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1. 发明专利

DE10003671A1 Semiconductor component, especially a surface mountable semiconductor package, has front and back face electrodes connected to metal parts by precious metal-containing bodies or layers 未知
公开(公告)号：DE10003671A1
公开(公告)日：2000-08-10
申请号：DE10003671
申请日：2000-01-28
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KAJIWARA RYOICHI , KOIZUMI MASAHIRO , MORITA TOSHIAKI , TAKAHASHI KAZUYA , KISHIMOTO MUNEHISA , ISHII SHIGERU , HIRASHIMA TOSHINORI , TAKAHASHI YASUSHI , HATA TOSHIYUKI , SATO HIROSHI , OOKAWA KEIICHI
IPC分类号： H01L21/60 , H01L21/56 , H01L23/485 , H01L23/495 , H01L23/34
摘要： Semiconductor component has front and back face electrodes connected to metal parts by precious metal-containing bodies or layers. An independent claim is also included for production of the above semiconductor component. Preferred Features: The back face electrode may be connected to its associated metal part by a layer of precious metal alloy with a solidus temperature of >=400 [deg] C. The component may comprise a chip having an electrode which is provided with an Al (alloy) film and which is connected by Au bumps to a metal part provided with a plated precious metal film on its connection face, the aluminum film consisting entirely of an Au/Al alloy in the thickness direction over more than 80% of the Au/Al connection region area.

2. 发明专利

JP2000223634A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JP2000223634A
公开(公告)日：2000-08-11
申请号：JP1943199
申请日：1999-01-28
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KAJIWARA RYOICHI , KOIZUMI MASAHIRO , MORITA TOSHIAKI , TAKAHASHI KAZUYA , KISHIMOTO MUNEHISA , ISHII SHIGERU , HIRASHIMA TOSHINORI , TAKAHASHI YASUSHI , NAMITA TOSHIYUKI , SATO HITOHISA , OKAWA KEIICHI
IPC分类号： H01L23/36 , H01L23/48
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor device having a package structure capable of reducing the mounting resistance. SOLUTION: First metal members (lead terminals 5, 6) are connected to a first electrode (a source electrode 2) of a semiconductor element (a semiconductor chip 1) via first metal bodies (Au bumps 8) including a noble metal, and a second metal member (a die terminal 7) is connected to a second electrode (a rear electrode 4) via second metal bodies (plated with noble metal 14 and Ag 15). Thereby, a drastic decrease in the mounting resistance such as 1 mΩ or lower can be achieved.

3. 发明专利

DE69726518T2 未知
公开(公告)号：DE69726518T2
公开(公告)日：2004-10-07
申请号：DE69726518
申请日：1997-09-02
申请人： HITACHI LTD , HITACHI KYOWA ENGINEERING CO
发明人： TANAKA AKIRA , INOUE HIROKAZU , KUSHIMA TADAO , KOIKE YOSHIHIKO , SHIMIZU HIDEO , SAITO RYUICHI , SUZUKI KAZUHIRO , KURIHARA YASUTOSHI , OKADA SENSUKE , KOIZUMI MASAHIRO , KAJIWARA RYOICHI , SONOBE YUKIO , NAKATSU KINYA , KURIBAYASHI SHIGEHISA
IPC分类号： H01L23/498 , H01L23/538 , H01L25/07 , H02M7/00
摘要： An IGBT unit of a power semiconductor module which comprises a plurality of insulation substrates each of which mounting a plurality of semiconductor devices thereon which are to be operated in parallel within the module is provided. External terminals corresponding to each unit are disposed outside the module for parallel operation thereof, thereby minimizing inductance between respective semiconductor devices and their wirings.

4. 发明专利

DE3682797D1 未知
公开(公告)号：DE3682797D1
公开(公告)日：1992-01-23
申请号：DE3682797
申请日：1986-03-25
申请人： HITACHI LTD
发明人： KAJIWARA RYOICHI , FUNAMOTO TAKAO , KATOO MITSUO , SHIDA TOMOHIKO , MATSUZAKA TAKESHI , WACHI HIROSHI , TAKAHASHI KAZUYA
IPC分类号： H01L23/473 , H01L23/433 , H01L23/46
摘要： A semiconductor module cooling structure comprises a housing (33) having a passage (45, 46) through which a cooling fluid flows; a cooling block (72,75) to which the cooling fluid is supplied from the housing and which has an electrical insulating layer (36, 59) at the bottom portion and is combined with a semiconductor chip (40) through the electrical insulating layer; and a bellows (34) which is connected between the housing and the cooling block. The cooling fluid is supplied to the cooling block through the bellows. The bellows is formed in a manner such that a plurality of substantially plane ring-like metal plates (4) are laminated, pressed, diffused, joined, and thereafter stretched and molded.

5. 发明专利

DE69726518D1 未知
公开(公告)号：DE69726518D1
公开(公告)日：2004-01-15
申请号：DE69726518
申请日：1997-09-02
申请人： HITACHI LTD , HITACHI KYOWA ENGINEERING CO
发明人： TANAKA AKIRA , INOUE HIROKAZU , KUSHIMA TADAO , KOIKE YOSHIHIKO , SHIMIZU HIDEO , SAITO RYUICHI , SUZUKI KAZUHIRO , KURIHARA YASUTOSHI , OKADA SENSUKE , KOIZUMI MASAHIRO , KAJIWARA RYOICHI , SONOBE YUKIO , NAKATSU KINYA , KURIBAYASHI SHIGEHISA
IPC分类号： H01L23/498 , H01L23/538 , H01L25/07 , H02M7/00
摘要： An IGBT unit of a power semiconductor module which comprises a plurality of insulation substrates each of which mounting a plurality of semiconductor devices thereon which are to be operated in parallel within the module is provided. External terminals corresponding to each unit are disposed outside the module for parallel operation thereof, thereby minimizing inductance between respective semiconductor devices and their wirings.

6. 发明专利

DE3680774D1 未知
公开(公告)号：DE3680774D1
公开(公告)日：1991-09-12
申请号：DE3680774
申请日：1986-12-10
申请人： HITACHI LTD
发明人： FUNAMOTO TAKAO , KATOU MITUO , KAJIWARA RYOICHI , MATSUZAKA TAKESHI , SHIDA TOMOHIKO , TAKAHASHI KAZUYA , WACHI HIROSHI , WATANABE MASATOSHI , YAMADA MINORU , SUGAWARA KATUO , NAKANISHI KEIICHIROU
IPC分类号： H01L23/473 , H01L23/538 , H05K1/02 , H05K1/03 , H05K7/20 , H01L23/46 , H01L23/52 , H01L23/42
摘要： An integrated circuit device has a wiring substrate (2) on one surface of which integrated circuit chips (l) are mounted. A power source substrate (5) of a laminated structure is in contact with the opposite surface of the wiring substrate (2), the power source substrate being of alternate laminations of conductor layers (7) of a heat conductive metal and insulating layers (6) of an electrically insulating material, which layers are bonded together. Means such as pins (4) electrically connect the wiring substrate and the power source substrate to each other, and hence connect the chips (l) to the conductive layers (7), a heat radiating means is provided in at least one of either or both of the conductor layers (7) and the insulating layers (6) and radiates heat, which occurs in the power source substrate (5), to the exterior of the device. Such an integrated circuit device has a power source substrate (5) of a remarkably high heat radiating efficiency, and may permit a high density of integrated circuit chips (l) on the wiring substrate (2).

7. 发明专利

DE3835767A1 未知
公开(公告)号：DE3835767A1
公开(公告)日：1989-05-03
申请号：DE3835767
申请日：1988-10-20
申请人： HITACHI LTD
发明人： KAJIWARA RYOICHI , FUNAMOTO TAKAO , KATO MITUO , WACHI HIROSHI , SHIDA TOMOHIKO
IPC分类号： H01L23/433
摘要： A number of LSI chips (9) are mounted on a wiring substrate (12). A cooling element (68) comprises a housing (1), a bellows (2) and a cooling plate (6) for introducing a cooling medium. The cooling element is connected to the LSI chip by low melting solder, at the same time, the cooling plate is connected to the wiring substrate through a skirt (5) which is connected to the cooling plate and also connected to the wiring substrate by a low melting solder.

8. 发明专利

DE3129283A1 未知
公开(公告)号：DE3129283A1
公开(公告)日：1982-06-03
申请号：DE3129283
申请日：1981-07-24
申请人： HITACHI LTD
发明人： KAJIWARA RYOICHI , KOKURA SATOSHI , KOZONO YUZO , ONUMA AKIRA
IPC分类号： B23K9/12 , B23K9/09 , B23K9/095 , B23K9/10
摘要： An electric power supply in pulse form is applied between a welding electrode and workpieces. The temperature of a molten pool is measured by a radiation-type thermometer when no power supply pulse is applied, and the welding condition is controlled in response to an output signal of the radiation-type thermometer.

10. 发明专利

JP2011029100A Enamel-covered insulated wire and its manufacturing method 有权
标题翻译： ENAMEL覆盖绝缘线及其制造方法
公开(公告)号：JP2011029100A
公开(公告)日：2011-02-10
申请号：JP2009175944
申请日：2009-07-29
申请人： Hitachi Cable Ltd , Hitachi Ltd , 日立電線株式会社 , 株式会社日立製作所
发明人： ANDO YOSHIYUKI , ABE TOMIYA , MOTOWAKI NARIHISA , KAJIWARA RYOICHI
IPC分类号： H01B13/00 , H01B7/02
CPC分类号： H01B3/006 , H01B3/30 , H01B3/302 , H01B3/305 , H01B3/306 , H01B3/421
摘要： PROBLEM TO BE SOLVED: To provide an enamel-covered insulated wire which has high adhesiveness between a metal conductor and an insulating coating and in which the adhesiveness between the metal conductor and the insulating coating is hard to be reduced even at a high temperature, and its manufacturing method.
SOLUTION: In this manufacturing method of the enamel-covered insulated wire, the insulating film is formed by means that a coating for the insulating film is coated on the metal conductor and baked. This manufacturing method includes: a process in which a treatment solution containing an organic metal compound of which metal component is zinc (Zn) or tin (Sn) is coated just above the metal conductor; a process in which heat treatment is applied to the coated organic metal compound and an intermediate layer containing oxide of the metal component is tightly formed to the metal conductor; and a process in which the coating for the insulating film coating composed of a resin composition containing either of polyesterimide, polyamideimide, polyimide, polyester, and polyurethane as the main component is coated on the intermediate layer. The organic metal compound is an organic carboxylic acid metal complex or a β-diketone metal complex.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在金属导体和绝缘涂层之间具有高粘合性的搪瓷覆盖的绝缘线，并且即使在高的情况下也难以降低金属导体和绝缘涂层之间的粘合性温度及其制造方法。解决方案：在这种搪瓷覆盖绝缘线的制造方法中，绝缘膜是通过将绝缘膜的涂层涂覆在金属导体上并烘烤而形成的。该制造方法包括：将金属成分为锌（Zn）或锡（Sn）的有机金属化合物的处理液涂布在金属导体正上方的工序，对涂布的有机金属化合物进行热处理的工序和与金属成分紧密地形成含有金属成分的氧化物的中间层的工序; 并且在中间层上涂布由以聚酯酰亚胺，聚酰胺酰亚胺，聚酰亚胺，聚酯，聚氨酯等为主要成分的树脂组合物构成的绝缘膜被膜的涂布。有机金属化合物是有机羧酸金属络合物或β-二酮金属络合物。版权所有（C）2011，JPO＆INPIT

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