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1. 发明专利

JP2008010866A Manufacturing method of cylinder type capacitor utilizing amorphous carbon layer 有权
标题翻译：使用不规则碳层的气缸型电容器的制造方法
公开(公告)号：JP2008010866A
公开(公告)日：2008-01-17
申请号：JP2007160301
申请日：2007-06-18
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： BOKU KIZEN , RO SAISEI , KIL DEOK-SIN , SO KANSO , YEOM SEUNG JIN , KIM JIN-HYOCK , LEE KI-JUNG
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L28/91 , H01L27/10852
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a capacitor of a semiconductor device capable of preventing a bridge phenomenon between adjacent storage nodes in a wet dip-out process, even if the height of a cylinder is made high.
SOLUTION: The method includes the steps of: forming an isolation structure of a lamination structure, with an intermediate layer inserted on a semiconductor substrate on which a contact plug is formed; forming an open area for opening a part of the contact plug by etching the isolation structure; forming a storage node 32A on the open area; forming a patterned intermediate layer 27A in which a part of the isolation structure is etched and a part of the storage node 32A is surrounded; supporting the storage node 32A; removing a residual part of the isolation structure; and removing the patterned intermediate layer and exposing all of an inner wall and an outer wall of the storage node 32A.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：即使使气缸的高度变高，也能够提供能够防止湿式浸出处理中的相邻存储节点之间的桥接现象的半导体装置的电容器的制造方法。解决方案：该方法包括以下步骤：形成层压结构的隔离结构，其中中间层插入到形成有接触插塞的半导体衬底上; 通过蚀刻隔离结构形成用于打开接触塞的一部分的开放区域; 在所述开放区域上形成存储节点32A; 形成图案化的中间层27A，其中隔离结构的一部分被蚀刻并且存储节点32A的一部分被包围; 支持存储节点32A; 去除隔离结构的残留部分; 并且移除图案化的中间层并且暴露存储节点32A的所有内壁和外壁。版权所有（C）2008，JPO＆INPIT

2. 发明专利

JP2007281407A Method for forming zirconium oxide film of tetragonal structure, and method of manufacturing capacitor provided with the film 有权
标题翻译：用于形成四面体结构的氧化锆薄膜的方法以及用薄膜制造电容器的方法
公开(公告)号：JP2007281407A
公开(公告)日：2007-10-25
申请号：JP2006180955
申请日：2006-06-30
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： KIL DEOK-SIN , SO KANSO , YEOM SEUNG-JIN , BOKU KIZEN , RO SAISEI , KIM JIN-HYOCK
IPC分类号： H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45527 , H01L21/31641 , H01L28/40 , Y02T50/67
摘要： PROBLEM TO BE SOLVED: To provide a method of forming a zirconium oxide film having tetragonal structure of high dielectricity constant and stableness at high temperature, and to provide a method of manufacturing a capacitor comprising the film.
SOLUTION: A tetragonal zirconium oxide film is formed on a substrate by repeating a unit cycle in which injection and purging of zirconium source and injection and purging of an oxidant are continuously performed in a unit atom vapor deposition chamber where the substrate is arranged. Otherwise, a unit cycle is repeated which consists of a first cycle in which injection and purging of zirconium source and injection and purging of oxidant are continuously performed in the unit atom vapor deposition chamber, and a second cycle in which injection of the oxidant (EXTRA_O
3 ) and purging are continuously performed. In the unit atom vapor deposition process, the temperature of a substrate, concentration of the oxidant, and exposure condition of the oxidant are adjusted.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种在高温下形成具有高介电常数和稳定性的四边形结构的氧化锆膜的方法，并提供一种制造包含该膜的电容器的方法。解决方案：通过重复单元循环在基板上形成四方晶氧化锆膜，其中在单元原子气相沉积室中连续进行锆源的注入和净化以及氧化剂的注入和净化，其中基板布置。否则，重复单元循环，其包括在单元原子气相沉积室中连续执行锆源的注入和净化以及氧化剂的注入和净化的第一循环，以及其中注入氧化剂（EXTRA_O ＆lt; SB＆gt; 3＆lt; SB＆gt;）并进行清洗。在单位原子气相沉积工艺中，调节衬底的温度，氧化剂的浓度和氧化剂的暴露条件。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007180491A Method of manufacturing capacitor of semiconductor device 有权
标题翻译：制造半导体器件电容器的方法
公开(公告)号：JP2007180491A
公开(公告)日：2007-07-12
申请号：JP2006246826
申请日：2006-09-12
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： YEOM SEUNG JIN , KIL DEOK-SIN , KIM JIN-HYOCK , BOKU KIZEN , SO KANSO , RO SAISEI
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L28/65 , H01L27/10852 , H01L28/91
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a capacitor of semiconductor device which can improve step coverage by shortening the incubation time when forming storage node. SOLUTION: The manufacturing method of the capacitor of the semiconductor device includes the steps of: forming an insulating film 35 over a semiconductor substrate 31 including an interlayer dielectric 32, a storage node contact plug 33, and an etch stop film 34; changing a front surface of the insulating film 35 into a state in which metal substance is easy to absorb by flushing a metal source to the insulating film 35 after having formed a hole 36; forming the storage node of metal system on the flushed insulating film 35; and forming a dielectric film and a plate electrode in order on the storage node of the metal system. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造半导体器件的电容器的方法，其可以通过缩短形成存储节点时的孵育时间来改善步骤覆盖。解决方案：半导体器件的电容器的制造方法包括以下步骤：在包括层间电介质32，存储节点接触插塞33和蚀刻停止膜34的半导体衬底31上形成绝缘膜35; 在形成孔36之后，通过将金属源冲击到绝缘膜35，将绝缘膜35的前表面改变为容易吸收金属物质的状态; 在冲洗绝缘膜35上形成金属系统的存储节点; 并且在金属系统的存储节点上依次形成电介质膜和平板电极。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2009010318A Method of manufacturing capacitor 审中-公开
标题翻译：制造电容器的方法
公开(公告)号：JP2009010318A
公开(公告)日：2009-01-15
申请号：JP2007337412
申请日：2007-12-27
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： LEE KI-JUNG , RO SAISEI , YEOM SEUNG JIN , SO KANSO , KIL DEOK-SIN , KIN EIDAI , KIM JIN-HYOCK , DO KWAN-WOO
IPC分类号： H01L21/8242 , H01L27/108
CPC分类号： H01L28/90 , H01L27/10852
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a capacitor which can prevent leaning phenomenon that may cause a storage node bridge during wet-etching to form a cylindrical storage node structure and drying process.
SOLUTION: The method includes the steps of exposing an upper part of a cylindrical storage node 25 formed on a substrate 21 having a cell region and a peripheral circuit region, forming a mesh type support 26C of amorphous carbon supporting the exposed upper portion of the storage node 25, forming a capping film on the support 26C, opening a peripheral circuit region and removing the capping film in the peripheral circuit region using the mask to cover the cell region, removing the support 26C for the mask and the peripheral circuit region, removing the capping film remaining in the cell region and a sacrificial film remaining in the cell region and the peripheral circuit region, and removing the support remaining in the cell region.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以防止在湿蚀刻期间可能导致存储节点桥接的倾斜现象形成圆柱形存储节点结构和干燥过程的电容器的制造方法。解决方案：该方法包括以下步骤：将形成在具有单元区域和外围电路区域的基板21上的圆柱形存储节点25的上部暴露，形成支撑暴露的上部的非晶碳的网状支撑件26C ，在支撑体26C上形成覆盖膜，打开外围电路区域，并使用掩模移除外围电路区域中的覆盖膜以覆盖电池区域，去除用于掩模和外围电路的支撑件26C 去除残留在单元区域中的封盖膜和残留在单元区域和外围电路区域中的牺牲膜，以及去除残留在单元区域中的载体。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2007073926A Dielectric film and its forming method, and semiconductor memory device equipped with dielectric film and its manufacturing method 审中-公开
标题翻译：电介质膜及其成型方法，以及配备电介质膜的半导体存储器件及其制造方法
公开(公告)号：JP2007073926A
公开(公告)日：2007-03-22
申请号：JP2006129808
申请日：2006-05-09
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： KIL DEOK-SIN , KO KEN , YEOM SEUNG-JIN
IPC分类号： H01L21/8242 , H01L21/316 , H01L21/8247 , H01L27/108 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7881 , H01L21/28273 , H01L29/513
摘要： PROBLEM TO BE SOLVED: To provide a dielectric film and its forming method, and a semiconductor memory device and its manufacturing method, which keep electrostatic capacity and improve leakage current property.
SOLUTION: A dielectric film (50) comprises: a first dielectric film (10) having at least 25 of specific inductive capacity; a second dielectric film (20) formed on the first dielectric film (10) using a substance lower in a modulus of crystallization than that of the first dielectric film (10); and a third dielectric film (30) formed on the second dielectric film (20) using the same substance as that of the first dielectric film (10). The semiconductor memory device comprises: a substrate in which a lower electrode is formed; the dielectric film (50) formed on the lower electrode; and an upper electrode formed on the dielectric film (50).
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种电介质膜及其形成方法以及保持静电容量并提高漏电流性能的半导体存储器件及其制造方法。电介质膜（50）包括：具有至少25的电感率的第一介电膜（10）使用比第一电介质膜（10）的结晶度低的物质形成在第一电介质膜（10）上的第二电介质膜（20）。以及使用与第一电介质膜（10）相同的物质在第二电介质膜（20）上形成的第三电介质膜（30）。半导体存储器件包括：形成下电极的衬底; 形成在下电极上的电介质膜（50）和形成在电介质膜（50）上的上电极。版权所有（C）2007，JPO＆INPIT

6. 发明专利

JP2007013086A Nano-mixed dielectric film, capacitor having the same, and its manufacturing method 审中-公开
标题翻译：纳米混合电介质膜，其电容器及其制造方法
公开(公告)号：JP2007013086A
公开(公告)日：2007-01-18
申请号：JP2006000060
申请日：2006-01-04
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： KIL DEOK-SIN , KO KEN , YEOM SEUNG-JIN
IPC分类号： H01L21/8242 , C23C16/40 , H01L21/316 , H01L27/108
CPC分类号： H01G4/1218 , H01G4/12 , H01G4/1236 , H01G4/206 , H01L28/40 , Y10S977/70 , Y10S977/902
摘要： PROBLEM TO BE SOLVED: To provide a nano-mixed dielectric film that has EOT of 10 Å or less and is excellent in leakage current characteristics, a capacitor have the same, and its manufacturing method.
SOLUTION: The dielectric film of the capacitor is provided with the nano-mixed dielectric film where ZrO
2 and TiO
2 are nano-mixed in a nano-mixed state. The capacitor is provided with a lower electrode, the nano-mixed dielectric film formed by allowing ZrO
2 and TiO
2 to be mixed in a nano-mixed state on the lower electrode, and an upper electrode on the nano-mixed dielectric film. The method for manufacturing the dielectric film of the capacitor includes a step for forming the nano-mixed dielectric film where ZrO
2 and TiO
2 are nano-mixed in a nano-mixed state, by repeating a ZrO
2 deposition cycle and a TiO
2 deposition cycle m times and n times, respectively, using Atomic Layer Deposition; and a step for densifying the nano-mixed dielectric film.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有10埃以下的EOT和漏电流特性优异的纳米混合电介质膜，电容器具有相同的制造方法。解决方案：电容器的电介质膜设置有纳米混合电介质膜，其中ZrO 2 SBB和TiO 2 SBB在纳米混合状态下纳米混合。电容器设有下电极，将纳米混合电介质膜以纳米混合状态混合在下电极上形成，该纳米混合电介质膜通过使ZrO 2 SB 2和/ 和纳米混合电介质膜上的上电极。用于制造电容器的电介质膜的方法包括在纳米混合物中纳米混合形成纳米混合电介质膜的步骤，其中ZrO 2 SB 2和/ 状态，通过使用原子层沉积分别重复ZrO 2 SBS沉积循环和TiO 2 SB 2沉积循环m次和n次; 以及用于使纳米混合电介质膜致密化的步骤。版权所有（C）2007，JPO＆INPIT

7. 发明专利

JP2006310754A Dielectric layer of nano-composite, capacitor having the same, and its manufacturing method 审中-公开
标题翻译：纳米复合材料的电介质层，具有该纳米复合材料的电容器及其制造方法
公开(公告)号：JP2006310754A
公开(公告)日：2006-11-09
申请号：JP2006000062
申请日：2006-01-04
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクターHynix Semiconductor Inc.
发明人： KIL DEOK-SIN , KO KEN
IPC分类号： H01L27/108 , C23C16/40 , C23C16/455 , H01L21/316 , H01L21/8242
CPC分类号： B82Y10/00 , C23C16/405 , C23C16/45531 , H01L21/3142 , H01L27/1085 , H01L28/40
摘要： PROBLEM TO BE SOLVED: To provide the dielectric layer of a nano-composite which is excellent in a leak current characteristic so as to be adopted in different capacitors including a concave structure, and to obtain a high dielectric constant; and to provide the capacitors having the dielectric body, and its manufacturing method.
SOLUTION: The dielectric layer for the capacitor includes the dielectric layer of the nano-composite which is obtained by mixing HfO
2 with the dielectric layer (the dielectric constant to be selected from ZrO
2 , La
2 O
3 , and Ta
2 O
5 is 25-30, and band gap energy is 4.3-7.8), which has a relative permittivity at least the same as that of HfO
2 in the form of the nano-composite. Consequently, an effect is obtained to manufacture the capacitor having the high dielectric constant, while securing the leak current characteristic without the loss of the dielectric constant regardless of a relatively thin thickness.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种纳米复合材料的电介质层，该纳米复合材料具有优异的漏电流特性，以便被应用于包括凹形结构的不同电容器中并获得高介电常数; 并提供具有电介质体的电容器及其制造方法。解决方案：用于电容器的电介质层包括通过将HfO 2 SBB与介电层混合而得到的纳米复合材料的介电层（介电常数选自ZrO 2 ，La 2 3 和Ta 2 5 为25-30，带隙能量为4.3-7.8），其相对介电常数与纳米复合材料形式的HfO 2 至少相同。因此，不管相对薄的厚度如何，都可以获得具有高介电常数的电容器的效果，同时确保泄漏电流特性而不损失介电常数。版权所有（C）2007，JPO＆INPIT

8. 发明专利

DE102005062965A1 未知
公开(公告)号：DE102005062965A1
公开(公告)日：2007-01-11
申请号：DE102005062965
申请日：2005-12-28
申请人： HYNIX SEMICONDUCTOR INC
发明人： KIL DEOK-SIN , HONG KWON , YEOM SEUNG-JIN
IPC分类号： H01L27/108 , H01L21/8242
摘要： A capacitor with a nano-composite dielectric layer and a method for fabricating the same are provided. A dielectric layer of a capacitor includes a nano-composite layer formed by mixing X number of different sub-layers, X being a positive integer greater than approximately 1. A method for forming a dielectric layer of a capacitor includes: forming a nano-composite layer by mixing X number of different sub-layers in the form of a nano-composition, X being a positive integer greater than approximately 1; and densifying the nano-composite layer.

9. 发明专利

DE102004020157A1 Capacitor for semiconductor devices, has lower electrode, upper electrode, and dielectric layer with portion formed by alloying hafnium oxide and aluminum oxide together 未知
公开(公告)号：DE102004020157A1
公开(公告)日：2005-06-23
申请号：DE102004020157
申请日：2004-04-24
申请人： HYNIX SEMICONDUCTOR INC
发明人： KIL DEOK-SIN , ROH JAE-SUNG , SOHN HYUN-CHUL
IPC分类号： H01L21/02 , H01L21/28 , H01L21/314 , C23C16/40 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/08 , H01L27/105 , H01L27/108 , H01L29/76 , H01L31/062
摘要： A capacitor comprises a lower electrode (21), a dielectric layer formed on the lower electrode, and an upper electrode (23) formed on the dielectric layer. A portion of the dielectric layer contacting one of the lower and upper electrodes is formed by alloying hafnium oxide (22B) and aluminum oxide (22A) together. An independent claim is also included for a method of fabricating a capacitor, comprising: forming a lower electrode; forming a dielectric layer alloyed with hafnium oxide and aluminum oxide on the lower electrode; and forming an upper electrode on the dielectric layer.

10. 发明专利

JP2005159271A Capacitor and its manufacturing method 有权
标题翻译：电容器及其制造方法
公开(公告)号：JP2005159271A
公开(公告)日：2005-06-16
申请号：JP2004129856
申请日：2004-04-26
申请人： Hynix Semiconductor Inc , 株式会社ハイニックスセミコンダクター
发明人： KIL DEOK-SIN , RO SAISEI , SOHN HYUN-CHUL
IPC分类号： C23C16/40 , H01L21/02 , H01L21/28 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/08 , H01L27/105 , H01L27/108 , H01L29/76 , H01L31/062
CPC分类号： H01L28/40 , H01L21/02178 , H01L21/02181 , H01L21/02194 , H01L21/022 , H01L21/0228 , H01L21/3141 , H01L21/31616 , H01L21/31645
摘要： PROBLEM TO BE SOLVED: To provide a capacitor which is equipped with a dielectric film having a hafnium oxide and an aluminum oxide, can obtain a characteristic of a high dielectric breakdown voltage in a high voltage applied area, and can prevent a leakage current from increasing caused by the following heat treatment process after forming an upper electrode, and to provide its manufacturing method.
SOLUTION: The capacitor is laminated with a lower electrode 21, a mixed dielectric film 22, and an upper electrode 23 in that order, and is equipped with the mixed dielectric film where the hafnium oxide 22B and the aluminum oxide 22A are mixed, in a portion where the mixed dielectric film 22 is adjacent to the upper electrode 23 or the lower electrode 21.
COPYRIGHT: (C)2005,JPO&NCIPI

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