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1. 发明申请

WO2010017123A2 METHODS FOR FORMING DOPED REGIONS IN A SEMICONDUCTOR MATERIAL 审中-公开
标题翻译：在半导体材料中形成掺杂区域的方法
公开(公告)号：WO2010017123A2
公开(公告)日：2010-02-11
申请号：PCT/US2009052546
申请日：2009-08-03
申请人： HONEYWELL INT INC , LEUNG ROGER YU-KWAN , ZHOU DE-LING , FAN WENYA
发明人： LEUNG ROGER YU-KWAN , ZHOU DE-LING , FAN WENYA
IPC分类号： H01L21/265
CPC分类号： H01L21/228 , H01L31/0288 , H01L31/068 , H01L31/0682 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Methods for forming doped regions in a semiconductor material that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material and methods for fabricating semiconductor devices that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material are provided. In one exemplary embodiment, a method for forming doped regions in a semiconductor material comprises depositing a conductivity-determining type dopant comprising a dopant element overlying a first portion of the semiconductor material. A diffusion barrier material is applied such that it overlies a second portion of the semiconductor material. The dopant element of the conductivity-determining type dopant is diffused into the first portion of the semiconductor material.
摘要翻译：在掺杂剂元素和/或掺杂剂从沉积的掺杂剂和/或半导体材料中最小化或消除蒸汽扩散的半导体材料中形成掺杂区域的方法以及用于制造半导体器件的方法，该半导体器件最小化或消除掺杂元素的蒸气扩散和/或来自沉积的掺杂剂和/或半导体材料的掺杂剂。在一个示例性实施例中，用于在半导体材料中形成掺杂区域的方法包括沉积包含覆盖半导体材料的第一部分的掺杂剂元素的导电率确定型掺杂剂。施加扩散阻挡材料，使其覆盖半导体材料的第二部分。导电性确定型掺杂剂的掺杂剂元素扩散到半导体材料的第一部分。

2. 发明申请

WO2004068555A3 REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS 审中-公开
标题翻译：损坏的电介质材料和膜的修复和恢复
公开(公告)号：WO2004068555A3
公开(公告)日：2005-02-03
申请号：PCT/US2004002252
申请日：2004-01-26
申请人： HONEYWELL INT INC , FAN WENYA , LU VICTOR , THOMAS MICHAEL , DANIELS BRIAN , NGUYEN TIFFANY , ZHOU DE-LING , NAMAN ANANTH , JIN LEI , BHANAP ANIL
发明人： FAN WENYA , LU VICTOR , THOMAS MICHAEL , DANIELS BRIAN , NGUYEN TIFFANY , ZHOU DE-LING , NAMAN ANANTH , JIN LEI , BHANAP ANIL
IPC分类号： H01L21/312 , H01L21/47 , H01L21/76
CPC分类号： H01L21/31058 , H01L21/3105 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.
摘要翻译：本文描述了修复材料中空隙的方法，其包括：a）提供具有多个反应性硅烷醇基团的材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。还描述了材料中碳修复的方法，其包括：a）提供具有多个反应性硅烷醇基团的缺碳材料; b）提供至少一种反应性表面改性剂; 和c）使所述多个反应性硅烷醇基团中的至少一些与至少一种反应性表面改性剂化学封端。此外，本文描述了用于减少膜和/或缺碳膜的冷凝的方法，其包括：a）提供具有多个反应性硅烷醇基团的膜; b）将膜放入等离子体室中; c）将多个含反应性有机部分的硅烷引入所述室中; 和d）允许硅烷与至少一些反应性硅烷醇基团反应。介质材料和低k介电材料在本文中描述，其包括：a）具有多个硅原子的无机材料; 和b）多个含有机部分的硅烷化合物，其中硅烷化合物通过至少一些硅原子与无机材料偶联。

3. 发明申请

WO2008147825A4 THERMAL INTERCONNECT AND INTERFACE MATERIALS, METHODS OF PRODUCTION AND USES THEREOF 审中-公开
标题翻译：热互连和界面材料，生产方法及其用途
公开(公告)号：WO2008147825A4
公开(公告)日：2009-05-07
申请号：PCT/US2008064422
申请日：2008-05-21
申请人： HONEYWELL INT INC , WEISER MARTIN , BURNHAM KIKUE , ZHOU DE-LING , LEUNG ROGER , NEDBAL JAN , RASTOGI RAVI
发明人： WEISER MARTIN , BURNHAM KIKUE , ZHOU DE-LING , LEUNG ROGER , NEDBAL JAN , RASTOGI RAVI
IPC分类号： H01L23/373 , C09K5/14
CPC分类号： C09K5/14 , H01L23/3737 , H01L23/42 , H01L2224/2929 , H01L2224/293 , H01L2224/32245 , H01L2924/09701 , H01L2924/12044 , H01L2924/3011 , H01L2924/0665 , H01L2924/00
摘要： Thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent improves the thermal performance, compatibility, physical quality or a combination thereof of the thermal interface material. Methods of forming thermal interface materials are also disclosed that include providing each of the at least one matrix material component, at least one high conductivity filler, at least one solder material and at least one material modification agent, blending the components; and optionally curing the components pre- or post-application of the thermal interface material to the surface, substrate or component. Also, thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent at least one modified thermal filler profile.
摘要翻译：公开了热界面材料，其包括至少一种基质材料组分，至少一种高电导率填料组分，至少一种焊料材料; 和至少一种材料改性剂，其中所述至少一种材料改性剂改善所述热界面材料的热性能，相容性，物理质量或其组合。还公开了形成热界面材料的方法，其包括提供至少一种基质材料组分，至少一种高电导率填料，至少一种焊料材料和至少一种材料改性剂中的每一种，混合组分; 并且可选地将热界面材料预施加或后施加到表面，基材或组分上固化。此外，公开了热界面材料，其包括至少一种基体材料组分，至少一种高电导率填料组分，至少一种焊料材料; 和至少一种材料改性剂，其中所述至少一种材料改性剂至少一种改性的热填料型材。

4. 发明申请

WO2008147825A3 THERMAL INTERCONNECT AND INTERFACE MATERIALS, METHODS OF PRODUCTION AND USES THEREOF 审中-公开
标题翻译：热互连和界面材料，其制造方法和用途
公开(公告)号：WO2008147825A3
公开(公告)日：2009-03-05
申请号：PCT/US2008064422
申请日：2008-05-21
申请人： HONEYWELL INT INC , WEISER MARTIN , BURNHAM KIKUE , ZHOU DE-LING , LEUNG ROGER , NEDBAL JAN , RASTOGI RAVI
发明人： WEISER MARTIN , BURNHAM KIKUE , ZHOU DE-LING , LEUNG ROGER , NEDBAL JAN , RASTOGI RAVI
IPC分类号： H01L23/373 , C09K5/14
CPC分类号： C09K5/14 , H01L23/3737 , H01L23/42 , H01L2224/2929 , H01L2224/293 , H01L2224/32245 , H01L2924/09701 , H01L2924/12044 , H01L2924/3011 , H01L2924/0665 , H01L2924/00
摘要： Thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent improves the thermal performance, compatibility, physical quality or a combination thereof of the thermal interface material. Methods of forming thermal interface materials are also disclosed that include providing each of the at least one matrix material component, at least one high conductivity filler, at least one solder material and at least one material modification agent, blending the components; and optionally curing the components pre- or post-application of the thermal interface material to the surface, substrate or component. Also, thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent at least one modified thermal filler profile.
摘要翻译：公开了热界面材料，其包括至少一种基体材料组分，至少一种高导电性填料组分，至少一种焊料材料; 和至少一种材料改性剂，其中所述至少一种材料改性剂改善热界面材料的热性能，相容性，物理质量或其组合。还公开了形成热界面材料的方法，其包括提供至少一种基体材料组分，至少一种高导电性填料，至少一种焊料材料和至少一种材料改性剂中的每一种，混合所述组分; 并且可选地在将热界面材料施加到表面，基底或部件之前或之后固化部件。而且，公开了包括至少一种基体材料组分，至少一种高导电性填料组分，至少一种焊料材料的热界面材料; 和至少一种材料改性剂，其中所述至少一种材料改性剂具有至少一种改性的热量填充材料。

5. 发明申请

WO2004041972A3 GAS LAYER FORMATION MATERIALS 审中-公开
标题翻译：气体层形成材料
公开(公告)号：WO2004041972A3
公开(公告)日：2004-07-15
申请号：PCT/US0334816
申请日：2003-10-31
申请人： HONEYWELL INT INC , LI BO , ZHOU DE-LING , NAMAN ANANTH , APEN PAUL
发明人： LI BO , ZHOU DE-LING , NAMAN ANANTH , APEN PAUL
IPC分类号： C08G61/02 , C08L65/00 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01B3/30 , H01L21/47 , H01L21/4763
CPC分类号： H01L21/76829 , C08G61/02 , C08L65/00 , H01L21/312 , H01L21/3121 , H01L21/31695 , H01L21/76801 , H01L21/76808 , H01L21/7682 , H01L23/5222 , H01L23/5329 , H01L2221/1036 , H01L2924/0002 , H01L2924/09701 , H01L2924/12044 , H01L2924/00
摘要： The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers (72) are used in microchips and multichip modules.
摘要翻译：本发明提供选自苊烯均聚物的气层形成材料; 苊烯共聚物; 聚（亚芳基醚）; 聚酰胺; B阶多功能丙烯酸酯/甲基丙烯酸酯; 交联苯乙烯二乙烯基苯聚合物; 苯乙烯和二乙烯基苯与马来酰亚胺或双马来酰亚胺的共聚物。形成的气体层（72）用于微芯片和多芯片模块。

6. 发明申请

WO2005043250B1 PROCESS FOR THE USE OF BIS-CHOLINE AND TRIS-CHOLINE IN THE CLEANING OF QUARTZ-COATED POLYSILICON AND OTHER MATERIALS 审中-公开
标题翻译：使用双 - 胆碱和三 - 胆碱清洁石英涂覆的多硅氧烷及其他材料的方法
公开(公告)号：WO2005043250B1
公开(公告)日：2005-10-20
申请号：PCT/US2004035148
申请日：2004-10-22
申请人： EKC TECHNOLOGY INC , CHARM RICHARD WILLIAM , ZHOU DE-LING , SMALL ROBERT J , LEE SHIHYING
发明人： CHARM RICHARD WILLIAM , ZHOU DE-LING , SMALL ROBERT J , LEE SHIHYING
IPC分类号： C11D7/32 , C11D7/34 , C11D11/00 , G03F7/42
CPC分类号： G03F7/425 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/426
摘要： A new cleaning chemistry based on bis-choline and tris-choline compounds, such as their hydroxides, is provided in order to address the removal of photoresist and flux while minimizing any etching of the substrate.
摘要翻译：提供基于双胆碱和三 - 胆碱化合物（例如它们的氢氧化物）的新的清洁化学物质以解决光刻胶和通量的去除，同时最小化衬底的任何蚀刻。

7. 发明申请

WO2005043250A3 PROCESS FOR THE USE OF BIS-CHOLINE AND TRIS-CHOLINE IN THE CLEANING OF QUARTZ-COATED POLYSILICON AND OTHER MATERIALS 审中-公开
公开(公告)号：WO2005043250A3
公开(公告)日：2005-08-11
申请号：PCT/US2004035148
申请日：2004-10-22
申请人： EKC TECHNOLOGY INC , CHARM RICHARD WILLIAM , ZHOU DE-LING , SMALL ROBERT J , LEE SHIHYING
发明人： CHARM RICHARD WILLIAM , ZHOU DE-LING , SMALL ROBERT J , LEE SHIHYING
IPC分类号： C11D7/32 , C11D7/34 , C11D11/00 , G03F7/42
CPC分类号： G03F7/425 , C11D7/3218 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/426
摘要： A new cleaning chemistry based on bis-choline and tris-choline compounds, such as their hydroxides, is provided in order to address the removal of photoresist and flux while minimizing any etching of the substrate.

8. 发明公开

EP1588411A4 REPAIR AND RESTORATION OF DAMAGED DIELECTRIC MATERIALS AND FILMS 审中-公开
标题翻译：修复和受损DIELEKTRISCHERMATERIALIEN和电影恢复
公开(公告)号：EP1588411A4
公开(公告)日：2008-10-01
申请号：EP04705341
申请日：2004-01-26
申请人： HONEYWELL INT INC
发明人： FAN WENYA , LU VICTOR , THOMAS MICHAEL , DANIELS BRIAN , NGUYEN TIFFANY , ZHOU DE-LING , NAMAN ANANTH , JIN LEI , BHANAP ANIL
IPC分类号： H01L21/312 , H01L21/3105 , H01L21/768
CPC分类号： H01L21/31058 , H01L21/3105 , H01L21/76801 , H01L2924/0002 , H01L2924/00
摘要： Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. In addition, methods are described herein for reducing the condensation of a film and/or a carbon-deficient film that include: a) providing a film having a plurality of reactive silanol groups; b) placing the film into a plasma chamber; c) introducing a plurality of reactive organic moieties-containing silanes into the chamber; and d) allowing the silanes to react with at least some of the reactive silanol groups. Dielectric materials and low-k dielectric materials are described herein that comprise: a) an inorganic material having a plurality of silicon atoms; and b) a plurality of organic moiety-containing silane compounds, wherein the silane compounds are coupled to the inorganic material through at least some of the silicon atoms.

9. 发明专利

AU2003295370A8 Gas layer formation materials 未知
公开(公告)号：AU2003295370A8
公开(公告)日：2004-06-07
申请号：AU2003295370
申请日：2003-10-31
申请人： HONEYWELL INT INC
发明人： ZHOU DE-LING , NAMAN ANANTH , APEN PAUL , LI BO
IPC分类号： C08G61/02 , C08L65/00 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01B3/30 , H01L21/47 , H01L21/4763
摘要： The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

10. 发明专利

AU2003295370A1 GAS LAYER FORMATION MATERIALS 未知
公开(公告)号：AU2003295370A1
公开(公告)日：2004-06-07
申请号：AU2003295370
申请日：2003-10-31
申请人： HONEYWELL INT INC
发明人： LI BO , ZHOU DE-LING , NAMAN ANANTH , APEN PAUL
IPC分类号： C08G61/02 , C08L65/00 , H01L21/312 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532
摘要： The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

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