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    • 7. 发明专利
    • MANUFACTURE OF COMPOUND SEMICONDUCTOR DEVICE
    • JPS62122276A
    • 1987-06-03
    • JP26112885
    • 1985-11-22
    • HITACHI LTD
    • INABA KEIZOTOCHIKUBO HIROOSHIMIZU SHUICHIKANAI AKIRA
    • H01L21/205H01L21/338H01L29/80H01L29/812
    • PURPOSE:To obtain the manufacturing method of a GaAs FFT characterized by no dispersion in threshold voltage VTH and source-drain current IDSS, by forming an active layer having a required thickness on a substrate, and partially forming a high-concentration semiconductor layer, which is ohmic-contacted with source and drain electrodes, on the active layer by a selective epitaxial method. CONSTITUTION:On one main surface of a GaAs substrate 1, a gate electrode G comprising metal, which forms a Schottky barrier, and source and drain electrodes comprising metal, which is ohmic-contacted with the substrate so as to hold the gate in-between, are formed. In this manufacturing method of GaAs FET, an n-type active layer 3 having a required thickness is formed on the GaAs substrate 1. A high-concentration n type layer 9, which is ohmic- contacted with the source and drain electrodes, is partially formed on the active layer by a selective epitaxial method. Thus the gate electrode G is formed on the n-type active layer 3, which has a substantially recessed shape. Thus the width of the active layer directly beneath the gate can be controlled, and dispersion in VTH and the like can be reduced.
    • 9. 发明专利
    • MANUFACTURE OF SEMICONDUCTOR DEVICE
    • JPH0354814A
    • 1991-03-08
    • JP2957290
    • 1990-02-13
    • HITACHI LTD
    • KANAI AKIRATOCHIKUBO HIROO
    • H01L21/74H01L21/027H01L21/30
    • PURPOSE:To improve the accuracy of mask alignment for a buried layer formed in a semiconductor substrate partially by a method wherein an infrared beam is applied onto the main surface of the semiconductor substrate and the reflective image of the buried layer obtained by the beam application is detected and used as the reference for the mask alignment. CONSTITUTION:An epitaxial semiconductor layer 4 is formed on a semiconductor substrate 1. Then a buried layer 2 which has higher impurity concentration than the layer 4 is partially formed between the substrate 1 and the layer 4. An infrared beam is applied onto the main surface of the substrate 1 and a reflective image 7 obtained by the beam application is used as the reference for mask alignment. After that, impurity is selectively introduced into the surface of the layer 4 by using the mask to form a semiconductor region. With this constitution, even if there is slack or discrepancy in the upper layer, the layer 2 can be recognized directly, and thereby the accuracy of mask alignment for the layer 2 can be improved.
    • 10. 发明专利
    • SEMICONDUCTOR DEVICE
    • JPS644065A
    • 1989-01-09
    • JP15770887
    • 1987-06-26
    • HITACHI LTDHITACHI MICROCUMPUTER ENG
    • KANAI AKIRAKAWAMURA MAKOTOTOCHIKUBO HIROO
    • H01L21/76H01L21/331H01L29/72H01L29/73H01L29/732
    • PURPOSE:To form a transistor of a fine pattern without deteriorating breakdown strength, by forming a selective epitaxial semiconductor region surrounded by sidewalls of SiO2 on one main surface of a semiconductor substrate and then by forming the transistor on a surface of this region and forming a base diffusion layer on a region where lamination defects and facets generated along the sidewalls are avoided. CONSTITUTION:An Si wafer of crystal face (100) is used to perform selective setting of chip bearing so that an orientation flat is made in a slant direction as shown in an arrow. A base diffusion layer 5 is formed by mask diffusion and base/collector junction is formed to be exposed on a surface distant by a fixed length or above from sidewalls 2 made of SiO2. A cause of dielectric strength deterioration is considered to be that base junction is formed on a lamination defect 8 along one sidewall or that a distance between the base diffusion layer 5 and the sidewall 2 s SiO2 is too small. Therefore the base diffusion layer 5 is formed distant by a fixed length (l) from the sidewalls 2. Hence, breakdown strength is prevented from being deteriorated without occurrence of leak through.