroelectric film in a pattern form and defines the ferroelectric film affected by the applied voltage within an area of the ferroelectric capacitors. Accordingly, the change in the phase velocity with respect to the applied voltage is maintained without the change of the CPW characteristic and a return loss characteristic and a total insertion loss are improved since a total dielectric loss of the ferroelectric film is decreased.
摘要翻译：提供了一种分布式模拟移相器及其制造方法，其在相对于施加电压改变相位速度的同时减小特性阻抗的变化。在分布式模拟移相器中，共面波导（CPW）以线形式形成在基板上。多个铁电电容器被周期性地加载到CPW。铁电电容器包括图案形式的铁电体膜，并且限定受强电介质电容器的区域内的施加电压影响的铁电体膜。因此，由于铁电体膜的总介电损耗降低，所以保持相位速度相对于施加电压的变化而不改变CPW特性，并且回波损耗特性和总插入损耗得到改善。

3. 发明授权

US07274058B2 Ferroelectric/paraelectric multilayer thin film, method of forming the same, and high frequency variable device using the same 失效
标题翻译：铁电/顺电多层薄膜，其形成方法和使用其的高频可变装置
公开(公告)号：US07274058B2
公开(公告)日：2007-09-25
申请号：US11180744
申请日：2005-07-12
申请人： Su Jae Lee , Seung Eon Moon , Han Cheol Ryu , Min Hwan Kwak , Kwang Yong Kang
发明人： Su Jae Lee , Seung Eon Moon , Han Cheol Ryu , Min Hwan Kwak , Kwang Yong Kang
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L21/022 , H01G7/06 , H01L21/02197 , H01L21/0226 , H01L21/31691 , H01L28/56 , H01P1/181
摘要： A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABO3 structure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaxSr1-x)TiO3 thin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.
摘要翻译：具有介电常数高的调谐率和小的介电损耗的铁电/直流多层薄膜，以克服介电常数的调谐率和铁电薄膜的介电损耗的限制，其形成方法和高提供具有铁电/顺电多层薄膜的高频可变器件。铁电/顺电多层薄膜包括在基板上形成的钙钛矿ABO 3结构顺电晶种层，外延铁电（Ba x Sr Sr 1-x < / SUB>）TiO 3薄膜形成在顺电种子层上。高频可变装置可以实现具有高速度，低功耗，低价格和优异的微波特性的RF频率/相位可变装置。

4. 发明申请

US20100147684A1 ULTRA-SENSITIVE GAS SENSOR USING OXIDE SEMICONDUCTOR NANOFIBER AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：使用氧化物半导体纳米纤维的超声波气体传感器及其制造方法
公开(公告)号：US20100147684A1
公开(公告)日：2010-06-17
申请号：US12503647
申请日：2009-07-15
申请人： Jin Ah PARK , Su Jae Lee , Jae Hyun Moon , Tae Hyoung Zhung
发明人： Jin Ah PARK , Su Jae Lee , Jae Hyun Moon , Tae Hyoung Zhung
IPC分类号： G01N27/26 , B05D5/12
CPC分类号： G01N27/127
摘要： An ultra-sensitive gas sensor using semiconductor oxide nanofibers and a method of fabricating the same are provided. The gas sensor includes an insulating substrate, a metal electrode formed on the insulating substrate, and a semiconductor metal oxide nanofibers layer formed on the metal electrode and having nanoparticles of high sensitivity coated thereon. The method of fabricating a semiconductor oxide nanofibers gas sensor includes fabricating an oxide using a solution for electrospinning, electrospinning the solution, performing an annealing process to form an oxide semiconductor nanofiber, and partially coating a nano-sized metal oxide or metal catalyst particle having high sensitivity to a specific gas on a surface of the nanofiber having a large specific surface area. As a result, a semiconductor oxide nanofibers gas sensor having ultra sensitivity, high selectivity, fast response and long-term stability can be fabricated.
摘要翻译：提供了使用半导体氧化物纳米纤维的超灵敏气体传感器及其制造方法。气体传感器包括绝缘基板，形成在绝缘基板上的金属电极和形成在金属电极上并具有高敏感度的纳米颗粒的半导体金属氧化物纳米纤维层。制造半导体氧化物纳米纤维气体传感器的方法包括使用静电纺丝溶液，静电纺丝溶液制造氧化物，进行退火处理以形成氧化物半导体纳米纤维，并部分涂覆具有高的氧化物半导体纳米纤维的纳米尺寸的金属氧化物或金属催化剂颗粒对具有大比表面积的纳米纤维的表面上的特定气体的敏感性。结果，可以制造具有超灵敏度，高选择性，快速响应和长期稳定性的半导体氧化物纳米纤维气体传感器。

5. 发明申请

US20070132065A1 Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same 审中-公开
标题翻译：用于高频可调谐器件的高电平薄膜结构和高频可调谐器件
公开(公告)号：US20070132065A1
公开(公告)日：2007-06-14
申请号：US11389761
申请日：2006-03-27
申请人： Su Jae Lee , Han Ryu , Seung Moon , Young Kim , Min Kwak , Kwang Kang
发明人： Su Jae Lee , Han Ryu , Seung Moon , Young Kim , Min Kwak , Kwang Kang
IPC分类号： H01L29/93 , H01L21/20
CPC分类号： H01G4/1227 , H01G4/33 , H01G7/06 , H01L21/31691 , H01L28/56
摘要： Provided are a paraelectric thin film structure and a high frequency tunable device with the paraelectric thin film structure. The paraelectric thin film structure has a large dielectric constant tuning rate and a low dielectric loss at a high frequency. The paraelectric thin film structure includes a perovskite ABO3 type paraelectric film formed on an oxide single crystal substrate. The paraelectric film is formed of a material selected from Ba(Zrx,Ti1-x)O3, Ba(Hfy,Ti1-y)O3, or Ba(Snz,Ti1-z)O3. Instead of the paraelectric film, the paraelectric thin film structure may include a compositionally graded paraelectric film having at least two paraelectric films formed of the selected material by varying the composition ratio x, y, or z. A high-frequency/phase tunable device employing the paraelectric thin film structure can have improved microwave characteristics and high-speed, low-power-consuming, low-cost characteristics.
摘要翻译：提供了顺电薄膜结构和具有顺电薄膜结构的高频可调谐器件。顺电薄膜结构在高频下具有大的介电常数调谐率和低的介电损耗。顺电薄膜结构包括在氧化物单晶衬底上形成的钙钛矿型ABO 3 N型顺电膜。所述顺电膜由选自Ba（Zr 1 x 1，Ti 1-x O）O 3 3，Ba（HfO 3） Y 1，Y 1，Y 3，Z 3，Z a，Z z， 3＆gt; 3＆lt; 3＆gt; 代替顺电膜，顺电薄膜结构可以包括通过改变组成比x，y或z而具有由所选择的材料形成的至少两个顺电膜的组成分级的副电介质膜。采用顺电薄膜结构的高频/相位可调谐装置可以具有改进的微波特性和高速，低功耗，低成本的特性。

6. 发明授权

US08723042B2 Flexible flat cable and manufacturing method thereof 失效
标题翻译：柔性扁平电缆及其制造方法
公开(公告)号：US08723042B2
公开(公告)日：2014-05-13
申请号：US13406546
申请日：2012-02-28
申请人： Yong Suk Yang , In-Kyu You , Jae Bon Koo , Su Jae Lee , Taeyoub Kim , Soon-Won Jung , Kang-Jun Baeg
发明人： Yong Suk Yang , In-Kyu You , Jae Bon Koo , Su Jae Lee , Taeyoub Kim , Soon-Won Jung , Kang-Jun Baeg
IPC分类号： H01B7/00
CPC分类号： H01B13/06 , H01B3/421 , H01B7/0838 , H01B7/0861 , H01B13/0013
摘要： A flexible flat cable which includes wire cores, insulation coating layers surrounding the wire cores, shield coating layers surrounding the insulation coating layers, an upper insulation plate layer formed on the shield coating layers, a lower insulation plate layer formed under the shield coating layers and opposite to the upper insulation plate layer, and a shield plate layer formed under the lower insulation plate layer.
摘要翻译：一种柔性扁平电缆，包括线芯，围绕线芯的绝缘涂层，围绕绝缘涂层的屏蔽涂层，形成在屏蔽涂层上的上绝缘板层，形成在屏蔽涂层下面的下绝缘板层，以及与上绝缘板层相对，以及形成在下绝缘板层下方的屏蔽板层。

7. 发明授权

US08281642B2 Environmental gas sensor and method of manufacturing the same 有权
标题翻译：环境气体传感器及其制造方法
公开(公告)号：US08281642B2
公开(公告)日：2012-10-09
申请号：US12787806
申请日：2010-05-26
申请人： Su Jae Lee , Jin Ah Park , Jae Hyun Moon , Seong Hyun Kim , Tae Hyoung Zyung , Hye Yong Chu
发明人： Su Jae Lee , Jin Ah Park , Jae Hyun Moon , Seong Hyun Kim , Tae Hyoung Zyung , Hye Yong Chu
IPC分类号： G01N27/04
CPC分类号： G01N27/127
摘要： Provided are an environmental gas sensor and a method of manufacturing the same. The environmental gas sensor includes an insulating substrate, metal electrodes formed on the insulating substrate, and a sensing layer in which different kinds of nanofibers are arranged perpendicular to each other on the metal electrodes. Thus, the environmental gas sensor can simultaneously sense two kinds of gases.
摘要翻译：提供了一种环境气体传感器及其制造方法。环境气体传感器包括绝缘基板，形成在绝缘基板上的金属电极和在金属电极上彼此垂直布置不同种类的纳米纤维的感测层。因此，环境气体传感器可以同时感测两种气体。

8. 发明申请

US20110227061A1 SEMICONDUCTOR OXIDE NANOFIBER-NANOROD HYBRID STRUCTURE AND ENVIRONMENTAL GAS SENSOR USING THE SAME 审中-公开
标题翻译：半导体氧化物NANOFIBER-NANOROD混合结构和使用其的环境气体传感器
公开(公告)号：US20110227061A1
公开(公告)日：2011-09-22
申请号：US12948022
申请日：2010-11-17
申请人： Su Jae Lee , Chae Ryong Cho
发明人： Su Jae Lee , Chae Ryong Cho
IPC分类号： H01L29/12 , H01L21/64 , B82Y99/00 , B82Y40/00
CPC分类号： B82Y30/00 , B82Y40/00 , G01N27/127
摘要： Provided is an environmental gas sensor including an insulating substrate, a metal electrode formed above the insulating substrate, and a sensing layer formed of a semiconductor oxide nanofiber-nanorod hybrid structure above the metal electrode. The environmental gas sensor can have excellent characteristics of ultra high sensitivity, high selectivity, high responsiveness and low power consumption by forming a semiconductor oxide nanorod having high sensitivity to a specific gas on a semiconductor oxide nanofiber.
摘要翻译：提供一种环境气体传感器，其包括绝缘基板，形成在绝缘基板上方的金属电极以及由金属电极上方的半导体氧化物纳米纤维 - 纳米棒混合结构形成的感测层。通过形成对半导体氧化物纳米纤维上的特定气体具有高灵敏度的半导体氧化物纳米棒，环境气体传感器可以具有超高灵敏度，高选择性，高响应性和低功耗的优异特性。

9. 发明申请

US20100133528A1 CAPACITIVE GAS SENSOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：电容式气体传感器及其制造方法
公开(公告)号：US20100133528A1
公开(公告)日：2010-06-03
申请号：US12502824
申请日：2009-07-14
申请人： Jaehyun MOON , Su Jae Lee , Jin Ah Park , Tae Hyoung Zyung
发明人： Jaehyun MOON , Su Jae Lee , Jin Ah Park , Tae Hyoung Zyung
IPC分类号： H01L29/22 , H01L21/28
CPC分类号： G01N27/227 , Y10S977/921
摘要： A capacitive gas sensor and a method of fabricating the same are provided. The capacitive gas sensor includes an insulating substrate, a metal electrode and a micro thin-film heater wire integrally formed on the same plane of the insulating substrate, and an oxide detection layer coated on the metal electrode and the micro thin-film heater wire. The fabrication method includes depositing a metal layer on an insulating substrate, etching the metal layer so that a metal electrode and a micro thin-film heater wire form an interdigital transducer on the same plane, and forming a nano crystal complex oxide thin film or a complex oxide nano fiber coating layer on the metal electrode and the micro thin-film heater wire as a detecting layer. The capacitive gas sensor can be easily fabricated and can have excellent characteristics such as high sensitivity, high selectivity, high stability, and low power consumption.
摘要翻译：提供了一种电容式气体传感器及其制造方法。电容性气体传感器包括绝缘基板，金属电极和整体形成在绝缘基板的同一平面上的微薄膜加热丝，以及涂覆在金属电极和微薄膜加热丝上的氧化物检测层。该制造方法包括在绝缘基板上沉积金属层，蚀刻金属层，使得金属电极和微薄膜加热丝线在同一平面上形成叉指式换能器，并形成纳米晶体复合氧化物薄膜或金属电极上的复合氧化物纳米纤维涂层和微薄膜加热丝作为检测层。电容气体传感器可以容易地制造，并且可以具有优异的特性，例如高灵敏度，高选择性，高稳定性和低功耗。

10. 发明授权

US07816681B2 Capacitive gas sensor and method of fabricating the same 有权
标题翻译：电容式气体传感器及其制造方法
公开(公告)号：US07816681B2
公开(公告)日：2010-10-19
申请号：US12502824
申请日：2009-07-14
申请人： Jaehyun Moon , Su Jae Lee , Jin Ah Park , Tae Hyoung Zyung
发明人： Jaehyun Moon , Su Jae Lee , Jin Ah Park , Tae Hyoung Zyung
IPC分类号： H01L21/28 , H01L29/22
CPC分类号： G01N27/227 , Y10S977/921
摘要： A capacitive gas sensor and a method of fabricating the same are provided. The capacitive gas sensor includes an insulating substrate, a metal electrode and a micro thin-film heater wire integrally formed on the same plane of the insulating substrate, and an oxide detection layer coated on the metal electrode and the micro thin-film heater wire. The fabrication method includes depositing a metal layer on an insulating substrate, etching the metal layer so that a metal electrode and a micro thin-film heater wire form an interdigital transducer on the same plane, and forming a nano crystal complex oxide thin film or a complex oxide nano fiber coating layer on the metal electrode and the micro thin-film heater wire as a detecting layer. The capacitive gas sensor can be easily fabricated and can have excellent characteristics such as high sensitivity, high selectivity, high stability, and low power consumption.
摘要翻译：提供了一种电容式气体传感器及其制造方法。电容性气体传感器包括绝缘基板，金属电极和整体形成在绝缘基板的同一平面上的微薄膜加热丝，以及涂覆在金属电极和微薄膜加热丝上的氧化物检测层。该制造方法包括在绝缘基板上沉积金属层，蚀刻金属层，使得金属电极和微薄膜加热丝线在同一平面上形成叉指式换能器，并形成纳米晶体复合氧化物薄膜或金属电极上的复合氧化物纳米纤维涂层和微薄膜加热丝作为检测层。电容气体传感器可以容易地制造，并且可以具有优异的特性，例如高灵敏度，高选择性，高稳定性和低功耗。

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