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1. 发明申请

WO2004032184A2 LOW TEMPERATURE SALICIDE FORMING MATERIALS AND SPUTTERING TARGETS FORMED THEREFROM 审中-公开
标题翻译：低温杀菌剂形成材料和溅射目标
公开(公告)号：WO2004032184A2
公开(公告)日：2004-04-15
申请号：PCT/US0324968
申请日：2003-08-06
申请人： HONEYWELL INT INC , THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
发明人： THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
IPC分类号： C23C14/14 , C23C14/34 , H01L
CPC分类号： C23C14/3414 , C23C14/14
摘要： Metal-based precursor materials as described herein have an overall Curie temperature and include: a) a first material constituent having a first Curie temperature component; and b) at least one additional material constituent having a second Curie temperature component, wherein the overall Curie temperature is lower than the first Curie temperature component. Methods are also described of forming a metal-based salicide precursor material having an overall Curie temperature including: a) providing a first material constituent having a first Curie temperature component; b) providing at least one additional material constituent having a second Curie temperature component; and c) combining the first material constituent and the at least one additional material constituent such that the overall Curie temperature is lower than the first Curie temperature.
摘要翻译：本文所述的基于金属的前体材料具有总体居里温度，并且包括：a）具有第一居里温度分量的第一材料成分; 和b）具有第二居里温度分量的至少一种另外的材料成分，其中总体居里温度低于第一居里温度分量。还描述了形成总体居里温度的基于金属的自对准硅化物前体材料的方法，包括：a）提供具有第一居里温度分量的第一材料成分; b）提供具有第二居里温度分量的至少一种另外的材料成分; 以及c）将所述第一材料成分和所述至少一种附加材料成分相结合，使得居里温度的总体温度低于第一居里温度。

2. 发明申请

WO2004032184B1 LOW TEMPERATURE SALICIDE FORMING MATERIALS AND SPUTTERING TARGETS FORMED THEREFROM 审中-公开
标题翻译：低温杀菌剂形成材料和溅射目标
公开(公告)号：WO2004032184B1
公开(公告)日：2005-01-27
申请号：PCT/US0324968
申请日：2003-08-06
申请人： HONEYWELL INT INC , THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
发明人： THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
IPC分类号： C23C14/14 , C23C14/34 , C22C19/03 , C22C19/07 , C22C22/00
CPC分类号： C23C14/3414 , C23C14/14
摘要： Metal-based precursor materials as described herein have an overall Curie temperature and include: a) a first material constituent having a first Curie temperature component; and b) at least one additional material constituent having a second Curie temperature component, wherein the overall Curie temperature is lower than the first Curie temperature component. Methods are also described of forming a metal-based salicide precursor material having an overall Curie temperature including: a) providing a first material constituent having a first Curie temperature component; b) providing at least one additional material constituent having a second Curie temperature component; and c) combining the first material constituent and the at least one additional material constituent such that the overall Curie temperature is lower than the first Curie temperature.
摘要翻译：本文所述的基于金属的前体材料具有总体居里温度，并且包括：a）具有第一居里温度分量的第一材料成分; 和b）具有第二居里温度分量的至少一种另外的材料成分，其中总居里温度低于第一居里温度分量。还描述了形成总体居里温度的基于金属的自对准硅化物前体材料的方法，包括：a）提供具有第一居里温度分量的第一材料成分; b）提供具有第二居里温度分量的至少一种另外的材料成分; 以及c）将所述第一材料成分和所述至少一种另外的材料成分相结合，使得总的居里温度低于第一居里温度。

3. 发明申请

WO2004032184A9 LOW TEMPERATURE SALICIDE FORMING MATERIALS AND SPUTTERING TARGETS FORMED THEREFROM 审中-公开
公开(公告)号：WO2004032184A9
公开(公告)日：2004-10-21
申请号：PCT/US0324968
申请日：2003-08-06
申请人： HONEYWELL INT INC , THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
发明人： THOMAS MICHAEL A , DANIELS BRIAN , TURNER STEPHEN P , LEE EAL H
IPC分类号： C23C14/14 , C23C14/34 , C22C19/03 , C22C19/07 , C22C22/00
CPC分类号： C23C14/3414 , C23C14/14
摘要： Metal-based precursor materials as described herein have an overall Curie temperature and include: a) a first material constituent having a first Curie temperature component; and b) at least one additional material constituent having a second Curie temperature component, wherein the overall Curie temperature is lower than the first Curie temperature component. Methods are also described of forming a metal-based salicide precursor material having an overall Curie temperature including: a) providing a first material constituent having a first Curie temperature component; b) providing at least one additional material constituent having a second Curie temperature component; and c) combining the first material constituent and the at least one additional material constituent such that the overall Curie temperature is lower than the first Curie temperature.

4. 发明申请

WO2005049876A3 HIGH-PURITY TITANIUM-NICKEL ALLOYS WITH SHAPE MEMORY 审中-公开
标题翻译：具有形状记忆的高纯钛镍合金
公开(公告)号：WO2005049876A3
公开(公告)日：2005-08-04
申请号：PCT/US2004034972
申请日：2004-10-22
申请人： HONEYWELL INT INC , LOVE DAVID B , TURNER STEPHEN P , XU YUN
发明人： LOVE DAVID B , TURNER STEPHEN P , XU YUN
IPC分类号： C22C14/00 , C22C19/03
CPC分类号： C22C19/03 , C22F1/006
摘要： The invention includes an alloy containing equivalent amounts of nickel and titanium. The alloy has shape memory and a metallic purity of at least about 99.995%, and comprises less than about 200 ppm of gases. The invention also includes an alloy comprising titanium and nickel where the titanium and nickel amounts are non-equivalent. The alloy has shape memory and has a metallic purity of at least 99.995%, and contains less than about 200 ppm of gases. The invention further includes a method of producing a shape memory alloy. Titanium is provided having a metallic purity of at least 99.999% and nickel is provided having a metallic purity of at least 99.99%. The titanium and nickel are combined utilizing at least one melting event independently selected from e-beam melting, vacuum arc melting, vacuum induction melting, induction skull melting and plasma melting.
摘要翻译：本发明包括含有等量的镍和钛的合金。该合金具有形状记忆和至少约99.995％的金属纯度，并且包含小于约200ppm的气体。本发明还包括含有钛和镍的合金，其中钛和镍的量是不等价的。该合金具有形状记忆并具有至少99.995％的金属纯度，并且含有小于约200ppm的气体。本发明还包括一种生产形状记忆合金的方法。提供具有至少99.999％的金属纯度的钛和提供具有至少99.99％的金属纯度的镍。利用独立选自电子束熔化，真空电弧熔化，真空感应熔化，感应头骨熔化和等离子熔化的至少一个熔化事件来合并钛和镍。

5. 发明申请

WO02088413A3 SPUTTER TARGETS COMPRISING TI AND ZR 审中-公开
标题翻译：包括TI和ZR的飞溅目标
公开(公告)号：WO02088413A3
公开(公告)日：2003-01-30
申请号：PCT/US0117670
申请日：2001-05-31
申请人： HONEYWELL INT INC , TURNER STEPHEN P
发明人： TURNER STEPHEN P
IPC分类号： C23C14/34 , H01L21/314 , H01L21/316
CPC分类号： C23C14/3414 , H01L21/31691
摘要： The invention described herein relates to physical vapor deposition targets comprising both Ti and Zr. The targets can comprise a uniform texture across the target surface and throughout the thickness; and can further have an increased mechanical strength compared to high purity titanium and tantalum. The sputtering targets can be utilized to sputter deposit a thin film; and such thin film can be utilized as a copper barrier layer.
摘要翻译：本文描述的本发明涉及包括Ti和Zr的物理气相沉积靶。目标可以包括穿过目标表面和整个厚度的均匀纹理; 并且与高纯钛和钽相比可以进一步具有增加的机械强度。溅射靶可用于溅射沉积薄膜; 并且这种薄膜可以用作铜阻挡层。

6. 发明申请

WO02088413B1 SPUTTER TARGETS COMPRISING TI AND ZR 审中-公开
标题翻译：包含TI和ZR的溅射靶材
公开(公告)号：WO02088413B1
公开(公告)日：2003-07-03
申请号：PCT/US0117670
申请日：2001-05-31
申请人： HONEYWELL INT INC , TURNER STEPHEN P
发明人： TURNER STEPHEN P
IPC分类号： C23C14/34 , H01L21/314 , H01L21/316
CPC分类号： C23C14/3414 , H01L21/31691
摘要： The invention described herein relates to physical vapor deposition targets comprising both Ti and Zr. The targets can comprise a uniform texture across the target surface and throughout the thickness; and can further have an increased mechanical strength compared to high purity titanium and tantalum. The sputtering targets can be utilized to sputter deposit a thin film; and such thin film can be utilized as a copper barrier layer.
摘要翻译：本文所述的发明涉及包含Ti和Zr的物理气相沉积靶。目标可以在整个目标表面和整个厚度上包含均匀的纹理; 并且与高纯度钛和钽相比可以进一步具有增加的机械强度。溅射靶可用于溅射沉积薄膜; 并且这种薄膜可以用作铜阻挡层。

7. 发明公开

KR20180018471A 비파괴 검사용 보이드 프리 개재물 기반 기준 표준 및 제조방법 审中-公开
标题翻译：基于无障碍包裹的无损检测参考标准和制造方法
公开(公告)号：KR20180018471A
公开(公告)日：2018-02-21
申请号：KR20177011089
申请日：2016-06-30
申请人： HONEYWELL INT INC
发明人： SUNDARRAJ SURESH , PINTER MICHAEL R , PAYTON MICHAEL D , ALBERT MARK H , TURNER STEPHEN P , DEDERICK DONALD M
IPC分类号： G01N29/06 , G01N29/02
CPC分类号： G01N29/30 , G01N29/043 , G01N29/0645 , G01N29/075 , G01N2291/012 , G01N2291/0232 , G01N2291/0234 , G01N2291/02458 , G01N2291/044
摘要： 초음파스캐닝장치를교정하기위한기준표준은제1 물질, 제1 면및 상기제1 면에대향하는제2 면을포함하는제1 부분을포함한다. 상기기준표준은또한, 제2 물질, 제1 면및 상기제1 면에대향하는제2 면을포함하는제2 부분을포함한다. 상기제2 부분의제2 면은상기제1 부분의제1 면에인접하여계면을형성한다. 상기기준표준은또한, 제1 부분의제1 면및 제2 부분의제2 면을통하여축방향으로연장된기준물질을포함한다. 상기제1 부분과제2 부분은상기제1 물질과기준물질의계면및 상기제2 물질과기준물질의계면에서보이드가없도록교정표준과같은기준물질을둘러싸도록구성된다.
摘要翻译：一种用于校准超声扫描装置的参考标准，该超声扫描装置包括包含第一材料，第一面和与第一面相对的第二面的第一部分。参考标准还具有包括第二材料，第一面和与第一面相对的第二面的第二部分。第二部分的第二面与第一部分的第一面相邻并形成界面。参考标准还包括轴向延伸通过第一部分的第一面和第二部分的第二面的参考材料。第一部分和第二部分被配置为封闭参考材料，使得校准标准在第一材料与参考材料之间的界面处以及在第二材料与参考材料之间的界面处无空隙。

8. 发明申请

WO02061168A2 METHODS OF FORMING TITANIUM-BASED AND ZIRCONIUM-BASED MIXED-METAL MATERIALS; AND SPUTTERING TARGETS 审中-公开
标题翻译：形成基于金属和基于锆的混合金属材料的方法; 和飞溅目标
公开(公告)号：WO02061168A2
公开(公告)日：2002-08-08
申请号：PCT/US0150645
申请日：2001-10-17
申请人： HONEYWELL INT INC
发明人： TURNER STEPHEN P , GREEN JOSEPH E , SCAGLINE RODNEY L , XU YUN
IPC分类号： C22B5/04 , C22B5/12 , C22B34/12 , C22B34/14 , C22C14/00 , C22C16/00 , C23C14/34 , C25C3/26 , C22B34/00 , C22C27/00 , C23C16/08
CPC分类号： C22B34/14 , C22B34/1263 , C23C14/3414
摘要： The invention encompasses methods of forming titanium-based mixed-metal materials and zirconium-based mixed-metal materials utilizing one or more of a reduction process, electrolysis process and iodide process. The invention also encompasses a sputtering target comprising zirconium and one or more elements selected from the group consisting of Al, B, Ba, Be, Ca, Ce, Co, Cs, Dy, Er, Fe, Gd, Hf, Ho, La, Mg, Mn, Mo, Nb, Ni, Pr, Sc, Sm, Sr, Ta, Ti, V, W, Y, and Yb. The invention also encompasses a sputtering target comprising titanium and boron.
摘要翻译：本发明包括利用还原法，电解法和碘化法中的一种或多种形成钛基混合金属材料和锆基混合金属材料的方法。本发明还包括包含锆和选自Al，B，Ba，Be，Ca，Ce，Co，Cs，Dy，Er，Fe，Gd，Hf，Ho，La中的一种或多种元素的溅射靶， Mg，Mn，Mo，Nb，Ni，Pr，Sc，Sm，Sr，Ta，Ti，V，W，Y和Yb。本发明还包括包含钛和硼的溅射靶。

9. 发明申请

WO0192906A2 METHOD AND APPARATUS FOR DETERMINING THE PASS THROUGH FLUX OF MAGNETIC MATERIALS 审中-公开
标题翻译：用于确定通过磁性材料的通路的方法和装置
公开(公告)号：WO0192906A2
公开(公告)日：2001-12-06
申请号：PCT/US0116410
申请日：2001-05-21
申请人： HONEYWELL INT INC
发明人： XU YUN , GUO WEI , TURNER STEPHEN P
IPC分类号： G01R33/10
CPC分类号： G01R33/10
摘要： The invention includes an apparatus and method for determining the pass through flux of magnetic materials. The apparatus comprises one or more magnetic field sensors arranged in such a way as to collect field strength data in any or all the x, y, z directions. The apparatus also comprises a magnet field source or arrangement of magnet field sources which are placed beneath the material being characterized and includes a mechanism whereby the magnetic material can be mapped by the movement of any one or combination of: magnetic field source or sources, sensors and magnetic material. The invented method comprises the use of various configurations of magnetic sources in order to generate a magnetic field that emulates the open-loop condition found in magnetron sputtering.
摘要翻译：本发明包括用于确定磁性材料通过通量的装置和方法。该装置包括一个或多个磁场传感器，其布置成在任何或所有x，y，z方向上收集场强数据。该装置还包括磁场源或磁场源的布置，其被放置在被表征的材料之下，并且包括机构，由此磁性材料可以通过以下任何一种或组合的运动来映射：磁场源或传感器和磁性材料。本发明的方法包括使用各种结构的磁源，以产生模拟在磁控溅射中发现的开环条件的磁场。

10. 发明公开

EP3191831A4 A VOID FREE INCLUSION-BASED REFERENCE STANDARD FOR NONDESTRUCTIVE TESTS AND METHOD OF MAKING 审中-公开
公开(公告)号：EP3191831A4
公开(公告)日：2018-04-25
申请号：EP16824884
申请日：2016-06-30
申请人： HONEYWELL INT INC
发明人： SUNDARRAJ SURESH , PINTER MICHAEL R , PAYTON MICHAEL D , ALBERT MARK H , TURNER STEPHEN P , DEDERICK DONALD M
IPC分类号： G01N29/06 , G01N29/02 , G01N29/04 , G01N29/07 , G01N29/30
CPC分类号： G01N29/30 , G01N29/043 , G01N29/0645 , G01N29/075 , G01N2291/012 , G01N2291/0232 , G01N2291/0234 , G01N2291/02458 , G01N2291/044
摘要： A reference standard for calibrating an ultrasonic scanning apparatus comprising a first portion comprising a first material, a first face, and a second face opposite the first face. The reference standard also has a second portion comprising a second material, a first face, and a second face opposite the first face. The second face of the second portion is adjacent the first face of the first portion and forms an interface. The reference standard also includes a reference material extending axially through the first face of the first portion and the second face of the second portion. The first portion and second portion are configured to enclose the reference material such that the calibration standard is void free at an interface between the first material and the reference material and at an interface between the second material and the reference material.

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