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1. 发明专利

JPH11120383A CAD/CAE DEVICE 失效
公开(公告)号：JPH11120383A
公开(公告)日：1999-04-30
申请号：JP28883497
申请日：1997-10-21
申请人： HITACHI LTD , HITACHI INFORMATION TECHNOLOGY
发明人： HATA NAOKO , SAITO NAOTO , NEZU TOSHITADA , SAKAMOTO TATSUJI , TAKAHASHI KOICHI , YANAGIDA NOBUYOSHI , EZAWA YOSHITAKA
IPC分类号： G06F17/50 , G06T17/20
摘要： PROBLEM TO BE SOLVED: To efficiently use conventional information among information regarding a shape of a model. SOLUTION: When the information regarding the shape of an object to be analyzed and an analyzing condition is inputted in an analysis processor 10 from a keyboard 14, a finite element model is generated based on the information inputted in the analysis processor 10. After that, a request to change the shape for the finite element model is inputted from the keyboard 14 and when a point of change regarding the finite element model and its contents are specified, the shape of the finite element model is changed by processings at a shape changing part 20 and a shape processing part 22. Specifically, only the vicinity of a newly changed part in the model is initialized, other parts are left as they are and a processing to newly divide the initialized part into plural finite elements is performed. And a motion of the object to be analyzed is analyzed by an analysis processing part 26 based on the newly generated finite element model and an analyzing result is displayed on a screen of a display part 12 by the processing at an analyzing result display part 28.

2. 发明专利

IN187708B A process for producing a semiconductor device 未知
公开(公告)号：IN187708B
公开(公告)日：2002-06-08
申请号：IN824CA1996
申请日：1996-05-06
申请人： HITACHI LTD
发明人： MIURA HIDEO , IKEDA SHUJI , SUZUKI NORIO , SAITO NAOTO , NISHIMURA ASAO
IPC分类号： H01L21/316 , H01L21/76 , H01L21/762 , C30B29/16
摘要： An element isolation oxide film is formed in a way that an opening for exposing a prescribed area is formed at least in one of thin films formed on a silicon substrate leaving the other part of the thin films unopened, an oxide film corresponding to the prescribed area is formed by selectively oxidizing the silicon substrate through the opening, at least the oxide film is exposed by removing other thin films than the oxide film, the whole exposed surface is additonally oxidized, and the unnecessary part of the oxide film around the prescribed area is removed. The surface of the silicon substrate below the unopened part is substantially flat. Consequently, when transistors are formed, the semiconductor device has an improved degree of integration and an improved reliability.

3. 发明专利

MY132186A SEMICONDUCTOR DEVICE AND PROCESS FOR PRODUCING THE SAME. 未知
公开(公告)号：MY132186A
公开(公告)日：2007-09-28
申请号：MYPI9601700
申请日：1996-05-06
申请人： HITACHI LTD
发明人： MIURA HIDEO , IKEDA SHUJI , SUZUKI NORIO , SAITO NAOTO , NISHIMURA ASAO
IPC分类号： H01L21/316 , H01L21/76 , H01L21/762
摘要： WHEN ELEMENT ISOLATION OXIDE FILMS (2) ARE FORMED BY FORMING AT LEAST ONE THIN FILM ON A SILICON SUBSTRATE (1), FORMING OPENINGS (20) BY EXPOSING PREDETERMINED AREAS AND THE REMAINDER BEING NON-OPENING PORTIONS, FORMING OXIDE FILMS (2) ON PORTIONS CORRESPONDING TO THE PREDETERMINED AREAS BY SELECTIVE OXIDATION OF THE SILICON SUBSTRATE (1) VIA THE OPENINGS (20), REMOVING THIN FILM(S) EXCEPT FOR THE OXIDE FILM (2) TO EXPOSE AT LEAST THE OXIDE FILM AMONG THE OXIDE FILM (2) AND SILICON SUBSTRATE (1), CONDUCTING ADDITIONAL OXIDATION ON THE WHOLE EXPOSED SURFACE, AND REMOVING UNNECESSARY PORTIONS OF OXIDE FROM AROUND THE PREDETERMINED AREAS, THE SILICON SUBSTRATE (1) SURFACE UNDER THE NON-OPENING PORTIONS BECOMES SUBSTANTIALLY FLAT AND IS SUITABLE FOR PRODUCING SEMICONDUCTOR DEVICES IMPROVED IN INTEGRATION AND RELIABILITY.(FIG. 2)

4. 发明专利

JP2002108953A APPARATUS AND METHOD FOR STRUCTURAL ANALYSIS 失效
公开(公告)号：JP2002108953A
公开(公告)日：2002-04-12
申请号：JP2000300547
申请日：2000-09-28
申请人： HITACHI LTD
发明人： SASAKI KOJI , SAITO NAOTO , KITANO MAKOTO
IPC分类号： G06F17/50
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for structural analysis capable of easily performing accurate structural analysis even when the ratio of the sizes of an evaluation portion and the entire structure is great. SOLUTION: An apparatus for structural analysis is provided with a stress analyzer for analyzing stress on the basis of a model in which an analysis target is constituted by combining a plurality of finite elements, and further has a comparative evaluation device for selecting elements having the ratio of two sides greater than a prescribed value out of a plurality of sides constituting the elements and an element degree converting device for providing a nodal point on the intermediate part of a side constituting the selected element.

5. 发明专利

JP2000343143A DEVICE AND METHOD OF MANUFACTURING METALLIC BASE PLATE FOR CIRCUIT 失效
公开(公告)号：JP2000343143A
公开(公告)日：2000-12-12
申请号：JP15112599
申请日：1999-05-31
申请人： HITACHI LTD
发明人： SUZUKI KAZUHIRO , BANDO AKIRA , KAMOSHITA RIKUO , HIRAI TSUTOMU , IWANAKA MITSUFUMI , KOBAYASHI TOSHIYUKI , SAITO NAOTO , SASAKI KOJI
IPC分类号： B21D28/00 , B21D43/00
摘要： PROBLEM TO BE SOLVED: To obtain a circuit pattern base plate of large thickness by pressing an upper stage set being arranged oppositely to a bottom stage set, on which a lead frame is to be mounted, for moving it in the bottom stage direction and by pressure fastening the lead frame so as to cut its unnecessary portion. SOLUTION: A bottom stage 4 is moved from a position directly below the upper stage 2 and a working element is mounted on the bottom stage 4 with an usage of position matching pins 6. The working element is absorbed from a vacuum absorption hole 5 of a bottom cutting blade 3 and is fastened. The bottom stage 4 is moved to a position directly below the upper stage with a rail 11 for pressing and fastening the working element on the bottom cutting blade 3 by lowering the upper stage 2. An upper cutting blade 1 of the upper stage 4 is further lowered for engaging with the bottom cutting blade 3 so that the working element on the bottom cutting blade 3 and the working element on the bottom stage 4 are cut/separated. The bottom stage 4 is pulled out by rising the upper stage 2 so that the necessary circuit pattern alone is left remained on the bottom cutting blade 3.

6. 发明专利

JP2000242761A CARD TYPE ELECTRONIC CIRCUIT BOARD 失效
公开(公告)号：JP2000242761A
公开(公告)日：2000-09-08
申请号：JP4697599
申请日：1999-02-24
申请人： HITACHI LTD
发明人： TOZAKI HIROMI , TAKENAKA TAKATSUGU , SAKAMOTO TATSUJI , SEKIHASHI MASAO , SAITO NAOTO
IPC分类号： G06K19/077 , H05K1/02
摘要： PROBLEM TO BE SOLVED: To obtain a card type electronic circuit board which has high resistance to bending and twist and also has high resistance to mechanical stress applied to a semiconductor IC chip part as a point load. SOLUTION: A semiconductor IC chip 30 connected to a conductor film 20 formed on the surface of a film-shaped circuit board 10 is covered with a protective member 40. The member 40 consists of a rectangular flat plate part (42) arranged oppositely to the upper surface of the chip 30 and a bent part (44) which is provided at least on a side extending in the longitudinal side direction of the board 10 among the four sides of the part (42) and faces the side surface of the semiconductor IC chip. Further, a gap is provided between the part (44) and the film 20.

7. 发明专利

JPH11148875A RESIDUAL STRESS ANALYZING APPARATUS 失效
公开(公告)号：JPH11148875A
公开(公告)日：1999-06-02
申请号：JP31484597
申请日：1997-11-17
申请人： HITACHI LTD
发明人： YANAGIDA NOBUYOSHI , SAITO NAOTO , SASAKI KOJI
IPC分类号： G01L1/00 , G06F17/00 , G06F19/00
摘要： PROBLEM TO BE SOLVED: To estimate a stress distribution in the area other than a measurement point by simulating a residual stress measurement experiment by notching in the finite element method, using a ratio of an actually measured value of the residual stress and an analyzed value as a correction coefficient, and multiplying a residual stress distribution according to the finite element method by the coefficient. SOLUTION: A plurality of nodes of the same coordinate axis are generated on a notched plane, and a finite element is formed in a partial structure. After a boundary condition is designated so that each node behaves in the same manner, an analysis with a load and a compulsory shift applied is carried out, and an internal force distribution when the analysis is completed is stored. The boundary condition of each node is released, and then an analysis is carried out wherein an internal force when the analysis is completed is applied as a load. A residual stress by the finite element method is calculated with the use of a change of a strain at this time at a free strain measurement position as a free elastic strain. A ratio of an actually measured residual stress and the calculated residual stress is obtained as a correction coefficient, and a stress distribution value in the partial structure is multiplied by the correction coefficient and stored in an analysis result data file. Accordingly, not only an average residual stress of the area of interest, but a local residual stress can be obtained.

8. 发明专利

JPH1113693A VERTICAL SHAFT PUMP PROVIDED WITH DOUBLE SPIRAL CASING 失效
公开(公告)号：JPH1113693A
公开(公告)日：1999-01-19
申请号：JP16688497
申请日：1997-06-24
申请人： HITACHI LTD
发明人： HATSUDA TOSHIO , SAITO NAOTO , NAGASAWA SHIGENOBU , YOSHIDA TAKESHI
IPC分类号： F04D13/00 , F04D29/44
摘要： PROBLEM TO BE SOLVED: To reduce the thickness of a bulk head part by vertically arranging a projection part on a steel plate which is brought into contact with a bulk head of a steel made outer and inner side flow passage walls, and arranging a reinforced reinforcement or rib freely to separate, on a surface of the bulk head side made of a steel plate which is brought into contact with the bulk head. SOLUTION: A projection part 1 is vertically arranged on a steel plate of a bulk head part 9a side of a steel made inner and outer side flow passage walls 4, 5, and an overhanging part 1a is arranged on the tip end of the projection part 1, reinforcements 2a, 2b with hooks are welded on a surface of the steel made bulk head side of the bulk head part 9a side, and a reinforcement 42 is installed thereon. In the case where the outer and inner side flow passage walls 4, 5 are independently manufactured, the inner and outer side flow passage walls 4, 5 can be arranged so as to assemble the reinforcements 2a, 2b with each other by means of crane work, a position is held by a stay 3 until concrete is placed on the bulk head part 9a. It is thus possible to eliminate arrangement work, and it is also possible to shorten the width of the bulk head 9a.

9. 发明专利

JPH10208079A METHOD AND DEVICE FOR GENERATING ANALYTICAL MESH 失效
公开(公告)号：JPH10208079A
公开(公告)日：1998-08-07
申请号：JP1039497
申请日：1997-01-23
申请人： HITACHI LTD
发明人： YOKOHARI TAKASHI , NISHIGAKI ICHIRO , EZAWA YOSHITAKA , SAITO NAOTO
IPC分类号： G06F17/50 , G06T17/20
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for generating analytical mesh which unites hexahedron mesh and tetrahedron mesh without making free sides by using a quadrangular pyramid-shaped mesh at a connecting part of hexahedron mesh and tetrahedron mesh and improves accuracy without increasing calculation quantity. SOLUTION: An inputting means 3 inputs data about a shape model, and an analyzing processor 1 generates analyzing mesh in which hexahedron mesh and tetrahedron mesh coexist based on the inputted data. The processor 1 creates a shape model for an analysis object, retrieves a shape model inputting part 11 for designating a generation area of the hexahedron mesh and generating hexahedron mesh and the hexahedron mesh adjacent to a tetrahedron, arranges quadrangular pyramid mesh on the surface and furthermore, has an automatic mesh generating part 12 for generating tetrahedron mesh in an area in contact with the quadrangular pyramid mesh.

10. 发明专利

JPH09155542A WELD JOINT 失效
公开(公告)号：JPH09155542A
公开(公告)日：1997-06-17
申请号：JP31630695
申请日：1995-12-05
申请人： HITACHI LTD
发明人： MOCHIZUKI MASATO , SAITO NAOTO
IPC分类号： B23K31/00 , B23K9/095
摘要： PROBLEM TO BE SOLVED: To reduce welding deformation, in the multi-layer welding of a structural joint, by using such a filler material for the welding inside a joint on the initial layer side as the contraction deformation is smaller than that of a filler material used for the welding layer to be the surface of the joint. SOLUTION: The flange 1 and the web 2 of a Tee joint are welded by two sided welding after the edge preparation of both sides. The initial layer side is welded by using a filler material 3 whose contraction deformation at the time of welding is smaller than that of a filter material for the final layer such as carbon steel for example. After that, an ordinary filler material 4 is used equivalent to the base material until the final layer. The deformation generated on the initial layer side is larger than that on the final layer side; therefore, welding deformation can be reduced by using, for the welding on the initial layer side, the filler material 3 whose contraction deformation at the time of welding is smaller than that of the filler material for the final layer, though the filler material 4 is used equivalent to the base material for the final layer side.

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