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1. 发明专利

JP2001244273A DIODE AND ITS MANUFACTURING METHOD 失效
公开(公告)号：JP2001244273A
公开(公告)日：2001-09-07
申请号：JP2000054140
申请日：2000-02-29
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , MIURA MASATAMI , TAKAHASHI MASAO , KOBAYASHI SATSUKI
IPC分类号： H01L23/29 , H01L21/329 , H01L23/31 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To obtain a diode whose electric characteristic is not degraded when a thermal shock is applied repeatedly many times during its use and to obtain its manufacturing method. SOLUTION: In a bevel-shaped diode, one main face is a (111) plane, and a p+ junction, a p-junction and an n+ junction are exposed on its side face. It is machined in such a way that its diameter as viewed from the above an intermediate p-layer 1 is larger than the diameter of a p+ layer 2 and an n+ layer 3. A bevel angle is formed at 75 deg. or more by an oxide etching operation and an alkali etching operation. A flat end face is formed in such a way that irregularities are not generated on the end face of the p-junction and the n+ junction. As a result, it is possible to provide a diode whose cut off characteristic in the reverse direction is superior.

2. 发明专利

JPH1027917A DIODE 失效
公开(公告)号：JPH1027917A
公开(公告)日：1998-01-27
申请号：JP17895096
申请日：1996-07-09
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , MATSUZAKI MITSUSACHI , SUGANO MINORU , KOBAYASHI SATSUKI , ABE TAKAHIRO
IPC分类号： H01L21/316 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To avoid the increase in leakage current of the decline in withstand voltage due to the life test such as high temperature inverse bias by reducing the leakage current in the clocking state with high inverse direction voltage applied by provident the III group element in a glass film is provided with the III group element diffused region diffused on a semiconductor surface. SOLUTION: The III group element diffused region 4 is formed so as to diffuse the III group element in the periodic table in a glass film in the glass backing time of a glass film 6 on the surface of an n type semiconductor region 1. At this point, if the charge density N is negative, the channel resistance declines, but if the charge density is positive, a leakage surest is generated, therefore it is recommended that, as for the net charge density in consideration of the reliability, the optimum value is to be within the range of -3×10 /cm -2×10 /cm while the impurity total amount per unit area of the III group element diffused region 4 is not to exceed 1×10 /cm . Through these procedures, the leakage current in the block state with high inverse directional voltage impressed can be reduced thereby enabling the increase in the leakage current and decline in withstand voltage to be avoided.

3. 发明专利

JPH09246571A MANUFACTURE OF DIODE 失效
公开(公告)号：JPH09246571A
公开(公告)日：1997-09-19
申请号：JP5578296
申请日：1996-03-13
申请人： HITACHI LTD , HITACHI HARAMACHI SEMI CONDUCT
发明人： MURAKAMI SUSUMU , MATSUZAKI MITSUSACHI , TSUKUDA KIYOSHI , SUGANO MINORU , KOBAYASHI SATSUKI
IPC分类号： H01L21/316 , H01L29/861
摘要： PROBLEM TO BE SOLVED: To obtain a diode which reduces a leakage current in a block state that a reverse high voltage is applied by a method wherein a groove is formed to be a mesa shape by which a p-n junction is exposed in a prescribed region from one main surface, a lead-based glass film is formed in the mesa-shaped groove so as to be annealed in hydrogen or a hydrogen-based gas and the polarity of an electric charge in the glass film is made equivalently positive. SOLUTION: A heavily doped p type semiconductor region 2 is formed on the main surface, on one side, of an N-type semiconductor substrate 1, and a heavily doped n semiconductor region 3 is formed on the main surface on the other side. Then, an etching operation is performed in such a way that a p-n junction is exposed in a prescribed region from the main surface on one side, and a mesa groove is formed. Then, the mesa groove is coated with a pasty lead-based glass by a screen printing method so as to be then fired, a heat treatment is executed in an oxygen atmosphere, and an anode electrode 20 and a cathode electrode 30 are formed, and a diode is manufactured. After that, a low-temperature hydrogen annealing operation is executed, an electric charge density is made positive, and an ohmic conductivity in a low-voltage region is set at 0.1V or lower.

4. 发明专利

JP2007012952A Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：JP2007012952A
公开(公告)日：2007-01-18
申请号：JP2005193295
申请日：2005-07-01
申请人： Hitachi Ltd , 株式会社日立製作所
发明人： MURAKAMI SUSUMU , YOSHINO KATSUNOBU , SUGANO MINORU , KOKUUCHI SHIGERU , KOBAYASHI SATSUKI , TERAJIMA KENJI
IPC分类号： H01L29/861
摘要： PROBLEM TO BE SOLVED: To reduce a leakage current of a semiconductor device which is equipped with a pn junction exposed on the side of a semiconductor substrate and to enhance its wthstand voltage.
SOLUTION: The semiconductor device is equipped with a semiconductor substrate provided with two main surfaces each having a (111) crystal plane and two or more side faces which have six planes equivalent to the planes of plane orientations (1, -2, 1), a second conductivity-type second semiconductor region of high-impurity concentration which is formed extending from one of the main surfaces into the inside of a first conductivity-type first semiconductor region of low-impurity concentration, a first conductivity-type third semiconductor region which is formed extending from the other main surface into the inside of the first semiconductor region, a first electrode ohmically connected to one of the main surface, and a second electrode ohmically connected to the other main surface. A joint between the second semiconductor region and the first semiconductor region is exposed on the side face.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：为了减少配备有暴露在半导体衬底一侧的pn结的半导体器件的漏电流并提高其电压。解决方案：半导体器件配备有具有两个主表面的半导体衬底，每个主表面具有（111）晶面和两个或更多个侧面，其具有与平面取向（1， 1），从杂质浓度低的第一导电型第一半导体区域的一个主表面延伸形成的高杂质浓度的第二导电型第二半导体区域，第一导电型第三半导体区域半导体区域，其从另一个主表面延伸到第一半导体区域的内部;第一电极，其欧姆连接到主表面之一;以及第二电极，其与另一主表面欧姆连接。第二半导体区域和第一半导体区域之间的接合部在侧面露出。版权所有（C）2007，JPO＆INPIT

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