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1. 发明申请

WO2005021828A2 PVD TARGETS COMPRISING COPPER IN TERNARY MIXTURES, AND METHODS OF FORMING COPPER-CONTAINING PVD TARGETS 审中-公开
标题翻译：在三元混合物中包含铜的PVD目标和形成含铜PVD靶材的方法
公开(公告)号：WO2005021828A2
公开(公告)日：2005-03-10
申请号：PCT/US2004027090
申请日：2004-08-20
申请人： HONEYWELL INT INC , DANIELS BRIAN J , HAUSMAN CHRISTIE J , HUTCHISON CARA L , LEE EAL H , YI WUWEN , STROTHERS SUSAN D , PINTER MICHAEL R , THOMAS MICHAEL E
发明人： DANIELS BRIAN J , HAUSMAN CHRISTIE J , HUTCHISON CARA L , LEE EAL H , YI WUWEN , STROTHERS SUSAN D , PINTER MICHAEL R , THOMAS MICHAEL E
IPC分类号： C23C14/16 , C23C14/34 , H01L21/285 , H01L21/768 , H01L23/532 , C23C14/14 , C23C14/32
CPC分类号： C23C14/3414 , B32B15/012 , C23C14/16 , C23C14/185 , C23C14/3407 , H01L21/2855 , H01L21/76841 , H01L21/76843 , H01L21/76871 , H01L21/76877 , H01L23/53233 , H01L2924/0002 , H01L2924/00
摘要： The invention includes a physical vapor deposition target containing copper and at least two additional elements selected from Ag, Al, As, Au, B, Be, Ca, Cd, Co, Cr, Fe, Ga, Ge, Hf, Hg, In, Ir, Li, Mg, Mn, Nb, Ni, Pb, Pd, Pt, Sb, Sc, Si, Sn, Ta, Te, Ti, V, W, Zn and Zr, a total amount of the at least two additional elements being from 100 ppm to 10 atomic %. The invention additionally includes thin films and interconnects which contain the mixture of copper and at least two added elements. The invention also includes forming a copper-containing target. A mixture of copper and two or more elements is formed. The mixture is cast by melting and is subsequently cooled to form a billet which is worked utilizing one or both of equal channel angular extrusion and thermornechanical processing to form a target.
摘要翻译：本发明包括含有铜和至少两种选自Ag，Al，As，Au，B，Be，Ca，Cd，Co，Cr，Fe，Ga，Ge，Hf，Hg，In， Ir，Li，Mg，Mn，Nb，Ni，Pb，Pd，Pt，Sb，Sc，Si，Sn，Ta，Te，Ti，V，W，Zn和Zr中的至少两种添加元素为100〜10原子％。本发明还包括含有铜和至少两种添加元素的混合物的薄膜和互连。本发明还包括形成含铜靶。形成铜和两种或更多种元素的混合物。混合物通过熔化铸造并随后冷却以形成坯料，其使用等通道角挤压和热机械加工中的一种或两种来形成靶。

2. 发明申请

WO2008091731A3 TARGET DESIGNS AND RELATED METHODS FOR REDUCED EDDY CURRENTS, INCREASED RESISTANCE AND RESISTIVITY, AND ENHANCED COOLING 审中-公开
标题翻译：减少涡流的目标设计和相关方法，提高了电阻和电阻率，并增强了冷却
公开(公告)号：WO2008091731A3
公开(公告)日：2008-11-13
申请号：PCT/US2008050482
申请日：2008-01-08
申请人： HONEYWELL INT INC , LEE EAL H , HORT WERNER , KARDOKUS JANINE K , STROTHERS SUSAN D , KIM JAEYEON
发明人： LEE EAL H , HORT WERNER , KARDOKUS JANINE K , STROTHERS SUSAN D , KIM JAEYEON
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , H01J37/3426 , H01J37/3491 , Y10T29/49826
摘要： A sputtering target is described herein that comprises: a) a target surface component comprising a target material; b) a core backing component having a coupling surface and a back surface, wherein the coupling surface is coupled to the target surface component; and c) at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component. Methods of forming a sputtering target are also described that comprises: a) providing a target surface component comprising a surface material; b) providing a core backing component comprising a backing material and having a coupling surface and a back surface; c) providing at least one surface area feature coupled to or located in the back surface of the core backing component, wherein the surface area feature increases the resistance, resistivity or a combination thereof of the core backing component; and d) coupling the surface target material to the coupling surface of the core backing material.
摘要翻译：本文描述了溅射靶，其包括：a）包含靶材料的靶表面组分; b）具有耦合表面和后表面的芯背衬部件，其中耦合表面耦合到目标表面部件; 以及c）至少一个表面区域特征，所述至少一个表面区域特征耦合到或位于所述芯背衬组件的所述背表面中，其中所述表面区域特征增加所述芯背衬组件的电阻，电阻率或其组合。还描述了形成溅射靶的方法，其包括：a）提供包含表面材料的靶表面组分; b）提供包括背衬材料并具有耦合表面和背表面的芯背衬部件; c）提供至少一个表面区域特征，所述至少一个表面区域特征耦合到或位于所述芯背衬组件的所述背表面中，其中所述表面区域特征增加所述芯背衬组件的电阻，电阻率或其组合; 和d）将表面靶材料耦合到芯背衬材料的耦合表面。

3. 发明申请

WO03063243B1 THIN FILMS, STRUCTURES HAVING THIN FILMS, AND METHODS OF FORMING THIN FILMS 审中-公开
标题翻译：薄膜，具有薄膜的结构和形成薄膜的方法
公开(公告)号：WO03063243B1
公开(公告)日：2003-10-09
申请号：PCT/US0302106
申请日：2003-01-24
申请人： HONEYWELL INT INC , LEE EAL H , THOMAS MICHAEL E
发明人： LEE EAL H , THOMAS MICHAEL E
IPC分类号： C23C14/06 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/52 , H01L23/532 , H01L29/40 , H01L21/44
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The invention described herein relates to new titanium-comprising materials which can be utilized for forming titanium alloy barrier layers for Cu applications. Titanium alloy sputtering targets can be reactively sputtered in a nitrogen-comprising sputtering gas atmosphere to from titanium alloy nitride film, or alternatively in a nitrogen-comprising and oxygen-comprising atmosphere to form titanium alloy oxygen nitrogen thin film. The thin films formed in accordance with the present invention can contain a non-columnar grain structure, low electrical resistivity, high chemical stability, and barrier layer properties comparable or exceeding those of TaN.
摘要翻译：本文所述的发明涉及可用于形成用于Cu应用的钛合金阻挡层的新的含钛材料。钛合金溅射靶可以在含氮溅射气体气氛中从钛合金氮化膜或者在含氮和含氧气氛中反应溅射形成钛合金氧氮薄膜。根据本发明形成的薄膜可以包含与TaN相当或超过TaN的非柱状晶粒结构，低电阻率，高化学稳定性和阻挡层性质。

4. 发明申请

WO03063243A8 THIN FILMS, STRUCTURES HAVING THIN FILMS, AND METHODS OF FORMING THIN FILMS 审中-公开
标题翻译：薄膜，具有薄膜的结构以及形成薄膜的方法
公开(公告)号：WO03063243A8
公开(公告)日：2003-12-04
申请号：PCT/US0302106
申请日：2003-01-24
申请人： HONEYWELL INT INC , LEE EAL H , THOMAS MICHAEL E
发明人： LEE EAL H , THOMAS MICHAEL E
IPC分类号： C23C14/06 , H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/4763 , H01L21/768 , H01L23/48 , H01L23/52 , H01L23/532 , H01L29/40 , H01L21/44
CPC分类号： H01L21/76846 , H01L21/2855 , H01L21/76864 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： The invention described herein relates to new titanium-comprising materials which can be utilized for forming titanium alloy barrier layers for Cu applications. Titanium alloy sputtering targets can be reactively sputtered in a nitrogen-comprising sputtering gas atmosphere to from titanium alloy nitride film, or alternatively in a nitrogen-comprising and oxygen-comprising atmosphere to form titanium alloy oxygen nitrogen thin film. The thin films formed in accordance with the present invention can contain a non-columnar grain structure, low electrical resistivity, high chemical stability, and barrier layer properties comparable or exceeding those of TaN.
摘要翻译：本文所述的发明涉及可用于形成用于Cu应用的钛合金阻挡层的新的含钛材料。钛合金溅射靶可以在含氮溅射气体气氛中反应溅射以从钛合金氮化物膜中或者在含氮和含氧的气氛中反应溅射以形成钛合金氧氮薄膜。根据本发明形成的薄膜可以包含非柱状晶粒结构，低电阻率，高化学稳定性和与TaN相当或超过的阻挡层性能。

5. 发明申请

WO2004032184A2 LOW TEMPERATURE SALICIDE FORMING MATERIALS AND SPUTTERING TARGETS FORMED THEREFROM 审中-公开
标题翻译：低温杀菌剂形成材料和溅射目标
公开(公告)号：WO2004032184A2
公开(公告)日：2004-04-15
申请号：PCT/US0324968
申请日：2003-08-06
申请人： HONEYWELL INT INC , THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
发明人： THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
IPC分类号： C23C14/14 , C23C14/34 , H01L
CPC分类号： C23C14/3414 , C23C14/14
摘要： Metal-based precursor materials as described herein have an overall Curie temperature and include: a) a first material constituent having a first Curie temperature component; and b) at least one additional material constituent having a second Curie temperature component, wherein the overall Curie temperature is lower than the first Curie temperature component. Methods are also described of forming a metal-based salicide precursor material having an overall Curie temperature including: a) providing a first material constituent having a first Curie temperature component; b) providing at least one additional material constituent having a second Curie temperature component; and c) combining the first material constituent and the at least one additional material constituent such that the overall Curie temperature is lower than the first Curie temperature.
摘要翻译：本文所述的基于金属的前体材料具有总体居里温度，并且包括：a）具有第一居里温度分量的第一材料成分; 和b）具有第二居里温度分量的至少一种另外的材料成分，其中总体居里温度低于第一居里温度分量。还描述了形成总体居里温度的基于金属的自对准硅化物前体材料的方法，包括：a）提供具有第一居里温度分量的第一材料成分; b）提供具有第二居里温度分量的至少一种另外的材料成分; 以及c）将所述第一材料成分和所述至少一种附加材料成分相结合，使得居里温度的总体温度低于第一居里温度。

6. 发明申请

WO2009151767A3 DESIGN AND USE OF DC MAGNETRON SPUTTERING SYSTEMS 审中-公开
标题翻译：直流磁控溅射系统的设计与使用
公开(公告)号：WO2009151767A3
公开(公告)日：2010-02-25
申请号：PCT/US2009040455
申请日：2009-04-14
申请人： HONEYWELL INT INC , LEE EAL H , KIM JAEYEON
发明人： LEE EAL H , KIM JAEYEON
IPC分类号： H01L21/203
CPC分类号： C23C14/3407 , C23C14/35 , C23C14/564 , H01J37/3408 , H01J37/3426 , H01J37/3429 , H01J37/3435 , H01J37/3441
摘要： Field-enhanced sputtering targets are disclosed that include: a core material; and a surface material, wherein at least one of the core material or the surface material has a field strength design profile and wherein the sputtering target comprises a substantially uniform erosion profile. Target assembly systems are also disclosed that include a field-enhanced sputtering target; and an anodic shield. Additionally, methods of producing a substantially uniform erosion on a sputtering target are described that include: providing an anodic shield; providing a cathodic field-enhanced target; and initiating a plasma ignition arc, whereby the arc is located at the point of least resistance between the anodic shield and the cathodic field-enhanced target.
摘要翻译：公开了场增强溅射靶，其包括：芯材料; 和表面材料，其中所述芯材料或表面材料中的至少一个具有场强设计曲线，并且其中所述溅射靶包括基本均匀的侵蚀曲线。还公开了包括场增强溅射靶的目标组装系统; 和阳极屏蔽。此外，描述了在溅射靶上产生基本均匀的侵蚀的方法，其包括：提供阳极屏蔽; 提供阴极场增强目标; 并启动等离子体点火电弧，由此电弧位于阳极屏蔽和阴极场增强靶之间的最小电阻点。

7. 发明申请

WO2004032184B1 LOW TEMPERATURE SALICIDE FORMING MATERIALS AND SPUTTERING TARGETS FORMED THEREFROM 审中-公开
标题翻译：低温杀菌剂形成材料和溅射目标
公开(公告)号：WO2004032184B1
公开(公告)日：2005-01-27
申请号：PCT/US0324968
申请日：2003-08-06
申请人： HONEYWELL INT INC , THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
发明人： THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
IPC分类号： C23C14/14 , C23C14/34 , C22C19/03 , C22C19/07 , C22C22/00
CPC分类号： C23C14/3414 , C23C14/14
摘要： Metal-based precursor materials as described herein have an overall Curie temperature and include: a) a first material constituent having a first Curie temperature component; and b) at least one additional material constituent having a second Curie temperature component, wherein the overall Curie temperature is lower than the first Curie temperature component. Methods are also described of forming a metal-based salicide precursor material having an overall Curie temperature including: a) providing a first material constituent having a first Curie temperature component; b) providing at least one additional material constituent having a second Curie temperature component; and c) combining the first material constituent and the at least one additional material constituent such that the overall Curie temperature is lower than the first Curie temperature.
摘要翻译：本文所述的基于金属的前体材料具有总体居里温度，并且包括：a）具有第一居里温度分量的第一材料成分; 和b）具有第二居里温度分量的至少一种另外的材料成分，其中总居里温度低于第一居里温度分量。还描述了形成总体居里温度的基于金属的自对准硅化物前体材料的方法，包括：a）提供具有第一居里温度分量的第一材料成分; b）提供具有第二居里温度分量的至少一种另外的材料成分; 以及c）将所述第一材料成分和所述至少一种另外的材料成分相结合，使得总的居里温度低于第一居里温度。

8. 发明申请

WO2004032184A9 LOW TEMPERATURE SALICIDE FORMING MATERIALS AND SPUTTERING TARGETS FORMED THEREFROM 审中-公开
公开(公告)号：WO2004032184A9
公开(公告)日：2004-10-21
申请号：PCT/US0324968
申请日：2003-08-06
申请人： HONEYWELL INT INC , THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
发明人： THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
IPC分类号： C23C14/14 , C23C14/34 , C22C19/03 , C22C19/07 , C22C22/00
CPC分类号： C23C14/3414 , C23C14/14
摘要： Metal-based precursor materials as described herein have an overall Curie temperature and include: a) a first material constituent having a first Curie temperature component; and b) at least one additional material constituent having a second Curie temperature component, wherein the overall Curie temperature is lower than the first Curie temperature component. Methods are also described of forming a metal-based salicide precursor material having an overall Curie temperature including: a) providing a first material constituent having a first Curie temperature component; b) providing at least one additional material constituent having a second Curie temperature component; and c) combining the first material constituent and the at least one additional material constituent such that the overall Curie temperature is lower than the first Curie temperature.

9. 发明申请

WO2004033743B1 HOMOGENOUS SOLID SOLUTION ALLOYS FOR SPUTTER-DEPOSITED THIN FILMS 审中-公开
公开(公告)号：WO2004033743B1
公开(公告)日：2004-12-23
申请号：PCT/US0330731
申请日：2003-09-26
申请人： HONEYWELL INT INC
发明人： THOMAS MICHAEL E , LEE EAL H
IPC分类号： C23C14/34 , C25C1/06 , C25C1/22
CPC分类号： C23C14/3414
摘要： The invention includes a sputtering component comprising a sputtering surface. At least 99 atomic % of the sputtering surface consists of a single phase corresponding to a solid solution of two or more elements in elemental form. Additionally, an entire volume of the sputtering component can consist of the single phase corresponding to the solid solution of the two or more elements in elemental form. The invention encompasses methods of forming mixedmetal materials utilizing one or more of a reduction process, electrolysis process and iodide process.

10. 发明申请

WO2004033743A2 HOMOGENOUS SOLID SOLUTION ALLOYS FOR SPUTTER-DEPOSITED THIN FILMS 审中-公开
标题翻译：用于溅射沉积薄膜的均匀固溶体合金
公开(公告)号：WO2004033743A2
公开(公告)日：2004-04-22
申请号：PCT/US0330731
申请日：2003-09-26
申请人： HONEYWELL INT INC
发明人： THOMAS MICHAEL E , LEE EAL H
IPC分类号： C23C14/34 , C23C
CPC分类号： C23C14/3414
摘要： The invention includes a sputtering component comprising a sputtering surface. At least 99 atomic % of the sputtering surface consists of a single phase corresponding to a solid solution of two or more elements in elemental form. Additionally, an entire volume of the sputtering component can consist of the single phase corresponding to the solid solution of the two or more elements in elemental form. The invention encompasses methods of forming mixedmetal materials utilizing one or more of a reduction process, electrolysis process and iodide process.
摘要翻译：本发明包括一种包括溅射表面的溅射部件。至少99原子％的溅射表面由对应于两种或多种元素形式的固溶体的单相组成。另外，整个体积的溅射组分可以由对应于元素形式的两种或更多种元素的固溶体的单相组成。本发明包括利用还原过程，电解过程和碘化物过程中的一种或多种来形成混合金属材料的方法。

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