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1. 发明专利

JPH0837238A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JPH0837238A
公开(公告)日：1996-02-06
申请号：JP19101094
申请日：1994-07-21
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： TANBA HIROKO , HASE AKIHIRO , OKAZAKI TAKAO
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8234 , H01L27/02 , H01L27/088
摘要： PURPOSE:To protect the input MOSFET's in an interface unit by placing between a plurality of power supply terminals both of unidirectional elements that are provided with so high a threshold voltage as to be turned off when power is being normally supplied. CONSTITUTION:MOSFET's Q1-Q6 with a diode connected are placed between different power supply terminals VA, VD, VX. These MOSFET's Q1-Q6 are provided with so high a threshold voltage that they will not be turned on in ordinary operating condition. This allows a thick field insulating film to be used for gate insulating films; so-called parasitic MOSFET's are used. Thus, the threshold voltage of the n-type aluminum parasitic MOSFET's Q1-Q6 is used, and potential difference between independent power supplies, which may cause the electrostatic breakdown of interface elements between the independent power supplies, is thereby canceled. This avoids the electrostatic breakdown of interface elements.

2. 发明专利

JPH10242865A D/A CONVERTER AND SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPH10242865A
公开(公告)日：1998-09-11
申请号：JP4520597
申请日：1997-02-28
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： OKAZAKI TAKAO , ABE YOSHITAKA , KITA MASAHITO , HASE AKIHIRO
IPC分类号： H03M1/08 , H03M1/66 , H03M3/04
摘要： PROBLEM TO BE SOLVED: To provide a D/A converter capable of improving the S/N characteristic. SOLUTION: This D/A converter is constituted of switch circuits U1-Un, D1-Dn which selectively extract a positive divided voltage output and a negative divided voltage output from a resistor circuit according to an amplitude selection signal and a differential amplifier 50 that differentially amplifies the positive divided voltage output and the negative divided voltage output extracted by the switch circuits. The positive divided voltage output and the negative divided voltage output around a reference voltage with respect to one of quantization outputs in a plurality of bits are produced from the resistor circuit 41 and they are differentially amplified to generate a specified analog voltage signal, then the S/N of the D/A converter is improved through the reducing action of a common mode noise component by the differential amplification.

3. 发明专利

JPH08316833A TEST METHOD FOR PLL CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT 失效
公开(公告)号：JPH08316833A
公开(公告)日：1996-11-29
申请号：JP12400695
申请日：1995-05-23
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： OKAZAKI TAKAO , HASE AKIHIRO
IPC分类号： G01R31/30 , H03L7/093 , H03L7/10
摘要： PURPOSE: To realize a voltage controlled oscillator circuit with a broad frequency area without deterioration in the PSRR characteristic in the PLL circuit of a system in which an input reference clock signal is switched by changing a control current with a current control circuit to vary a control voltage versus oscillating frequency characteristic of the oscillation circuit. CONSTITUTION: The PLL circuit is made up of a phase comparator circuit PFC, a loop filter LF, a voltage controlled oscillator circuit VCO, a frequency divider circuit CFD 1, and an input basic clock signal switching circuit CST. Through the constitution above, a current flowing to a control voltage generating section of the voltage controlled oscillator circuit VCO whose frequency is controlled according to a control voltage is changed by a signal supplied externally independently of the substantial operation of the PLL circuit to provide an optimum control voltage versus oscillating frequency characteristic corresponding to the selected input basic clock. Thus, the single voltage controlled oscillator VCO copes with plural input basic clocks.

4. 发明专利

JP2009267072A Protection circuit 审中-公开
标题翻译：保护电路
公开(公告)号：JP2009267072A
公开(公告)日：2009-11-12
申请号：JP2008114771
申请日：2008-04-25
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： SHINOMIYA TOSHIO , YOKOYAMA YUJI , HASE AKIHIRO , KITA MASAHITO
IPC分类号： H01L21/822 , H01L27/04 , H01L27/06
CPC分类号： H02H9/046
摘要： PROBLEM TO BE SOLVED: To provide a protection circuit for protecting a semiconductor integrated circuit device from an electrostatic breakdown or a latch-up which may be caused by applying a high voltage between power supplies by external surge or the like when device destruction resistance is reduced due to the microfabrication of a process or voltage reduction.
SOLUTION: A drain terminal of a PMOS transistor MP1 having a source terminal connected to a power supply VDD and having a gate terminal connected to a control signal VG1 generated from the control circuit 2 on the basis of a power supply GND is connected to one end of a resistor R1 having the other end connected to the power supply GND and to a gate terminal of an NMOS transistor MN1 having a drain terminal and a source terminal which are respectively connected to the power supply VDD and the power supply GND, as an internal signal VG2. When an optional voltage and more is applied between the power supplies, the power supply is short-circuited with the other.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于保护半导体集成电路器件免受静电击穿或闩锁的保护电路，这可能是由于当器件破坏时通过外部浪涌等在电源之间施加高电压而引起的由于过程的微细加工或电压降低，电阻降低。解决方案：连接到电源VDD并且具有连接到基于电源GND从控制电路2产生的控制信号VG1的栅极端子的源极端子的PMOS晶体管MP1的漏极端子被连接到另一端连接到电源GND的电阻器R1的一端和具有分别连接到电源VDD和电源GND的漏极端子和源极端子的NMOS晶体管MN1的栅极端子，作为内部信号VG2。当在电源之间施加可选的电压和更多电压时，电源与另一个电源短路。版权所有（C）2010，JPO＆INPIT

5. 发明专利

JP2003045992A Semiconductor integrated circuit device 有权
标题翻译：半导体集成电路设备
公开(公告)号：JP2003045992A
公开(公告)日：2003-02-14
申请号：JP2002164556
申请日：2002-06-05
申请人： Eastern Japan Semiconductor Technologies Inc , Hitachi Ltd , 株式会社日立製作所 , 株式会社東日本セミコンダクタテクノロジ−ズ
发明人： TANBA HIROKO , HASE AKIHIRO , OKAZAKI TAKAO
IPC分类号： H01L27/04 , H01L21/822 , H01L21/8238 , H01L27/092
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device contriving high reliability.
SOLUTION: In the semiconductor integrated circuit supplying operation voltage from a plurality of independent power source supply terminals respectively and having interface transmitting a signal, gate breakage of input MOSFET of an interface part can be prevented by an electrostatic breakage prevention circuit even when high voltage is applied on each power source terminal due to static electricity in handling or the like of the semiconductor integrated circuit device by providing an electrostatic breakage prevention circuit costing of MOSFET connected by resistance and a diode to an interface part for transmitting a signal between electronic circuits.
COPYRIGHT: (C)2003,JPO
摘要翻译：要解决的问题：提供具有高可靠性的半导体集成电路器件。解决方案：在半导体集成电路中，分别从多个独立的电源端子提供工作电压并且具有传输信号的接口，即使高电压是通过静电破坏电路也可以防止接口部分的输入MOSFET的栅极断裂通过提供由电阻连接的MOSFET的成本的静电破坏电路和用于在电子电路之间传输信号的接口部分的二极管，由于在半导体集成电路器件的处理等中的静电而施加在每个电源端子上。

6. 发明专利

JP2002151652A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2002151652A
公开(公告)日：2002-05-24
申请号：JP2000342796
申请日：2000-11-10
申请人： HITACHI LTD , HITACHI ULSI SYS CO LTD
发明人： KITA MASAHITO , HASE AKIHIRO , WATANABE HIROBUMI
IPC分类号： H01L21/822 , H01L27/04 , H01L27/06
摘要： PROBLEM TO BE SOLVED: To improve the performance of an analog/digital consolidated type semiconductor integrated circuit device. SOLUTION: The gate lengths (channel lengths) of complementary MISFETs (n-channel type MISFET and p-channel type MISFET), constituting circuit blocks such as a digital circuit part, an analog circuit part and a signal input/ output part, are set differently corresponding to the characteristics of the respective circuit blocks. Also, the resistive element of a digital signal input protective circuit and the resistive element of an analog signal input protective circuit are constituted of different materials. Further, a digital signal input/output part and an analog signal input/output part are arranged at positions separated farthest from each other on a semiconductor substrate (chip) 1, so that the chip layout will not make the noise of the digital signal input/output part sneak into the analog circuit part.

7. 发明专利

JP2000349617A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE 失效
公开(公告)号：JP2000349617A
公开(公告)日：2000-12-15
申请号：JP15724699
申请日：1999-06-04
申请人： HITACHI LTD
发明人： OKAZAKI TAKAO , HASE AKIHIRO
IPC分类号： H03K19/0185
摘要： PROBLEM TO BE SOLVED: To stably convert a level of an input signal having a low power supply voltage amplitude into a level of a signal with a high power supply voltage amplitude while reducing the power consumption and the area of a level conversion circuit. SOLUTION: When a signal at a low level is given to a level conversion circuit 1, transistors(TRs) 12, 9 are respectively turned on and off, a node (e) reaches a high level and a TR 4 is turned off. Since a node (d) is at a low level, an output of a node (f) goes to a low level. When a signal at a high level (a breakdown voltage VDL) is given to the level conversion circuit 1, the TRs 12, 9 are respectively turned on and off. The node (e) goes to a low level, the TR 4 is turned on, the node (d) approaches a high level and the node (e) goes to a low level. The TR 4 carries more current so that the node (d) becomes at a high level and a high level signal (power supply voltage Vcc) receiving level conversion is outputted to the node (f).

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