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1. 发明申请

US20100147684A1 ULTRA-SENSITIVE GAS SENSOR USING OXIDE SEMICONDUCTOR NANOFIBER AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：使用氧化物半导体纳米纤维的超声波气体传感器及其制造方法
公开(公告)号：US20100147684A1
公开(公告)日：2010-06-17
申请号：US12503647
申请日：2009-07-15
申请人： Jin Ah PARK , Su Jae Lee , Jae Hyun Moon , Tae Hyoung Zhung
发明人： Jin Ah PARK , Su Jae Lee , Jae Hyun Moon , Tae Hyoung Zhung
IPC分类号： G01N27/26 , B05D5/12
CPC分类号： G01N27/127
摘要： An ultra-sensitive gas sensor using semiconductor oxide nanofibers and a method of fabricating the same are provided. The gas sensor includes an insulating substrate, a metal electrode formed on the insulating substrate, and a semiconductor metal oxide nanofibers layer formed on the metal electrode and having nanoparticles of high sensitivity coated thereon. The method of fabricating a semiconductor oxide nanofibers gas sensor includes fabricating an oxide using a solution for electrospinning, electrospinning the solution, performing an annealing process to form an oxide semiconductor nanofiber, and partially coating a nano-sized metal oxide or metal catalyst particle having high sensitivity to a specific gas on a surface of the nanofiber having a large specific surface area. As a result, a semiconductor oxide nanofibers gas sensor having ultra sensitivity, high selectivity, fast response and long-term stability can be fabricated.
摘要翻译：提供了使用半导体氧化物纳米纤维的超灵敏气体传感器及其制造方法。气体传感器包括绝缘基板，形成在绝缘基板上的金属电极和形成在金属电极上并具有高敏感度的纳米颗粒的半导体金属氧化物纳米纤维层。制造半导体氧化物纳米纤维气体传感器的方法包括使用静电纺丝溶液，静电纺丝溶液制造氧化物，进行退火处理以形成氧化物半导体纳米纤维，并部分涂覆具有高的氧化物半导体纳米纤维的纳米尺寸的金属氧化物或金属催化剂颗粒对具有大比表面积的纳米纤维的表面上的特定气体的敏感性。结果，可以制造具有超灵敏度，高选择性，快速响应和长期稳定性的半导体氧化物纳米纤维气体传感器。

2. 发明申请

US20110120866A1 ENVIRONMENTAL GAS SENSOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：环境气体传感器及其制造方法
公开(公告)号：US20110120866A1
公开(公告)日：2011-05-26
申请号：US12787806
申请日：2010-05-26
申请人： Su Jae LEE , Jin Ah Park , Jae Hyun Moon , Seong Hyun Kim , Tae Hyoung Zyung , Hye Yong Chu
发明人： Su Jae LEE , Jin Ah Park , Jae Hyun Moon , Seong Hyun Kim , Tae Hyoung Zyung , Hye Yong Chu
IPC分类号： G01N27/26 , B29C47/06
CPC分类号： G01N27/127
摘要： Provided are an environmental gas sensor and a method of manufacturing the same. The environmental gas sensor includes an insulating substrate, metal electrodes formed on the insulating substrate, and a sensing layer in which different kinds of nanofibers are arranged perpendicular to each other on the metal electrodes. Thus, the environmental gas sensor can simultaneously sense two kinds of gases.
摘要翻译：提供了一种环境气体传感器及其制造方法。环境气体传感器包括绝缘基板，形成在绝缘基板上的金属电极和在金属电极上彼此垂直布置不同种类的纳米纤维的感测层。因此，环境气体传感器可以同时感测两种气体。

3. 发明授权

US08281642B2 Environmental gas sensor and method of manufacturing the same 有权
标题翻译：环境气体传感器及其制造方法
公开(公告)号：US08281642B2
公开(公告)日：2012-10-09
申请号：US12787806
申请日：2010-05-26
申请人： Su Jae Lee , Jin Ah Park , Jae Hyun Moon , Seong Hyun Kim , Tae Hyoung Zyung , Hye Yong Chu
发明人： Su Jae Lee , Jin Ah Park , Jae Hyun Moon , Seong Hyun Kim , Tae Hyoung Zyung , Hye Yong Chu
IPC分类号： G01N27/04
CPC分类号： G01N27/127
摘要： Provided are an environmental gas sensor and a method of manufacturing the same. The environmental gas sensor includes an insulating substrate, metal electrodes formed on the insulating substrate, and a sensing layer in which different kinds of nanofibers are arranged perpendicular to each other on the metal electrodes. Thus, the environmental gas sensor can simultaneously sense two kinds of gases.
摘要翻译：提供了一种环境气体传感器及其制造方法。环境气体传感器包括绝缘基板，形成在绝缘基板上的金属电极和在金属电极上彼此垂直布置不同种类的纳米纤维的感测层。因此，环境气体传感器可以同时感测两种气体。

4. 发明申请

US20090148347A1 NANO-CRYSTALLINE COMPOSITE-OXIDE THIN FILM, ENVIRONMENTAL GAS SENSOR USING THE THIN FILM, AND METHOD OF MANUFACTURING THE ENVIRONMENTAL GAS SENSOR 审中-公开
标题翻译：纳米晶体复合氧化物薄膜，使用薄膜的环境气体传感器，以及制造环境气体传感器的方法
公开(公告)号：US20090148347A1
公开(公告)日：2009-06-11
申请号：US12190991
申请日：2008-08-13
申请人： Su Jae LEE , Jin Ah Park , Jae Hyun Moon , Tae Hyoung Zyung
发明人： Su Jae LEE , Jin Ah Park , Jae Hyun Moon , Tae Hyoung Zyung
IPC分类号： G01N7/00 , C01B13/14 , H01L21/36
CPC分类号： C04B35/4682 , C04B2235/3251 , C23C14/08 , G01N27/125
摘要： A nano-crystalline composite-oxide thin film for an environmental gas sensor, an environmental gas sensor using the thin film, and a method of manufacturing the environmental gas sensor are provided. The nano-crystalline composite-oxide thin film is formed of hetero-oxide nano-crystalline particles having independent crystalline phases from each other, and the environmental gas sensor including the thin film has excellent characteristics including high sensitivity, high selectivity, high stability and low power consumption.
摘要翻译：提供了一种用于环境气体传感器的纳米结晶复合氧化物薄膜，使用该薄膜的环境气体传感器，以及制造环境气体传感器的方法。纳米晶复合氧化物薄膜由具有独立结晶相的异质氧化物纳米晶体颗粒形成，包括薄膜的环境气体传感器具有包括高灵敏度，高选择性，高稳定性和低的特性能量消耗。

5. 发明授权

US07642143B2 Method of fabricating thin film transistor having multilayer structure and active matrix display device including the thin film transistor 失效
标题翻译：制造具有多层结构的薄膜晶体管的方法和包括该薄膜晶体管的有源矩阵显示装置
公开(公告)号：US07642143B2
公开(公告)日：2010-01-05
申请号：US11870809
申请日：2007-10-11
申请人： Yong Hae Kim , Choong Heui Chung , Jae Hyun Moon , Yoon Ho Song
发明人： Yong Hae Kim , Choong Heui Chung , Jae Hyun Moon , Yoon Ho Song
IPC分类号： H01L21/338
CPC分类号： H01L29/78603 , H01L27/124 , H01L29/4908
摘要： Provided are a method of fabricating a multilayered thin film transistor using a plastic substrate and an active matrix display device including the thin film transistor fabricated by the method. The method includes: preparing a substrate formed of plastic; forming a buffer insulating layer on the plastic substrate; forming a silicon layer on the buffer insulating layer; patterning the silicon layer to form an active layer; forming a gate insulating layer on the active layer; stacking a plurality of gate metal layers on the gate insulating layer; patterning the plurality of gate metal layers; and etching a corner region of the lowest gate metal layer formed on the gate insulating layer of the patterned gate metal layers. Accordingly, a gate metal is formed which includes a multilayered gate metal layer and has an etched corner region, thereby reducing an electric field of the corner to reduce a leakage current of the TFT.
摘要翻译：提供了使用塑料基板制造多层薄膜晶体管的方法和包括通过该方法制造的薄膜晶体管的有源矩阵显示装置。该方法包括：制备由塑料形成的基材; 在塑料基板上形成缓冲绝缘层; 在所述缓冲绝缘层上形成硅层; 图案化硅层以形成有源层; 在有源层上形成栅极绝缘层; 在栅绝缘层上堆叠多个栅极金属层; 图案化多个栅极金属层; 并且蚀刻形成在图案化栅极金属层的栅极绝缘层上的最低栅极金属层的拐角区域。因此，形成栅极金属，其包括多层栅极金属层并且具有蚀刻的拐角区域，从而减小拐角的电场以减小TFT的漏电流。

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