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1. 发明专利

JPS63174245A IMAGE PICKUP TUBE TARGET 失效
公开(公告)号：JPS63174245A
公开(公告)日：1988-07-18
申请号：JP486987
申请日：1987-01-14
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： ISHIOKA YOSHIO , TAKASAKI YUKIO , TSUJI KAZUTAKA , MAKISHIMA TATSUO , YAMASHITA TAKASHI , KAWAMURA TATSURO , TANIOKA KENKICHI , AIBA MASAAKI
IPC分类号： H01J29/45
摘要： PURPOSE:To obtain the low afterimage and high resolution and improve sensitivity by applying the electric field multiplying charges in a semiconductor layer to a photoconductive target having a blocking type structure and operating it at the preset temperature or below. CONSTITUTION:The electric field is applied to a pickup tube target having a translucent substrate 1, a transparent conductive film 2, an amorphous Se photoconductive layer 4, and an electron injection blocking layer 5 as basic portions with a preset signal current. Under this condition, when the light is radiated from the glass substrate side, most of the incident light is absorbed mainly by the transparent electrode side of the amorphous Se layer to generate a pair of electrons and positive holes. Among them, electrons run to the transparent electrode side, and posive holes run to the electron injection blocking layer through the amorphous Se layer. Therefore, a charge multiplying action occurs when the positive holes run through the amorphous Se layer in the high electric field, if the amorphous is made thick enough to get the desired characteristic, electric charges are multiplied, and high sensitivity having a gain larger than 1 can be obtained, with the low-afterimage property of a blocking type target maintained. Furthermore, if the temperature of the target is made 40 deg.C or below, highlight burning is quickly eliminated, and a good image can be obtained.

2. 发明专利

JPH0696688A IMAGE PICKUP TUBE AND OPERATION METHOD THEREFOR 失效
公开(公告)号：JPH0696688A
公开(公告)日：1994-04-08
申请号：JP15178593
申请日：1993-06-23
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： TANIOKA KENKICHI , SHIDARA KEIICHI , KAWAMURA TATSURO , YAMAZAKI JUNICHI , HIRUMA SHIGEHISA , TAKETOSHI KAZUHISA , SUZUKI SHIRO , YAMASHITA TAKASHI , KOSUGI MITSUO , IKEDA YOSHITSUMI , AIBA MASAAKI , HIRAI TADAAKI , TAKASAKI YUKIO , ISHIOKA YOSHIO , MAKISHIMA TATSUO , SAMEJIMA KENJI , UDA TAKESHI , GOTO NAOHIRO , NONAKA IKUMITSU , INOUE SHIGENORI
IPC分类号： H01J29/45 , H01J31/38
摘要： PURPOSE:To provide an image pickup tube having high sensitivity, generating less afterimage and small dark current, and further having sensitivity even for incident light of long wavelength. CONSTITUTION:A photo-conductive film having a blocking type contact is constituted of a light carrier generation layer 86 for absorbing incident light and generating most of light carriers, and an electric charge multiplying layer 84 consisting of an amorphous semiconductor and having the capability of multiplying the generated light carriers. Also, this tube is operated in an electrical field zone where electrical charge is multiplied in the amorphous semiconductor.

3. 发明专利

JPS63236247A PHOTOELECTRIC CONVERSION DEVICE 失效
公开(公告)号：JPS63236247A
公开(公告)日：1988-10-03
申请号：JP6563387
申请日：1987-03-23
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TAKASAKI YUKIO , TSUJI KAZUTAKA , SAMEJIMA KENJI , MATSUBARA HIROKAZU , ISHIOKA YOSHIO , SHIDARA KEIICHI , KAWAMURA TATSURO , TAKETOSHI KAZUHISA , TANIOKA KENKICHI , YAMAZAKI JUNICHI
IPC分类号： H01J29/45
摘要： PURPOSE:To obtain a photoelectric conversion device which has gains larger than one and so has high sensitivity and is thermally stable by applying an electric field to an amorphous semiconductor layer and operating this device so as to generate a charge multiplication action in a region mainly exclusive of a junction interface in the amorphous semiconductor layer. CONSTITUTION:This photoelectric conversion device is composed of a substrate 1, a signal readout electrode 2, a charge implantation suppressing layer 3, a photoconductive layer 4 inclusive of an amorphous semiconductor with a charge multiplication action, a layer 5 which has polarity opposite to that of the layer 3 and suppresses implantation of charges, and paired electrodes 6. The amorphous semiconductor layer is composed of mainly a tetrahedral group element which contains at least one element of hydrogen and halogen. Electrical junction structure which has property of suppressing the electrons implanted from outside is formed between the photoconductive layer 4 and an external electrode. An electric field is applied to the amorphous semiconductor layer and so the device is operated so as to generate a charge multiplication action in a region mainly exclusive of a junction interface in the amorphous semiconductor layer. Thus, an amorphous semiconductor light- receiving element, which has photoelectric conversion gains larger than one and is good in its light response characteristic and excellent in its heat-resisting performance, can be obtained.

4. 发明专利

JPS63233574A OPTOELECTRONIC TRANSDUCER 失效
公开(公告)号：JPS63233574A
公开(公告)日：1988-09-29
申请号：JP6563487
申请日：1987-03-23
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TAKASAKI YUKIO , TSUJI KAZUTAKA , MAKISHIMA TATSUO , HIRAI TADAAKI , ISHIOKA YOSHIO , KAWAMURA TATSURO , SHIDARA KEIICHI , HIRUMA SHIGEHISA , TANIOKA KENKICHI , YAMAZAKI JUNICHI
IPC分类号： H01L31/107 , H01L31/0248 , H01L31/08 , H01L31/10
摘要： PURPOSE:To increase the gain of photoelectric conversion larger than one and to make an optical response characteristic excellent, by causing charge multiplying action in an amorphous semiconductor layer, in which a compound of silicon and carbon including one of a hydrogen or halogen element is a main body, at a part of a photoconductive layer. CONSTITUTION:An electrode 2, whose main body is Cr, is formed on a semi-insulating semiconductor substrate 1. An a-SiN:H film having a thickness of 10 nm is deposited as a hole injection blocking layer 3 on the electrode 2. Then, as a photoconductive layer, an a-Si80C20:H film having a thickness of 0.5-10mum is deposited. Then, as an electron injection blocking layer, a thin silicon oxide film is deposited to a thickness of 8 nm. A transparent electrode 6, whose main body is tin oxide, is formed. An electric field, which causes avalanche multiplication in an amorphous semiconductor layer, is applied. When light is projected from the side of a light transmitting film, the incident light is absorbed in the photoconductive layer including the amorphous semiconductor layer, and electron-hole pairs are generated. Said pairs run in the reverse direction determined by the direction of the applied voltage. Therefore, the thickness of the amorphous layer and the direction of the electric field are set so that the electric field multiplying action occurs effectively when the electric charge having a high ionization rate runs in the amorphous layer under the high electric field within the adopted amorphous material.

5. 发明专利

JPS63174480A PHOTOELECTRIC CONVERTING DEVICE 失效
公开(公告)号：JPS63174480A
公开(公告)日：1988-07-18
申请号：JP486687
申请日：1987-01-14
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： ISHIOKA YOSHIO , TAKASAKI YUKIO , HIRAI TADAAKI , TSUJI KAZUTAKA , MAKISHIMA TATSUO , NONAKA IKUMITSU , KAWAMURA TATSURO , YAMASHITA TAKASHI , TAKETOSHI KAZUHISA , SHIDARA KEIICHI , ANDO FUMIHIKO , TANIOKA KENKICHI
IPC分类号： H01L27/146 , H01L31/0272 , H01L31/08 , H01L31/09 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/372 , H04N5/374
摘要： PURPOSE:To make photo response characteristic favorable by laminating an amorphous semiconductor having block type construction on a scanning substrate for reading signals and actuating with an electric field in which charge doubling action occurs in the layer of the amorphous semiconductor. CONSTITUTION:By forming a light transmitting conductive film on a glass substrate 7 and separating the light transmitting conductive film in a photo etching method, an individual reading electrode 2 is obtained. Next, on the reading electrode 2, a mask where long-sized hole is provided is made to pass through and a CeO2 thin film as a rectifier contact auxiliary layer 3 and an amorphous Se as a photo conductive film 4 are vapor-deposited by the thickness about 0.5-6mum. By depositing the light transmitting conductive film 5 on the amorphous Se layer 4 in the methods of vapor-depositing and sputtering, etc., the photoelectric conversion part is formed. By impressing the electric field in a direction where the light transmitting conductive film 5 becomes in a positive electric potential and projecting a light beam, electron positive hole pair is generated in the amorphous Se layer 4 and the charge doubling action is caused when the hole runs, so that the rapid photo response characteristic can be realized.

6. 发明专利

JPS63174249A LIGHT RECEIVING DEVICE 失效
公开(公告)号：JPS63174249A
公开(公告)日：1988-07-18
申请号：JP486887
申请日：1987-01-14
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： MAKISHIMA TATSUO , HIRAI TADAAKI , TSUJI KAZUTAKA , ISHIOKA YOSHIO , YAMASHITA TAKASHI , SHIDARA KEIICHI , YAMAZAKI JUNICHI , AIBA MASAAKI
IPC分类号： H01J31/38 , H01J29/45 , H01L31/0272 , H04N5/228
摘要： PURPOSE:To obtain the stable high-sensitivity characteristic by radiating the preset light separate from an object to be photographed to a light receiving device which multiplies charges in it and sharply increases its sensitivity and controlling the externally applied voltage so that the output signal for the preset light becomes invariably constant. CONSTITUTION:A light receiving device is constituted of a translucent substrate 1, a transparent conductive film 2, a amorphous Se photoconductive layer 4, a photoconductive target section made of an electron injection blocking layer 5, a scanning electron beam generating unit, a power supply 11 to feed the voltage to the target, a voltage control circuit 10 to adjust the power supply 11, an output signal current detector 9, and the constant-quantity light 8 to obtain the signal controlling the applied voltage. The output signal current component for the constant-quantity light 8 is separated by the detector 9, and the power supply 11 is controlled via the voltage control circuit 10 so that this value becomes constant. Accordingly, the incident light 7 from an object to be photographed can be converted into an electrical signal and read out stably and reproductively with a high gain.

7. 发明专利

JPS63304551A IMAGE PICKUP TUBE AND ITS WORKING METHOD 失效
公开(公告)号：JPS63304551A
公开(公告)日：1988-12-12
申请号：JP14902387
申请日：1987-06-17
申请人： JAPAN BROADCASTING CORP , HITACHI LTD
发明人： TANIOKA KENKICHI , SHIDARA KEIICHI , KAWAMURA TATSURO , YAMAZAKI JUNICHI , HIRUMA SHIGEHISA , TAKETOSHI KAZUHISA , SUZUKI SHIRO , YAMASHITA TAKASHI , KOSUGI MITSUO , IKEDA YOSHIKAZU , AIBA MASAAKI , HIRAI TADAAKI , TAKASAKI YUKIO , ISHIOKA YOSHIO , MAKISHIMA TATSUO , SAMEJIMA KENJI , UDA TAKESHI , GOTO NAOHIRO , NONAKA IKUMITSU , INOUE SHIGENORI
IPC分类号： H01J29/45 , H01L31/08
摘要： PURPOSE:To provide an image pickup tube with low after-image, high resolution, and a greatly enhanced sensitivity by using an amorphous semi-conductor layer of specific film thickness having charge doubling function to a photo-conductive target part having check type construction. CONSTITUTION:A target part is furnished, at which a transparent electrode 2 and a photo-conductive film 3 are formed on a transparent base, and an electron beam 6 is emitted to scan the target part. This film 3 has check type contact and consists of an amorphous semi-conductor with Se as main component, and the electric field region is 5X10 -2X10 V/m and the film thickness 0.5-10mum. Here the amorphous semi-conductor layer contains elements from Te, Sb, Cd, Bi in the film thickness direction, and the mean content is from 0.01% to 50% by wt. The amorphous semi-conductor layer forms positive-hole catch level in the film direction, and the substances to form the level are selected from Li, Na, K, Mg and their fluorides, and Al, Cr, Mn and their fluorides. The local concentration of the substance forming the electron catch level within the amorphous semi-conductor layer is from 20ppm by wt. to 10% by wt.

8. 发明专利

JPS63174246A IMAGE PICKUP DEVICE 失效
公开(公告)号：JPS63174246A
公开(公告)日：1988-07-18
申请号：JP487087
申请日：1987-01-14
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： MAKISHIMA TATSUO , ISHIOKA YOSHIO , TAKASAKI YUKIO , SAMEJIMA KENJI , KAWAMURA TATSURO , YAMASHITA TAKASHI , SHIDARA KEIICHI , YAMAZAKI JUNICHI
IPC分类号： H01J29/45
摘要： PURPOSE:To obtain the low afterimage and high resolution and improve sensitivity by using an amorphous semiconductor layer having a charge multiplying function as a photoconductive target having a blocking type structure and making the light transmittance of a used color filter for the long-wavelength light relatively larger than the light transmittance for the short-wavelength light. CONSTITUTION:The electric field is applied to an image pickup tube target constituted of a translucent substrate 1, a transparent conductive film 2, an amorphous Se photoconductive layer 4, an electron injection blocking layer 5, and a color filter 6 as basic portions with a preset signal current. Under this condition, when the light is radiated from the glass substrate side, the incident light is fed to the amorphous Se layer via the color filter having the transmittance for the long-wavelength component higher than the transmittance for the short-wavelength component and absorbed mainly by the transparent electrode side of the amorphous Se layer to generate a pair of electrons and positive holes. Among them, electrons run to the transparent electrode side, and positive holes run to the electron injection blocking layer through the amorphous Se layer. Therefore, a charge multiplying function occurs when the positive holes run through the amorphous layer in the high electric field, and a high- sensitivity image pickup tube having a gain larger than 1 and balanced spectral sensitivity over the whole range of the visible light can be obtained, while the low afterimage property of a blocking type target is maintained.

9. 发明专利

JPS63174244A LIGHT RECEIVING ELEMENT 失效
公开(公告)号：JPS63174244A
公开(公告)日：1988-07-18
申请号：JP486787
申请日：1987-01-14
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： TSUJI KAZUTAKA , TAKASAKI YUKIO , HIRAI TADAAKI , ISHIOKA YOSHIO , OGAWA HIROBUMI , NONAKA IKUMITSU , YAMAZAKI JUNICHI , KAWAMURA TATSURO , SHIDARA KEIICHI , IKEDA YOSHITSUMI , TANIOKA KENKICHI , KOSUGI MITSUO
IPC分类号： H01L31/0264 , H01J29/45 , H01L27/14 , H01L27/146 , H01L31/08 , H04N5/335 , H04N5/357 , H04N5/369 , H04N5/372
摘要： PURPOSE:To make the photoelectric conversion gain larger than 1 and make the light response characteristic excellent by multiplying and extracting light carriers generated by the incident light in a photoconductive layer which is mainly made of an amorphous semiconductor having a charge multiplying action and has a blocking type structure. CONSTITUTION:This element is basically constituted of a substrate 1, a metal electrode 2, a photoconductive layer 4 mainly made of an amorphous semiconductor having a charge multiplying action, end a counter electrode 5. The electric field generating a charge multiplying //action with a specific signal current is applied to this light receiving element. Under this condition, when the light is radiated from the substrate side or the counter electrode side, electrons among the generated light carriers run to the positive electrode side, and positive holes run to the negative electrode side. Electric charges are multiplied by the charge multiplying action of the amorphous semiconductor, and high sensitivity having a gain larger than 1 can be obtained.

10. 发明专利

JPS636729A TARGET OF IMAGE PICK-UP TUBE 失效
公开(公告)号：JPS636729A
公开(公告)日：1988-01-12
申请号：JP14955386
申请日：1986-06-27
申请人： HITACHI LTD , JAPAN BROADCASTING CORP
发明人： SHIMOMOTO TAIJI , ISHIOKA YOSHIO , TAKASAKI YUKIO , HIRAI TADAAKI , TSUJI KAZUTAKA , MAKISHIMA TATSUO , MATSUBARA HIROKAZU , SAMEJIMA KENJI , YAMAZAKI JUNICHI , TANIOKA KENKICHI , KOSUGI MITSUO , SHIDARA KEIICHI , KAWAMURA TATSURO , HIRUMA SHIGEHISA , YAMASHITA TAKASHI
IPC分类号： H01L31/08 , H01J29/45 , H01J31/38
摘要： PURPOSE:To stabilize characteristics without spoiling a superior feature, by making a photoelectric conversion part in a laminated construction composed of a-Si:H and amorphous chalcogenide material whose main element is Se. CONSTITUTION:On the glass plate 1 whose face is covered by depositor transparent and electrically conductive tin oxide film 2, 100Angstrom thick silicone oxide film and 0.1 to 1mum thick a-Si:H film 4 including 5ppm of boron are piled in order. Then, a Se layer 5 including 2% of arsenic is vapour deposited on said film 4 by 6mum thickness, also antimony trisulfide with 500Angstrom thickness is vapour deposited on it under the condition with inert gas introduced inside the vapour deposition device. A photoelectric conversion part formed like this is bonded to an incorporated glass tube, and the tube is evacuated and sealed, thus an image pick-up tube is obtained. When said image pick-up tube is operated by applying +200V to the transparent electrode side against the cathode side of an electron gun, the same sensitivity as that of the case using the a-Si photoelectric film having 4mum thickness is obtained, and deterioration of characteristics such as lowering of the sensitivity or increasing of dark current does not occur even after 10,000 hours of continuous operation.

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