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1. 发明申请

US20030180175A1 Corrosion-resisting and wear-resisting alloy and device using the same 审中-公开
公开(公告)号：US20030180175A1
公开(公告)日：2003-09-25
申请号：US10386501
申请日：2003-03-13
申请人： Hitachi, Ltd. , Hitachi Kyowa Engineering Co., Ltd.
发明人： Yoshihisa Kiyotoki , Yoshiteru Chiba , Shin Kumagai , Yasuhiro Ogawa , Akira Sakamoto , Hiroyuki Shinohara
IPC分类号： C22C019/03 , C22C019/07
CPC分类号： C22C19/057 , C21D7/13 , C22C19/07 , C22C38/02 , C22C38/04 , C22C38/34 , C22C38/44 , C22C38/58 , F01L1/047 , F01L1/16 , F01L3/02 , F01L2101/00 , Y10T428/12931
摘要： To provide a corrosion-resisting and wear resisting alloy including cobalt, nickel or iron as a base used for a sliding part or a valve seat for a machine, and restraining erosion and corrosion caused by eutectic carbide constituting the alloy in an atmosphere with dissolved oxygen. A material is selected from a cobalt base added with Cr and/or W, a nickel base added with Fe and/or Cr, and an iron vase added with Cr and/or Ni. The material is cast into an ingot or a slab to produce an intermediate material. The intermediate material comprises mesh-like eutectic carbide and a base material surrounded by the eutectic carbide. A heat plastic forming is applied to the intermediate material at a temperature 650null C. or more and the solidus temperature or less. The eutectic carbide is formed into multiple grains or clusters as a discontinuous distribution. A resulting corrosion-resisting and wear-resisting alloy has 0.1 to 0.5 of coefficient of friction, and 300 to 600 Hv of Vickers hardness without age-hardening process.

2. 发明申请

US20030094375A1 Electrolytic gold plating method and apparatus therefor 失效
标题翻译：电解镀金方法及其设备
公开(公告)号：US20030094375A1
公开(公告)日：2003-05-22
申请号：US09989469
申请日：2001-11-21
申请人： Hitachi Kyowa Engineering Co., Ltd.
发明人： Hiroyuki Kadota
IPC分类号： C25D003/48 , B05C005/00 , B05B005/025 , B05C009/08 , B05C011/00
CPC分类号： C25D21/14
摘要： An object of the present invention is to provide a method of monitoring deterioration of an electrolytic gold plating solution which can always stably performing gold plating by continuously detecting a deterioration state of the gold sulfite complex plating solution, and to provide an apparatus for monitoring the deterioration of the electrolytic gold plating solution. The present invention is characterized by an electrolytic gold plating method for performing electrolytic gold plating on a surface of a substrate body using a gold sulfite plating solution, wherein the gold plating is performed while deterioration of the plating solution is being always or intermittently detected during plating. Further, the present invention is characterized by an electrolytic gold plating apparatus for performing electrolytic gold plating on a surface of a substrate body using a gold sulfite plating solution, which comprises a detecting means for always or intermittently detecting deterioration of the plating solution and a monitoring unit for displaying the deterioration degree.
摘要翻译：本发明的目的是提供一种监测电解镀金液的劣化的方法，其通过连续检测亚硫酸复合镀液的劣化状态，可以始终稳定地进行镀金，并提供一种用于监测劣化的装置的电解镀金液。本发明的特征在于一种电镀金电镀方法，用于使用亚硫酸亚铁电镀液在基体表面上进行电解镀金，其中在电镀期间总是或间歇地检测到电镀溶液的劣化的同时执行镀金。此外，本发明的特征在于一种用于使用亚硫酸亚铁电镀液在基体表面上进行电解镀金的电解镀金装置，其包括用于总是或间歇地检测电镀液劣化的检测装置和监测显示劣化程度的单位。

3. 发明专利

TWI309465B 電子零件安裝用基板及電子零件有权
简体标题：电子零件安装用基板及电子零件
公开(公告)号：TWI309465B
公开(公告)日：2009-05-01
申请号：TW095105773
申请日：2006-02-21
申请人：日立協和技術工程公司 HITACHI KYOWA ENGINEERING CO., LTD.
发明人：秦昌平 HATA, SHOHEI , 松島直樹 MATSUSHIMA, NAOKI , 藤永猛 FUJINAGA TAKERU
IPC分类号： H01L
CPC分类号： H01L24/10 , H01L23/49582 , H01L23/49811 , H01L23/4985 , H01L23/49866 , H01L24/13 , H01L24/48 , H01L24/81 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/81801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H05K3/3426 , H05K3/3463 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012 , H01L2224/0555 , H01L2224/0556
摘要：本發明提供一種基板或電子零件,其係可防止形成於基板或電子零件之連接部之焊錫膜表面之氧化,可無助焊劑而進行連接者。本發明係於基板1上形成金屬化層2,於其上形成Sn焊錫膜3及Ag膜4之構造。Ag膜4係於大氣中、室溫下不會被氧化之金屬。於濕式製程,也因Ag與Sn之電池反應,只有露出的Sn焊錫膜3之側面會被氧化,會影響連接之焊錫膜上之Ag膜4上面不會被氧化。由於與Sn焊錫膜3的熔解的同時,Ag膜4會熔解到Sn焊錫中,故Ag膜4也不會阻礙連接。
简体摘要：本发明提供一种基板或电子零件,其系可防止形成于基板或电子零件之连接部之焊锡膜表面之氧化,可无助焊剂而进行连接者。本发明系于基板1上形成金属化层2,于其上形成Sn焊锡膜3及Ag膜4之构造。Ag膜4系于大气中、室温下不会被氧化之金属。于湿式制程,也因Ag与Sn之电池反应,只有露出的Sn焊锡膜3之侧面会被氧化,会影响连接之焊锡膜上之Ag膜4上面不会被氧化。由于与Sn焊锡膜3的熔解的同时,Ag膜4会熔解到Sn焊锡中,故Ag膜4也不会阻碍连接。

4. 发明专利

TW200644201A 電子零件安裝用基板及電子零件审中-公开
简体标题：电子零件安装用基板及电子零件
公开(公告)号：TW200644201A
公开(公告)日：2006-12-16
申请号：TW095105773
申请日：2006-02-21
申请人：日立協和技術工程公司 HITACHI KYOWA ENGINEERING CO., LTD
发明人：秦昌平 HATA, SHOHEI , 松島直樹 MATSUSHIMA, NAOKI , 藤永猛 FUJINAGA, TAKERU
IPC分类号： H01L
CPC分类号： H01L24/10 , H01L23/49582 , H01L23/49811 , H01L23/4985 , H01L23/49866 , H01L24/13 , H01L24/48 , H01L24/81 , H01L2224/0554 , H01L2224/05568 , H01L2224/05573 , H01L2224/05647 , H01L2224/13 , H01L2224/13099 , H01L2224/131 , H01L2224/13111 , H01L2224/451 , H01L2224/48091 , H01L2224/48247 , H01L2224/81801 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01068 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01084 , H01L2924/01322 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/15787 , H01L2924/15788 , H01L2924/181 , H01L2924/19041 , H01L2924/19043 , H05K3/3426 , H05K3/3463 , H01L2924/00 , H01L2224/45099 , H01L2224/05599 , H01L2924/00012 , H01L2224/0555 , H01L2224/0556
摘要：本發明提供一種基板或電子零件，其係可防止形成於基板或電子零件之連接部之焊錫膜表面之氧化，可無助焊劑而進行連接者。本發明係於基板1上形成金屬化層2，於其上形成Sn焊錫膜3及Ag膜4之構造。Ag膜4係於大氣中、室溫下不會被氧化之金屬。於濕式製程，也因Ag與Sn之電池反應，只有露出的Sn焊錫膜3之側面會被氧化，會影響連接之焊錫膜上之Ag膜4上面不會被氧化。由於與Sn焊錫膜3的熔解的同時，Ag膜4會熔解到Sn焊錫中，故Ag膜4也不會阻礙連接。
简体摘要：本发明提供一种基板或电子零件，其系可防止形成于基板或电子零件之连接部之焊锡膜表面之氧化，可无助焊剂而进行连接者。本发明系于基板1上形成金属化层2，于其上形成Sn焊锡膜3及Ag膜4之构造。Ag膜4系于大气中、室温下不会被氧化之金属。于湿式制程，也因Ag与Sn之电池反应，只有露出的Sn焊锡膜3之侧面会被氧化，会影响连接之焊锡膜上之Ag膜4上面不会被氧化。由于与Sn焊锡膜3的熔解的同时，Ag膜4会熔解到Sn焊锡中，故Ag膜4也不会阻碍连接。

5. 发明专利

CA2356026C CORROSION-RESISTING AND WEAR-RESISTING ALLOY AND DEVICE USING THE SAME 未知
公开(公告)号：CA2356026C
公开(公告)日：2008-11-25
申请号：CA2356026
申请日：2001-08-27
申请人： HITACHI LTD , HITACHI KYOWA ENGINEERING CO LTD
发明人： KUMAGAI SHIN , CHIBA YOSHITERU , OGAWA YASUHIRO , SHINOHARA HIROYUKI , SAKAMOTO AKIRA , KIYOTOKI YOSHIHISA
IPC分类号： C22C38/58 , B22D7/00 , B22D25/06 , C21D7/13 , C21D8/00 , C22C19/00 , C22C19/05 , C22C19/07 , C22C38/00 , C22C38/02 , C22C38/14 , C22C38/34 , C22C38/44 , C22F1/00 , C22F1/10 , C23F15/00 , F01L3/00 , F01L3/02 , F01L3/22 , F04B53/00 , F16K1/12 , F16K25/00
摘要： To provide a corrosion-resisting and wear resisting alloy including cobalt, nickel or iron as a base used for a sliding part or a valve seat for a machine, and restraining erosion and corrosion caused by eutectic carbide constituting the alloy in an atmosphere with dissolved oxygen. A material is selected from a cobalt base added with Cr and/or W, a nickel base added with Fe and/or Cr, and an iron vase added with Cr and/or Ni. The material is cast into an ingot or a slab to produce an intermediate material. The intermediate material comprises mesh-like eutectic carbide and a base material surrounded by the eutectic carbide. A heat plastic forming is applied to the intermediate material at a temperature 650.degree.C or more and the solidus temperature or less. The eutectic carbide is formed into multiple grains or clusters as a discontinuous distribution. A resulting corrosion-resisting and wear-resisting alloy has 0.1 to 0.5 of coefficient of friction, and 300 to 600 Hv of Vickers hardness without age-hardening process.

6. 发明专利

DE69726518D1 未知
公开(公告)号：DE69726518D1
公开(公告)日：2004-01-15
申请号：DE69726518
申请日：1997-09-02
申请人： HITACHI LTD , HITACHI KYOWA ENGINEERING CO
发明人： TANAKA AKIRA , INOUE HIROKAZU , KUSHIMA TADAO , KOIKE YOSHIHIKO , SHIMIZU HIDEO , SAITO RYUICHI , SUZUKI KAZUHIRO , KURIHARA YASUTOSHI , OKADA SENSUKE , KOIZUMI MASAHIRO , KAJIWARA RYOICHI , SONOBE YUKIO , NAKATSU KINYA , KURIBAYASHI SHIGEHISA
IPC分类号： H01L23/498 , H01L23/538 , H01L25/07 , H02M7/00
摘要： An IGBT unit of a power semiconductor module which comprises a plurality of insulation substrates each of which mounting a plurality of semiconductor devices thereon which are to be operated in parallel within the module is provided. External terminals corresponding to each unit are disposed outside the module for parallel operation thereof, thereby minimizing inductance between respective semiconductor devices and their wirings.

7. 发明专利

DE102006011232B4 Substrat zum Montieren eines elektronischen Bauteils sowie elektronisches Bauteil 未知
公开(公告)号：DE102006011232B4
公开(公告)日：2012-11-08
申请号：DE102006011232
申请日：2006-03-10
申请人： HITACHI KYOWA ENGINEERING CO
发明人： HATA SHOHEI , MATSUSHIMA NAOKI , FUJINAGA TAKERU
IPC分类号： H01L23/488 , H01L23/12
摘要： Substrat zum Montieren eines elektronischen Bauteils, mit: einem Trägermaterial (1), einer Metallisierungsschicht (2) auf dem Trägermaterial, einem Sn-Lot (3) auf einem Teil der Oberfläche der Metallisierungsschicht, einem Ag-Film (4) auf einer dem Montieren des elektronischen Bauteils dienenden Oberfläche des Sn-Lots, und einem auf dem Ag-Film ausgebildeten Au-Film (60).

8. 发明专利

AU2008200884B2 A treatment method of organic compounds included in waste water, a treatment apparatus of organic compounds included in waste water, a treatment system of organic compounds included in waste water, and a bitumen collecting system 未知
公开(公告)号：AU2008200884B2
公开(公告)日：2010-05-27
申请号：AU2008200884
申请日：2008-02-26
申请人： HITACHI KYOWA ENGINEERING CO LTD , HITACHI LTD
发明人： ISHII HAYAHITO , HONJI AKIO , ISOGAMI HISASHI , TSUYAMA TSUTOMU , MOCHIZUKI AKIRA , SAHO NORIHIDE
IPC分类号： B01D15/20 , C02F1/28 , C02F9/00
摘要： A treatment method of organic compounds included in waste water from bitumen collecting system, the method comprising the steps of: supplying waste water to an adsorber (2) filled with an adsorbent (3) therein for adsorbing the organic compounds in the waste water by the adsorbent (3) in the adsorber (2), supplying a current between an anode (9) and a cathode (8) in water including an electrolyte in an electrolyzer (6) for electrolyzing the water including an electrolyte, and supplying an electrolyte resulting from electrolysis in the electrolyzer (6) to the adsorbent (3) in the adsorber (2) for contacting the electrolyte with the adsorbent (3), so that the organic compounds adsorbed by the adsorbent (3) are desorbed or decomposed.

9. 发明专利

DE69829625T2 未知
公开(公告)号：DE69829625T2
公开(公告)日：2005-09-15
申请号：DE69829625
申请日：1998-11-09
申请人： HITACHI LTD , HITACHI ENG CO LTD , HITACHI KYOWA ENGINEERING CO
发明人： IRIE KAZUYOSHI , MORI TOSHIHIRO , YOKOYAMA HISAO , TOMIYAMA TAKAYUKI , TAKANO TOSHIHIDE , TAMATA SHIN , KANNO SHUICHI
IPC分类号： B01D53/86 , B01D53/14 , H01L21/00
摘要： An exhaust gas containing a perfluoride compound (PFC) and SiF4 is conducted into a silicon remover and contacted with water. A reaction water supplied from a water supplying piping and air supplied from an air supplying piping are mixed with the exhaust gas exhausted from the silicon remover. The exhaust gas containing water, air, and CF4 is heated at 700 DEG C by a heater. The exhaust gas containing PFC is conducted to a catalyst layer filled with an alumina group catalyst. The PFC is decomposed to HF and CO2 by the catalyst. The exhaust gas containing HF and CO2 at a high temperature exhausted from the catalyst layer is cooled in a cooling apparatus. Subsequently, the exhaust gas is conducted to an acidic gas removing apparatus to remove HF. In accordance with the present invention, the silicon component is removed from the exhaust gas before introducing the exhaust gas into the catalyst layer. Therefore, surface of the catalyst can be utilized effectively, and the decomposition reaction of the perfluoride compound can be improved.

10. 发明专利

DE69829625D1 未知
公开(公告)号：DE69829625D1
公开(公告)日：2005-05-12
申请号：DE69829625
申请日：1998-11-09
申请人： HITACHI LTD , HITACHI ENG CO LTD , HITACHI KYOWA ENGINEERING CO
发明人： IRIE KAZUYOSHI , MORI TOSHIHIRO , YOKOYAMA HISAO , TOMIYAMA TAKAYUKI , TAKANO TOSHIHIDE , TAMATA SHIN , KANNO SHUICHI
IPC分类号： B01D53/86 , B01D53/14 , H01L21/00
摘要： An exhaust gas containing a perfluoride compound (PFC) and SiF4 is conducted into a silicon remover and contacted with water. A reaction water supplied from a water supplying piping and air supplied from an air supplying piping are mixed with the exhaust gas exhausted from the silicon remover. The exhaust gas containing water, air, and CF4 is heated at 700 DEG C by a heater. The exhaust gas containing PFC is conducted to a catalyst layer filled with an alumina group catalyst. The PFC is decomposed to HF and CO2 by the catalyst. The exhaust gas containing HF and CO2 at a high temperature exhausted from the catalyst layer is cooled in a cooling apparatus. Subsequently, the exhaust gas is conducted to an acidic gas removing apparatus to remove HF. In accordance with the present invention, the silicon component is removed from the exhaust gas before introducing the exhaust gas into the catalyst layer. Therefore, surface of the catalyst can be utilized effectively, and the decomposition reaction of the perfluoride compound can be improved.

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